Thesis (Ph. D.)--Virginia Commonwealth University, 2006. / Prepared for: Dept. of Chemistry. Bibliography: leaves 142-146. Also available online via the Internet.

Thesis (M.S.)--Ohio University, June, 1980. / Title from PDF t.p.

Thesis (M.S.)--University of Texas at El Paso, 2009. / Title from title screen. Vita. CD-ROM. Includes bibliographical references. Also available online.

No description available.

The sintering of aluminum nitride in a microwave induced plasma was investigated. The plasma furnace consisted of a quartz tube inserted into a waveguide connected to a 2450 MHz microwave generator. After evacuating the tube to about 1.33 mbar, nitrogen gas was introduced, generating a steady plasma. Processing parameters such as gas pressure, power level, and time were optimized to yield maximum densification of aluminum nitride. Sintering of pure and doped AlN compacts was performed in the nitrogen plasma at temperatures up to 2000 S C. Undoped specimens reached densities of only 81% theoretical, while densities in excess of 95% theoretical were achieved for yttria doped specimens in less than 15 minutes. Microstructural investigations revealed a smaller grain size in the plasma sintered specimens (about 2μ) than are present in conventionally sintered AlN (about 8μ).

No description available.

Thesis (Ph. D.)--University of Toledo, 2009. / Typescript. "Submitted as a partial fulfillment of the requirements for the Doctor of Philosophy Degree in Chemistry." Includes bibliographical references (leaves 123-132).

Thesis (M.S.)--University of Toledo, 2007. / Typescript. "Submitted as partial fulfillment of the requirements for the Master of Science Degree in Chemistry." "A thesis entitled"--at head of title. Bibliography: leaves 99-101.

Five different complexes of aluminum and amino acids have been synthesized and characterized. Reaction between aluminum halides and amino acids that do not contain either a carboxylate or a hydroxy group in the side chain produce complexes of the general formula, [Al(amino acid)_n(halide)_3-n]_m. The most prevalent form of this form of complex is where n = 2, and an example of this in which the halide is replaced by hydroxide ligand has been structurally characterized. The complex for which n = 3 may be obtained by employing a large excess of acid, and that for which n = 1 may be obtained by employing either equimolar conditions or an excess of aluminum halide. Reactions of aluminum halides with amino acids that contain either a carboxylate or hydroxy-containing side chain may result in complexes in which the side-chain is also bound. These proved impossible to characterize fully in the case of aspartic acid. For serine, however, a complex in which the amino acid binds in a chelating fashion through both the carboxylate and hydroxy groups was isolated. It was possible to form complexes when utilizing aluminum alkyls as the metal source. However, these complexes could only be isolated when the reactivity of the species was controlled by the presence of bulky groups. In these cases, the monomeric R_2Al(amino acid) complexes were obtained. Four complexes that contain aluminum-chalcogen bonds were structurally characterized. These included the bulky alkoxide complexes (BHT)_2AIH(OEt_2), (BHT)_3Al(cyclohexanone), and the cubane [(t-amyl)AlS]_4.

Fang, Qianying = 基於掃描探針顯微鏡(SPM)的關於鋁摻雜氧化鋅(ZnO:Al)局域電學性質之研究 / 方倩莹. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2008. / Includes bibliographical references (leaves 97-100). / Text in English; abstracts in English and Chinese. / Fang, Qianying = Ji yu sao miao tan zhen xian wei jing (SPM) de guan yu lü shan za yang hua xin (ZnO:Al) ju yu dian xue xing zhi zhi yan jiu / Fang Qianying. / Chapter I. --- Abstract / Chapter II. --- Acknowledgement / Chapter III. --- Table of contents / Chapter IV. --- List of figures / Chapter V. --- List of tables / Chapter 1 --- Introduction / Chapter 1.1 --- Motivations / Chapter 1.2 --- Outline of thesis / Chapter 2 --- Experimental Conditions and Techniques Used / Chapter 2.1 --- Sample preparation / Chapter 2.1.1 --- Radio frequency magnetic sputtering / Chapter 2.1.2 --- Substrates / Chapter 2.1.3 --- Thermal evaporation / Chapter 2.1.4 --- Thermal annealing / Chapter 2.2 --- Microscopic electrical measurement / Chapter 2.2.1 --- Conductive atomic force microscope (c-AFM) / Chapter 2.2.2 --- Scanning capacitance microscope (SCM) / Chapter 2.2.3 --- Surface Potential (SP) / Chapter 2.3 --- SEM and cathodoluminescence spectroscopy / Chapter 3 --- Calibrations / Chapter 3.1 --- Calibrations of c-AFM measurements / Chapter 3.1.1 --- Reproducible images / Chapter 3.1.2 --- Further statistical analysis / Chapter 3.1.3 --- Sample thickness effect / Chapter 3.1.4 --- Conclusions / Chapter 3.2 --- Calibrations of cathodeluminescence (CL) measurements / Chapter 3.2.1 --- Effect of removing residual magnetic field / Chapter 3.2.2 --- Effect of Faraday cup moving / Chapter 3.2.3 --- Time effect / Chapter 3.2.4 --- Effect of mirror shift / Chapter 3.2.5 --- Effect of electron beam shift / Chapter 3.2.6 --- Conclusions / Chapter 3.3 --- Calibrations of scanning capacitance microscope (SCM) measurements / Chapter 3.3.1 --- SCM images and morphological dependence of as-deposited AlOx/ZnO thin film / Chapter 3.3.2 --- Comparison between as-deposited and e-beam irradiated AlOx/ZnO thin film / Chapter 3.3.3 --- SCM images and morphological dependence of e-beam irradiated AlOx/ZnO thin film / Chapter 3.3.4 --- Conclusions / Chapter 4 --- Experimental Results and Data Analysis / Chapter 4.1 --- Conductive Atomic Force Microscope (c-AFM) / Chapter 4.1.1 --- Effect of scan rate / Chapter 4.1.2 --- Dual images and morphological dependence / Chapter 4.1.3 --- Statistic microscopic current-voltage (I-V) / Chapter 4.1.4 --- Schottky barrier at Pt-ZnO contact / Chapter 4.1.5 --- C-AFM artifact / Chapter 4.2 --- Scanning Capacitance Microscope (SCM) / Chapter 4.2.1 --- Dual images and morphological dependence / Chapter 4.2.2 --- Statistic microscopic SCM data-voltage (dC/dV-V) / Chapter 4.3 --- Surface Potential (SP) / Chapter 5 --- Discussions and Conclusion / Chapter 5.1 --- Mechanism / Chapter 5.2 --- Conclusions / Chapter 5.3 --- Future plan / Chapter 6 --- References