Abstract In this thesis, a Multi-gate PD SOI Device is realized. The inverse narrow channel effect of the device is also studied. In the Multi-gate PD SOI structure, it has three-surface gate on the silicon MESA Island, which can promote the device performance. However, for eliminating the abnormal corner leakage current in the MESA Island, the process of rounded corner is used. In order to overcome the floating body effect, we use the Schottky body contact. According to the 3-D DAVINCI device simulation and the measurement results, the Multi-gate PD SOI device presents the excellent characteristics: low threshold voltage, low subthreshold factor and high breakdown voltage. In addition, comparing the Multi-gate device with that of the conventional one, the excess drain current gain is observed. In order to understand the behavior of INCE in Multi-gate PD SOI Device in depth, we use the concept of overlap depletion region to derive the expressions of threshold voltage shift. Owing to the device has rounded corner, we also study the rounded corner effect in the model formulation. Comparing calculation with that of the experiment one, the calculation shows agreement with the experiments.

<p>A novel MOSFET gas sensor for the investigation has been developed. Its configuration resembles a"normally on"n-type thin-film transistor (TFT) with a gas sensitive metal oxide as a channel. The device used in the experiments only differs from common TFTs in the gate configuration. In order to allow gas reactions with the SnO2-surface, the gate is buried under the semiconducting layer. Without any gate voltage, the device works as a conventional metal oxide gas sensor. Applied gate voltages affect the channel carrier concentration and surface potential of the metal oxide, thus causing a change in sensitivity. The results of the gas measurements are in accordance with the electric adsorption effect, which was postulated by Fedor Wolkenstein 1957, and arises the possibility to operate a semiconductor gas sensor at relatively low temperatures and, thereby, be able to integrate CMOS electronics for processing of measurements at the same chip.</p>

Thèse doctorat : Génie Electrique : Villeurbanne, INSA : 2003. / Titre provenant de l'écran-titre. Bibliogr. à la fin de chaque chapitre.

Thèse doctorat : Génie Electrique : Villeurbanne, INSA : 2003. / Titre provenant de l'écran-titre. Bibliogr. en fin de chaque chapitre.

Thèse de doctorat : Dispositifs de l'Electronique Intégrée : Villeurbanne, INSA : 2001. / Titre provenant de l'écran-titre. Bibliogr. p. 173-193.

Thèse de doctorat : Microélectronique : Strasbourg 1 : 2007. / Titre provenant de l'écran-titre. Notes bibliogr.

Reproduction de : Thèse de doctorat : Microondes et microtechnologies : Lille 1 : 2005. / N° d'ordre (Lille 1) : 3704. Résumé en français et en anglais. Titre provenant de la page de titre du document numérisé. Bibliogr. à la suite de chaque chapitre. Liste des publications.

Thèse de doctorat : Électronique : Lille 1 : 2006. / N° d'ordre (Lille 1) : 3850. Résumé en français et en anglais. Titre provenant de la page de titre du document numérisé. Bibliogr. à la suite de chaque chapitre. Liste des publications et communications.

Reproduction de : Thèse de doctorat : Microondes et Microtechnologies : Lille 1 : 2004. / N° d'ordre (Lille 1) : 3536. Résumé en français et en anglais. Titre provenant de la page de titre du document numérisé. Bibliogr. à la suite des chapitres. Liste des publications.

Due to the continuous power supply reduction, Charge Pumps, also referred to as DC-DC converters, circuits are widely used in integrated circuits (ICs) to generate high voltages for many applications, such as EEP-ROMs, Flash memories for programming and erasing of the floating gate, switched capacitor circuits, operational amplifiers, voltage regulators, LCD drivers, piezoelectricactuators, etc. A charge pump is a kind of DC to DC converter that uses capacitors as energy storage elements to create either a higher or lower voltage power source. The development of the charge pumps is motivated by ever increasing the needs for the small form factor (i.e small size and low weight), high-conversion-efficiency and low costpower management system, which is the best candidate suitable to meet the needs of continuosly shrinking portable electronic devices like MP3 players, cellular phones, PDA's. / text