<p><p>This project aims in building a new experimental setup for capacitive measurements of a pH-Sensor. PAA-IOA (Poly Acrylic Acid co – Iso Octyl Acrylate) is the dielectric material over the in-plane interdigitated gold electrodes where PAA IOA acts as an H⁺ ion sensing layer. The changes in the capacitance of the sensor when the sensor is dipped into different pH solutions will be quantized accordingly. The dipping setup is built in such a way that the electrodes (containing the polymer layer) can be easily dipped into different pH liquids and to eliminate any contact between the polymer and set-up (e.g. pressure effects on the sensor). From the setup it is visible that the gold electrodes are not subjected to any external force as in the case of the setup used previously. Three phases of experiments have been used in this project to get a clear view on the working principle of the polymer. The effect of pH is only considered in this project, as we already have the evidences for the salt sensitiveness of PAA IOA from the work done in the past. The influence of various pH on polymer is observed as capacitance measurements. Response time is more than 5 minutes for PAA IOA. ∆C decreases with frequency and frequency choice depends on application/electronics. The degree of other ions influence is not clear but they have a minor influence in the resistance.</p></p>

This project aims in building a new experimental setup for capacitive measurements of a pH-Sensor. PAA-IOA (Poly Acrylic Acid co – Iso Octyl Acrylate) is the dielectric material over the in-plane interdigitated gold electrodes where PAA IOA acts as an H+ ion sensing layer. The changes in the capacitance of the sensor when the sensor is dipped into different pH solutions will be quantized accordingly. The dipping setup is built in such a way that the electrodes (containing the polymer layer) can be easily dipped into different pH liquids and to eliminate any contact between the polymer and set-up (e.g. pressure effects on the sensor). From the setup it is visible that the gold electrodes are not subjected to any external force as in the case of the setup used previously. Three phases of experiments have been used in this project to get a clear view on the working principle of the polymer. The effect of pH is only considered in this project, as we already have the evidences for the salt sensitiveness of PAA IOA from the work done in the past. The influence of various pH on polymer is observed as capacitance measurements. Response time is more than 5 minutes for PAA IOA. ∆C decreases with frequency and frequency choice depends on application/electronics. The degree of other ions influence is not clear but they have a minor influence in the resistance.

The primary objective of this master’s thesis is to discuss a design and development of proximity touch control panel, which contains two simulated buttons and one rotary slider simulating functions of the potentiometer using specialized sensor controllers. The first part is describing functions and different technologies used to create touch sensors. It also introduces its usage in practice, advantages and disadvantages of different technologies which provides the readers with basic theoretical knowledge and introduction into the touch sensors. The second part as follows describes the definition of Integrated Circuits MPR083 and MPR084, outline of the features and methods of their functions. Displays internal connection of these circuits and describes forms of the serial communication with microcontroller connected to I2C bus. In these part there are in details described individual internal registers of these Integrated Circuits and theirs typical setups. It shows how it is possible to use the external interrupts and examples of their practical application. In the last chapter of these thesis is described the layout of the individual modules and construction of the whole designed device. The work is introducing two different concepts of programming the microcontrollers and consequently also construction of the appropriate ISP and JTAG programmers. It also introduces construction of the display units for visual feedback with the user and approach of the communication for the control LED matrix and graphical LCD display. The main part of this thesis is the construction of the control circuit, which includes key part, microcontroller ATmega16. It also presents the description of the program written in development environment AVR Studio in programming language C and his specific functions. In conclusion of the thesis are listed real measured behavior of the communication on I2C bus and their description.

The semiconductor industry was benefited by the advances in technology in the last decades. This fact has an impact on the sensors field, where the simple transducer was evolved into smart miniaturized multi-functional microsystems. However, commercially available gas and biological sensors are mostly bulky, expensive, and power-hungry, which act as obstacles to mass use. The aim of this work is gas and biological sensing using capacitive structures. Capacitive sensors were selected due to its design simplicity, low fabrication cost, and no DC power consumption. In the first part, the dominant structure among interdigitated electrodes (IDEs), fractal curves (Peano and Hilbert) and Archimedean spiral was investigated from capacitance density perspective. The investigation consists of geometrical formula calculations, COMSOL Multiphysics simulations and cleanroom fabrication of the capacitors on a silicon substrate. Moreover, low-cost fabrication on flexible plastic PET substrate was conducted outside cleanroom with rapid prototyping using a maskless laser etching. The second part contains the humidity, Volatile Organic compounds (VOCs) and Ammonia sensing of polymers, Polyimide and Nafion, and metal-organic framework (MOF), Cu(bdc)2.xH2O using IDEs and tested in an automated gas setup for experiment control and data extraction. The last part includes the biological sensing of C - reactive protein (CRP) quantification, which is considered as a biomarker of being prone to cardiac diseases and Bovine serum albumin (BSA) protein quantification, which is used as a reference for quantifying unknown proteins.

No description available.

No description available.

De nos jours, les capteurs capacitifs sont largement utilisés dans la mesure de grandeurs physiques telles que le déplacement, l’humidité, la pression, etc. Cette large diffusion est principalement due au développement des technologies MEMS qui ont permis de réduire leur coût, leur taille et leur consommation. Pour mesurer ces variations de capacité, des interfaces de conditionnement électronique ont été développées afin d’obtenir un signal électrique exploitable tel qu’une tension, un courant, un temps, une fréquence ou directement une sortie numérique. C’est dans ce cadre que se positionne l’objectif de cette thèse ; étudier la faisabilité d’une mesure capacitive à sortie numérique à partir d’un pont actif, une architecture développée et brevetée par l’équipe Conception et Test de Microsystèmes du LIRMM pour le conditionnement de capteurs résistifs basse consommation. La conversion numérique utilisée est une modulation Sigma-Delta 1 bit du 1er ordre, relativement facile à implémenter, et donc bien adaptée à l’intégration, à la faible consommation et à la réalisation d’interfaces génériques. Pour le retour 1 bit, deux structures de contre réaction ont été proposées : une contre-réaction résistive et une capacitive. Les résultats théoriques sont comparés à des résultats de simulations et à des mesures obtenues à partir des prototypes fabriqués en technologie CMOS 0,35μm d’Austria MicroSystem (AMS). / Nowadays, capacitive sensors are widely used in the measurement of physical quantities such as displacement, humidity, pressure, etc. This wide dissemination is mainly due to the development of MEMS technologies that have reduced their cost, size and consumption. To measure these capacitance changes, sensor electronic interfaces have been developed to obtain an exploitable electrical signal such as voltage, current, time, frequency or directly a digital output. It is in this framework that the aim of this thesis is positioned ; to study the feasibility of a capacitive measurement with digital output from an active bridge, an architecture developed and patented by the Design and Test Microsystems team of LIRMM for conditioning low power resistive sensors. The digital conversion used is a one-bit first-order Sigma-Delta modulation that is relatively easy to implement, and is well adapted to integration, low power consumption and realization of generic sensor interfaces. Two feedback architectures have been proposed: a resistive feedback and a capacitive. The theoretical results are compared with the results of simulations and measurements obtained from prototypes fabricated using a 0.35μm CMOS technology from Austria MicroSystem (AMS).

MEMS Sensors are widely used for sensing inertial displacements. The displacements arising out of acceleration /Coriolis effect are typically in the range of 1 nm-1 m. This work investigates the realization of high resolution MEMS inertial sensors using novel displacement sensing mechanisms. Capacitance sensing ASIC is developed as part of conventional electronics interface with MEMS sensor under the conventional CMOS-MEMS integration strategy. The capacitance sense ASIC based on Continuous Time Voltage scheme with coherent and non-coherent demodulation is prototyped on AMS 0.35 m technology. The ASIC was tested to sense C = 3.125 fF over a base of 2 pF using on-chip built-in test capacitors. Dynamic performance of this ASIC was validated by interfacing with a DaCM MEMS accelerometer. 200milli-g of acceleration (equivalent to a C = 2.8 fF) over an input frequency of 20Hz is measurable using the developed ASIC. The observed sensitivity is 90mV/g. The ASIC has several programmable features such as variation in trim capacitance (3.125 fF-12.5 pF), bandwidth selection (500 Hz-20 kHz) and variable gain options (2-100). Capacitance detection, a dominant sensing principle in MEMs sensors, experiences inherent limitation due to the role of parasitics when the displacements of interest are below 5 nm range. The capacitive equivalence ( C) for the range of displacements of the order of 5 nm and below would vary in the range atto-to-zepto farad. Hence there is a need to explore alternative sensing schemes which preferably yield higher sensitivity (than those offered by the conventional integration schemes) and are based on the principle of built-in transduction to help overcome the influence of parasitics on sensitivity. In this regard, 3 non-conventional architectures are explored which fall under the direct integration classification namely: (a) Sub-threshold based sensing (b) Fringe field based sensing and (c) Tunneling current based sensing. a) In Sub-threshold based sensing, FET with a suspended gate is used for displacement sensing. The FET is biased in the sub-threshold region of operation. The exponential modulation of drain current for a change in displacement of 1 nm is evaluated using TCAD, and the in uence of initial air-gap variation on the sensitivity factor ( ID=ID) is brought out. For 1% change in air gap displacement (i.e., TGap/TGap, the gap variation resulting due to the inertial force / mass loading) nearly 1050% change in drain current( ID=ID) is observed (considering initial air gaps of the order 100 nm). This validates the high sensitivity offered by the device in this regime of operation. A comparison of sensitivity estimate using the capacitive equivalence model and TCAD simulated model for different initial air-gaps in a FD-SOI FET is brought out. The influence of FDSOI FET device parameters on sensitivity, namely the variation of TSi, TBox, NA and TGap are explored. CMOS compatibility and fabrication feasibility of this architecture was looked into by resorting to the post processing approach used for validating the sub-threshold bias concept. The IMD layers of the Bulk FETs fabricated through AMS 0.35 technology were etched using BHF and IPA mixture to result in a free standing metal (Al) layers acting as the suspended gate. The performance estimate is carried out considering specific Equivalent Gap Thickness (EGT) of 573 nm and 235 nm, to help overcome the role of coupled electrostatics in influencing the sensitivity metric. The sensitivity observed by biasing this post processed bulk FET in sub-threshold is 114% ( ID=ID change) for a 59% ( d/d change). The equivalent C in this case is 370 aF. b) In Fringe eld based sensing approach, a JunctionLess FET (JLFET) is used as a depletion mode device and an out-of-plane gate displacement would help modulate the device pinch-o voltage due to fringe field coupling. The resulting change in the gate fringe field due to this displacement modulates the drain current of the JunctionLess FET. The displacement induced fringe field change (relative to the FET channel) brings about a distinct shift in the ID-VG characteristics of the JLFET. For displacement d = 2 nm, the JLFET with a channel doping of ND = 8X1018cm 3 and a bias point of VG = -47.7 V, 98% enhancement in sensitivity is observed in 3D TCAD simulations. The equivalent C in this case is 29 zF. The role of ground-planes in the device operation is explored. c) In the tunneling current based sensing approach, the beams fabricated using the SOI-MUMPS process are FIB milled so as to create very ne air gaps of the order of nearly 85 nm. Under high electric fields of the order > 8 MV/cm, the lateral displacement based tunneling sensor offers enhanced change in sensitivity for an induced external force at a fixed DC bias. When integrated as an array with varying electrode overlap, this technique can track displacements over a wide range. With the initial beam overlap as 1.2 m, for a lateral displacement of 1.2 m, a 100% change in sensitivity ( ID=ID) is observed. The effect of fringe field can be completely neglected here unlike its capacitive beam equivalent.

Kapazitive Sensoren, insbesondere kapazitive Näherungsschalter, werden aufgrund ihrer Fähigkeit nahezu beliebige Materialien detektieren zu können bereits seit vielen Jahrzehnten in unterschiedlichsten Applikationen der industriellen Messtechnik eingesetzt. Aufgrund ihrer kompakten Bauform, ihrer hohen Robustheit und ihres vergleichsweise günstigen Preises werden diese Sensoren auch heute noch in vielen Anwendungen eingesetzt. Wegen ihrer hohen Empfindlichkeit auf jegliche Änderung der elektrischen Eigenschaften in der Umgebung der Messelektrode werden kapazitive Näherungsschalter bei der berührungslosen Erkennung von Grenzständen eingesetzt, wobei der Sensor an der Außenseite eines nicht-leitenden Behälters angebracht ist. In den letzten Jahren sind die Anforderungen an die Sensorik immer weiter gestiegen. Statt einfacher Näherungsschalter, die ein binäres Schaltsignal ausgeben, werden heute zunehmend Sensoren gefordert, die ähnlich kompakt sind und die Sensorkapazität als Prozesswert ausgeben. Dadurch können potenziell neue Anwendungsfelder erschlossen werden. Insbesondere bei der Erkennung hoch-leitfähiger Medien sind Anhaftungen, die sich im Bereich der Messelektrode auf der Behälterinnenseite absetzen, problematisch. Die von den Sensoren gemessene Kapazität ist für das Vorhandensein einer leitfähigen Anhaftung und den tatsächlichen Vollzustand nahezu identisch, was zu Fehlauslösungen des Sensors führen kann. Es existieren bereits Ansätze leitfähige Anhaftungen auszublenden, wie beispielsweise die Verwendung kurzer Impulse als Anregungssignal. Allerdings sind die bei diesen Verfahren auftretenden großen Messfrequenzen ungünstig für das Sensorverhalten bezüglich der elektromagnetischen Verträglichkeit. Weiterhin können alternative Messprinzipien, wie beispielsweise Wirbelstromverfahren, verwendet werden. Bei diesen Verfahren ist jedoch die minimale Leitfähigkeit des Mediums, das detektiert werden kann, begrenzt. Ziel dieser Arbeit ist die Entwicklung eines Verfahrens zur Anhaftungserkennung bei kapazitiven Näherungsschaltern, das zusätzlich Informationen über das zu detektierende Medium liefert. Mit Hilfe der Impedanzspektroskopie gekoppelt mit analytischen und numerischen Modellierungsverfahren wird ein aus drei Parametern bestehendes vereinfachtes Modell entwickelt, das die zuverlässige Unterscheidung von Voll- Leer- und Anhaftungszustand ermöglicht. Einer dieser Parameter, der Gesamtwiderstand, erlaubt Rückschlüsse auf die Leitfähigkeit des zu detektierenden Mediums. Dieses neue Verfahren hat das Potenzial auch in komplexeren Applikationen Anwendung zu finden. / Capacitive sensors, especially capacitive proximity switches, are used in many applications because of their ability to detect almost any material. These sensors are still commonly used today due to their compact design, their high robustness and their comparatively low price. Because of their high sensitivity to changes of the electrical properties of materials in vicinity of the measurement electrode, capacitive proximity switches can be used for contactless limit level sensing. The sensor is often mounted on the outside of the liquid container. In recent years, requirements in regard to sensor performance have increased. Instead of just outputting a binary signal, capacitive proximity switches are expected to also output their measured capacitance, which could potentially open new fields of application. When detecting highly conductive fluids, soiling on the inside of the container in vicinity of the measurement electrode is problematic. The measured capacitance of a conductive film and the actual limit level are almost identical, which can cause false positive detection of a limit level. There are already various approaches to compensate for conductive soiling in vicinity of the measurement electrode, one of which includes the usage of short impulses for excitation. However, the high frequencies involved in these methods can cause problems with respect to electromagnetic compatibility. In addition, alternative measurement principles, like the eddy current principle, can be used. However, this principle imposes constraints on the minimum conductivity of the material to be detected. In this work, a technique to distinguish between conductive soiling and the actual fill level, which also allows to extract information about the material to be detected, is developed. Using impedance spectroscopy combined with analytical and numerical modelling, a model consisting of three parameters is developed. The model allows to reliably distinguish between actual limit level and conductive soiling. The overall resistance supplied by the model can be used as a measure for the conductivity of the material to be detected. The technique has the potential to be used in demanding applications.