The research in permanent magnet thin films focuses on the search of new materials and methods to increase the prevalent data storage limit. In the recent past the work towards the application of these films to micro systems have also gained momentum. Materials like samarium cobalt with better magnetic properties and temperature stability are considered to be suitable in this regard. The essential requirement in miniaturization of these films is to deposit them on silicon substrates that can alleviate the micro fabrication process. In this work, an effort has been made to deposit SmCo films with better magnetic properties on silicon substrates. In the deposition of SmCo, the composition of the deposited films and the structural evolution are found to play an important role in determining the magnetic properties. Proper control over these parameters is essential in controlling the magnetic properties of the deposited films. SmCo being a two component material the composition of the films is dependent on the nature of the source and the transport of the material species from source to substrate. On the other hand, structural evolution is dependent on the energetical considerations between the SmCo lattice and substrate lattice. This most often is dominated by the lattice match between the condensing lattice and the substrate lattice. As such Si does not provide good lattice match to SmCo lattice. Hence suitable underlayers are essential in the deposition of these films. Materials like W, Cu, Mo and Cr were used as underlayers. Out of all these Cr is found to provide good lattice match and adhesion to SmCo lattice. Sputtering being the common deposition tool, SmCo could be sputtered either from the elemental targets of Sm and Co or from the compound target of SmCo5. Sputtering of elemental targets of Sm and Co provides the flexibility of varying the composition whereas sputtering from the SmCo alloy target provides to flexibility of controlling the structural evolution by different process parameters. In this work two different techniques namely Facing Target Sputtering (FTS) and Ion Beam Sputter Deposition (IBSD) were followed in depositing SmCo films. In FTS technique, SmCo films were directly deposited on silicon substrates by simultaneous sputtering of samarium and cobalt targets facing each other. This sputtering geometry enabled to achieve films with a wide composition range of 55 – 95 at. % of cobalt in single deposition. The resulting composition variation and material property variation were investigated in terms of process parameters like pressure, temperature, SubstrateTarget Distance (STD) and InterTarget Distance (ITD). The composition distribution of the films was found to be dependent on the thermalisation distances and the mean free path available during the transport. To explain the process and the composition variation, a simulation model based on Monte Carlo method has been employed. The simulated composition variation trends were in good agreement with that of the experimental observations. IBSD, known for its controlled deposition, was employed to deposit both Cr (as an underlayer) and SmCo films. Cr with close epitaxial match with SmCo induces structural evolution in deposited films. The initial growth conditions were found to play a dominant role in the structural evolution of these Cr films. Hence, initial growth conditions were modified by means of oblique incidence and preferential orientation of (200) plane was obtained. With three different angles of incidence, three different surface orientations of Cr films were achieved. These films were then used as structural templates in the deposition of SmCo films. The influence of parameters like composition, impurities, film thickness, beam energy, ion flux, annealing, angles of incidence and underlayer properties on the structural and magnetic properties of SmCo was studied. The structural evolution of SmCo has been found to depend on the structural orientation of Cr underlayers. This followed the structural relation of SmCo(100)||Cr(110)||Si(100) and SmCo(110)||Cr(100)||Si(100). A mixed surface plane orientation was observed in the case of mixed orientation Cr template. The magnetic coercivities were found to increase from 50 Oe to 5000 Oe with the change in the structure of the deposited films.

NiTiCu is a shape memory alloy that regains its original shape after large amount of shape changing deformation when heated above a critical temperature called reverse martensitic trans-formation temperature( Af). When external load is applied on the sample in twinned martensite phase at low temperature, it deforms by detwinning, accommodating large amount of strains. When it is heated above Af, the shape recovers by transformation of the martensite to austenite phase. However, the amount of shape recovery degrades over time due to internal factors such as precipitates, residual strains and thermal history as well as external factors such as stresses. Severe localized stresses induced by contacts result in plastic deformation that affect the reverse martensitic transformation and hence the shape recovery. In this work, we study how varying levels of contact stresses induced in NiTiCu thin film affect its shape recovery. NiTiCu thin films of six different compositions are deposited on Si(100) wafer by co-sputtering from elemental targets. After deposition, the films are annealed at 500 C for 4 h to make them crystalline. The composition of the films varied linearly with applied power to the targets. Uniformity in composition over a 4 inch substrate area is achieved by substrate rotation. All the films show ne grain microstructure after annealing. The subsurface of the Ni-rich films is columnar. Ni-rich films have annealing cracks and the crack width increases with Ni composition in the films. The roughness of as-deposited films is found to be more for Ni-rich films compared to Ti-rich films. The roughness of the Ni-rich and Ti-rich films increased after annealing. From the X-ray diffraction studies, it was observed that the films are nanocrystalline. Indentation is carried out using a Berkovich diamond indenter with spherical apex, at nine different locations with loads ranging from 0.25 mN to 25 mN. A predefined array is chosen for indentation such that the larger indents act as a guide to precisely locate minute indents generated at lower loads, with residual depth as small as 10 nm, for imaging in high-resolution microscopes like Scanning Electron Microscope as well as in Atomic Force Microscope . In Ti60 (a Ti-rich) lm, the residual indents generated at loads greater than 10 mN show radial cracks originating at corners. Average crack length increases with the maximum load used for generating the indent. Sequential sectioning of Ti48 (a Ni-rich) lm using Focused Ion Beam microscope, revealed that the cracks originate at the lm-substrate interface and reach the surface. In Ti48 lm, residual indents do not show any indentation cracks. The indentation stresses are accommodated by breaking of the columnar structure and the voids between them. Delamination of the film from the substrate is observed on either sides of the indent in both the Ti60 and Ti48 films. The hardness of the films is high at low loads and decrease as the load increases. The deformation by indentation at lower loads is mainly due to detwinning as only the apex of the indenter, which is nearly spherical, is in contact with the sample and the resulting stresses are low. As the load increases, the deformation starts getting accommodated through dislocations along with detwinning as the stress beneath the indenter increases. Spherical cavity model extended to SMA shows that inner hemisphere near the tip contains dislocations where stresses are very high, surrounded by detwinned region with stresses that are relatively low. When the sample is heated above reverse martensitic transformation temperature to induce shape recovery in the indents, only the detwinned region recovers to the original shape. Recovery ratio, quantification of shape recovery, is calculated from the depth of the indents before and after heating. Recovery ratio in Ti60 films is found to be large at low loads and decreases with increase in load. The decrease in shape recovery in Ti60 is attributed to the increase in the amount of plastic deformation at the expense of detwinning. Three-dimensional mapping of the surfaces shows that the recovery ratio is high at the apex of the indent at the maximum depth and reduces towards the edges of the indent. There is no evident recovery in Ti48 films. The shape recovery of SMAs can be achieved by Joule heating. When electric current is passed through the material, it heats up by Joule heating because of the intrinsic resistivity. The resistivity and hence the resistance would get effected by the dislocation based plastic deformation induced by the contact. This might result in shape recovery through resistive heating. Towards understanding this, the effect of contact stresses on electrical contact resistance is studied. Experimental setup is designed, developed and calibrated for studying the variation of electrical contact resistance of the NiTiCu thin films as a function of load. Electrical contact resistance is found to decrease with increase in applied load. Contact stresses in sub-micron NiTiCu thin films are simulated by carrying out nanoindentation at different loads. The recovery ratio is high when the stresses induced by the contact is less, at lower loads. The shape recovery ratio is reduced when the induced contact stresses in-creases. There is no shape recovery at the sharp edges of the indentation where contact stresses are very high. Hence, by carefully designing the features to reduce the stress concentrations, the performance of the device can be improved.

Semi conductors are of technological importance and attracted many of the re-searchers. ZnO belongs to the family of II-VI semiconductors and has material properties well suitable to UV light emitters, varistors, Schottky diodes, gas sensors, spintronics, ferroelectric devices and thin film transistors. It has been considered as a competitor to GaN, which belongs to the family of III-V semiconductors. This is due to the fact that ZnO of high quality can be deposited at lower growth temperatures than GaN, leading to the possibility of transparent junctions on less expensive substrates such as glass. This will lead to low-cost UV lasers with important applications in high-density data storage systems etc. One of the most popular growth techniques of ZnO is physical sputtering. As compared to sol-gel and chemical-vapor deposition, the magnetron sputtering is a preferred method because of its simplicity and low operating temperatures. Hence, detailed investigations were carried out on undoped and doped ZnO thin films primarily deposited by magnetron sputtering. The obtained results in the present work are presented in the form of a thesis. Chapter 1: A brief discussion on the crystal structure of ZnO material and its possible applications in the different areas such as Schottky diodes, spintronics, ferroelectric devices and thin film transistors are presented. Chapter 2: This chapter deals with various deposition techniques used in the present study. It includes the magnetron sputtering, thermal oxidation, pulsed-laser ablation and sol-gel technique. The experimental set up details and the deposition procedures are described in detail i.e., the deposition principle and the parameters that will affect the film properties. A brief note on the structural characterization equipments namely, X-ray diffraction, scanning electron microscopy, atomic force microscopy, transmission electron microscopy and the optical characterization equipments namely, transmission spectroscopy is presented. The transport properties of the films were studied which include Dielectric studies, impedance studies, device characterization and are discussed. Chapter 3: The optimization of ZnO thin films for Schottky diode formation and The characterization of various Schottky diodes is presented in this chapter. P-type conductivity in ZnO was implemented by the variation of partial pressure of oxygen during the sputtering and are discussed. A method to achieve low series resistance hetero-junction was achieved using thermal oxidation method and the detailed transport properties were studied. The optical investigation carried out on the ZnO thin films under various growth conditions are also presented. Chapter 4: This chapter deals with the processing, structural, electrical, optical and magnetic properties of Mn doped ZnO thin films grown by pulsed laser ablation. Structural investigations have shown that the Mn incorporation increases the c-axis length due to the relatively larger ionic size of the Mn ions. Studies conducted both at low and high concentration region of Zn1¡xMnxO thin films showed that the films are anti-ferromagnetic in nature. The transport measurements revealed that the electrical conductivity is dominated by the presence of shallow traps. Optical investigations suggested the absence of midgap absorption and confirm the uniform distribution of Mn in wurtzite structure. Chapter 5: Carrier induced ferromagnetism in Co doped ZnO thin films were studied and the results are presented in this chapter. High density targets were prepared by solid state reaction process and the thin films were deposited by pulsed laser ablation technique. Two compositions were studied and it was found that with increase in substrate temperature, c-axis length decreases. Optical studies suggested a strong mid gap absorption around 2eV and could be attributed to the d-d transitions of tetrahedral coordinated Co2+. The presence of ferromagnetism in these films makes them potential candidates for spintronics applications. Chapter 6: It has been reported in literature that o®-centered polarization will drive ferroelectric phase transition. Motivated by such results, substitution of Lithium in ZnO was studied in detail. The structural and electrical properties were investigated over a wide range of composition (0-25%). The ferroelectric studies were carried out both in metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) configuration and are presented in this chapter. The appearance of Ferro electricity in these films makes them potential candidates for ferroelectric memory devices. Chapter 7: This chapter describes the studies conducted on Mg doped ZnO Thin films grown by multi-magnetron sputtering. The hexagonal phases of the films were evaluated. All the films exhibited c-axis preferred orientation towards (002) orientation. Micro structural evolutions of the films were carried out through scanning electron microscopy and atomic force microscopy. Ferroelectric properties were investigated in both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) configurations. It was observed that the Mg concentration increases the band gap and the details on optical investigations are also presented in this chapter. Chapter 8: ZnO based thin film transistors have been fabricated and characterized using ZnO as active channel layer and Mg doped ZnO as dielectric layer. Excellent leakage properties of the gate dielectric were studied and presented in this chapter. These studies demonstrated that Mg doped ZnO thin films are suitable candidates for gate dielectric applications. Conclusions: This section presents the conclusions derived out of the present work. It also includes a few suggestions on future work on this material.

The present study describes the growth and characterization of pulsed laser ablated Bao.sSro.sTiOs (BST) thin films. Emphasis has been laid on the study of a plausible correlation between structure and property in order to optimize the processing parameters suitably for required application. An attempt has been made to understand the basic properties such as, origin of dielectric response, charge transfer under low and high-applied electric fields across the BST capacitor and finally the dielectric breakdown process. Chapter 1 gives a brief introduction on the application of ferroelectric thin films in microelectronic industry and its growth techniques. It also addresses the present issues involved in the introduction of BST as a capacitor material for high-density dynamic random access memories. Chapter 2 outlines the motivation for the present study and briefly outlines the research work involved. Chapter 3 describes the experimental procedure involved in the growth and characterization of BST thin films using pulsed laser ablation technique. Details include the setup design for PLD growth, material synthesis for the ceramic targets, deposition conditions used for thin film growth and basic characterizations methods used for study of the grown films. Chapter 4 describes the effect of systematic variation of deposition parameters on the physical and electrical properties of the grown BST films. The variation in processing conditions has been found to directly affect the film crystallinity, structure and morphology. The change observed in these physical properties may also be correlated to the observed electrical properties. This chapter summarizes the optimal deposition conditions required for growing BST thin films using a pulsed laser ablation technique. Microstructure of BST films has been categorized into two types: (a) Type I structure, with multi-grains through the film thickness, for amorphous as-grown films after high temperature annealing (exsitu crystallized), and (b) columnar structure (Type II) films, which were as-grown well-crystallized films, deposited at high temperatures. The ac electrical properties have been reviewed in detail in Chapter 5. Type I films showed a relatively lower value of dielectric constant (e ~ 426) than Type II films with dielectric constant around 567. The dissipation factors were around 0.02 and 0.01 for Type I and Type II films respectively. The dispersion in the frequency domain characteristics has been quantitatively explained using Jonscher's theory. Complex impedance spectroscopy employed showed significant grain boundary response in the case of multi-grained Type I films while negligible contribution from grain boundaries has been obtained in the case of columnar grained Type II BST films. The average relaxation time r obtained from the complex impedance plane plots show almost three orders higher values for Type I films. The obtained results suggest that in multi-grained samples, grain boundary play a major role in electrical properties. This has been explained in accordance to a model proposed on the basis of depleted grains in the case of Type I films where the grain sizes are smaller than the grain boundary depletion width. Chapter 6 describes the dc leakage properties of the grown BST thin films and the influence of microstructure on the leakage properties. It was evident from the analysis of the graph of leakage current against measurement temperature, that, the observed leakage behavior in BST films, can not be attributed to a single charge transport mechanism. For Type I films, the Arrhenius plot of the leakage current density with 1000/T exhibits different regions with activation energy values in the range of 0.5 and 2.73 for low fields (2.5kV/cm). The activation energy changes over to 1.28 eV at high fields (170 kV/cm). The obtained values agree well with that obtained from the ac measurements, thus implying a similarity in the origin of the transport process. The activation energy value in the range of 0.5 eV is attributed to the electrode/film Schottky barrier, while the value in the range of 2.73 eV is due to deep trap levels originating from Ti+3 centers. The value in the range of 1.28 eV has been attributed to oxygen vacancy motion. Similar results have been obtained from the Arrhenius plot of the leakage current for Type II films. In this case, only two different activation energy values can be identified in the measured temperature and applied electric field range. At low fields the activation energy value was around 0.38 eV while at high fields the value was around 1.06 eV. These values have been identified to be originating from the electrode/film Schottky barrier and oxygen vacancy motion respectively. Thus a complete picture of the charge transport process in the case of BST thin film may be summarized as comprising of both electronic motion as well as contribution from oxygen vacancy motion. The effect of electrical stress on the capacitance-voltage (C-V) and the leakage current has been analyzed in Chapter 7. From the change in the zero bias capacitance after repeated electron injection through the films the values of the electronic capture cross-section and the total trap density for Type I and II films have been estimated. The results showed higher values for Type I film in comparison to Type II films. The difference has been attributed to the presence of grain boundaries and a different interface in the case of Type I films when compared to Type II films where the absence of grain boundaries is reflected in the columnar microstructure. A study of the time-dependent-dielectric-breakdown (TDDB) characteristics under high fields for Type I and Type II films showed higher endurance for Type I film. On the other hand space-charge-transient characteristics have been observed in the case of Type II films at elevated temperature of measurement. Mobility and activation energy values extracted from the transient characteristics are found to be in the range of 1 x 10~12 cm2 /V-sec and 0.73 eV respectively, suggesting a very slow charge transport process, which has been attributed to the motion of oxygen vacancies. An overall effect of electrical stress suggested that oxygen vacancy motion can be related to the observed resistance degradation and TDDB, which has been further enhanced by the combination of high temperature and high electric fields. Chapter 8 deals with the effect of intentional doping in the BST films. The doping includes Al at the Ti-site, Nb in the Ti-site and La at the Ba/Sr-site. The effect of doping was observed both on the structure and electrical properties of the BST films. Acceptor doping of 0.1 atomic 7c Al was found to decrease the dielectric constant as well as the leakage current. For higher concentration of acceptor-dopant, the leakage current was found to increase while showing space-charge-transient in the TDDB characteristics, again suggesting the effect of increased concentration of oxygen vacancies. Donor doping using 2 atomic % La and Xb significantly improved the leakage as well as the TDDB characteristics by reducing the concentration of oxygen vacancies. A further procedure using graded donor doping in the BST films exhibits even better leakage and TDDB properties. An unconventional, graded doping of donor cations has been carried out to observe the impact on leakage behavior, in particular. The leakage current measured for a graded La-doped BST film show almost six orders of lower leakage current in comparison to undoped BST films, while endurance towards breakdown has been observed to increase many-fold. Chapter 9 highlights the main findings of the work reported in this thesis and lists suggestions for future work, to explore new vistas ahead.

After the advent of nanotechnology, self-assembly has become an active area of research, as it being one of the few efficient methods to generate ensembles of nanostructures. In this thesis, we present studies on two dimensional self-assembly of polymer grafted nanoparticle (PGNPs) and thin film modelling approach to understand the physics involved in the self-assembly mechanism of polymeric nanoparticles. The two dimensional, hierarchical assemblies of PGNPs are created from evaporating solution films spread at the air-water interface using Langmuir-Blodgett technique. A transition in the patterns is observed with increase in concentration which is followed by a remarkable re-entrance of initial patterns with further concentration increment. The pattern is long length scale network type at low and high concentrations whereas it is short length scale distribution of clusters at intermediate concentrations. Clusters are composed of lateral arrangement of individual PGNPs. The characteristics of clusters are tailored by changing various experimental conditions such as molecular weight of the grafted chains, concentration, temperature and evaporation rate. The patterns are unaffected by the transfer surface pressure, suggesting that the self-assembly occurs in the presence of solvent via solution thin film instabilities and the resulting structures of PGNPs are frozen upon complete evaporation. Films of neat polystyrene also exhibit similar morphology and transitions in pattern length scales with initial solution concentration as observed in PGNP films. This confirms that the self-assembly of PGNPs is driven by the intrinsic nature of the grafted polymer chains. Gradient dynamics model is employed to study the stability and dynamics of polymer solution thin films by incorporating Flory Huggins free energy and concentration dependent Hamaker constant. Dispersion curves obtained from linear stability analysis of thin film equations show existence of bimodal instability in the film that corresponds to dewetting and decomposition. Phase diagram spanned by concentration and Flory parameter indicate that the thin film instability transits from dewetting to decomposition and then re-enters to dewetting with increase in concentration of the solution. Using the material parameters of the PGNP thin films for linear stability analysis, experimental observations of bimodal length scale of patterns and re-entrant nature are well explained. Nonlinear simulations which are performed to capture the evolution of patterns in the film show that the decomposition progresses through different pathways depending upon the concentration of the solution. This is explained by analyzing the local variation of spinodal parameter (curvature of the free energy per unit area) in the film. The gradient dynamics model is extended to study the stability and dynamics of evaporating solution thin films. Nonlinear simulations demonstrate that the film undergoes evaporative thinning without any significant growth of dewetting or decomposition instability initially and becomes unstable at a certain intermediate thickness where the spinodal parameter of dewetting or decomposition changes the sign. The rupture of the film (dewetting) or the phase segregation (decomposition) occurs explosively and subsequently evaporation progresses till the film attains chemical equilibrium with the ambient vapour phase. Rate of evaporation significantly affect the intermediate thickness at which the patterns emerge and thereby determines the length scale of initial patterns and instability growth rate. Quasi-steady analysis and nonlinear simulations show that the length scales of patterns of dewetting and decomposition decrease with evaporation rate and exhibit a power law behaviour. Thin films in which the solvent quality drops down with confinement due to evaporation are modelled by assuming a simple functional dependence of Flory parameter on mean film thickness. Quasi-steady analysis demonstrates that the dominating instability of such films switches from dewetting to decomposition and then returns to dewetting with increase in the initial concentration of the solution. We note that even though the functional form of Flory parameter with confinement is not exact, it represents the essential nature of the expected variation. We presume that the phenomenon discussed above is quite generic and may manifest itself in many situations where thin films of colloidal solutions undergo a decrease in the solvent quality due to confinement effects resulting in a competition between spinodal dewetting and decomposition instabilities. This will result in a competition and interplay of the different instability scales and by choosing appropriate control parameters novel self-assembled patterns can be created.

The research work presented in this thesis reports for the first time the fabrication of Titanium Niobium complex oxide (TiNb2O7 (TNO)) thin films by employing pulsed laser deposition and their use as the anode material in Li-ion micro batteries. Chapter 1 provides a brief introduction to complex metal oxides as multifunctional materials. In the first section of this chapter, a brief introduction is given about the history of TNO complex oxide material. The complex structure and properties of TNO oxide are also discussed briefly. In the second section, the importance and need of thin film batteries in emerging applications is discussed. Finally, the specific objectives of the current research are outlined in the last section. Chapter 2 gives the details about various experimental methods and characterization tools used in this research. The first part gives a brief overview about the principles and the use of different experimental methods involved in the growth of TNO thin films using pulsed laser deposition. Details, including the laboratory setup designed for PLD growth, also described briefly. In the second part, the different state-of-the-art characterization tools used in this research are described in terms of their principles and their applications such as measuring structural, morphological, chemical and electrochemical properties. Chapter 3 describes the synthesis and characterization of TNO bulk targets prepared via solid state reaction. In the first part, the detailed descriptions of experimental conditions are given. In the second part, the study of as-prepared TNO targets by various characterization tools such as XRD, Raman, SEM and XPS for understanding its structure, morphology and chemical properties are discussed briefly. The emphasis is made on the preparation of a quality target by careful observations. Chapter 4 mainly describes the comprehensive studies carried out on the fabrication and characterization of TNO thin films using PLD. In the first part, the preliminary experimental conditions for the growth of TNO thin films on Pt (200)/TiO2/SiO2/ Si (100) substrates are explained briefly. The importance of primary understanding about target-laser interaction through the structural, morphology changes observed by various characterization tools is discussed. In the latter part of the chapter, the effects of systematic variation of deposition parameters on the properties of the grown TNO thin films are described extensively. Various advanced characterization tools are used to study the changes in as-grown TNO thin films in terms of their structural, morphological and chemical changes by various advanced characterization tools. Chapter 5 is an account of the state-of-the-art characterization tools that are used on the as-grown TNO thin films for determining structural, compositional and elemental information with nanometer spatial resolution. In the first part, the effects of various processing conditions used during FIB are discussed briefly, along with observed results. An attempt has been made to solve the experimental difficulties during FIB for cross sectional sample preparation for HRTEM analysis. Later, the imaging, diffraction and spectroscopic studies carried out on TNO thin films using HRTEM, STEM HAADF, and EDXS elemental mapping are discussed in detail. Finally, obtained results are correlated to the experimental conditions during PLD growth. Chapter 6 focuses on the usage of as-grown TNO thin films as a new anode material in rechargeable Li-ion micro batteries. The various experimental details, battery cell fabrication, etc are described in the first part of the chapter. Then the comprehensive studies are carried out for demonstrating TNO thin films as anode material in micro batteries. Besides this, the basic cyclic voltammogram and charge-discharge tests carried out on a TNO electrode are discussed in detail. The structural, morphological studies are done before and after the electrochemical cell reaction to understand the crystal stability of TNO as an anode electrode. The effects of important experimental parameters on their electrochemical properties are also described briefly. Finally, the observed results are compared with existing literature. Chapter 7 summarizes the present research reported in this thesis and discusses the future research that could give insight into the understanding and optimization of TNO thin films for better usage in battery applications.

No description available.

No description available.

Recently, refractory materials have been proposed as a strong alternative to poly-silicon and aluminum alloys as metallization systems for Very Large Scale Integrated (VLSI) circuits because of their improved performance at smaller Integrated Circuit (IC) feature size and higher interconnect current densities. However, processing and reliability problems associated with the use of refractory materials have limited their widespread acceptance. The hot-wall low pressure chemical vapor deposition (LPCVD) of Molybdenum and Tungsten from their respective hexacarbonyl sources has been studied as a potential remedy to such problems, in addition to providing the potential for higher throughput and better step coverage. Using deposition chemistries based on carbonyl sources, Mo and W deposits have been characterized with respect to their electrical, mechanical, structural, and chemical properties as well as their compatibility with conventional IC processing. Excellent film step coverage and uniformity were obtained by low temperature (300-350 C) deposition at pressures of 400-600 mTorr. As-deposited films were observed to be amorphous, with a resistivity of 250 and 350 microohm-cm for Mo and W respectively. On annealing at high temperatures in a reducing or inert atmosphere, the films crystallize with attendant reduction in resistivity to 9.3 and 12 microohm-cm for Mo and W, respectively. The average grain size also increases as a function of time and temperature to a maximum of 2500-3000 A. The metals and their silicides that are deposited, using silane as silicon source, are integratable to form desired metal-silicide gate contact structures. Thus, use of the low resistivity of the elemental metal coupled with the oxidation resistance of its silicide manifests the quality and economy of the process. MOS capacitors with Mo and W as the gate material have been fabricated on n-type (100) silicon. A work function of 4.7 +/- 0.1 eV was measured by means of MOS capacitance-voltage techniques. The experimental results further indicate that the characteristics of W-gate MOS devices related to the charges in SiO₂ are comparable to those of poly-silicon; while, the resistivity is about two orders of magnitude lower than poly-silicon. It is therefore concluded that hot-wall low pressure chemical vapor deposition of Mo and W from their respective carbonyl sources is a viable technique for the deposition of reliable, high performance refractory metal/silicide contact and interconnect structures on very large scale integrated circuits.

The naturally occurring mineral of Cu2ZnSnS4 (CZTS) is a promising alternative absorber layer for thin film based photovoltaic devices. It has the remarkable advantage that it consists of abundant, inexpensive and non-toxic elements compared to its crystallographically related and highly successful counterparts: the Cu(In,Ga)(S,Se)2 (CIGSSe) and CuIn(S, Se)2 (CISSe) material systems. Therefore, there is real commercial potential for reduced material costs and improved device efficiencies. A two-stage high throughput combinatorial process for the fabrication of Cu-Zn-Sn-S thin film libraries is presented, which consists of either sequentially stacking or co-depositing Cu,Sn and Zn precursor layers by DC magnetron sputtering followed by a sulphurisation process. Sputtering conditions and target-substrate geometry are developed to give compositionally graded Cu-Zn-Sn precursor layers spanning a wide spatial region around the point of stoichiometry. Conversion into Cu-Zn-Sn-S libraries is achieved by thermally evaporating a uniform layer of sulphur directly onto the metal alloy and annealing the sample at 500 °C in a furnace. Effects of the precursor composition on the structural properties of the films prior to the incorporation of sulphur are investigated. The sulphurised libraries are then studied by Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy as a function of composition, to assess the effects on morphology and phase formation. Observations of changes in lattice parameters and crystallinity are clear. The opto-electronic and electrical properties of the CZTS film libraries are measured using photoconductivity and hot point probe techniques, respectively. Changes in the band gap and conductivity type are studied as a function of atomic ratios. Based on high performing compositions, devices have been fabricated with the highest achieving cell at 1.26 %. The observations are discussed in the context of the particular compositions and synthesis conditions, and recommendations are made for further work.