<p>Plasmonics with the capability to harness electromagnetic waves at a nanoscale can be utilized for multitude of applications in ultra-compact miniature optical devices. Plasmonic metasurfaces which are artificially designed sub-wavelength structures have gained unprecedented interest in being able to engineer and effectively modulate the amplitude and phase of the incident wave. Introducing randomness to such plasmonic metasurfaces can also advance possibilities for extraordinary wave manipulation. Hence, by exploiting the plasmonic response of the ordered and disordered metasurfaces, we can design high performance devices for nanoscale optics.</p> <p>Aiming to provide a holistic solution to the current device limitations and bio-compatibility, my research focuses on non-toxic and environment-friendly coloration using plasmonic disordered metasurfaces. These structures generate a broad range of long-lasting colors in reflection that can be applied to real-life artistic or technological applications with a spatial resolution on the order of 0.3 mm or less. Moreover, my research also deals with the possibility of even concentrating energy in the smallest phase-space volume in optics in the form of coherent radiation through designing nanolasers. The study of carrier dynamics and photophysics of the gain media can be extremely beneficial towards the practicability of these lasers. This work elucidates the evolution of different competing mechanisms for coherent lasing. The dynamic study and experimental demonstration of these devices and respective materials can therefore provide a novel aspect to fundamental and applied research.</p>

<p>This dissertation presents research work related to laser micro sintering, laser micro machining and laser-induced plasma. Firstly, we present extensive experimental studies of double-pulse laser micro sintering (DP-LMS), which typically utilizes the high pressure generated by laser-induced plasma over the powder bed surface to promote molten flow and enhance densification. Chapter 2 shows a single-track experimental study of the DP-LMS process using cobalt powder. The related fundamental mechanisms and effects of different laser parameters on the sintering results are analyzed with the help of <em>in-situ</em> time-resolved temperature measurements. Chapter 3 shows a multi-track experimental study of the DP-LMS process using iron powder. The sintered materials are characterized via the top surface porosity, elemental composition, grain microstructure, nanohardness and metal phase. Three strategic guidelines for laser parameter selection are summarized in the end. Chapter 4 shows time-resolved imaging and OES measurements for plasma induced during DP-LMS. The plasma temperature and free electron number density are deduced by its optical emission spectra (OES). These three chapters have clearly demonstrated DP-LMS can produce much more continuous and densified materials than LMS only using the sintering or pressing laser pulses.</p> <p><br></p> <p>Then, we present laser micro grooving of silicon carbide (SiC) in Chapter 5 by ultrasound-assisted water-confined laser micromachining (UWLM), in comparison with laser machining in water without ultrasound and laser machining in air. UWLM applies <em>in-situ</em> ultrasound to the water-immersed workpiece surface to improve the machining quality and/or productivity. Time-resolved water pressure measurements are carried out to help analyze relevant mechanisms. It has been demonstrated UWLM can be a competitive approach to produce high-quality micro grooves on SiC. The crack problem appears to be effectively solved using a high pulse repetition rate.</p> <p><br></p> <p>Finally, we report a double-front phenomenon for plasma induced by high-intensity nanosecond laser ablation of aluminum in Chapter 6. An additional plasma front is observed via an intensified CCD (ICCD) camera, which propagates very fast at the beginning but stops propagating soon after the laser pulse mostly ends. Its formation could be caused by the inverse bremsstrahlung absorption of laser energy by the ionized ambient gas. Three possible mechanisms on how the ambient gas breakdown is initiated are proposed. </p>

No description available.

Ce travail présente une étude originale de l'interaction laser-matière en régime nanoseconde à l'aide d'une double approche expériences-modélisation numérique. L'approche expérimentale vise à caractériser les plasmas produits par laser et l'empreinte laissée par le faisceau laser sur la cible. L'approche numérique s'appuie sur un modèle 1D qui permet de décrire le chauffage de la cible par le laser, l'ablation de matière et la formation d'un plasma dans cette matière ablatée dûe à l'interaction avec le laser. Des comparaisons des résultats obtenus par les deux approches permettent d'évaluer le degré de précision des résultats issus du modèle. Ces comparaisons se limitent aux 100 premières nanosecondes d'expansion du plasma. Nous montrons ainsi que le modèle décrit assez bien l'écrantage du faisceau laser par le plasma, l'expansion du plasma et la propagation de l'onde de choc dans le gaz ambiant. De plus, les valeurs des seuils d'ablation et de formation du plasma sont calculées avec une bonne précision. En revanche, des écarts sont constatés pour la modélisation des processus d'interaction entre le laser et la cible. Le degré de précision du modèle est au final suffisamment bon pour nous permettre d'étudier précisément l'effet du gaz ambiant sur les propriétés et la dynamique du plasma. / This work provides an original study about laser-matter interaction in the nanosecond regime, based on a coupling between the experiments and the modelling. The experimental study provides a description of the dynamics of the laser produced plasmas. The modelling, based on a 1D numerical scheme, is aimed to describe the heating of the target by the laser pulse, the process of matter ablation and the formation of a plasma in this ablated material due to the interaction with the laser. The comparisons between both experimental and numerical results give the order of accuracy of the results obtained by modelling. These comparisons are limited to the first hundred nanoseconds of plasma expansion. We show that the plasma shielding, the plasma expansion and the propagation of the shockwave are well modelled. Furthermore, the values of both ablation and plasma formation threshold are accurately computed. However, many differences are observed in the results concerning the laser-target interaction process. Finally, the degree of accuracy of the model is sufficiently high to study precisely the background gas effet on both plasma dynamics and properties.

In dieser Arbeit wurde eine neue Markierungsstrategie von Antikörpern mit dem Markierungsreagenz MeCAT (Metal Coded Tag) unter physiologischen Reaktionsbedingungen, sowie deren Anwendung in einem 8-fach Multiplex-Immunoassay von in Formalin-fixierten und in Paraffin-eingebetteten Gewebeschnitten entwickelt. Für eine aussagekräftige LA-ICP-MS Detektion von MeCAT-modifizierten Antikörpern, wurde eine Standardisierung für biologische Proben auf NC-Membranen, basierend auf einer homogenen Aufbringung eines internen Standards und Kalibrierstandards durch einen kommerziell verfügbaren Tintenstrahldrucker entwickelt und mit der ICP-MS Analyse von Lösungen evaluiert. Die LA-ICP-MS wurde in zwei 8-fach Multiplex-Immunoassays von Tissue Micro Arrays vom Prostatakarzinom und in Maushirngewebeschnitten zur Einschätzung von neurogenerative Erkrankungen erfolgreich eingesetzt werden. Es konnte hierbei gezeigt werden, dass das Nachweisvermögen, der hier entwickelten Methode bereits ausreicht, um die gängigen klinischen Biomarker mit guter Ortsauflösung nachzuweisen. / In this work a new tagging strategy of antibodies with the tagging reagent MeCAT (Metal Coded Tag) was developed under physiological reaction conditions. Their application was proved in an 8-fold multiplex immunoassay of formalin-fixed and paraffin-embedded tissue sections. For a significant LA-ICP-MS detection of MeCAT tagged antibodies standardization for biological samples owere developed. The standardization based on a homogeneous deposition onto the NC membrane via conventional CD-ink-jet printer was validated in addition with the ICP-MS analysis of solutions. The internal standardization of LA-ICP-MS was successfully applied in two 8-fold multiplex immunoassays for Tissue Micro Arrays (TMA) of prostate cancer and for detection of biomarkers for neurodegenerative diseases in mouse brain tissue sections. In both examples it could be shown that the detection capability of the new tagging strategy in combination with the printing standardization allows the detection of the clinical biomarker with good spatial resolutions.

Le nettoyage des surfaces métalliques est nécessaire dans différents domaines de l'industrie moderne. L'industrie nucléaire cherche de nouvelles méthodes de décontamination des surfaces oxydées, et les installations thermonucléaires nécessitent le nettoyage des composants face au plasma pour enlever la couche déposée contenant tritium. L'ablation laser est proposée comme une méthode efficace et sûre pour le nettoyage des surfaces métalliques et leur décontamination. Le facteur important influençant le chauffage et l'ablation laser est la distribution en profondeur de l’intensité laser. Le modèle de propagation de la lumière dans une couche diffusant sur un substrat métallique est développé et appliqué pour analyser les caractéristiques de distribution de lumière. Pour simuler les surfaces contaminées, l'inox AISI 304L a été oxydé par laser et chauffé dans un four. La contamination radioactive de la couche d'oxyde a été simulée par l'introduction d’europium et / ou de sodium. Un facteur de décontamination de plus de 300 a été démontré avec le régime de nettoyage optimal trouvé. Une diminution de la résistance à la corrosion a aussi été montrée après un nettoyage laser. Les seuils d'ablation des surfaces ITER-like (représentatives d’ITER) ont été mesurés. Une vitesse de nettoyage de 0,07 m2/W∙h a été trouvée. Pour les surfaces miroir, les seuils de dommages étaient déterminés pour éviter les dommages lors du nettoyage au laser. La possibilité de restaurer la réflectivité après le dépôt d’une couche mince de carbone a été démontrée. Les perspectives de développement ultérieur de nettoyage laser sont discutées. / Metal surface cleaning is highly required in different fields of modern industry. Nuclear industry seeks for new methods for oxidized surface decontamination, and thermonuclear installations require the cleaning of plasma facing components from tritium-containing deposited layer. The laser ablation is proposed as an effective and safe method for metal surface cleaning and decontamination. The important factor influencing the laser heating and ablation is the in-depth distribution of laser radiation. The model of light propagation in a scattering layer on a metal substrate is developed and applied to analyse the features of light distribution. To simulate the contaminated surfaces, the stainless steel AISI 304L was oxidized by laser and in a furnace. Radioactive contamination of the oxide layer was simulated by introducing europium and/or sodium. The decontamination factor of more than 300 was demonstrated with found optimal cleaning regime. The decreasing of the corrosion resistance was found after laser cleaning. The ablation thresholds of ITER-like surfaces were measured. The cleaning productivity of 0.07 m2/hour∙W was found. For mirror surfaces, the damage thresholds were determined to avoid damage during laser cleaning. The possibility to restore reflectivity after thin carbon layer deposition was demonstrated. The perspectives of further development of laser cleaning are discussed.

Les orogènes collisionnels sont classiquement décrits comme le résultat de l'accrétion continentale de marges proximales. Cette accrétion conduit à la surrection des reliefs et à l'export important de produits d'érosion dans les bassins d'avant-pays qui les jalonnent. Dans ce schéma géodynamique sont alors uniquement considérés les domaines pré-orogéniques les moins déformés. Pourtant, un nombre croissant d'évidences géologiques de terrain indiquent la conservation voire la réutilisation de structures héritées de la phase extensive précédant la convergence et la collision au coeur des orogènes. À partir de l'étude géo-thermochronométrique de la bordure orientale du domaine hyper-étiré nord-pyrénéen (massif de l'Agly, Zone Nord Pyrénéenne) et de son avant-pays précoce (synclinal de Rennes-les-Bains, Bassin Aquitain), cette thèse a pour objectifs de décrire l'évolution d'une marge distale au cours des premiers stades de convergence, de quantifier les processus source-réceptacle associés et d'apporter des contraintes temporelles et paléogéographiques quant à la création des tout premiers reliefs pyrénéens issus de son inversion. Grâce à l'utilisation du multi-thermochronomètre (U-Th)/He sur zircon et apatite, deux épisodes de refroidissement sont mis en évidence dans le prisme nord-pyrénéen (Campano-Maastrichtien et Eocène), chacun d'eux synchrone d'une phase de subsidence dans le bassin d'avant-pays. J'ai ainsi pu proposer un modèle équilibré d'évolution d'une marge distale hyper-amincie par inversion de structures héritées, chevauchements de socle et sous-placage continental se matérialisant par une signature thermochronologique claire de refroidissement sans érosion au début de la convergence. L'absence d'enregistrement de refroidissement au Paléocène par l'arrêt prématuré de l'inversion précoce dans le prisme nord-pyrénéen indique l'absence significative d'érosion et la position bordière de ce prisme par rapport à un édifice déjà construit plus à l'est à cette époque. Pour caractériser cet édifice aujourd'hui disparu du fait de l'ouverture du Golfe du Lion, j'ai utilisé une approche détritique de double datation in situ (U-Th)/He - U/Pb sur zircon et mis en évidence une histoire de dénudation rapide pendant le Campano-Maastrichtien, caractéristique de la création d'une topographie précoce. Ce travail montre pour la première fois clairement la migration progressive de la déformation d'est en ouest par l'inversion de structures héritées au début de la convergence pyrénéenne, ce qui suggère l'existence d'un domaine ouvert à l'est à la fin de l'épisode extensif précédant la convergence. Cette étude met en avant le rôle de l'architecture des systèmes hyper-amincis dans la formation des orogènes collisionnels et confirme les liens étroits existant entre un orogène et ses bassins d'avant-pays. / Collisional orogens are classically described as the result of continental accretion of proximal margins. This accretion leads to the creation of relief and to the important export of erosion products in the directly adjacent foreland basins. In this geodynamic scheme, only the least deformed pre-orogenic domains are considered. However, a growing number of geological field evidences indicate the preservation or even the reuse of structures inherited from the rifting phase preceding convergence and collision within orogens. By conducting a geo-thermochronometric study of the easternmost, inverted hyperextended Aptian-Cenomanian rift system (Agly massif, North Pyrenean Zone) and the adjacent early retroforeland (Rennes-les-Bains syncline, Aquitaine Basin), this thesis aims to describe the evolution of a distal rifted margin during the first stages of convergence, to quantify the associated source-to-sink processes and to provide temporal and paleogeographic constraints regarding the creation of the very first Pyrenean reliefs resulting from inversion of the margin. Using the zircon and apatite (U-Th)/He multi-thermochronometers, I show that the Pyrenean retro-wedge records two clear phases of orogenic cooling, Late Campanian-Maastrichtian and Ypresian-Bartonian, which I relate to early inversion of the distal rifted margin and main collision, respectively. I have thus been able to propose a crustal-scale sequentially restored model for the tectonic and thermal transition from extension to peak orogenesis in the eastern Pyrenees, which suggests that both thrusting and underplating processes contributed to early inversion of the Aptian-Cenomanian rift system. The absence of Paleocene cooling record indicates little to no erosion of the Pyrenean retro-wedge, suggesting the existence of a more easterly source area supplying early retroforeland sediments at this time. To characterize this eastern edifice, which has since been destroyed by the Oligocene-Miocene opening of the Gulf of Lion, I used in situ (U-Th)/He - U/Pb double dating on detrital zircons and show rapid denudation rates during early convergence, characteristic of early topographic growth. This work shows for the first time clearly the progressive migration of deformation from east to west by inversion of inherited structures at the beginning of Pyrenean convergence. This suggests the existence of an open domain in the east at the end of the rifting phase preceding convergence. This study highlights the role of the architecture of hyper-thinned systems in the formation of collisional orogens and confirms the close links between an orogen and its foreland basins.

Le besoin d'une très grande précision lors du traitement des matériaux par laser a fortement encouragé le développement des études de l'effet des impulsions ultra brèves pour la structuration des matériaux à une échelle micro et nano métrique. Une diffusion d'énergie minimale et une forte non linéarité de l'interaction permet un important confinement énergétique à des échelles les plus petites possibles. La possibilité d'introduire des changements de phases rapides et même de créer de nouveaux états de matière ayant des propriétés optimisées et des fonctions améliorées donne aux impulsions ultra brèves de sérieux arguments pour être utilisées dans des dispositifs très précis de transformation et de structuration des matériaux. L'étude de ces mécanismes de structuration et, en particulier, de leurs caractéristiques dynamiques, est une clé pour l'optimisation de l'interaction laser-matière suivant de nombreux critères utiles pour les procédés laser : efficacité, précision, qualité. Ce mémoire synthétise les travaux de l'auteur sur l'étude statique et dynamique du dépôt d'énergie ultra rapide, avec application aux procédés laser. La connaissance de la réponse dynamique des matériaux après irradiation laser ultra brève montre que les temps de relaxation pilotent l'interaction lumière-matière. Il est alors possible d'adapter l'énergie déposée à la réponse du matériau en utilisant les toutes récentes techniques de mise en forme spatio temporelle de faisceaux. Un couplage optimal de l'énergie donne la possibilité d'orienter la réponse du matériau vers un résultat recherché, offrant une grande flexibilité de contrôle des procédés et, sans doute, la première étape du développement de procédés « intelligents ».

Semi conductors are of technological importance and attracted many of the re-searchers. ZnO belongs to the family of II-VI semiconductors and has material properties well suitable to UV light emitters, varistors, Schottky diodes, gas sensors, spintronics, ferroelectric devices and thin film transistors. It has been considered as a competitor to GaN, which belongs to the family of III-V semiconductors. This is due to the fact that ZnO of high quality can be deposited at lower growth temperatures than GaN, leading to the possibility of transparent junctions on less expensive substrates such as glass. This will lead to low-cost UV lasers with important applications in high-density data storage systems etc. One of the most popular growth techniques of ZnO is physical sputtering. As compared to sol-gel and chemical-vapor deposition, the magnetron sputtering is a preferred method because of its simplicity and low operating temperatures. Hence, detailed investigations were carried out on undoped and doped ZnO thin films primarily deposited by magnetron sputtering. The obtained results in the present work are presented in the form of a thesis. Chapter 1: A brief discussion on the crystal structure of ZnO material and its possible applications in the different areas such as Schottky diodes, spintronics, ferroelectric devices and thin film transistors are presented. Chapter 2: This chapter deals with various deposition techniques used in the present study. It includes the magnetron sputtering, thermal oxidation, pulsed-laser ablation and sol-gel technique. The experimental set up details and the deposition procedures are described in detail i.e., the deposition principle and the parameters that will affect the film properties. A brief note on the structural characterization equipments namely, X-ray diffraction, scanning electron microscopy, atomic force microscopy, transmission electron microscopy and the optical characterization equipments namely, transmission spectroscopy is presented. The transport properties of the films were studied which include Dielectric studies, impedance studies, device characterization and are discussed. Chapter 3: The optimization of ZnO thin films for Schottky diode formation and The characterization of various Schottky diodes is presented in this chapter. P-type conductivity in ZnO was implemented by the variation of partial pressure of oxygen during the sputtering and are discussed. A method to achieve low series resistance hetero-junction was achieved using thermal oxidation method and the detailed transport properties were studied. The optical investigation carried out on the ZnO thin films under various growth conditions are also presented. Chapter 4: This chapter deals with the processing, structural, electrical, optical and magnetic properties of Mn doped ZnO thin films grown by pulsed laser ablation. Structural investigations have shown that the Mn incorporation increases the c-axis length due to the relatively larger ionic size of the Mn ions. Studies conducted both at low and high concentration region of Zn1¡xMnxO thin films showed that the films are anti-ferromagnetic in nature. The transport measurements revealed that the electrical conductivity is dominated by the presence of shallow traps. Optical investigations suggested the absence of midgap absorption and confirm the uniform distribution of Mn in wurtzite structure. Chapter 5: Carrier induced ferromagnetism in Co doped ZnO thin films were studied and the results are presented in this chapter. High density targets were prepared by solid state reaction process and the thin films were deposited by pulsed laser ablation technique. Two compositions were studied and it was found that with increase in substrate temperature, c-axis length decreases. Optical studies suggested a strong mid gap absorption around 2eV and could be attributed to the d-d transitions of tetrahedral coordinated Co2+. The presence of ferromagnetism in these films makes them potential candidates for spintronics applications. Chapter 6: It has been reported in literature that o®-centered polarization will drive ferroelectric phase transition. Motivated by such results, substitution of Lithium in ZnO was studied in detail. The structural and electrical properties were investigated over a wide range of composition (0-25%). The ferroelectric studies were carried out both in metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) configuration and are presented in this chapter. The appearance of Ferro electricity in these films makes them potential candidates for ferroelectric memory devices. Chapter 7: This chapter describes the studies conducted on Mg doped ZnO Thin films grown by multi-magnetron sputtering. The hexagonal phases of the films were evaluated. All the films exhibited c-axis preferred orientation towards (002) orientation. Micro structural evolutions of the films were carried out through scanning electron microscopy and atomic force microscopy. Ferroelectric properties were investigated in both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) configurations. It was observed that the Mg concentration increases the band gap and the details on optical investigations are also presented in this chapter. Chapter 8: ZnO based thin film transistors have been fabricated and characterized using ZnO as active channel layer and Mg doped ZnO as dielectric layer. Excellent leakage properties of the gate dielectric were studied and presented in this chapter. These studies demonstrated that Mg doped ZnO thin films are suitable candidates for gate dielectric applications. Conclusions: This section presents the conclusions derived out of the present work. It also includes a few suggestions on future work on this material.

System on Chip (SoC) and System in Package (SiP) are two electronic technologies that involve integrating multiple functionalities onto a single platform. When the platform is a single wafer, as in SOC, it requires the ability to deposit various materials that enable the different functions on to an underlying substrate that can host the electronic circuitry. Transition metal oxides which have a wide range of properties are ideal candidates for the functional material. Si wafer on which micro-electronics technology is widely commercialized is the ideal host platform. Integrating oxides with Si, generally in the form of thin films as required by microelectronics technology, is however a challenge. It starts with the fact that the properties of crystalline oxides to be exploited in performing various functions are direction dependent. Thus, thin films of these oxides need to be deposited on Si in certain crystallographic orientations. Even if a suitably oriented Si wafer surface were available, it does not always provide for epitaxial growth a critical requirement for controlling the crystalline orientation of thin films. This is because Si surface is covered by an amorphous oxide of Si (SiOx). Thus, during growth of the functional oxide, an ambience in which the Si itself will not oxidize needs to be provided. In addition, during thin film growth on either Si or SiOx surface stresses are generated from various sources. Stress and its relaxation are also associated with the formation and evolution of defects. Both, stress and defects need to be managed in order to harness their beneficial effects and prevent detrimental ones. Given the requirement of SoC technology and the problem associated, the research work reported in this thesis was hence concerned with the precise controlling the stress and microstructure in oxide thin films deposited on Si substrates. In order to do so a versatile, ultra high vacuum (UHV) thin film with a base pressure of 10-9 Torr was designed and built as part of this study. The chamber is capable of depositing films by both sputtering (RF & DC) and pulsed laser ablation (PLD). The system has been designed to include an optical curvature measurement tool that enabled real-time stress measurement during growth. Doped zirconia, ZrO2, was chosen as the first oxide to be deposited, as it is among the few oxides that is more stable than SiOx. It is hence used as a buffer layer. It is shown in this thesis that a change in the growth rate at nucleation can lead to (100) or (111) textured films. These two are among the most commonly preferred orientation. Following nucleation a change in growth rate does not affect orientation but affects stress. Thus, independent selection of texture and stress is demonstrated in YSZ thin films on Si. A quantitative model based on the adatom motion on the growth surface and the anisotropic growth rates of the two orientations is used to explain these observations. This study was then subsequent extended to the growth on platinized Si another commonly used Si platform.. A knowledge of the stress and microstructure tailoring in cubic zirconia on Si was then extended to look at the effect of stress on electrical properties of zirconia on germanium for high-k dielectric applications. Ge channels are expected to play a key role in next generation n-MOS technology. Development of high-k dielectrics for channel control is hence essential. Interesting stress and property relations were analyzed in ZrO2/Ge. Stress and texture in pulsed laser deposited (PLD) oxides on silicon and SrTiO3 were studied. It is shown in this thesis that stress tuning is critical to achieve the highest possible dielectric constant. The effect of stress on dielectric constant is due to two reasons. The first one is an indirect effect involving the effect of stress on phase stability. The second one is the direct effect involving interatomic distance. By stress control an equivalent oxide thickness (EOT) of 0.8 nm was achieved in sputter deposited ZrO2/Ge films at 5 nm thickness. This is among the best reported till date. Finally, the effect of growth parameters and deposition geometry on the microstructural and stress evolution during deposition of SrTiO3 on Si and BaTiO3 on SrTiO3 by pulsed laser deposition is the same chamber is described.