<p dir="ltr">Quantum sensing and information processing rely increasingly on solid-state spin defects, which offer robust qubit candidates at room temperature. Among these, nitrogen-vacancy (NV) centers in diamond have been extensively studied, but the discovery of spin defects in two-dimensional (2D) van der Waals (vdW) materials, particularly hexagonal boron nitride (hBN), has opened new avenues for compact, scalable quantum devices. The unique 2D structure of hBN enables its integration into nanoscale devices, where spin defects like the negatively charged boron vacancy serve as optically addressable qubits with promising optically detected magnetic resonance (ODMR) properties, making them highly suitable for ambient-condition quantum sensors and information storage.</p><p><br></p><p dir="ltr">The first part of this dissertation investigates the controlled generation, characterization, and functionalization of spin defects in hBN, focusing on boron vacancy defect ensembles. Techniques such as laser writing and ion implantation are used to create these defects, while plasmonic enhancement strategies significantly improve brightness and optical visibility. Pulsed ODMR measurements are used to analyze the spin coherence properties, revealing extended coherence times crucial for high-sensitivity applications.</p><p><br></p><p dir="ltr">In the second part, we explore carbon-related defects within both hBN and boron nitride nanotubes (BNNTs), where single defects exhibit unique hyperfine interactions. By combining experimental studies with density functional theory (DFT) calculations, this work identifies the atomic structures and electronic properties of these carbon-based defects. In BNNTs, carbon-related spin defects are examined for their potential in high-resolution magnetic imaging when used in scanning probe microscopy.</p><p><br></p><p dir="ltr">This research advances our understanding of spin defects in 2D materials, laying essential groundwork for future innovations in quantum information storage, nanoscale magnetic sensing and on-chip quantum technologies.</p>

Formation of hexagonal boron nitride (h-BN) by carbothermic reduction of B2O3 under nitrogen atmosphere at 1500oC was investigated. Reaction products were subjected to powder X-ray diffraction analysis, chemical analysis and were examined by SEM. B4C was found to exist in the reaction products of the experiments in which h-BN formation was not complete. One of the aims of this study was to investigate the role of B4C in the carbothermic production of h-BN. For this purpose, conversion reaction of B4C into h-BN was studied. B4C used in these experiments was produced in the same conditions that h-BN was formed, but under argon atmosphere. It was found that formation of h-BN from B4C&ndash / B2O3 mixtures was slower than activated C&ndash / B2O3 mixtures. It was concluded that B4C is not a necessary intermediate product in the carbothermic production of h-BN. Some additives are known to catalytically affect the h-BN formation. The second aim of this study was to examine the catalytic effect of some alkaline earth metal oxides and carbonates, some transition metal oxides and cupric nitrate. It was found that addition of 10wt% CaCO3 into the B2O3+C mixture was optimum for increasing the rate and yield of h-BN formation and decreasing the B4C amount in the products and that the reaction was complete in 2 hours. CaCO3 was observed to be effective in increasing the rate and grain size of the formed h-BN. Addition of cupric nitrate together with CaCO3 provided a further increase in the size of the h-BN grains.

Orientadores: Abner de Siervo, Richard Landers / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin / Made available in DSpace on 2018-08-25T18:41:09Z (GMT). No. of bitstreams: 1 DeLima_LuisHenrique_D.pdf: 24142455 bytes, checksum: b13ea70fe8434614a9b9ec40d25b3770 (MD5) Previous issue date: 2014 / Resumo: Monocamadas sp2 de grafeno e nitreto de boro hexagonal (h-BN) têm atraído muita atenção devido ao descobrimento de importantes propriedades, por exemplo, alta resistência mecânica, boa condutividade térmica e excelente estabilidade química e térmica. Porém, enquanto o grafeno é um semicondutor de gap nulo com alta mobilidade dos portadores de carga; o h-BN é um isolante com um largo band gap. Além disso, quando estas monocamadas sp2 são obtidas na superfície de uma variedade de substratos, elas podem exibir superestruturas corrugadas com parâmetro de rede no plano da ordem de nanômetros. Estas superestruturas são importantes para o autoordenamento de moléculas, átomos ou aglomerados de átomos e também para a intercalação de partículas e átomos em posições específicas na interface entre a monocamada sp2 e o substrato. Nesta tese, realizou-se um estudo, básico e aplicado, de monocamadas sp2 de grafeno e h-BN obtidas sobre a superfície do SiC(0001) e do Rh(111), respectivamente. Do ponto de vista básico, foi aplicada a técnica de Difração de Fotoelétrons (XPD) para um estudo da estrutura atômica do grafeno obtido por aquecimento na superfície do SiC(0001) e para a camada de interface entre o grafeno e o SiC, denominada buffer layer (BL). Os resultados de XPD mostraram particularidades distintas na estrutura atômica dessas monocamadas, o que explicaria a diferen_ca na estrutura eletrônica entre a BL e o grafeno. Do ponto de vista aplicado, foi mostrada a viabilidade do nanotemplate de grafeno/BL/SiC(0001) para a obtenção de aglomerados de Co e subsequente estudo das suas propriedades magnéticas por Dicroísmo Circular Magnético de Raios X (XMCD). Os aglomerados de Co foram obtidos sobre a camada de grafeno e os resultados evidenciam uma possível interação cluster-cluster de longo alcance, com influência nas propriedades magnéticas das partículas. Foi investigada também a intercalação dos átomos de Co entre o grafeno e a BL, formando uma rede quase periódica de clusters 2D. O grafeno forma uma barreira de proteção contra oxidação, preservando o caráter metálico das partículas. A monocamada de h-BN sobre a superfície do Rh(111) foi utilizada para a implantação de átomos de Rb. Para a implantação, foi construída uma evaporadora de íons de Rb que permite acelera-los numa faixa de energia possível para penetrar a monocamada de h-BN. Imagens de STM mostraram que os átomos de Rb termalizam entre a monocamada de h-BN e a superfície do Rh(111) em posições especificas da superestrutura, formando o que se denominou de nanotent. A formação dos nanotents e dos defeitos de vacância gerados pelo choque dos íons é uma forma de funcionalização do h-BN, sendo estas estruturas possíveis pontos de ancoragem de moléculas, átomos ou clusters de átomos / Abstract: Graphene and hexagonal boron nitride (h-BN) sp2 monolayers have attracted much attention due the discoveries of their important properties, such as high mechanical strength, good thermal conductivity and excellent chemical and thermal stability. However, while graphene is a zero band gap semiconductor with high carrier mobility; h-BN is a wide band gap insulator. Furthermore, when these sp2 monolayers are obtained on the surface of a variety of substrates, they can exhibit corrugated superstructures with a few nanometers in-plane lattice constants. Such superstructures are important for the self-assembly of molecules, atoms or clusters of atoms and also for the intercalation of these structures at specific positions between the sp2 monolayer and the substrate. In this thesis, we performed a study, fundamental and applied, of sp2 monolayers of graphene and h-BN obtained on the surface of SiC(0001) and Rh(111), respectively. From a fundamental point of view, the Photoelectron Di_raction (XPD) technique was applied for the study of the atomic structure of graphene obtained by heating the surface of the SiC(0001) and for the interface layer between the SiC and graphene, named buffer layer (BL). The XPD results showed distinct peculiarities in the atomic structure of these monolayers, which would explain the difference in electronic structure between BL and graphene. From the applied point of view, it has shown the feasibility of graphene/BL/SiC(0001) nanotemplate to obtain Co clusters and subsequent study of their magnetic properties by X-ray Magnetic Circular Dichroism (XMCD). The Co clusters were obtained on the graphene layer and the results suggest a possible clustercluster long-range interaction, that has influence on the magnetic properties of the particles. It was also investigated the intercalation of Co atoms between graphene, forming a quasi-periodic lattice of 2D-clusters. Moreover, graphene acts as a barrier to oxidation, preserving the metallic character of the clusters. The h-BN monolayer on the surface of Rh(111) was used for the implantation of Rb atoms. For the implantation, it was constructed an evaporator that allows the acceleration of Rb ions to an energy that enables the penetration through the h-BN monolayer. STM images show that the Rb atoms thermalize between the h-BN monolayer and the surface of the Rh(111) at specific positions of the superstructure, forming what is called a \\nanotent\". The formation of the nanotents and the vacancy defects generated by the collision of the ions is a form to functionalize the h-BN, with these structures being possible points for the anchoring of molecules, atoms or clusters of atoms / Doutorado / Física / Doutor em Ciências

During neural activity, action potentials travel down axons, generating effective charge current pulses, which are central in neuron-to-neuron communication. Consequently, said current pulses generate associated magnetic fields with amplitudes on the order of picotesla (pT) and femtotesla (fT) and durations of 10’s of ms. Magnetoencephalography (MEG) is a technique used to measure the cortical magnetic fields associated with neural activity. MEG limitations include the inability to detect signals from deeper regions of the brain, the need to house the equipment in special magnetically shielded rooms to cancel out environmental noise, and the use of superconducting magnets, requiring cryogenic temperatures, bringing opportunities for new magnetic sensors to overcome these limitations and to further advance neuroscience. An extraordinary magnetoresistance (EMR) tunable graphene magnetometer could potentially achieve this goal. Its advantages are linear response at room temperature (RT), sensitivity enhancement owing to combination of geometric and Hall effects, microscale size to place the sensor closer to the source or macroscale size for large source area, and noise and sensitivity tailoring. The magnetic sensitivity of EMR sensors is, among others, strongly dependent on the charge mobility of the sensing graphene layer. Mechanisms affecting the carrier mobility in graphene monolayers include interactions between the substrate and graphene, such as electron-phonon scattering, charge impurities, and surface roughness. The present work reviews and proposes a material set for increasing graphene mobility, thus providing a pathway towards pT and fT detection. The successful fabrication of large-size magnetic sensors employing CVD graphene is described, as well as the fabrication of trilayer magnetic sensors employing mechanical exfoliation of h-BN and graphene. The magneto-transport response of CVD graphene Hall bar and EMR magnetic sensors is compared to that obtained in equivalent trilayer devices. The sensor response characteristics are reported, and a determination is provided for key performance parameters such as current and voltage sensitivity and magnetic resolution. These parameters crucially depend on the material's intrinsic properties. The Hall cross magnetic sensor here reported has a magnetic sensitivity of ~ 600 nanotesla (nT). We find that the attained sensitivity of the devices here reported is limited by contaminants on the graphene surface, which negatively impact carrier mobility and carrier density, and by high contact resistance of ~2.7 kΩ µm at the metallic contacts. Reducing the contact resistance to < 150 Ω µm and eliminating surface contamination, as discussed in this work, paves the way towards pT and ultimately fT sensitivity using these novel magnetic sensors. Finite element modeling (FEM) is used to simulate the sensor response, which agrees with experimental data with an error of less than 3%. This enables the prediction and optimization of the magnetic sensor performance as a function of material parameters and fabrication changes. Predictive studies indicate that an EMR magnetic sensor could attain a sensitivity of 1.9 nT/√Hz employing graphene with carrier mobilities of 180,000 cm²/Vs, carrier densities of 1.3×10¹¹ cm^-2 and a device contact resistance of 150 Ω µm. This sensitivity increments to 443 pT/√Hz if the mobility is 245,000 cm²/Vs, carrier density is 1.6×10¹⁰ cm^-2, and a lower contact resistance of 30 Ω µm. Such devices could readily be deployed in wearable devices to detect biomagnetic signals originating from the human heart and skeletal muscles and for developing advanced human-machine interfaces.

The development of metals that can overcome the strength-ductility-weight trade-off has been an ongoing challenge in engineering for many decades. A promising option for making such materials are Metal matrix composites (MMCs). MMCs contain dispersions of reinforcement in the form of fibers, particles, or platelets that significantly improve their thermal, electrical, or mechanical performance. This dissertation focuses on reinforcement with two-dimensional (2D) materials due to their unprecedented mechanical properties. For instance, compared to steel, the most well-studied 2D material, graphene, is nearly forty times stronger (130 GPa) and five times stiffer (1 TPa). Examples of reinforcement by graphene have achieved increases in strength of 60% due to load transfer at the metal/graphene interface and dislocation blocking by the graphene. However, the superior mechanical properties of graphene are not fully transferred to the matrix in conventional MMCs, a phenomenon known as the "valley of death." In an effort to develop key insight into how the relationships between composite design, processing, structure, properties, and mechanics can be used to more effectively transfer the intrinsic mechanical properties of reinforcements to bulk composite materials, nanolayered composite systems made of Ni, Cu, and NiTi reinforced with graphene or 2D hexagonal boron nitride h-BN is studied using experimental techniques and molecular dynamics (MD) simulations. / Doctor of Philosophy / The design of new metals with concurrently improved strength and ductility has been an enduring goal in engineering for many decades. The utilization of components made with these new materials would reduce the weight of structures without sacrificing their performance. Such materials have the potential to revolutionize many industries, from electronics to aerospace. Traditional methods of improving the properties of metals by thermomechanical processing have approached a point where only minor performance improvements can be achieved. The development of Metal matrix composites (MMCs) is among the best approaches to achieving the strength-ductility goal. Metal matrix composites are a class of materials containing reinforcements of dissimilar materials that significantly improve their thermal conductivity, electrical conductivity, or mechanical performance. Reinforcements are typically in the form of dispersed fibers, particles, or platelets. The ideal reinforcement materials have superior mechanical properties compared to the metal matrix, a high surface area, and a strong interfacial bond with the matrix. Two-dimensional (2D) materials (materials made up of a single to a few layers of ordered atoms) are attractive for reinforcement in composite materials because they possess unprecedented intrinsic properties. The most well-studied 2D material, graphene, is made of a single layer of carbon atoms arranged in a hexagonal honeycomb pattern. It is nearly forty times stronger (130 GPa) and five times stiffer (1 TPa) than steel. Examples of graphene reinforcing have shown increases in strength of 60% due to load transfer at the metal/graphene interface and dislocation blocking by the graphene. Despite their exceptional mechanical properties, the superior mechanical properties of graphene are not fully transferred to the matrix when incorporated into conventional metal matrix composites. This phenomenon, known as the "valley of death," refers to the loss of mechanical performance at different length scales. One cause of this phenomenon is the difficulty of evenly dispersing the reinforcements in the matrix using traditional fabrication techniques. Another is the presence of dislocations in the metal matrix, which cause very large local lattice strains in the graphene. This atomistic-scale deformation at the interface between the metal and the graphene can significantly weaken it, leading to failure at low strains before reaching its intrinsic failure stress and strain. This dissertation aims to provide insight into how the relationships between composites' design, processing, structure, properties, and mechanics can be used to transfer intrinsic mechanical properties of reinforcements to bulk composite materials more effectively. For this, nanolayered composite systems of Ni and Cu reinforced with graphene or 2D h-BN were studied using experimental techniques and molecular dynamics (MD) simulations to elucidate the underlying mechanisms behind the composites' material structure and mechanical behavior. Additionally, we explore the incorporation of graphene in a metallic matrix that does not deform through dislocations (or shear bands), such as the shape memory alloy nickel-titanium ( Nitinol or NiTi), to avoid low strain failure of the metal/graphene interface. This theoretical strengthening mechanism is investigated by designing and fabricating NiTi/graphene composites.

[pt] O Nitreto de Boro Hexagonal (h-BN) é um material composto por átomosalternados de Boro (B) e Nitrogênio (N) com um aspecto hexagonal. Os filmesfinos de h-BN desempenham um papel crucial no desenvolvimento de aplicações como em dispositivos 2D baseados em heteroestruturas de Van der Waals,revestimentos protetivos, tribológicos, entre outros. A síntese de h-BN aindarepresenta um desafio significativo. Nesta tese, investigou-se a síntese do h-BNutilizando o método de low pressure chemical vapour deposition (LPCVD),empregando amônia borane (AB) como fonte precursora de B e N. O estudofocou-se no crescimento direto sobre o substrato de silício <100>, eliminando,assim, a necessidade de transferência do filme para posterior caracterizaçãoe evitando a degradação e contaminações associadas ao processo de transferência. A primeira parte deste estudo concentrou-se no crescimento por CVD,controlando os parâmetros de quantidade de material precursor, temperaturade evaporação do precursor e do forno, fluxo de gases nas etapas de reduçãoe de síntese, temperatura, tempo de redução, síntese e resfriamento. Foramsintetizadas duas séries: uma em função da temperatura de crescimento entre1173 e 1373 K, e uma segunda em função do tempo de síntese a uma temperatura de 1373 K. Os filmes foram caracterizados por espectroscopias Raman,infravermelho por transformada de Fourier (FTIR), UV-visível (UV-Vis), de fotoelétrons excitados por raios X (XPS), microscopia de força atômica (AFM),ângulo de contato, microscopia eletrônica de varredura (SEM), microscopiaeletrônica de varredura por transmissão (STEM) e tribologia. Inicialmente,foi estudado o efeito da temperatura de crescimento na qualidade dos filmescrescidos por 10 minutos. Os resultados de espectroscopia Raman confirmamo crescimento de h-BN, evidenciado pelo pico E2g em aproximadamente 1375cm−1. Estudos morfológicos mostraram que variações de temperatura levam àformação de diferentes estruturas na superfície do Si. O crescimento é observado a partir de 1273 K, enquanto amostras crescidas abaixo de 1223 K nãoapresentam sinais de crescimento. Observamos a formação de folhas bidimensionais (2D) com dimensões laterais variando de 80 a 500 nm, assim como ocrescimento contínuo de filmes com nanocristais de tamanhos variados. A razão B:N determinada por XPS foi de aproximadamente 1:1 e o gap óptico dosfilmes de h-BN foi determinado em 5,75 eV. O estudo de tribologia demonstrouum coeficiente de atrito de 0,1 e não houve delaminação após 3000 ciclos deida e volta lineares no teste esfera no disco percorrendo 10 mm em cada ciclono filme, enquanto o do Si foi de 0,6. Para os filmes sintetizados em função dotempo, a caracterização por espectroscopia Raman revelou um pico de modode vibração E2g em 1374 cm−1com intensidade correlacionada à espessura dofilme. A espectroscopia FTIR confirmou a presença de ligações B-N, e a bandaóptica foi determinada em 5,65 eV. O ângulo de contato mostrou filmes hidrofóbicos. Os dados de XPS indicaram uma relação estequiométrica 1:1 entre Be N, e a espessura foi analisada pela medida de seção transversal por STEM,sendo da ordem de 20 nm para filmes crescidos por 10 minutos a 1373 K. / [en] Hexagonal Boron Nitride (h-BN) is a material composed of alternating Boron (B) and Nitrogen (N) atoms with a hexagonal aspect. Thin films of h-BN play a crucial role in the development of applications such as 2D devices based on Van der Waals heterostructures, protective coatings, tribological applications, among others. The synthesis of h-BN still represents a significant challenge. In this thesis, the synthesis of h-BN was investigated using the low-pressure chemical vapor deposition (LPCVD) method, employing ammonia borane (AB) as a precursor source of B and N. The study focused on direct growth on the silicon <100> substrate, thus eliminating the need for film transfer for subsequent characterization and avoiding degradation and contamination associated with the transfer process. The first part of this study focused on CVD growth, controlling parameters such as the amount of precursor material, precursor and furnace evaporation temperature, gas flow rates during the reduction and synthesis stages, temperature, reduction time, synthesis, and cooling. Two series were synthesized: one as a function of growth temperature between 1173 and 1373 K, and a second as a function of synthesis time at a temperature of 1373 K. The films were characterized by spectroscopy, Raman, Fourier-transform infrared (FTIR), UV-visible (UV-Vis), X-ray photoelectron (XPS), atomic force microscopy (AFM), contact angle measurements, scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and tribology. Initially, the effect of growth temperature on the quality of films grown for 10 minutes was studied. Raman spectroscopy results confirmed the growth of h-BN, evidenced by the E2g peak at approximately 1375 cm−1 . Morphological studies showed that temperature variations lead to the formation of different structures on the Si surface. Growth is observed from 1273 K, while samples grown below 1223 K show no signs of growth. We observed the formation of two-dimensional (2D) nanosheets with lateral dimensions ranging from 80 to 500 nm, as well as the continuous growth of films with nanocrystals of varying sizes. The B:N ratio determined by XPS was approximately 1:1, and the optical gap of the h-BN films was determined to be 5.75 eV. Tribology studies demonstrated a friction coefficient of 0.1, and there was no delamination after 3000 linear reciprocating cycles in the ball-on-disk test, covering 10 mm in each cycle on the film, while for Si it was 0.6. For films synthesized as a function of time, Raman spectroscopy characterization revealed an E2g vibration mode peak at 1374 cm−1 with intensity correlated to the film thickness. FTIR spectroscopy confirmed the presence of B-N bonds, and the optical band was determined to be 5.65 eV. Contact angle measurements showed hydrophobic films. XPS data indicated a stoichiometric 1:1 ratio between B and N, and the thickness was analyzed by cross-sectional STEM measurements, being around 20 nm for films grown for 10 minutes at 1373 K.

This thesis explores the application of two-dimensional (2D) materials such as graphene and single layer hexagonal boron nitride (h-BN) which are produced by liquid phase exfoliation for use in printed electronics and energy composite applications. In Chapter 2 I give a broad overview of the electrical, mechanical and optical properties of 2D materials among other nanomaterials that were used in the thesis such as carbon nanotubes and conductive polymers. Additionally I review the techniques and theory behind the exfoliation and dispersion of functional layered materials. In Chapter 3 I present the coating and printing techniques which were used in this thesis along with the experimental techniques and methods which I use to characterise my inks, films and devices. Chapter 4 is the first experimental chapter of the thesis and demonstrates the printing of 2D material heterostructures to create fully printed dieletrically gated field effect transistors with 2D materials on textile and polymer substrates. In this chapter I also demonstrate reprogrammable volatile memory, p and n type inverters, complementary inverters, and logic gates which pave the way to fully printed integrated circuits, operational at room temperature and pressure with 2D materials processed in liquid. In Chapter 5, I review spray coating (a highly industrial scalable printing technique), in terms of the optimisation of its parameters to achieve thin films of nanomaterials on three-dimensional (3D) surfaces. I then demonstrate that it is possible to create large area (∼750 cm2) transparent conducting films around curved surfaces with spray coating enabling a semi-transparent (around 360°) spherical touch sensor for interactive devices. Chapter 6 explores printed photonics for applications in terahertz (THz) frequencies. Here I demonstrate the feasibility of liquid phase exfoliated graphene to create THz saturable absorbers (SAs) which could enable many applications in THz frequencies such as tomography or time-resolved spectroscopy that require mode-locked (i.e. enabling a train of short pulses to be derived from continuous-wave operation) THz pulses. I also demonstrate that these SAs can be inkjet printed on demand providing unprecedented compactness in a quantum cascade laser system. Finally in Chapter 7, I look at the application of graphene in microbial fuel cells (MFC). I demonstrate that enhanced MFC output arises from the interplay of the improved surface area, enhanced conductivity, and catalytic surface groups of a graphene based electrode. As a final step graphene based anodes and cathodes which were entirely platinum free were combined to create an environmentally sustainable energy source.

Boron nitride (BN) materials have unique properties, which has led to interest in them in the last few years. The deformation of boron nitride materials including hexagonal boron nitride, boron nitride nanosheets (BNNSs) and boron nitride nanotubes have been studied by Raman spectroscopy. Both mechanical and liquid exfoliations were employed to obtain boron nitride nanostructures. Boron nitride glass composites were synthesised and prepared in thin films to be deformed by bending test in-situ Raman spectroscopy. Hexagonal boron nitride in the form of an individual flake and as flakes dispersed in glass matrices has been deformed and Raman measurement shows its response to strain. The shift rates were, -4.2 cm-1/%, -6.5 cm-1/% for exfoliated h-BN flake with thick and thin regions and -7.0 cm-1/%, -2.8 cm-1/% for the h-BN flakes in the h-BN/ glass (I) and glass (II) composites. Boron nitride nanosheets (BNNSs) shows a G band Raman peak at 1367.5 cm-1, and the deformation process of BNNSs/ glass composites gives a shift rate of -7.65 cm-1/% for G band. Boron nitride nanotubes (BNNTs) have a Raman peak with position at 1368 cm-1, and their deformation individually and in composites gives Raman band shift rates of -25.7 cm-1/% and -23.6 cm-1/%. Glass matrices shows compressive stresses on boron nitride fillers and this was found as an upshift in the frequencies of G band peak of boron nitride materials. Grüneisen parameters of boron nitride (BN) were used to calculate the residual strains in glass matrices of BNNSs nanocomposites as well as to estimate the band shift rates which found to be in agreement with the experimental shift rate of bulk BN and BNNTs.

This thesis, submitted to the University of Manchester, covers a range of topics related to current research in two-dimensional materials under the title: 'Investigations into the interfacial interaction of graphene with hexagonal boron nitride.'In the last decade, two-dimensional materials have become a rich source of original research and potential applications. The main advantage lies in the ability to produce novel composite structures, so-called 'layered heterostructures', which are only a few atomic layers thick. One can utilise the unique properties of several species of crystal separately, or how they interact to realise a diverse range of uses. Two such crystals are graphene and hexagonal boron nitride. Hexagonal boron nitride has, so far, been used primarily as a substrate for graphene, allowing researchers to get the most out of graphene's impressive individual properties. However, in this thesis, the non-trivial van der Waals interaction between graphene and hexagonal boron nitride is examined. The interface potential reveals itself as a relatively large-scale, orientation-dependant superlattice, which is described in chapters 1 and 2.I In Chapter 4, the effect of this superlattice is examined by measurement of its effect upon the electrons in graphene, where its modulation leads to the creation of second and third generation Dirac points, revealing Hofstadter's Butterfly. As well as an excellent example of the physics possible with graphene, it also presents a new tool with which to create novel devices possessing tailored electronic properties. II In chapter 5, the consequential effect of the superlattice potential on the structure of graphene is studied. Results are discussed within the framework of the Frenkel-Kontorova model for a chain of atoms on a static background potential. Results are consistent with relaxation of the graphene structure leading to the formation of a commensurate ground state. This has exciting consequences for the production of heterostructures by demonstrating that alignment angle can have large effects upon the physical properties of the crystals. III In chapter 6, the van der Waals potential is shown to be responsible for the self-alignment of the two crystals. This effect is important for the fabrication of perfectly aligned devices and may lead to new applications based on nanoscale motion.

Comme le quatrième élément le plus abondant dans l’univers, le carbone joue un rôle important dans l’émergence de la vie sur la terre comme nous la connaissons aujourd’hui. L’ère industrielle a vu cet élément au cœur des applications technologiques en raison des différentes façons dont les atomes forment les liaisons chimiques, ce qui donne lieu à une série d’allotropies chacun ayant des propriétés physiques extraordinaires. Par exemple, l’allotrope le plus thermodynamiquement stable du carbone, le cristal de graphite, est connu pour être un très bon conducteur électrique, tandis que le diamant, très apprécié pour sa dureté et sa conductivité thermique, est néanmoins considéré comme un isolant électrique en raison de sa structure cristallographique différente par rapport au graphite. Les progrès de la recherche scientifique ont montré que les considérations cristallographiques ne sont pas le seul facteur déterminant pour une telle variété dans les propriétés physiques des structures à base de carbone. Ces dernières années ont vu l’émergence de nouvelles formes allotropiques de structures de carbone qui sont stables dans les conditions ambiantes, mais avec dimensionnalité réduite, ce qui entraîne des propriétés largement différentes par rapport aux structures en trois dimensions. Parmi ces nouvelles classes d’allotropes il y a le graphene, qui est le premier matériau à deux dimensions. L’isolation réussi de monocouches de graphène a contesté une croyance établie depuis longtemps en physique : le fait que les matériaux purement 2D ne peuvent pas exister dans les conditions ambiantes parce qu'ils sont instables en raison de l’augmentation des fluctuations thermiques lorsqu’ils se prolongent dans les 2D. Afin de minimiser son énergie, un matériau se brisera en îlots coagulées. Le graphène arrive cependant à surmonter cette barrière en formant des ondulations continues sur la surface du substrat et est stable même à température ambiante et pression atmosphérique. Une grande intention dans la communauté scientifique a été donnée au graphène, après les premiers résultats publiés sur les propriétés électroniques de ce matériau. Les propriétés fondamentales et mécaniques du graphène sont fascinants. Grace aux atomes de carbone qui sont emballés dans un mode sp2 hybridé, formant ainsi une structure de réseau hexagonal, le graphène possède le plus grand module de Young et la plus grande capacité d’étirement, en même temps des centaines de fois plus dur que l’acier. Il conduit la chaleur et l’électricité de manière très efficace. L’aspect le plus fascinant à propos du graphène est surement la nature de ses porteurs de charge à basse énergie. En effet, le graphène présente des bandes d’énergie linéaires au point de neutralité de charge, donnant aux porteurs de charge une nature relativiste. De nombreux phénomènes observés dans ce matériau sont des conséquences de la nature relativiste de ses porteurs. Transport balistique, conductivité optique universelle, absence de rétrodiffusion, et une nouvelle classe d’effet Hall quantique sont de bons exemples de phénomènes nouvellement découverts dans ce matériau. Il est cependant encore trop tôt pour affirmer que toutes les propriétés physiques du graphene sont bien comprises. Dans cette thèse, nous avons mené des expériences de spectroscopie magnéto-Raman pour répondre à certaines des questions ouvertes dans la physique du graphène, notamment l’effet de couplage de Coulomb sur le spectre d’énergie du graphène, et le changement dans les propriétés physiques du graphène multicouche en fonction de sa cristallographie. Nos echantillions ont été soumis à de forts champs magnétiques, appliqués perpendiculairement aux plans atomiques. Le spectre d’excitation sous champ magnétique montre un couplage entre ces excitations et les modes de vibratoires. Cette approche expérimentale permet de remonter à la structure de bande du graphene en champs nul, ainsi que de nombreuses autres propriétés du matériau. / As the fourth most abundant element in the universe, Carbon plays an important rolein the emerging of life in earth as we know it today. The industrial era has seen this element at the heart of technological applications due to the different ways in which carbon forms chemical bonds, giving rise to a series of allotropes each with extraordinary physical properties. For instance, the most thermodynamically stable allotrope of carbon, graphite crystal, is known to be a very good electrical conductor, while diamond very appreciated for its hardness and thermal conductivity is nevertheless considered as an electrical insulator due to different crystallographic structure compared to graphite. The advances in scientific research have shown that crystallographic considerations are not the only determining factor for such a variety in the physical properties of carbon based structures. Recent years have seen the emergence of new allotropes of carbon structures that are stable at ambient conditions but with reduced dimensionality, resulting in largely different properties compared to the three dimensional structures. Among these new classes of carbon allotropes is the first two-dimensional material: graphene.The successful isolation of monolayers of graphene challenged a long established belief in the scientific community: the fact that purely 2D materials cannot exist at ambient conditions. The Landau-Peierls instability theorem states that purely 2D materials are very unstable due to increasing thermal fluctuations when the material in question extends in both dimensions. To minimize its energy, the material will break into coagulated islands, an effect known as island growth. Graphene happens to overcome such barrier by forming continuous ripples on the surface of its substrate and thus is stable even at room temperature and atmospheric pressure.A great intention from the scientific community has been given to graphene, since 2004. Both fundamental and mechanical properties of graphene are fascinating. Thanks to its carbon atoms that are packed in a sp2 hybridized fashion, thus forming a hexagonal lattice structure, graphene has the largest young modulus and stretching power, yet it is hundreds of times stronger than steel. It conducts heat and electricity very efficiently, achieving an electron mobility as high as 107 cm−2V−1 s−1 when suspended over the substrate. The most fascinating aspect about graphene is the nature of its low energy charge carriers. Indeed, graphene has a linear energy dispersion at the charge neutrality, giving the charge carriers in graphene a relativistic nature. Many phenomena observed in this material are consequences of this relativistic nature of its carriers. Ballistic transport, universal optical conductivity, absence of back-scattering, and a new class of room temperaturequantum Hall effect are good examples of newly discovered phenomena in thismaterial. Graphene has become an active research area in condensed matter physics since 2004. It is however still early to state that all the physical properties of this material are well understood. In this thesis we conducted magneto-Raman spectroscopy experiments to address some of the open questions in the physics of graphene, such as the effect of electron-electron coupling on the energy spectrum of monolayer graphene, and the change in the physical properties of multilayer graphene as a function of the crystallographic stacking order. In all our experiments, the graphene-based systems have been subject to strong continuous magnetic fields, applied normal to the graphene layers. We study the evolution of its energy excitation spectra in the presence of the magnetic field, and also the coupling between these excitations and specific vibrational modes that are already in the system. This experimental approach allows us to deduce the band structure of the studied system at zero field, as well as many other lowenergy properties.