Cette thèse se propose d’étudier les procédés de dopage et de recuit laser comme outils permettant la réalisation de cellules photovoltaïques au silicium cristallin. Des émetteurs dopés ou recuits par laser sont tout d’abord réalisés à l’aide de trois lasers et de différentes sources dopantes. Les lasers utilisés sont un laser vert nanoseconde, un laser excimère et un laser ultraviolet à haute cadence. Comme sources dopantes nous avons utilisé le verre de phosphore, des couches de nitrures de silicium dopées au bore ou au phosphore, ou encore des implantations ioniques de bore ou de phosphore. Des dopages très efficaces sont obtenus avec chaque couple laser/source dopante. En particulier, de faibles valeurs de résistances carrées et de densités de courant de saturation sont obtenues. Ces procédés laser sont ensuite appliqués à la réalisation de cellules à émetteur sélectif et à champ arrière au bore. Les cellules à émetteur sélectif dopé par laser (en utilisant le verre de phosphore comme source dopante) atteignent un rendement de 18,3 %, ce qui représente un gain total de 0,6 %abs comparé aux cellules standard à émetteur homogène. Les cellules à champ arrière au bore recuit par laser (à partir d’une implantation ionique de bore) montrent quant à elles un gain de 0,3 %abs par rapport aux cellules à champ arrière à l’aluminium, offrant ainsi un rendement de 16,7 %. / This study aims at investigating laser doping and laser annealing for crystalline silicon solar cells processing. Laser-processed emitters are firstly realized using three lasers and different dopants sources. The lasers are a nanosecond green laser, an excimer laser and a high-frequency ultraviolet laser. As dopants sources we used either phosphosilicate glass, phosphorus and boron-doped silicon nitrides, or phosphorus and boron ion implantation. Efficient phosphorus and boron doping are obtained using any of these laser/sources couple. In particular, low sheet resistances and low emitter saturation current densities are obtained. These laser processes are then applied to selective emitter and boron back-surface-field solar cells. Laser-doped selective emitter solar cells (using phosphosilicate glass as a dopants source) reach 18.3 % efficiency. This represents an overall gain of 0.6 %abs when compared to standard homogeneous emitter. On the other hand, laserannealed boron back-surface-field solar cells (using implanted boron as a dopants source) feature an overall gain of 0.3 %abs when compared to standard aluminium back-surface-field solar cells, thus yielding an efficiency of 16.7 %.

O carbeto de silício (SiC) apresenta várias propriedades extremamente interessantes para a fabricação de dispositivos eletrônicos submetidos a condições extremas como alta temperatura (300 a 600 °C), alta frequência e alta potência. Além disso, é o único semicondutor composto que, reagindo com o oxigênio, forma um óxido isolante estável, o SiO2. No entanto, as propriedades elétricas de estruturas de SiO2/SiC são degradadas pela alta concentração de estados eletricamente ativos na interface dielétrico/semicondutor. Tal característica representa uma barreira para a fabricação de dispositivos baseados nesse material. Nesta tese foram comparadas e analisadas as propriedades de estruturas SiO2/4H-SiC obtidas por diferentes processos de oxidação térmica. As estruturas resultantes foram caracterizadas por medidas de corrente-tensão, capacitância-tensão e condutância ac de alta frequência, espectroscopia de fotoelétrons induzidos por raios-X, análise por reação nuclear e microscopia de força atômica. O uso dessas técnicas analíticas visou a correlacionar o comportamento elétrico das estruturas obtidas com suas propriedades físico-químicas como, por exemplo, composição e estrutura química do óxido formado. Os resultados evidenciam diferenças específicas entre os ambientes de oxidação e temperaturas aos quais as amostras foram submetidas, com uma forte distinção entre 4H-SiC tipo-n e tipo-p. Em geral, amostras do substrato tipo-n apresentaram menores quantidades de defeitos na interface SiO2/SiC em comparação com as do tipo-p. Foram identificados comportamentos relacionados a defeitos no óxido, próximos à interface, responsáveis pela captura de portadores majoritários provenientes do semicondutor. Ficou evidente que alguns ambientes e temperaturas de oxidação beneficiam a interface em detrimento da qualidade do filme de óxido e vice-versa. Uma atmosfera de oxidação alternativa, utilizando H2O2 como agente oxidante, foi proposta. Tal processo mostrou-se eficaz na redução da quantidade de estados eletricamente ativos na interface em estruturas tipo-n através da conversão de compostos carbonados em SiO2 no filme dielétrico formado. / Silicon carbide (SiC) presents many advantageous properties for electronic devices designed to work under extreme conditions such as high-temperature (300 ~ 600 °C), high-frequency, and high-power. In addition, the formation of an insulating oxide layer (SiO2) by thermal oxidation is an attractive property for the microelectronics industry. Nevertheless, large densities of interface states at the SiO2/SiC interface degrade electrical properties of the resulting structure. Such states are responsible for undesirable effects which hamper the development of SiC-based devices. In this thesis, the properties of SiO2/4H-SiC structures obtained by distinct oxidation processes where analyzed and compared. The resulting structures where characterized by currentvoltage, high-frequency capacitance-voltage and ac conductance, X-ray photoelectron spectroscopy, nuclear reaction analysis, and atomic force microscopy. Such techniques were employed in order to correlate electrical and physico-chemical properties of the formed structures like composition and chemical bonding of the oxide layer. Results evidence differences among samples prepared under several oxidation atmospheres and temperatures, with a strong distinction among n- and p-type 4H-SiC. Overall, p-type samples presented larger values of interface states densities in comparison with their ntype counterparts. Near-interface traps in the oxide layer, responsible for capture of majority carriers from the semiconductor substrate, were identified. We could evidence that some oxidation conditions improve the bulk properties of the oxide layer, at the same time that they degrade the SiO2/SiC interface quality, and vice versa. An alternative oxidation process using H2O2 as oxidizing agent was proposed. Such process has shown to reduce the amount of electrically active defects at the interface in n-type samples by converting carbonaceous compounds in SiO2 in the formed dielectric layer.

Un-doped, Er3+ doped (TiO2:Er3+) as well as Er3+/Yb3+ co-doped (TiO2:Er3+/Yb3+) nanocrystals with different concentrations of RE3+ (Er3+, Yb3+) were successfully synthesized using the sol-gel method. The powder X-ray diffraction (XRD) spectra revealed that all undoped and doped samples remained in anatase after annealing at 400°C. The presence of RE3+ ions in the TiO2 host lattice was confirmed by conducting elemental mapping on the samples using Scanning electron microscope (SEM) equipped with energy dispersive X-ray spectrometer (EDX), which was in agreement with X-ray photoelectron spectroscopy (XPS) results. Transmission electron microscope (TEM) images approximated particle sizes of the samples to be between 1.5 – 3.5 nm in diameter and this compares well with XRD analyses. Phonon quantification in TiO2 was achieved using Fourier transform infrared (FT-IR) spectroscopy. Optical bandgap from Ultraviolet/Visible/Near-Infrared was extrapolated from Kubelka-Munk relation and the narrowing of the bandgap for the doped samples as compared to the undoped sample was observed. The photoluminescence PL study of the samples revealed two emission peaks attributed to direct band-gap and defect-related emissions. A laser beam with 980 nm wavelength was used to irradiate the samples, and the displayed emission lines of the TiO2: Er3+ in the visible region of the electromagnetic spectrum confirmed up-conversion luminescence. Enhancement of up-conversion luminescence intensity due to Yb3+ co-doping was observed, indicating an efficient energy transfer process from the sensitizer Yb3+ to the activator Er3+. / Physics / M. Sc. (Physics)

Neste trabalho foi otimizado o processo de crescimento de nanofios de ZnO pelo método vapor-líquido-sólido. As nanoestruturas obtidas foram caracterizadas quanto às suas propriedades ópticas através de medidas de fotoluminescência (PL) e modificações foram realizadas através de recozimentos em vácuo e atmosferas de Ar, O2 e forming gas (FG) como também de irradiação por feixes de íons de He+ e Au+. Além disso, foi estudada a influência do substrato tanto na morfologia dos nanofios quanto nas propriedades ópticas. Também foi depositado através de sputtering um filme de SiO2 sobre os nanofios de ZnO e então submetidos a recozimento em atmosfera de Ar. Quanto à sua morfologia, os nanofios foram caracterizados através das técnicas de microscopia eletrônica de varredura (MEV) e de transmissão (TEM). Como crescidos, os nanofios possuem diâmetro aproximado de 40 nm e polaridade Zn quando crescidos em safira c-plane. Os nanofios recozidos em diferentes atmosferas apresentaram redução da intensidade de PL na banda do visível quando submetidos aos recozimentos em vácuo, Ar e FG. Já quando recozido em atmosfera oxidante, a intensidade de emissão no visível apresentou um aumento. Nos nanofios irradiados foi observado que, após a irradiação com íons de He+, não houve mudanças na estrutura cristalina e de superfície dos nanofios. Entretanto após a irradiação/implantação com íons de Au+ a rugosidade dos nanofios apresentou alterações. Foram obtidos os espectros de PL à temperatura ambiente das nanoestruturas irradiadas e observa-se que, após a irradiação, a banda de defeitos de todas as amostras apresenta redução quando comparada com a amostra como crescida. O espectro de PL obtido das amostras de nanofios de ZnO após a deposição de SiO2 apresenta uma redução da banda do visível quando comparado com a amostra como crescida, além de um aumento na emissão no pico do UV. Após recozimentos em atmosfera de Ar, observou-se que a banda do UV aumenta até a temperatura de 700 °C, sendo reduzida para a temperatura de 900 °C. Já o pico na região do visível tem sua intensidade aumentada com o aumento da temperatura de recozimento. Através de imagens de TEM, observou-se a formação de uma estrutura do tipo core-shell, sendo o core composto pelo nanofios de ZnO e o shell pelo filme de SiO2. As nanoestruturas de ZnO crescidas em diferentes substratos revelaram que, além da morfologia ser diferente, alguns substratos favorecem a formação de determinados tipos de defeitos pontuais, mesmo que o crescimento seja dado sob as mesmas condições e simultaneamente. Foi iniciada, também, a construção de um dispositivo para medidas elétricas em nanofios de ZnO. Medidas preliminares foram realizadas com nanofios antes e após irradiação de íons de He+ e foi observado um aumento na condutividade da nanoestrutura. / In this work the growth process of ZnO nanowires by vapor-liquid-solid method was optimized. The obtained nanostructures were characterized by photoluminescence measurements (PL) and modifications were performed by annealing in vaccum and Ar, O2 and forming gas (FG) atmospheres as well He+ and Au+ ions irradiation. Furthermore, the influences of the substrate in morphology on the optical properties of nanowires were studied. Through sputtering was deposited a SiO2 film over ZnO nanowires and then submitted to Ar annealing. Regarning the morphology, nanowires were characterized by scanning (SEM) and transmission (TEM) electron microscopy. The as grown, nanowires have about 40 nm diameter and Zn polarity when grown on sapphire c-plane. The nanowires annealed in different atmospheres showed reduction in PL intensity in visible band emission when submitted to vaccum, Ar and FG annealing. When they were annealed in O2 atmosphere, the visible band emission increased compared to the sample as grown. In irradiated nanowires was observed that, after He+ ion irradiation, no changes were observed in the crystalline structure and surface of nanowires. However, after Au+ ions irradiation/implantation, the surface roughness of nanowires has been changed. PL spectra at room temperature of irradiated nanostructures were obtained and it was observed that, after irradiation, the defect band emission of all samples shows reduction of intensity when compared to as grown sample. PL spectra for ZnO nanowires after SiO2 deposition shows a reduction of visible band emission when compared to as grown sample, besides an increase in UV band emission. After annealing in Ar atmosphere, it was observed that UV band emission increases until 700 °C temperature, being reduced for 900 °C annealing temperature. In respect to visible peak, the intensity has increased with temperature annealing increasing. Through TEM images, it was observed a core-shell structure formation, with ZnO nanowires as core and SiO2 film as shell. ZnO nanostructures grown in different substrates reveals that, besides being morphologically different, some substrates favors the formation of certain types of point defects, even if growth is given under the same conditions and at the same time. It was started the built of a device to electrical measurements in ZnO nanowires. Prelimiary measurements were performed with nanowires before and after He+ ion irradiation and it were observed an increasing in nanostructure conductivity.

SpiNNaker is an unconventional supercomputer architecture designed to simulate up to one billion biologically realistic neurons in real-time. To achieve this goal, SpiNNaker employs a novel network architecture which poses a number of practical problems in scaling up from desktop prototypes to machine room filling installations. SpiNNaker's hexagonal torus network topology has received mostly theoretical treatment in the literature. This thesis tackles some of the challenges encountered when building `real-world' systems. Firstly, a scheme is devised for physically laying out hexagonal torus topologies in machine rooms which avoids long cables; this is demonstrated on a half-million core SpiNNaker prototype. Secondly, to improve the performance of existing routing algorithms, a more efficient process is proposed for finding (logically) short paths through hexagonal torus topologies. This is complemented by a formula which provides routing algorithms with greater flexibility when finding paths, potentially resulting in a more balanced network utilisation. The scale of SpiNNaker's network and the models intended for it also present their own challenges. Placement and routing algorithms are developed which assign processes to nodes and generate paths through SpiNNaker's network. These algorithms minimise congestion and tolerate network faults. The proposed placement algorithm is inspired by techniques used in chip design and is shown to enable larger applications to run on SpiNNaker than the previous state-of-the-art. Likewise the routing algorithm developed is able to tolerate network faults, inevitably present in large-scale systems, with little performance overhead.

O carbeto de silício (SiC) apresenta várias propriedades extremamente interessantes para a fabricação de dispositivos eletrônicos submetidos a condições extremas como alta temperatura (300 a 600 °C), alta frequência e alta potência. Além disso, é o único semicondutor composto que, reagindo com o oxigênio, forma um óxido isolante estável, o SiO2. No entanto, as propriedades elétricas de estruturas de SiO2/SiC são degradadas pela alta concentração de estados eletricamente ativos na interface dielétrico/semicondutor. Tal característica representa uma barreira para a fabricação de dispositivos baseados nesse material. Nesta tese foram comparadas e analisadas as propriedades de estruturas SiO2/4H-SiC obtidas por diferentes processos de oxidação térmica. As estruturas resultantes foram caracterizadas por medidas de corrente-tensão, capacitância-tensão e condutância ac de alta frequência, espectroscopia de fotoelétrons induzidos por raios-X, análise por reação nuclear e microscopia de força atômica. O uso dessas técnicas analíticas visou a correlacionar o comportamento elétrico das estruturas obtidas com suas propriedades físico-químicas como, por exemplo, composição e estrutura química do óxido formado. Os resultados evidenciam diferenças específicas entre os ambientes de oxidação e temperaturas aos quais as amostras foram submetidas, com uma forte distinção entre 4H-SiC tipo-n e tipo-p. Em geral, amostras do substrato tipo-n apresentaram menores quantidades de defeitos na interface SiO2/SiC em comparação com as do tipo-p. Foram identificados comportamentos relacionados a defeitos no óxido, próximos à interface, responsáveis pela captura de portadores majoritários provenientes do semicondutor. Ficou evidente que alguns ambientes e temperaturas de oxidação beneficiam a interface em detrimento da qualidade do filme de óxido e vice-versa. Uma atmosfera de oxidação alternativa, utilizando H2O2 como agente oxidante, foi proposta. Tal processo mostrou-se eficaz na redução da quantidade de estados eletricamente ativos na interface em estruturas tipo-n através da conversão de compostos carbonados em SiO2 no filme dielétrico formado. / Silicon carbide (SiC) presents many advantageous properties for electronic devices designed to work under extreme conditions such as high-temperature (300 ~ 600 °C), high-frequency, and high-power. In addition, the formation of an insulating oxide layer (SiO2) by thermal oxidation is an attractive property for the microelectronics industry. Nevertheless, large densities of interface states at the SiO2/SiC interface degrade electrical properties of the resulting structure. Such states are responsible for undesirable effects which hamper the development of SiC-based devices. In this thesis, the properties of SiO2/4H-SiC structures obtained by distinct oxidation processes where analyzed and compared. The resulting structures where characterized by currentvoltage, high-frequency capacitance-voltage and ac conductance, X-ray photoelectron spectroscopy, nuclear reaction analysis, and atomic force microscopy. Such techniques were employed in order to correlate electrical and physico-chemical properties of the formed structures like composition and chemical bonding of the oxide layer. Results evidence differences among samples prepared under several oxidation atmospheres and temperatures, with a strong distinction among n- and p-type 4H-SiC. Overall, p-type samples presented larger values of interface states densities in comparison with their ntype counterparts. Near-interface traps in the oxide layer, responsible for capture of majority carriers from the semiconductor substrate, were identified. We could evidence that some oxidation conditions improve the bulk properties of the oxide layer, at the same time that they degrade the SiO2/SiC interface quality, and vice versa. An alternative oxidation process using H2O2 as oxidizing agent was proposed. Such process has shown to reduce the amount of electrically active defects at the interface in n-type samples by converting carbonaceous compounds in SiO2 in the formed dielectric layer.

Cette thèse a pour but d'étudier le dopage par implantation ionique pour la réalisation des différentes zones dopées des cellules solaires en silicium cristallin (émetteur, champ arrière...). L'avantage de l'implantation ionique, par rapport à la diffusion gazeuse, est de pouvoir contrôler le profil des dopants implantés ainsi que de simplifier les procédés de fabrication des cellules. Deux techniques d'implantation ionique ont été utilisées dans ces travaux, l'implantation classique par faisceau d'ions et l'implantation par immersion plasma. Des dopages au phosphore, au bore et à l'arsenic ont été réalisés par cette technique d'implantation avec une activation par recuit thermique. L'importance de la température de recuit, des doses d'implantation et des couches de passivation sur la qualité électrique des jonctions formées a été mise en évidence. Des jonctions à faible courant de saturation ont pu être obtenues pour les différentes sources dopantes. Ces dopages par implantation ont ensuite été appliqués à la réalisation de cellules solaires en silicium sur substrat de type p (avec un émetteur dopé au phosphore) et sur substrat de type n (avec un émetteur dopé au bore et un champ arrière dopé au phosphore). L'utilisation de l'implantation ionique a permis d'atteindre un rendement de 19,1 % sur les cellules de type p soit un gain de 0,6 %abs par rapport au dopage par diffusion gazeuse, ainsi qu'un rendement de 20,2 % sur les cellules de type n. / This study aims at investigating the use of ion implantation doping for the realization of emitters and back surface fields of silicon solar cells. The benefits of using ion implantation instead of high temperature gaseous diffusion are the possibility to precisely control the dopant concentration profiles as well as to simplify the solar cells fabrication process. Beam line ion implantation and plasma immersion ion implantation techniques have been used and compared during this work. Phosphorus, boron and arsenic have been implanted and activated by thermal annealing to form the various doping layers. The influences of the annealing temperature, of the implantation doses and of the passivation layers on the junction electrical quality have been studied. Low emitter saturation current densities were reached for each dopant. The implanted doped regions were then integrated in p-type silicon solar cell structure (including a phosphorus doped emitter) and in n-type PERT bifacial solar cell structure (including a boron doped emitter and a phosphorus doped back surface field). With the use of ion implantation, efficiency of 19,1 % was reached for the p-type solar cells corresponding to an overall gain of 0,6 %abs as compared to the gaseous diffusion doping, while 20,2 % of efficiency were measured on the n-type bifacial silicon solar cells.

Les électrodes transparentes (ET) sont présentes dans de nombreux dispositifs optoélectroniques. Par exemple, on peut les trouver au sein de cellules solaires, d'écrans tactiles, d'OLEDs ou encore de films chauffants transparents. Les propriétés physiques de ces électrodes influencent l'efficacité de ces dispositifs. Les ET sont fabriquées à partir de matériaux transparents conducteurs (TCM) dont le développement a débuté dans les années 1950 notamment avec les oxydes métalliques. Parmi ces oxydes transparents conducteurs (TCO), l'oxyde d'étain-indium (ITO) est celui le plus communément utilisé dans les cellules solaires et les écrans de télévision ou de smartphones. Cependant, de nouvelles exigences telles qu'une réduction des coûts, la flexibilité et la fabrication à faible température et/ou faible coût, ont orienté les recherches vers de nouveaux TCM, notamment à base de nanostructures. Parmi ces matériaux émergents, les réseaux de nanofils métalliques, en particulier de nanofils d'argent, présentent déjà des propriétés optiques et électriques approchant celles de l'ITO, c'est-à-dire une conductivité électrique et une transparence élevées. Ces deux propriétés sont cependant intrinsèquement liées à la densité de nanofils constituant le réseau, et lorsque la conductivité augmente, la transparence diminue. Des traitements post-dépôt existent et permettent d'augmenter la conductivité électrique des ET sans changer la densité du réseau. Plusieurs de ces méthodes d'optimisation ont été étudiées pendant ce travail de thèse, en particulier le recuit thermique, analysé minutieusement afin de comprendre les différents mécanismes de réduction de la conductivité électrique induits par la température. L'examen des effets thermiques a soulevé la question de l'instabilité des nanofils en température, qui est aussi abordée et discutée dans ce document. Le paramètre clé de la densité de nanofils optimale menant au meilleur compromis entre transparence et conductivité a été recherché pour des nanofils de différentes dimensions. La taille des nanofils a en effet un fort impact sur les propriétés du réseau. Ainsi, les propriétés électriques, dans le cadre de la théorie de la percolation, les propriétés optiques comme la transmittance et le facteur de haze, et même l'instabilité thermique ont été reliées aux dimensions des nanofils ainsi qu'à la densité du réseau en utilisant des modèles physiques simples. En ce qui concerne les applications de ces ET émergentes, des études ont été menées sur l'application des réseaux de nanofils d'argent comme film chauffant transparent, et les résultats sont rapportés à la fin de ce document. Les limitations soulevées par cette application, comme les limites de stabilités électrique et thermique ont aussi été abordées. Pour finir, des études préliminaires menées sur de nouvelles applications comme des antennes transparentes ou le blindage électromagnétique transparent utilisant les nanofils d'argent sont présentées. / Transparent electrodes (TE) are used in a variety of optoelectrical devices. Among them, solar cells, flat panel displays, touch screens, OLEDs and transparent heaters can be cited. The physical properties of the TE influence the efficiency of the device as a whole. Such electrodes are fabricated from transparent conducting materials (TCM) that have been undergoing development since the 1950s, initially from metallic oxides. Among these transparent conducting oxides (TCO), indium tin oxide (ITO) is the most commonly used in solar cells, and television or smartphone screens. However requirements such as cost reduction, flexibility and low cost/temperature fabrication techniques have oriented the researches toward emerging TCM, mostly using nanostructures. Among them, metallic nanowire networks, and in particular silver nanowires (AgNW), already present optical and electrical properties approaching those of ITO, i.e. a high electrical conductivity and a high transparency. These two properties are intrinsically linked to the network density, therefore a tradeoff has to be considered knowing that when conductivity increases, transparency decreases. Some post-deposition treatments do exist, allowing an increase of the TE electrical conductivity without changing the network density. Several of these optimization methods have been thoroughly studied during this thesis work, especially thermal annealing. This method have been investigated in details to understand the different thermally-induced mechanisms of conductivity improvement. In addition, the investigation of thermal effects raised the question of thermal instability of the nanowires, which is also addressed and discussed in this document. The key issue of density optimization, allowing the best tradeoff between transparency and conductivity, has been investigated for nanowires with different dimensions. Nanowire size has a strong impact on the network properties. Thus, electrical properties, within the framework of percolation theory, optical properties such as transmittance or haziness, and even thermal instability have been linked to the nanowires' dimensions and the network density by using simple physical models. Regarding the application of these emerging TE, studies were conducted on the application of AgNWs as transparent heaters, and the results are reported at the end of the document. Limitations arising from this application, like thermal and electrical stabilities, have also been addressed. To finish, preliminary studies conducted on new applications such as transparent antennas and transparent electromagnetic shielding using AgNW are presented.

Submitted by Aelson Maciera (aelsoncm@terra.com.br) on 2017-05-19T18:15:12Z No. of bitstreams: 1 TesePLMA.pdf: 8101922 bytes, checksum: 456faa861edf6a27b2e7de9a7a271429 (MD5) / Approved for entry into archive by Ronildo Prado (ronisp@ufscar.br) on 2017-05-23T20:32:54Z (GMT) No. of bitstreams: 1 TesePLMA.pdf: 8101922 bytes, checksum: 456faa861edf6a27b2e7de9a7a271429 (MD5) / Approved for entry into archive by Ronildo Prado (ronisp@ufscar.br) on 2017-05-23T20:33:05Z (GMT) No. of bitstreams: 1 TesePLMA.pdf: 8101922 bytes, checksum: 456faa861edf6a27b2e7de9a7a271429 (MD5) / Made available in DSpace on 2017-05-25T14:21:19Z (GMT). No. of bitstreams: 1 TesePLMA.pdf: 8101922 bytes, checksum: 456faa861edf6a27b2e7de9a7a271429 (MD5) Previous issue date: 2016-04-29 / Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / This work deals with modeling applications, systematic and reliable optimization methodologies of global search, and other computational tools. It is expected that existing computational intelligence methods, encoded in an appropriate tool for the application of process engineering assisted by computer, can lead to useful numerical results for the modeling and optimization of different processes, including biotechnological processes (focus of this work). Thus, different types of methodologies suitable for computer applications, were studied here. The proposed methodologies were implemented and evaluated for the development and optimization of culture media for the fermentation process of Clostridium novyi type B, besides the fermentation process and enzymatic hydrolysis of bagasse associated with the production of bioethanol (1G and 2G). Thus, the potential application of these computational techniques was evaluated to biotechnological systems in different approaches. More specifically, it was performed: Classification of biotechnological systems ( "clustering") in kinetically similar regions to produce cellulosic ethanol (2G ethanol) using fuzzy logic; estimation by global search of kinetic parameters to an alcoholic fermentation model using Simmulated Annealing algorithm (SA) (Contributions to the thematic project FAPESP 2011 / 51902-9); formulation and optimization of economically viable culture media for Clostridium novyi type B using neuro-fuzzy data modeling followed by global search which maximize productivity, also utilizing SA algorithm as a search engine (this step of the project was conducted in partnership with the veterinary pharmaceutical company Vallée SA). The computational tools presented in this work were highly effective for modeling and optimization of the bioprocesses studied. / Este trabalho aborda aplicações de modelagem, metodologias sistemáticas e confiáveis de otimização por busca global, além de outras ferramentas computacionais. Espera-se que métodos de inteligência computacional existentes, codificados em uma ferramenta apropriada para a aplicação da engenharia de processos assistida por computador, resultem em resultados numéricos úteis para a modelagem e otimização de diferentes processos, incluindo-se os processos biotecnológicos (foco deste trabalho). Assim, diferentes tipos de metodologias, apropriadas para aplicações em computador, foram aqui estudadas. Os métodos propostos foram aplicados e avaliados ao desenvolvimento e otimização de meios de cultura para o processo fermentativo do microrganismo Clostridium novyi tipo B, além dos processos de fermentação alcoólica e hidrolise enzimática de bagaço de cana, associados à produção de bioetanol (1G e 2G). Desta forma, foi avaliado o potencial de aplicação destas técnicas computacionais aos sistemas biotecnológicos, em diversas abordagens. Mais especificamente, foram realizadas: classificação (“clustering”) de sistemas em regiões cineticamente semelhantes para a produção de etanol celulósico (Etanol 2G) utilizando lógica Fuzzy; estimação por busca global de parâmetros cinéticos do modelo para uma fermentação alcoólica utilizando o algoritmo Simmulated Annealing (SA) (Contribuições ao projeto temático FAPESP 2011/51902-9); formulação e otimização do meio de cultura economicamente viável para o Clostridium novyi tipo B utilizando a modelagem de dados por neuro-fuzzy seguido de busca global da composição de meio que maximize a produtividade utilizando também o algoritmo SA como ferramenta de busca global (esta etapa do projeto foi realizado em parceria com a empresa farmacêutica veterinária Vallée S.A). As ferramentas computacionais apresentadas neste trabalho se mostraram altamente efetivas para a modelagem e otimização dos bioprocessos estudados." / FAPESP: 2011/51902-9. / FAPESP: 2008/56246-0.

Submitted by Aelson Maciera (aelsoncm@terra.com.br) on 2017-06-08T18:50:10Z No. of bitstreams: 1 DissGDAA.pdf: 2724824 bytes, checksum: 6fd66731c51c75a18c506fe7ab991ec4 (MD5) / Approved for entry into archive by Ronildo Prado (ronisp@ufscar.br) on 2017-06-13T19:33:47Z (GMT) No. of bitstreams: 1 DissGDAA.pdf: 2724824 bytes, checksum: 6fd66731c51c75a18c506fe7ab991ec4 (MD5) / Approved for entry into archive by Ronildo Prado (ronisp@ufscar.br) on 2017-06-13T19:33:53Z (GMT) No. of bitstreams: 1 DissGDAA.pdf: 2724824 bytes, checksum: 6fd66731c51c75a18c506fe7ab991ec4 (MD5) / Made available in DSpace on 2017-06-13T19:37:52Z (GMT). No. of bitstreams: 1 DissGDAA.pdf: 2724824 bytes, checksum: 6fd66731c51c75a18c506fe7ab991ec4 (MD5) Previous issue date: 2016-08-19 / Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) / The companies today are looking for ways to expand their competitive advantages, optimizing their production, and in this context, they found solutions in activities of production scheduling. The production scheduling of the type job-shop, results in one of the most complex problems of combination, the Job-shop Scheduling Problem (JSP), which deterministic resolution is not feasible in polynomial computational time. The Flexible Job-shop Scheduling Problem (FJSP) is a classic extension of the JSP and has been widely reported in the literature. Thus, optimization algorithms have been developed and evaluated in the last decades, in order to provide more efficient production planning, with emphasis to artificial intelligence algorithms of the swarm type, that the latest research presented favorable results. The FJSP allows an operation to be processed for any machine arising from a set of machines along different routes. This problem is commonly dismembered into two sub-problems, the assignment of machines for operations, which is called routing, and operation scheduling. In the FJSP context, this research presents the resolution of the FJSP multi-objective, using a hierarchical approach that divides the problem into two subproblems, being the Particle Swarm Optimization (PSO), responsible for resolving the routing sub-problem, and tasking three local search algorithms, Random Restart Hill Climbing (RRHC), Simulated Annealing (SA) and Tabu Search (TS), for the resolution of scheduling sub-problem. The implementation of the proposed algorithm has new strategies in the population initialization, displacement of particles, stochastic allocation of operations, and management of scenarios partially flexible. Experimental results using technical benchmarks problems are conducted, and proved the effectiveness of the hybridization, and the advantage of RRHC algorithm compared to others in the resolution of the scheduling subproblem. / As empresas atualmente buscam meios de ampliarem suas vantagens competitivas, otimizando sua produção, e neste contexto, encontraram soluções nas atividades de programação da produção. A programação da produção do tipo job-shop, resulta em um dos problemas mais complexos de combinação, o Job-shop Scheduling Problem (JSP), cuja resolução determinística é inviável em tempo computacional polinomial. O Flexible Job-shop Scheduling Problem (FJSP) é uma extensão do clássico JSP e tem sido amplamente relatado na literatura. Desta forma, algoritmos de otimização têm sido desenvolvidos e avaliados nas últimas décadas, com o intuito de fornecer planejamentos de produção mais eficientes, com destaque para os algoritmos de inteligência artificial do tipo enxame, que nas pesquisas mais recentes obtiveram resultados satisfatórios. O FJSP permite que uma operação seja processada por qualquer recurso produtivo advindo de um conjunto de recursos ao longo de diferentes roteiros. Este problema é comumente desmembrado em dois subproblemas, a atribuição de recursos para as operações, que é chamado de roteamento, e programação das operações. No contexto do FJSP, a proposta dessa pesquisa apresenta a resolução do FJSP em caráter multiobjetivo, utilizando a abordagem hierárquica, que divide o problema em dois subproblemas, sendo o Enxame de Partículas (PSO), responsável pela resolução do subproblema de roteamento e incumbindo três algoritmos de busca local, Reinício Aleatório de Subida de Colina (RRHC), Arrefecimento Simulado (SA) e Busca Tabu (TS), para a resolução do subproblema de programação. A implementação do algoritmo proposto, dispõe de novas estratégias na inicialização da população, deslocamento das partículas, alocação estocástica das operações e tratamento de cenários parcialmente flexíveis. Resultados experimentais obtidos em base de testes comumente usada, comprovam a eficácia da hibridização proposta, e a vantagem do algoritmo RRHC em relação aos outros na resolução do subproblema de programação.