Spelling suggestions: "subject:"a:ffect transistors"" "subject:"a:ffect ransistors""
21 |
Fabrication and characterization of modulation doped field effect transistors for quantum waveguide structuresYindeepol, Wipawan, 1960- 12 July 1990 (has links)
Split and normal gate A1GaAs /GaAs MODFETs were fabricated along with
the ohmic test structures and the Hall bar geometries. The DC characteristics of
normal gate transistors were evaluated at room temperature and at 77K and the
threshold voltages were extracted from the measurements and compared to the
theoretical results. The performance of normal gate transistors was reasonable.
The sheet carrier density and the mobility extracted from Hall measurements using
the Hall bar geometry showed increase of carrier density with increasing gate
voltage and an increase of mobility with increasing carrier density. The contact
resistance obtained from the ohmic test structure was high and not uniform within
the sample. / Graduation date: 1991
|
22 |
Submicron and nanoscale organic field-effect transistors and circuitsJung, Tae Ho 28 August 2008 (has links)
Not available / text
|
23 |
Effects of illumination on the properties of organic field-effect transistorsWasapinyokul, Kamol January 2011 (has links)
No description available.
|
24 |
The replacement of diffused resistors in integrated digital circuits by field effect current limitersWhalen, James W. January 1966 (has links)
No description available.
|
25 |
Development of chemically sensitive field-effect transistor arrays and selective materialsPolk, Brian Joseph 08 1900 (has links)
No description available.
|
26 |
Field effect transistors in differential amplifiersGray, James Stephen 08 1900 (has links)
No description available.
|
27 |
A theory for optically-gated gallium-arsenide MESFETSDarling, Robert Bruce 05 1900 (has links)
No description available.
|
28 |
Charge transport in polymer semiconductorsBasu, Debarshi, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.
|
29 |
Studies on field effect transistors with conjugated polymer and high permittivity gate dielectrics using pulsed plasma polymerizationXu, Yifan. January 2005 (has links)
Thesis (Ph. D.)--Ohio State University, 2005. / Title from first page of PDF file. Document formatted into pages; contains xx, 187 p.; also includes graphics (some col.). Includes bibliographical references (p. 174-187). Available online via OhioLINK's ETD Center
|
30 |
Silicon implant profile control by co-implantationGwilliam, Russell January 1991 (has links)
This thesis reports the development of two rapid thermal annealing systems, one based on resistive heating of graphite strips, the second on heating from incoherent lamp radiation. Electrical activation studies of silicon implanted gallium arsenide has been used to compare the systems with those available commercially. It has been shown that commercial systems can yield temperature measurement errors in excess of 50° C. Furthermore, the systems have been used to investigate the electrical activation of silicon implants co-implanted with other ions into gallium arsenide, with a view to either, improving the activation of the silicon for high doses, or modifying the carrier profile shape for low doses. A factor of two improvement in the electrical activation of high dose silicon implants has been achieved by the co-implantation of phosphorus, with a reduction in the annealing temperature required to achieve a given activity also being observed. An alternative processing methodology is also proposed for through- nitride implantation. Phosphorus implants have also been used to "pre-amorphise" substrates to prevent ion channelling. Providing the damage is maintained below a certain level, improvements in profile shape can be obtained. Other compensation techniques using boron and carbon implants have also been investigated. Boron has been demonstrated to provide improved carrier activation for low implant doses, with thermally stable profile modification capability as the dose is increased. The electrical activation of single carbon implants (40% maximum) is below the level of compensation of silicon implants (approximately 90%) co-implanted with carbon. This in turn means carbon is excellent for profile modification as no p-type layer is created beyond the donor implant.
|
Page generated in 0.0473 seconds