We present a theoretical analysis of surface-plasmon-mediated mode-coupling in a planar thin film metal/insulator stack. The spatial overlap of a surface plasmon polariton (SPP) and a waveguide mode results in a Fano interference analog. Tuning of the material parameters effects the modes and output fields of the system. Lastly, the intensity and phase sensitivity of the system are compared to a standard surface plasmon resonance (SPR). We begin with background information on Fano interference, an interference effect between two indistinguishable pathways. Originally described for autoionization, we discuss the analogs in other systems. We discuss the features of Fano interference in the mode diagrams, and the Fano resonance observed in the output field. The idea of a geometric Fano resonance (GFR) occurring in the angular domain is presented. Background information on surface plasmon polaritons is covered next. The dielectric properties of metals and how they relate to surface plasmons is first reviewed. The theoretical background of SPPs on an infinite planar surface is covered. The modes of a two planar interface metal/insulator stack are reviewed and the leaky properties of the waveguide are shown in the reflectance. We solve for modes of a three interface metal/insulator stack and shows an avoided crossing in the modes indicative of Fano interference. We observe the asymmetric Fano resonance in the angular domain in the reflectance. The tunability of the material parameters tunes the GFR of the system. The GFR tuning is explored and different Fano lineshapes are observed. We also observe a reversal of the asymmetry Fano lineshape, attributed to the relate phase interactions of the non-interacting modes. The phase of the GFR is calculated and discussed for the variations of the parameters. The reflected field is explored as the insulator permittivities are varied. As the waveguide permittivity is varied, we show there is little response from the system. As the exterior permittivity is varied, the reflectance exhibits the geometric Fano resonance and the tunability of the lineshape is explored. Finally, we calculate the sensitivities of our metal/insulator stack to changes in the permittivity and compare them to the sensitivities of SPRs.

Ng Ka Shun = La₀.₄Ca₀.₆MnO₃/La₀.₈Ca₀.₂MnO₃多層薄膜之龐磁阻 / 吳家信. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / Ng Ka Shun = La₀.₄Ca₀.₆MnO₃/La₀.₈Ca₀.₂MnO₃ duo ceng bo mo zhi pang ci zu / Wu Jiaxin. / Acknowledgements --- p.i / Abstract --- p.ii / 論文摘要 --- p.iii / Table of Contents --- p.iv / List of Figures --- p.vi / List of Tables --- p.viii / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Review of magnetresistance --- p.1-1 / Chapter 1.2 --- Colossal magnetoresistance (CMR) --- p.1-4 / Chapter 1.3 --- Possible mechanism of CMR --- p.1-7 / Chapter 1.3.1 --- Double exchange --- p.1-7 / Chapter 1.3.2 --- Phase separation and percolation theory --- p.1-9 / Chapter 1.3.3 --- Current carrier density collapse --- p.1-12 / Chapter 1.4 --- Our motivation --- p.1-14 / Chapter 1.5 --- Brief review of several manganite multilayer systems --- p.1-15 / Chapter 1.6 --- Scope of this thesis work --- p.1-16 / References --- p.1-17 / Chapter Chapter 2 --- Instrumentation / Chapter 2.1 --- Thin film deposition --- p.2-1 / Chapter 2.1.1 --- Facing target sputtering (FTS) --- p.2-1 / Chapter 2.1.2 --- Connection of heating wires and thermocouple --- p.2-5 / Chapter 2.1.3 --- Vacuum system --- p.2-7 / Chapter 2.2 --- Annealing system --- p.2-9 / Chapter 2.3 --- Characterization --- p.2-11 / Chapter 2.3.1 --- X-ray diffraction (XRD) --- p.2-11 / Chapter 2.3.2 --- Resistance measurement --- p.2-13 / Chapter 2.3.3 --- Thickness estimation --- p.2-15 / References --- p.2-15 / Chapter Chapter 3 --- Growth and characterization of LCMO single layer thin film --- p.3-1 / Chapter 3.1 --- Fabrication and characterization of LCMO targets --- p.3-1 / Chapter 3.2 --- Preparation of LCMO thin film --- p.3-5 / Chapter 3.2.1 --- Deposition conditions --- p.3-5 / Chapter 3.2.2 --- Depostion procedure --- p.3-8 / Chapter 3.2.3 --- Characterization of single layer film --- p.3-9 / References --- p.3-12 / Chapter Chapter 4 --- La0.4Ca0.6MnO3 / La0.8Ca0.2MnO3 multilayers / Chapter 4.1 --- Sample preparation --- p.4-1 / Chapter 4.2 --- Results and discussion --- p.4-4 / Chapter 4.2.1 --- Structural characterization --- p.4-4 / Chapter 4.2.2 --- Transport properties --- p.4-10 / Chapter 4.3 --- Oxygen post-annealing of multilayer thin films --- p.4-13 / Chapter 4.3.1 --- Introduction --- p.4-13 / Chapter 4.3.2 --- Oxygen post-annealing conditions --- p.4-14 / Chapter 4.3.3 --- Results and discussion --- p.4-16 / Chapter 4.4 --- Conclusion --- p.4-26 / References --- p.4-27 / Chapter Chapter 5 --- Conclusion

Cu2ZnSnS4 (CZTS), being related to the highly successful Cu(In,Ga)(S,Se)2, and CuInS2 materials, is a promising candidate for thin film photovoltaic devices. It has the advantage that it contains no rare or expensive elements, and therefore has cost-reduction potential for commercial systems. A two-stage process for fabrication of CZTS films is presented, which consists of sequential electrodeposition of Cu, Sn and Zn layers followed by a heat treatment in the presence of S vapour (‘sulfurisation’). Electrodeposition conditions are developed to give uniform Cu|Sn|Cu|Zn precursors of controlled morphology and composition, by the use of a rotating disc electrode system. Precursors are converted to CZTS by sulfurisation in the presence of elemental S, using a rapid thermal processing system (RTP). The sulfurisation reaction is studied by XRD and Raman spectroscopy as a function of temperature and at short time intervals, and a sequence of reactions is derived for the formation of CZTS. It is shown that the sulfurisation reaction occurs within minutes above 500°C. A model is presented for film formation when rapid heating rates are employed. The effects of sulfurisation time, background pressure and precursor composition on the morphological and structural properties of the CZTS films are investigated. Observations of grain size changes and compositional modification are made and explained in terms of the likely secondary phases present. The opto-electronic properties of the CZTS films are measured using a photoelectrochemical technique. Changes in the external quantum efficiency and band gap are studied as a function of sulfurisation parameters and precursor composition. After crystallisation of the CZTS phase during sulfurisation, the photocurrent obtained from the films continued to rise upon heating in the absence of S, which is explained by changes in acceptor concentration. Large shifts in the band gap are seen, and some proposals are made to explain the behaviour. The observations are discussed in the context of the particular compositions and sulfurisation conditions routinely used in the CZTS literature, and recommendations are made for further work.

β-W is an A15 structured phase commonly found in tungsten thin films together with the bcc structured W, and it has been found that β-W has the strongest spin Hall effect among all metal thin films. Therefore, it is promising for application in spintronics as the source of spin-polarized current that can be easily manipulated by electric field. However, the deposition conditions and the formation mechanism of β-W in thin films are not fully understood. The existing deposition conditions for β-W make use of low deposition rate, high inert gas pressure, substrate bias, or oxygen impurity to stabilize the β-W over α-W, and these parameters are unfavorable for producing β-W films with high quality at reasonable yield. In order to optimize the deposition process and gain insight into the formation mechanism of β-W, a novel technique using nitrogen impurity in the pressure range of 10-5 to 10-6 torr in the deposition chamber is introduced. This techniques allows the deposition of pure β-W thin films with only incorporation of 0.4 at% nitrogen and 3.2 at% oxygen, and β-W films as thick as 1μm have been obtained. The dependence of the volume fraction of β-W on the deposition parameters, including nitrogen pressure, substrate temperature, and deposition rate, has been investigated. The relationship can be modeled by the Langmuir-Freundlich isotherm, which indicates that the formation of β-W requires the adsorption of strongly interacting nitrogen molecules on the substrate. The dependence of β-W formation on the choice of underlayer materials has also been investigated. The β-W phase can only be obtained on the underlayer materials containing non-metallic elements. The dependence is explained by the existence of strong covalent bonds in β-W compared with that in α-W. The nickel and permalloy underlayers are the only exception to the above rule, and β-W has been successfully deposited on permalloy underlayer using very low deposition rate for spin-diffusion length measurement of β-W. The permalloy thin films usually take the (111) texture, since its (111) planes have the lowest surface energy. However, permalloy thin films deposited on β-W underlayer can achieve (002) texture using amorphous glass substrates. Therefore, the permalloy/β-W bilayer system can work as a seed layer for the formation of (002) textured films with fcc or bcc structure. The mechanism of the (002) texture formation cannot be explained by the existing models. The β-W to α-W phase transition was characterized by differential scanning calorimetry. The enthalpy of transformation is measured to be 8.3±0.4 kJ/mol, consistent with the value calculated using density functional theory. The activation energy for the β-W to α-W phase transformation kinetics is 2.2 eV, which is extremely low compared with that of lattice and grain boundary diffusion in tungsten. The low activation energy might be attributed to a diffusionless shuffle transformation process.

by Yueng Hiu Wa. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2001. / Includes bibliographical references (leaf 56). / Text in English; abstracts in English and Chinese. / by Yueng Hiu Wa. / Acknowledgements --- p.i / Abstract --- p.ii / 論文摘要 --- p.iii / Table of contents --- p.iv / List of Figures --- p.v / List of Tables --- p.vi / Chapter Chapter I --- Introduction / Chapter 1.1 --- Development of magnetoresistance materials --- p.1 / Chapter 1.1.1 --- Magnetoresistance (MR) --- p.1 / Chapter 1.1.2 --- Giant magnetoresistance (GMR) --- p.1 / Chapter 1.1.3 --- Colossal magnetoresistance (CMR) in rare-earth manganites ..… --- p.4 / Chapter 1.2 --- Our research motivation --- p.5 / Chapter 1.2.1 --- Scope of this thesis --- p.7 / Chapter Chapter II --- Instrumentation / Chapter 2.1 --- Vacuum annealing system --- p.8 / Chapter 2.2 --- X-ray diffraction (XRD) --- p.11 / Chapter 2.3 --- Rutherford backscattering spectroscopy --- p.13 / Chapter Chapter III --- Oxygen diffusion / Chapter 3.1 --- Introduction --- p.15 / Chapter 3.2 --- Theory --- p.16 / Chapter 3.3 --- Experimental --- p.21 / Chapter 3.4 --- Result and discussion --- p.24 / Chapter Chapter IV --- Vacuum annealing effect in La0.67Ca0.33Mn03 thin films / Chapter 4.1 --- Introduction --- p.31 / Chapter 4.2 --- Principles of resonant RBS and ion channeling --- p.32 / Chapter 4.2.1 --- Resonant RBS and its application / Chapter 4.2.2 --- Ion channeling and its application / Chapter 4.3 --- Experimental --- p.39 / Chapter 4.4 --- Data analysis and discussion --- p.48 / Chapter 4.5 --- Conclusion --- p.50 / Chapter Chapter V --- Conclusion

Made available in DSpace on 2014-06-11T19:31:03Z (GMT). No. of bitstreams: 0 Previous issue date: 2011-12-05Bitstream added on 2014-06-13T20:41:14Z : No. of bitstreams: 1 lima_ec_dr_ilha.pdf: 2673140 bytes, checksum: 4fe5d64f1442666680854f09eb619017 (MD5) / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / O sistema ferroelétrico PbZr1-xTixO3 (PZT) vem sendo amplamente estudado devido às interessantes propriedades físicas para composições próximas ao Contorno de Fases Morfotrópico (CFM). A compreensão da fenomenologia de filmes ferroelétricos está atualmente sob intensa investigação, pois o fenômeno da ferroeletricidade exibe uma dependência intrínseca com relação à dimensão das amostras. O processamento de filmes é muito importante para o desenvolvimento da miniaturização de dispositivos eletrônicos com baixo consumo de energia e baixa tensão de operação. Desta forma, os métodos químicos tem tido grande evolução com respeito à obtenção de filmes com boa homogeneidade e cristalinidade. As temperaturas de pirólise e de cristalização desempenham um papel fundamental na cristalinidade dos filmes. Devido às altas temperaturas de obtenção dos filmes produzidos com os métodos químicos, a volatilidade do óxido de chumbo no sistema PZT torna-se um problema fundamental para discussão. Esta observação evidenciou a presença de uma fase indesejada intitulada pirocloro. A resposta dielétrica e ferroelétrica dos filmes obtidos com a fase pirocloro revela uma degradação destas propriedades. Para contornar o problema várias hipóteses foram testadas a fim de encontrar um meio para supressão da fase pirocloro. Desta forma, a síntese dos filmes foi empregada de forma a estudar o desempenho do excesso de óxido de chumbo em função da temperatura de pirólise para diferentes substratos. A transformação da fase pirocloro para perovskita foi reportada em função da temperatura de pirólise. Diferentes técnicas experimentais foram utilizadas neste estudo visando mapear a estrutura cristalina de longo e curto alcance ao longo da espessura dos filmes, o stress/strain residual em torno da interface... / The system ferroelectric PbZr1-xTixO3 (PZT) has been widely studied due to interesting physical properties for compositions near the Morphotropic Phase Boundary (MPB). The understanding of the phenomenology of ferroelectric films is currently under intense investigation, because the phenomenon of ferroelectricity shows an intrinsic dependence with respect to sample size. The film processing is very important for the development of miniaturization of electronic devices with low power consumption and low voltage operation. Therefore, chemical methods have had great progress with respect to obtaining films with good homogeneity and crystallinity. The pyrolysis temperature and crystallization play a key role in the crystallinity of the films. Due to high temperatures for obtaining films with chemical methods, the volatility of lead oxide in the PZT system becomes a fundamental problem for discussion. This observation revealed the presence of an unwanted entitled pyrochlore phase. The ferroelectric and dielectric response of the films obtained with the pyrochlore phase shows a degradation of these properties. To overcome this problem several hypotheses were tested in order to find a way to suppress the pyrochlore phase. Thus, the synthesis of the films was employed in order to study the performance of the excess lead oxide as a function of pyrolysis temperature for different substrates. The transformation of pyrochlore to perovskite phase was reported as a function of pyrolysis temperature. Different experimental techniques were used in this study to map the crystal structure of long and short range along the different thicknesses of the films, the stress/strain residual around the interface film/substrate, morphology, electrical properties, piezoelectric and ferroelectric films. The integrated analysis of the results aims to understand the phenomenology associated with the origins of self-polarization in ferroelectric thin films

Orientador: Eudes Borges de Araújo / Banca: José de los Santos Guerra / Banca: Keizo Yukimitu / Banca: Antonio Sergio Bezerra Sombra / Banca: José Antonio Eiras / Resumo: O sistema ferroelétrico PbZr1-xTixO3 (PZT) vem sendo amplamente estudado devido às interessantes propriedades físicas para composições próximas ao Contorno de Fases Morfotrópico (CFM). A compreensão da fenomenologia de filmes ferroelétricos está atualmente sob intensa investigação, pois o fenômeno da ferroeletricidade exibe uma dependência intrínseca com relação à dimensão das amostras. O processamento de filmes é muito importante para o desenvolvimento da miniaturização de dispositivos eletrônicos com baixo consumo de energia e baixa tensão de operação. Desta forma, os métodos químicos tem tido grande evolução com respeito à obtenção de filmes com boa homogeneidade e cristalinidade. As temperaturas de pirólise e de cristalização desempenham um papel fundamental na cristalinidade dos filmes. Devido às altas temperaturas de obtenção dos filmes produzidos com os métodos químicos, a volatilidade do óxido de chumbo no sistema PZT torna-se um problema fundamental para discussão. Esta observação evidenciou a presença de uma fase indesejada intitulada pirocloro. A resposta dielétrica e ferroelétrica dos filmes obtidos com a fase pirocloro revela uma degradação destas propriedades. Para contornar o problema várias hipóteses foram testadas a fim de encontrar um meio para supressão da fase pirocloro. Desta forma, a síntese dos filmes foi empregada de forma a estudar o desempenho do excesso de óxido de chumbo em função da temperatura de pirólise para diferentes substratos. A transformação da fase pirocloro para perovskita foi reportada em função da temperatura de pirólise. Diferentes técnicas experimentais foram utilizadas neste estudo visando mapear a estrutura cristalina de longo e curto alcance ao longo da espessura dos filmes, o stress/strain residual em torno da interface... (Resumo completo, clicar acesso eletrônico abaixo) / Abstract: The system ferroelectric PbZr1-xTixO3 (PZT) has been widely studied due to interesting physical properties for compositions near the Morphotropic Phase Boundary (MPB). The understanding of the phenomenology of ferroelectric films is currently under intense investigation, because the phenomenon of ferroelectricity shows an intrinsic dependence with respect to sample size. The film processing is very important for the development of miniaturization of electronic devices with low power consumption and low voltage operation. Therefore, chemical methods have had great progress with respect to obtaining films with good homogeneity and crystallinity. The pyrolysis temperature and crystallization play a key role in the crystallinity of the films. Due to high temperatures for obtaining films with chemical methods, the volatility of lead oxide in the PZT system becomes a fundamental problem for discussion. This observation revealed the presence of an unwanted entitled pyrochlore phase. The ferroelectric and dielectric response of the films obtained with the pyrochlore phase shows a degradation of these properties. To overcome this problem several hypotheses were tested in order to find a way to suppress the pyrochlore phase. Thus, the synthesis of the films was employed in order to study the performance of the excess lead oxide as a function of pyrolysis temperature for different substrates. The transformation of pyrochlore to perovskite phase was reported as a function of pyrolysis temperature. Different experimental techniques were used in this study to map the crystal structure of long and short range along the different thicknesses of the films, the stress/strain residual around the interface film/substrate, morphology, electrical properties, piezoelectric and ferroelectric films. The integrated analysis of the results aims to understand the phenomenology associated with the origins of self-polarization in ferroelectric thin films / Doutor

No description available.

by Zhu, Ming. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2008. / Includes bibliographical references (leaves 73). / Abstracts in English and Chinese. / ABSTRATE (ENGLISH) --- p.I / ABSTRATE (CHINESE) --- p.III / ACKNOWLEDGEMENTS --- p.V / TABLE OF CONTENTS --- p.VI / Chapter 1. --- Introduction --- p.1 / Chapter 1.1 --- Introduction to organic semiconductors --- p.1 / Chapter 1.2 --- Charge transport in organic semiconductors --- p.1 / Chapter 1.2.1 --- Polaron models --- p.2 / Chapter 1.2.2 --- Scher-Montroll model --- p.2 / Chapter 1.2.3 --- Gaussian disorder model --- p.3 / Chapter 1.3 --- Organic semiconductors in this thesis --- p.5 / Chapter 1.4 --- Several key issues --- p.6 / References --- p.7 / Chapter 2. --- Experimental Techniques --- p.9 / Chapter 2.1 --- Materials Purification --- p.9 / Chapter 2.1.1 --- Motivation --- p.9 / Chapter 2.1.2 --- Basic principle --- p.9 / Chapter 2.1.3 --- Purification setup --- p.10 / Chapter 2.1.4 --- Parameters optimization --- p.11 / Chapter 2.2 --- Sample Fabrication --- p.11 / Chapter 2.2.1 --- Substrate treatment --- p.12 / Chapter 2.2.2 --- Thermal vacuum evaporation --- p.12 / Chapter 2.2.3 --- Spin coating --- p.12 / Chapter 2.3 --- Electrical measurement techniques --- p.13 / Chapter 2.3.1 --- J-V characteristics --- p.13 / Chapter 2.3.1.1 --- Injection versus bulk limited current --- p.13 / Chapter 2.3.1.2 --- Space Charge Limited Current --- p.15 / Chapter 2.3.1.3 --- Trap controlled Space Charge Limited Current --- p.15 / Chapter 2.3.2 --- Admittance spectroscopy --- p.17 / References --- p.20 / Chapter 3. --- Steady state J-V characteristics of organic thin films in sandwiched structures --- p.22 / Chapter 3.1 --- Experimental --- p.22 / Chapter 3.2 --- Results and discussions --- p.23 / Chapter 3.2.1 --- J-V characteristics of CuPc and TPD-PS thin films --- p.23 / Chapter 3.2.2 --- J-V characteristics of CuPc thin films with different cathodes --- p.26 / Chapter 3.2.3 --- Variable temperature J-V characteristics of CuPc thin films --- p.28 / References --- p.31 / Chapter 4. --- Dynamic Properties of Organic Semiconductors Performed by Admittance Spectroscopy --- p.32 / Chapter 4.1 --- Introduction to admittance spectroscopy --- p.32 / Chapter 4.2 --- Theoretical models --- p.32 / Chapter 4.3 --- Experimental --- p.36 / Chapter 4.3.1 --- Experimental scheme --- p.36 / Chapter 4.3.2 --- Sample preparation --- p.36 / Chapter 4.4 --- Results and discussion --- p.37 / Chapter 4.4.1 --- Unpurified CuPc --- p.37 / Chapter 4.4.2 --- Purified CuPc --- p.40 / Chapter 4.5 --- Conclusion --- p.43 / References --- p.44 / Chapter 5. --- Air-induced Trap Effect in Organic Semiconductors --- p.45 / Chapter 5.1 --- Introduction to negative capacitance phenomenon --- p.45 / Chapter 5.2 --- Experimental --- p.46 / Chapter 5.3 --- Results and discussion --- p.46 / Chapter 5.3.1 --- Admittance spectroscopy with different electrodes --- p.46 / Chapter 5.3.2 --- Admittance spectroscopy with different concentrations of oxygen --- p.48 / Chapter 5.3.3 --- Admittance spectroscopy with different humidities --- p.50 / Chapter 5.4 --- Conclusion --- p.53 / References --- p.56 / Chapter 6. --- N-type Doping of Magnesium to Zinc-Phthalocyanine (ZnPc) --- p.58 / Chapter 6.1 --- Introduction --- p.58 / Chapter 6.2 --- Experimental --- p.60 / Chapter 6.3 --- Results and discussion --- p.61 / Chapter 6.4 --- Conclusion --- p.66 / References: --- p.67 / Chapter 7. --- Summary and future work --- p.68 / Summary --- p.68 / Future work --- p.69 / References: --- p.72 / Appendix --- p.73

Spintronics reaches beyond typical charge-based information storage technologies by utilizing an addressable degree of freedom for electron manipulation, the electron spin polarization. With mounting experimental data and improved theoretical understanding of spin manipulation, spintronics has become a potential alternative to charge-based technologies. However, for a long time, spintronics was not thought to be feasible without the ability to electrostatically control spin conductance at room temperature. Only recently, graphene, a 2D honeycomb crystalline allotrope of carbon only one atom thick, was identified because of its predicted, long spin coherence length and experimentally realized electrostatic gate tunability. However, there exist several challenges with graphene spintronics implementation including weak spin-orbit coupling that provides excellent spin transfer yet prevents charge to spin current conversion, and a conductivity mismatch due to the large difference in carrier density between graphene and a ferromagnet (FM) that must be mitigated by use of a tunnel barrier contact. Additionally, the usage of graphene produced via CVD methods amenable to semiconductor industry in conjunction with graphene spin valve fabrication must be explored in order to promote implementation of graphene-based spintronics. Despite advances in the area of graphene-based spintronics, there is a lack of understanding regarding the coupling of industry-amenable techniques for both graphene synthesis and lateral spin valve fabrication. In order to make any impact on the application of graphene spintronics in industry, it is critical to demonstrate wafer-scale graphene spin devices enabled by wafer-scale graphene synthesis, which utilizes thin film, wafer-supported CVD growth methods. In this work, high-quality graphene was synthesized using a vertical cold-wall furnace and catalyst confinement on both SiO2/Si and C-plane sapphire wafers and the implementation of the as-grown graphene for fabrication of graphene-based non-local spin valves was examined. Optimized CVD graphene was demonstrated to have ID/G ≈ 0.04 and I2D/G ≈ 2.3 across a 2" diameter graphene film with excellent continuity and uniformity. Since high-quality, large-area, and continuous CVD graphene was grown, it enabled the fabrication of large device arrays with 40 individually addressable non-local spin valves exhibiting 83% yield. Using these arrays, the effects of channel width and length, ferromagnetic-tunnel barrier width, tunnel barrier thickness, and level of oxidation for Ti-based tunnel barrier contacts were elucidated. Non-local, in-plane magnetic sweeps resulted in high signal-to-noise ratios with measured ΔRNL across the as-fabricated arrays as high as 12 Ω with channel lengths up to 2 µm. In addition to in-plane magnetic field spin signal values, vertical magnetic field precession Hanle effect measurements were conducted. From this, spin transport properties were extracted including: spin polarization efficiency, coherence lifetime, and coherence distance. The evaluation of industry-amenable production methods of both high-quality graphene and lateral graphene non-local spin valves are the first steps toward promoting the feasibility of graphene as a lateral spin transport interconnect material in future spintronics applications. By addressing issues using a holistic approach, from graphene synthesis to spin transport implementation, it is possible to begin assessment of the challenges involved for graphene spintronics.