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Made available in DSpace on 2016-12-23T14:33:35Z (GMT). No. of bitstreams: 1 dissertacao.pdf: 2646193 bytes, checksum: 043989a54d6611e19c06eb6bcd7bba69 (MD5) Previous issue date: 2006-06-23 / Neste trabalho é proposta uma estratégia de solução para a construção otimizada de distritos postais. Distrito Postal consiste num conjunto de segmento de eixo de logradouros conectados. Dada uma localidade formada por inúmeros segmentos de logradouros, esse trabalho propõe o arranjamento de subgrupos conexos de segmentos de eixos de logradouros de modo a compor um distrito postal. A estratégia é transformar o sistema de logradouros de uma localidade em um grafo. A partir desse grafo, extrair seus respectivos subgrafos cíclicos que são entendidos como entidades atômicas. Essas entidades atômicas passam por um processo de montagem até comporem um conjunto de distritos postais. A metodologia aqui apresentada divide o trabalho em duas fases distintas: a primeira compreende o processo de obtenção dos subgrafos cíclicos; e a segunda compreende o processo de montagem de distrito postal. O processo de obtenção de subgrafos cíclicos consiste na obtenção da envoltória convexa do grafo e posterior extração dos subgrafos cíclicos tangentes às arestas dessa. Isso de forma sequencial, ou seja, determina-se a primeira envoltória convexa do grafo e extraemse seus respectivos subgrafos tangentes; determina-se a segunda envoltória convexa e extraem-se seus subgrafos, e assim sucessivamente. O trabalho de determinação da envoltória convexa e de extração dos subgrafos cíclicos é feito através de operações da geometria computacional. O processo de construção dos distritos postais se dá através da clusterização dos subgrafos cíclicos, usando como ferramenta a meta-heurística Simulated Annealing. O problema do Carteiro Chinês e Carteiro Chinês Capacitado são formulações suporte para o presente trabalho. O objetivo principal do trabalho é obter, de forma rápida e eficiente o distrito postal otimizado, com menor percurso improdutivo possível, oferecendo agilidade no processo de distribuição domiciliária de objetos postais. / This study proposes a strategia solution for the optimized construction of postal districts. Postal District is a set of segments of publics areas connecteds. Given a locality composed of uncounted segments of publics areas, this study proposes an arrangement of connects subgroups of publics areas with the goal of composing a postal district. The strategy is to transform the system of public areas of a place in a graph and from this graph, to extract their respective cyclical subgraphs that are understood as atomics entities. Those atomics entities are submited by an assembly process until compose a group of postal districts. The methodology here presented divides the study in two different phases: the first one understands the process of obtaining of the cyclical subgraphs; and the second one is understood as the assembly process of postal district The process of obtaining of cyclical subgraph consists in the obtaining of the hull convex of the graph and subsequent extracting up the cyclical subgraphs tangent to edge of that. That is, in a sequential way, in other words, it is determined the first convex hull of the graph and extract up their respective tangent subgraphs; it is determined the second convex hull and extract up their subgraphs and so forth. The study of determination of the convex hull and extracting of the cyclical subgraphs is done through operations of the computational geometry. The process of construction of the postal districts is given through the clustering of the cyclicals subgraphs, using as a tool the meta- heuristic Simulated Annealing. The Chinese Postman's Problem and Capacited Chinese Postman's Problem are formulations support for the present study. The main objective of the study is to obtain, in a fast and efficient way the optimized postal district, with smaller unproductive course possible, offering agility for the process of domiciliary distribution of postal objects.

Les problématiques d’économie d’énergie et de diminution des pertes illustrent les limites du Si dans les composants de puissance actuels. Face à ces besoins, le GaN constitue un bon candidat pour la réalisation de nouveaux composants comme les diodes Schottky de puissance. Ainsi, le GREMAN et STMicroelectronics ont entamé une collaboration visant à réaliser une diode Schottky capable de tenir une tension de – 600 V. Or, de nombreux verrous, tels que la forte sensibilité du GaN à la température et les difficultés d’activation de zones localisées dopé de type p (Mg) subsistent encore. Cependant, nous avons mis en évidence l’efficacité de la cap-layer USG/AlN pour la protection du GaN à haute température. Concernant l’activation des dopants de type p par implantation, nous avons démontré que la réduction du « channeling » du Mg nécessite les conditions d’implantation particulière : un tilt de 10° et une épaisseur d’oxyde (USG) de pré-implantation de 200. Parallèlement, nous avons étudié deux procédés d’activation par recuit RTA, mono- et multicycles, et montré leur utilité pour l’activation du dopant. Néanmoins, ce dernier point reste à approfondir. / Energy saving and reduction of losses issues illustrate the current limits of the Si for power devices. To face these needs, GaN is a good candidate for the realization of new components such as Schottky power diodes. GREMAN and STMicroelectronics have worked together to achieve such diodes with 600 V or more breakdown voltages. However, many mandatory milestones, such as GaN temperature sensitivity and the activation problems of localized p-type doped (Mg) zones, must be faced. In this work, we have demonstrated the efficiency of an USG/AlN cap-layer for the protection of GaN facing high-temperature annealing. Concerning the capability to obtain p-type doping by ion implantation, we demonstrate that the reduction of Mg "channeling" effect is achievable using the following conditions: a tilt of 10° and a screening layer (USG) with a thickness of 200 nm. Meanwhile, we have illustrated two activation processes using RTA: single- and multi-cycles annealing. However, activation, after implantation and annealing, has to be investigated in more details.

A determinação do espectro de relaxação de polímeros utilizando dados de tensão oscilatória de baixa amplitude pode ser calculada assumindo-se que existe uma única função contínua H(λ) capaz de descrever o comportamento viscoelástico linear. O objetivo deste trabalho é determinar esta função ou uma aproximação da mesma utilizando um algoritmo estocástico denominado Simulated Annealing. A estratégia proposta é similar a proposta por Jensen (2002), entretanto, a lista de resfriamento do algoritmo foi modificada, objetivando-se uma maior robustez do referido algoritmo. A ferramenta computacional foi calibrada de forma a estimar com acurácia o espectro de relaxação discreto de outros polímeros. Os métodos de interpolação lagrangeana e de regressão não-linear foram aplicados para obter a função contínua do espectro de relaxação, a partir de um conjunto discreto de dados. Os resultados obtidos para o polietileno linear de baixa densidade (PELBD) comprovaram a eficiência da ferramenta computacional de otimização, sendo extremamente próximos aos fornecidos pelo reômetro AR 2000 (CENPES/PETROBRAS). / The determination of the relaxation spectrum using data from small amplitude oscillatory shear rate was accomplished by assuming that exists a unique continuous function H(λ) which describes linear viscoelasticity. The aim of this work is to determine this function or a close approximation using a computer stochastic algorithm called Simulated Annealing (SA). The strategy is the same proposed by Jensen, but the cooling schedule of SA algorithm was modified, in order to enhance the robustness of the referred algorithm. Besides, a calibration procedure was conducted for estimate accurate relaxation spectrum for other polymers. Lagrangean interpolation and nonlinear regression techniques were applied in order to obtain the continuous function that represent relaxation spectrum, using discrete data. The results generated for low linear density polyethylene (LLDPE) indicate the efficiency of the optimization computational tool, being extremely close to that produced by AR 2000 rheometer (CENPES/PETROBRAS).

A determinação do espectro de relaxação de polímeros utilizando dados de tensão oscilatória de baixa amplitude pode ser calculada assumindo-se que existe uma única função contínua H(λ) capaz de descrever o comportamento viscoelástico linear. O objetivo deste trabalho é determinar esta função ou uma aproximação da mesma utilizando um algoritmo estocástico denominado Simulated Annealing. A estratégia proposta é similar a proposta por Jensen (2002), entretanto, a lista de resfriamento do algoritmo foi modificada, objetivando-se uma maior robustez do referido algoritmo. A ferramenta computacional foi calibrada de forma a estimar com acurácia o espectro de relaxação discreto de outros polímeros. Os métodos de interpolação lagrangeana e de regressão não-linear foram aplicados para obter a função contínua do espectro de relaxação, a partir de um conjunto discreto de dados. Os resultados obtidos para o polietileno linear de baixa densidade (PELBD) comprovaram a eficiência da ferramenta computacional de otimização, sendo extremamente próximos aos fornecidos pelo reômetro AR 2000 (CENPES/PETROBRAS). / The determination of the relaxation spectrum using data from small amplitude oscillatory shear rate was accomplished by assuming that exists a unique continuous function H(λ) which describes linear viscoelasticity. The aim of this work is to determine this function or a close approximation using a computer stochastic algorithm called Simulated Annealing (SA). The strategy is the same proposed by Jensen, but the cooling schedule of SA algorithm was modified, in order to enhance the robustness of the referred algorithm. Besides, a calibration procedure was conducted for estimate accurate relaxation spectrum for other polymers. Lagrangean interpolation and nonlinear regression techniques were applied in order to obtain the continuous function that represent relaxation spectrum, using discrete data. The results generated for low linear density polyethylene (LLDPE) indicate the efficiency of the optimization computational tool, being extremely close to that produced by AR 2000 rheometer (CENPES/PETROBRAS).

Made available in DSpace on 2014-07-29T15:08:20Z (GMT). No. of bitstreams: 1 dissertacao geraldo valeriano eec.pdf: 1215973 bytes, checksum: 4ceb98a1d5250ad33d16a8997882d277 (MD5) Previous issue date: 2009-06-29 / This work presents two methods to solve the problem of Electric Distribution Networks (EDN) with geographical and power restrictions. The high cost of the project involving EDN together with lack of efficient methods when working with real applications justifies the development of this research. Taking into account concepts of heuristic and metaheuristic two methods are proposed: The first is based on the Hill-Climbing (HC) heuristic and the second is based on the Simulated Annealing (SA) metaheuristic. The possible paths are provided by the Delaunay triangulation and it is considered the natural and socio-political obstacles of the site where you want to locate a new energy network. The dimension of the EDN feeders is calculated using the power flow results from the Forward-Backward method. The initial solution is found using an intelligent method. Then the SA metaheuristic and/or HC heuristic are used providing a good solution for a new EDN in comparison with the heuristic used to find the initial solution. A comparison is also made between the two proposed methods / RESUMO Neste trabalho são apresentados dois métodos para resolver o problema de planejamento de rede de distribuição de energia elétrica (RDEE) com restrições geográficas e elétricas. O custo elevado que envolve o projeto de RDEE unido à escassez de métodos eficientes quando se trata de aplicações reais justificam o desenvolvimento desta pesquisa. Considerando os conceitos de heurística e metaheurística são propostos dois métodos: o primeiro é baseado na heurística Hill-Climbing (HC) e o segundo é baseado na metaheurística Simulated Annealing (SA). Os possíveis caminhos são fornecidos pela triangulação de Delaunay e são considerados os obstáculos naturais e políticosociais (restrições geográficas) do local onde se deseja implantar a nova rede de energia elétrica. O dimensionamento dos alimentadores da RDEE é feito utilizando-se do fluxo de potência calculado pelo método Backward-Forward. A solução inicial é encontrada utilizando-se um método inteligente. A metaheurística SA e/ou a heurística HC são então utilizadas, fornecendo uma boa solução para uma nova RDEE, em relação à heurística utilizada para encontrar a solução inicial. Também é realizada uma comparação entre os dois métodos propostos.

Orientadores: Sandro Guedes de Oliveira, Julio Cesar Hadler Neto / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin / Made available in DSpace on 2018-08-21T04:43:57Z (GMT). No. of bitstreams: 1 Vellame_IgorAlencar_D.pdf: 6307121 bytes, checksum: 509c7cc3c5c11f238463340fa191af50 (MD5) Previous issue date: 2012 / Resumo: O presente trabalho pode ser inserido na grande área de estudo da interação da radiação com sólidos. Ele tem como principal objetivo entender a cinética de reconstituição dos danos causados por irradiação com íons ( traço latente) na apatita e e realizado através do estudo de annealing em traços atacados. O que se denomina traço latente e a trilha de danos causada pela desaceleração do íon, enquanto este atravessa a matéria. Estes traços latentes são meta-estaveis em relação ao tratamento térmico e apresentam uma taxa de reação a dissolução muito mais elevada que o mineral não danificado. Assim, para compreender as alterações causadas pelos tratamentos térmicos e necessária entender como o processo de ataque químico ocorre. Um cristal natural de apatita foi cortado em algumas orientações cristalográficas (principalmente basal e prismática) e estas amostras foram montadas em resina para obtenção de uma superfície plana com técnicas de polimento. Grande parte destas amostras foi irradiada com nêutrons (para induzir a fissão do isótopo 235 U com fluências de nêutrons térmicos próximas a 3xl015 cm-2 ) ou com íons pesados (152Sm e 238 U com fluências pr6ximas a lx106 cm-2 e 5x 1011 cm-2). Utilizando a espectroscopia no infra-vermelho, foi possível estimar o valor do diâmetro do traço latente. Os valores encontrados (~8-9 nm) são coerentes com diversas medidas utilizando outras técnicas presentes na literatura. As taxas de dissolução da superfície do material pelo acido nítrico em diferentes condições (concentração e temperatura) foram medidas pelo método da máscara com êxito. Observou-se uma inversão na razão entre as taxas para as diferentes orientações conforme a concentração do reagente aumentada. A distribuição de comprimentos projetados também foi estudada para estimar a eficiência de observação e revelação do ataque químico (razão entre quantos traços são efetivamente contados e quantos traços são gerados). A metodologia presente na literatura para o calculo da distribuição de comprimentos projetados foi revista e novas estimativas foram feitas utilizando métodos numéricos com intuito de estimar os comprimentos e desvios dos fragmentos de fissão leve e pesado na apatita. Foi observada uma deficiência intrínseca na medida do comprimento projetado, mas esta sozinha não e capaz de explicar o deficit de alcance observado para as irradiações com íons. Duas metodologias para o ca1culo do conteúdo de urânio nas amostras são apresentadas e os resultados da comparação com valores obtidos par outras técnicas independentes são satisfatórios. Isto fortalece o método dos traços de fissão como uma técnica absoluta para a dosimetria de nêutrons. Par fim, para o estudo do tratamento térmico, dais conjuntos de dados pana traços de íons foram preparados: um a partir da diminuição do comprimento projetado; e outro com o estudo da variação na abertura superficial de traços de íons incidentes perpendicularmente. Foi possível correlacionar as reduções da abertura superficial e do comprimento através de uma lei de potencia. Aparentemente, a abertura superficial parece ser um indicador da quantidade de defeitos e isto possibilita vincular melhor a cinética do tratamento térmico. Algumas extrapolações geológicas também foram realizadas e o razoável acordo com os dados geológicos demonstra que o processo e universal e que traços de íons podem ser usados como ferramenta para o estudo do tratamento térmico em traços atacados / Abstract: This work can be inserted in the great study area of radiation interactions with solids. It has as the main goal the understanding of the reconstitution of damage caused by ion irradiation (latent track) in apatite and it is investigated through the annealing of chemically etched tracks. A latent track is the damage trail caused by the ion deceleration in matter. These tracks are thermally meta-stable and they present an enhanced dissolution rate when compared to the non-damaged bulk mineral. Thus, in order to understand t he alterations caused by a thermal treatment, it is necessary to understand how does the chemical etching occur. A natural apatite crystal was cut in some crystallographic orientations (mainly basal and prismatic) and these samples were mounted in epoxy resin in order to obtain a fiat surface with polishing techniques. Great part of these samples were irradiated with thermal neutrons (inducing the 235 U fission with fiuence close to 3x 1015 cm-2 ) or heavy ions e 52Sm and 238U with nominal fluences of lx106 cm-2 and 5x1011 cm-2 ). Applying infra-red spectroscopy, it was possible to estimate the values of ion latent track diameters. The founded values (~8-9 nm) are coherent with several measurements employing other techniques presented in the literature. The mineral surface dissolution rates by nitric acid were successfully measured in different conditions ( etchant concentration and temperature) with the mask method. As the etchant concentration increases, an inversion in the dissolution rates ratio between different orientations was observed. The projected length distribution was also studied to estimate the revelation/observation efficiency (ratio between how many tracks were effectively counted and how many are expected). The methodology presented in the literature for the calculation of the expected projected length distribution was revised and new estimates were made with numerical methods. These numerical methods were employed to estimate the length and standard deviation of light and heavy fission fragments in apatite. An intrinsic deficit in the projected length measurement was observed. However, it alone could not explain the huge range deficit observed for external source irradiation in apatite. Two methodologies for the calculation of uranium content in t he samples were proposed. The comparison of the results with other values found from independent techniques was satisfactory. This strengthen the fission track method as an absolute technique for neutron dosimeter. Finally, two data sets for ion track thermal annealing study were prepared:! one from the shortening of projected length; and the other from the variation of perpendicular ion track etch-pit aperture. It was possible to correlate the aperture and length reduction with a power law. Apparently, the etch-pit aperture seems to be an indicator of the amount of defects which remains in the latent track after the thermal treatment. This enables one to better constrain the thermal annealing kinetic. Some geological extrapolation were also predicted. The reasonable agreement with geological data demonstrates that the process is universal and that ion tracks can be used as proxies for the thermal annealing behavior study / Doutorado / Física / Doutor em Ciências

Ce travail avait pour objectif de réaliser des couches minces de Zno co-dopées Cobalt et Indium en vue de la réalisation de cellules photovoltaïques. Pour la fabrication des couches minces, nous avons choisi la méthode de pulvérisation cathodique en radio fréquence. Cette méthode nous permet d'obtenir des couches ayant différentes propriétés qui dépendent des paramètres de dépôt. Les couches minces de CIZO obtenus sont recuites sous N2 et H2 pour la série 1 et O2 pour la série 2. Dans la première partie de ce travail, nous avons entrepris une étude des propriétés morphologiques, vibrationnelles et optiques.Dans la deuxième partie de ce travail, nous avons étudié l'effet de l'épaisseur et l'effet de recuit sous azote pour améliorer les différentes propriétés (structurales, morphologiques, optiques et électriques) de nos échantillons. Dans la troisième partie de ce travail, nous avons étudié l'influence de temps de recuite sur les différentes propriétés (structurales, morphologiques, optiques et électriques) de nos échantillons. / This work has a purpose to make thin layers of Zno co-dopees cobalt and indium for the production of photovoltaic cells. For the manufacture of thin layers, we have chosen the method of magnatron sputtring. This method allows we obtain layers having different properties which depend on parameters of deposition. Thick layers of cizo obtained are received inN2 and H2 for series 1 and O2 for series 2. In the first part of this work, we have undertaken a study of the morphological, vibrational and optical properties. In the second part of this work, we have experienced the effect of thickness and the effect of anneling on the different properties (structural, morphological, optical, and electrical) of our samples. In the third part of this work, we have investigated the influence of annealing time on the different properties (structural, morphological, optical and electrical) of our samples.

When creating a muffler to be installed on a noise generating machine, the design parameters as well as the placements of sound attenuating elements has to be optimized in order to minimize the sound coming out of the equipage. This is exemplified in a small project task for students of a basic course in optimization at KTH. The task is however flawed, since both the way in which the optimization problem is formed is overly simplistic and the algorithm used to solve the problem, fmincon, does not cope well with the mathematical complexity of the model, meaning it gets stuck in a local optimum that is not a global optimum. This thesis is about investigating how to solve both of these problems. The model is modified to combine several frequencies and adjusting them to the sensitivity to different frequencies in the human ear. By doing this, the objective is changed from the previous way of maximizing Dynamic Insertion Loss Dilfor a specific frequency to minimize the total perceived sound level LA.  The model is based on the modular design of TMM from four-pole theory. This divides the muffler into separate parts, with the sound attenuating elements being mathematically defined only by what T matrix it has. The element types to choose from are the Expansion Chamber, the Quarter Wave Resonator and the Helmholtz Resonator. The global optimization methods to choose from are Global Search, MultiStart, Genetic Algorithm, Pattern Search and Simulated Annealing. By combining the different types of sound attenuating elements in every way and solving each case with every global optimization method, the best combination to implement to the model is chosen. The choice is two Quarter Wave Resonators being solved by MultiStart, which provides satisfactory results. Further analysis is done to ensure the robustness of chosen implementation, which does not reveal any significant flaws. The purpose of this thesis is fulfilled. / När man skapar en ljuddämpare som ska installeras på en ljud-genererande maskin bör designparametrarna samt placeringarna av ljuddämpande element optimeras för att minimera ljudet som kommer ut ur ekipaget. Detta exemplifieras i en liten projektuppgift för studenter till en grundkurs i optimering på KTH. Uppgiften är dock bristfällig, eftersom både det sätt som optimeringsproblemet är utformat är alltför förenklat och den algoritm som används för att lösa problemet, fmincon, inte klarar av modellens matematiska komplexitet bra, vilket menas med att den fastnar i ett lokalt optimum som inte är ett globalt optimum. Detta examensarbete handlar om att undersöka hur man kan lösa båda dessa problem. Modellen är modifierad för att kombinera flera frekvenser och anpassa dem till känsligheten för olika frekvenser i det mänskliga örat. Genom att göra detta är målet ändrat från det tidigare sättet att maximera den dynamiska insatsisoleringen DIL för en specifik frekvens till att minimera den totala upplevda ljudnivån LA. Modellen bygger på den modulära designen av TMM från 4-polsteori. Detta delar upp ljuddämparen i separata delar, med ljuddämpande element som matematiskt endast definieras av vilken T matris de har. De elementtyper att välja mellan är expansionskammare, kvartsvågsresonator och Helmholtzresonator. De globala optimeringsmetoder att välja mellan är Global Search, MultiStart, Genetic Algorithm, Pattern Search och Simulated Annealing. Genom att kombinera de olika typerna av ljuddämpande element på alla sätt och lösa varje fall med varje global optimeringsmetod, blir den bästa kombinationen vald och implementerad i modellen. Valet är två kvartsvågsresonatorer som löses genom MultiStart, vilket ger tillfredsställande resultat. Ytterligare analyser görs för att säkerställa robustheten av den valda implementationen, som inte avslöjar några väsentliga brister. Syftet med detta examensarbete är uppfyllt.

Within the framework of this thesis, the influence of non equilibrium post growth thermal treatments of ion implanted and epitaxially grown Ge1-xSnx and Si1-x-yGeySnx layers for nano and optoelectronic devices has been investigated. The main focus has been placed on the study and development of thermal treatment conditions to improve the as grown layer quality and the fabrication of Ge1-xSnx and Si1-x-yGeySnx on SOI JNTs. In addition, through layer characterization, exhaustive analysis has provided deep insight into key material properties and the alloy´s response to the thermal treatment. For instance, (i) the conversion of as grown in plane compressive strained Ge1-xSnx into in-plane tensile strained Ge1-xSnx after PLA that is required for high mobility n-type transistors and (ii) the evolution of monovacancies to larger vacancy clusters due to post growth thermal treatments. Moreover, the adaption of CMOS compatible fabrication approaches to the novel Ge1-xSnx and Si1-x-yGeySnx alloys allowed the successful fabrication of first lateral n-type JNTs on SOI with remarkable Ion/Ioff ratios of up to 10^8 to benchmark the alloy performance.:I. Table of contents II. Abstract III. Kurzfassung (Abstract in German) IV. List of Abbreviations V. List of Symbols VI. List of Figures VII. List of Tables 1 Introduction 2 Fabrication and properties of Ge1 xSnx and Si1 x yGeySnx alloys 2.1 Alloy formation 2.2 Strain and defects 2.3 Electrical and optical properties 2.3.1 Band structure of strain relaxed alloys 2.3.2 Band structure of strained alloys 2.3.3 Doping influenced properties 2.3.4 Electrical properties 2.4 Thermal treatments 2.4.1 Rapid thermal annealing 2.4.2 Flash lamp annealing 2.4.3 Pulsed laser annealing 2.5 Summary 3 Experimental setups 3.1 Molecular beam epitaxy (MBE) 3.2 Ion beam implantation 3.3 Pulsed laser annealing (PLA) 3.4 Flash lamp annealing (FLA) 3.5 Micro Raman spectroscopy 3.6 Rutherford backscattering spectrometry (RBS) 3.7 X ray diffraction (XRD) 3.8 Secondary ion mass spectrometry (SIMS) 3.9 Hall effect measurement 3.10 Transmission electron microscopy (TEM) 3.11 Positron annihilation spectroscopy (PAS) 3.12 Cleanroom 4 Post growth thermal treatments of Ge1-xSnx alloys 4.1 Post growth pulsed laser annealing 4.1.1 Material fabrication and PLA annealing 4.1.2 Microstructural investigation 4.1.3 Strain relaxation and optical properties 4.1.4 Electrical properties and defect analysis 4.1.5 Strain relaxed Ge1-xSnx as virtual substrates 4.1.6 Conclusion 4.2 Post growth flash lamp annealing 4.2.1 Material fabrication and r FLA annealing 4.2.2 Alloy composition and strain analysis 4.2.3 Defect investigation 4.2.4 Dopant distribution and activation 4.2.5 Conclusion 5 Fabrication of Ge1-xSnx and Si1-x-yGeySnx alloys on SOI 5.1 Alloy fabrication with ion beam implantation and FLA 5.1.1 Si1-x-yGeySnx formation via implantation and FLA 5.1.2 Si1-x-yGeySnx on SOI fabrication via implantation and FLA 5.1.3 Recrystallization of Si1-x-yGeySnx on SOI by FLA 5.1.4 P and Ga doping of Si1 x yGeySnxOI via implantation and FLA 5.1.5 Conclusion 5.2 MBE and post growth thermal treatments of Ge1-xSnx and Si1-x-yGeySnx on SOI 5.2.1 MBE growth of Ge0.94Sn0.06 and Si0.14Ge0.80Sn0.06 on SOI 5.2.2 Microstructure of as grown Ge0.94Sn0.06 and Si0.14Ge0.80Sn0.06 5.2.3 Microstructure after post growth thermal treatments 5.2.4 Dopant concentration and distribution 5.2.5 Conclusion 6 Ge1-xSnx and Si1-x-yGeySnx on SOI junctionless transistors 6.1 Operation principle of n type JLFETs 6.2 Fabrication of n-type JNTs 6.3 Electrical characterization 6.3.1 JNT performance evolution during processing 6.3.2 JNT performance in dependence on post growth PLA 6.3.3 Gate configuration of Ge1-xSnx JNTs 6.3.4 Influence of post fabrication FLA on Ge1-xSnx JNTs 6.4 Conclusion 7 Conclusion and future prospects References 8 Appendix 8.1 Sample list and fabrication details for Chapter 4 8.2 Extended RBS information 8.3 Extended TEM analysis for section 4.1.2 8.4 Strain calculation based on (224) RSM 8.5 Strain calculation by µ Raman 8.6 Analysis of Hall effect measurements 8.7 VEPFit and ATSUP simulations 8.8 Strain relaxation of Ge0.89Sn0.11 for section 4.1.5 8.9 COMSOL simulation of FLA temperature 8.10 ECV measurement setup 8.11 Datasheet of the SOI wafers 8.12 Sample list of Chapter 5 8.13 Calculation of the ion beam implantation parameter by SRIM 8.14 RBS simulation results for section 5.1 8.15 GI XRD and (224) XRD RSM results for section 5.1 8.16 SIMS limitations for section 5.1.4 8.17 RBS of Ge1-xSnx on SOI for section 5.2.3 8.18 Fit procedure for SOI RSM peak positions 8.19 Supporting µ Raman results for section 5.2.3 8.20 Process details for n-JNT fabrication 8.21 Flat band voltage VFB and on current Ion of JNTs 8.22 Ioff, Imax, Ion/Ioff and Imax/Ioff ratio of JNTs 8.23 Subthreshold swing SS calculation of JNTs 8.24 Threshold voltage Vth of JNTs 187 8.25 Gate configuration of Si1-x-yGeySnx JNTs 8.26 n-type transistors compared in Chapter 7 8.27 Annealing setup description