Yes / Results and analysis from investigations into the behaviour of the interfacial layer (Tribolayer) at the friction interface of a brake friction pair (resin bonded composite friction material and cast iron rotor) are presented in which the disc/pad interface temperature has been measured using thermocouple methods. Using a designed experiment approach, the interface temperature is shown to be affected by factors including the number of braking applications, the friction coefficient, sliding speed, braking load and friction material. The time-dependent nature of the Tribo-Iayer formation and the real contact area distribution are shown to be causes of variation in interface temperatures in friction braking. The work extends the scientific understanding of interface contact and temperature during friction braking.

High-k/metal gate stacks have been introduced in CMOS technology during the last decade in order to sustain continued device scaling and ever-improving circuit performance. Starting from the 45 nm technology node, the stringent requirements in terms of equivalent oxide thickness and gate current density have rendered the replacement of the conventional SiON/poly-Si stack unavoidable. Although Hf-based technology has become the de facto industry standard for high-k/metal gate MOSFETs, problematic long-term scalability has motivated the research of novel materials and solutions to fulfill the target performances expected of gate stacks in future technology nodes. In this work, integration of a high-k interfacial layer has been identified as the most promising approach to improve gate dielectric scalability, since this technology presents the advantage of potential compatibility with both current Hf-based and plausible future higher-k materials. Thulium silicate has been selected as candidate material for integration as interfacial layer, thanks to its unique properties which enabled the development of a straightforward integration process achieving well-controlled and repeatable growth in the sub-nm thickness regime, a contribution of 0.25+-0.15 nm to the total EOT, and high quality of the interface with Si. Compatibility with industry-standard CMOS integration flows has been kept as a top priority in the development of the new technology. To this aim, a novel ALD process has been developed and characterized, and a manufacturable process flow for integration of thulium silicate in a generic gate stack has been designed. The thulium silicate interfacial layer technology has been verified to be compatible with standard integration flows, and fabrication of high-k/metal gate MOSFETs with excellent electrical characteristics has been demonstrated. The possibility to achieve high performance devices by integration of thulium silicate in current Hf-based technology has been specifically demonstrated, and the TmSiO/HfO2 dielectric stack has been shown to be compatible with the industrial requirements of operation in the sub-nm EOT range (down to 0.6 nm), reliable device operation over a 10 year expected lifetime, and compatibility with common threshold voltage control techniques. The thulium silicate interfacial layer technology has been especially demonstrated to be superior to conventional chemical oxidation in terms of channel mobility at sub-nm EOT, since the TmSiO/HfO2 dielectric stack achieved ~20% higher electron and hole mobility compared to state-of-the-art SiOx/HfO2 devices at the same EOT. Such performance enhancement can provide a strong advantage in the EOT-mobility trade-off which is commonly observed in scaled gate stacks, and has been linked by temperature and stress analyses to the higher physical thickness of the high-k interfacial layer, which results in attenuated remote phonon scattering compared to a SiOx interfacial layer achieving the same EOT. / <p>QC 20140512</p>

Dans cette thèse, les propriétés de l'eau en présence d'ions dans des nanoconfinement à base de silice ont été étudiées. L'objectif principal est de relier ces propriétés à l'évolution des matériaux mésoporeux de silice dans les solutions aqueuses. Pour atteindre cet objectif, nous avons utilisé une approche originale consistant à remplir avec des solutions électrolytiques comportant des ions ayant des propriétés kosmotropes différentes, XCl2 (X = Ba, Ca, Mg) des systèmes modèles tels que deux surfaces de silice parallèles et planes espacées de 3 et 5 nm (nanocanaux) et des silices à mesoporosité ordonnée comme les silices SBA-15 (6 nm de taille pores et murs des pores microporeux) et MCM-41 (3 nm de taille de pores et murs des pores denses).Les résultats obtenus indiquent que la cinétique de remplissage des nanocanaux dépend de la taille du confinement, de la nature des ions et de la solubilité des sels associés aux électrolytes. Dans certains cas, le remplissage incomplet des nanocanaux peut s'expliquer par une diminution de la dynamique de l'eau associée à l’atteinte de la saturation vis-à-vis des sels XCl2 dans la couche interfaciale. La possible précipitation de phases XCl2 pourrait permettre d’expliquer le bouchage de certains nanocanaux. Par la suite, les propriétés de l'eau dans des nanoconfinement concave de silice tels que les cylindres ont également été étudiées. La structure de l’eau en présence d’ions et sa dynamique à l’échelle de la picoseconde caractérisées respectivement par FTIR-ATR et diffusion quasi élastique des neutrons, ont été analysées. Les résultats suggèrent que les propriétés structurales et dynamiques de l'eau sont fortement influencées par la taille du confinement, le caractère kosmotrope des ions et l'excès d'ions dans la couche interfaciale.Enfin, nous avons déterminé l’évolution des deux silices mésoporeuses dans des solutions électrolytiques par diffusion des rayons X aux petits angles. Pour une taille de pore de 3 nm et des murs de pores denses (MCM-41), une dynamique de l’eau lente à une échelle picoseconde conduit probablement à une sursaturation des ions dans la couche interfaciale et donc à une reprécipitation des sels XCl2 et / ou de la silice plus stable. Dans ce cas, l'évolution du MCM-41 est induite par un processus de dissolution-recondensation / précipitation. Dans les plus grands mésopores du SBA-15, en raison de la microporosité dans la paroi des pores, le processus d'altération est différent. Dès le début, une couche d'altération se forme et la taille des pores augmente jusqu'à saturation de la silice. Par la suite, un processus de recondensation / précipitation similaire à celui observé dans la MCM-41 se produit dans la microporosité. Ces deux types d'évolutions en silice pourraient persister jusqu'à l'obtention d'une phase de silice thermodynamiquement stable. / In this study, we investigated the water properties in the presence of ions in silica nanoconfinement. The main objective is to relate these water properties to the evolution of silica mesoporous materials in aqueous solutions. To reach this goal, we used an original approach, consisting in the use of electrolyte solutions having ions with various kosmotropic property XCl2 (X = Ba, Ca, Mg) confined in model systems such as two parallel and plane silica surfaces spaced of 3 and 5 nm (nanochannels) and highly ordered mesoporous silica materials represented by SBA-15 (6 nm pore size and microporous pore wall) and MCM-41 (3 nm pore size and dense pore wall).The obtained results indicate that the filling kinetics in nanochannels is driven by the size of the confinement, the nature of ions and the salt solubility of electrolytes. In some cases, the incomplete filling of the nanochannels may be explained by a decrease of water dynamics associated to the saturation of XCl2 salts into the interfacial layer. The possible precipitation of XCl2 phases may explain an incomplete filling by a nanochannels clogging.Thereafter, the water properties in nanoconfinement made of silica concave surface such as cylinders were studied. The water structure and dynamics at a picosecond scale in presence of ions were respecteively characterized by infrared spectroscopy and quasi-elastic neutron scattering. The results suggest that the structural and dynamical water properties are strongly affected by the size of the confinement, the kosmotropic properties of ions and the surface ion excess in the interfacial layer.Finally, we characterized the evolution of the two mesoporous silica in electrolyte solutions using in-situ small-angle X-ray scattering. For 3 nm pore size and dense pore wall (MCM-41), the slow dynamics at a picosecond scale probably lead to a supersaturation of ions in the interfacial layer and thus, to a reprecipitation of XCl2 salts and/or silica phases. In that case, the evolution of the MCM-41 is driven by a dissolution-recondesation/precipitation process. In the bigger mesopores of SBA-15, due to the microporosity in the pore wall, the alteration process is different. During a first stage, an alteration layer is formed and the pore size increases until the silica saturation. Afterwards, a similar recondensation/precipitation process as observed in MCM-41 occurs into the microporosity. These two types silica evolutions could persist until the formation of a thermodynamic stable silica phase.

abstract: In this work a newly fabricated organic solar cell based on a composite of fullerene derivative [6,6]-phenyl-C61 butyric acid methyl ester (PCBM) and regioregular poly (3-hexylthiophene) (P3HT) with an added interfacial layer of AgOx in between the PEDOT:PSS layer and the ITO layer is investigated. Previous equivalent circuit models are discussed and an equivalent circuit model is proposed for the fabricated device. Incorporation of the AgOx interfacial layer shows an increase in fill factor (by 33%) and power conversion efficiency (by 28%). Moreover proper correlation has been achieved between the experimental and simulated I-V plots. The simulation shows that device characteristics can be explained with accuracy by the proposed model. / Dissertation/Thesis / Masters Thesis Electrical Engineering 2015

No description available.

<p> Aluminum is usually added to the zinc bath to form an Fe-Al interfacial layer which retards the formation of a series of Fe-Zn intermetallic compounds during the hot-dip galvanizing process. However, experimentally exploring the inhibition layer formation and obtaining useful experimental data to understand the mechanisms is quite challenging due to short times involved in this process. In this study, a galvanizing simulator was used to perform dipping times as short as O.ls and rapid spot cooling techniques have been applied to stop the reaction between the molten zinc coating and steel substrate as quickly as possible. In addition, the actual reaction time has been precisely calculated through the logged sample time and temperature during the hot-dipping process. The kinetics and formation mechanism of the inhibition layer was characterized using SEM, ICP and EBSD based on the total reaction time. For bath containing 0.2wt% dissolved AI, the results show that FeA13 nucleates and grows during the initial stage of the inhibition layer formation and then Fe2Als forms by a diffusive transformation. The evolution of the interfacial layer formed in a zinc bath with 0.13wt% dissolved AI, including Fe-Aland Fe-Zn intermetallic compounds, was a result of competing reactions. In the initial period, the Fe-Al reaction dominated due to high thermodynamic driving forces. After the zinc concentration reached a critical composition in the substrate grain boundaries, formation of Fe-Zn intermetallic compounds was kinetically favoured. Fe-Zn intermetallic compounds formed due to zinc diffusing to the substrate via short circuit paths and continuously grew by consuming Fe-Al interfacial layer after samples exited the zinc bath due to the limited Al supply. A mathematical model to describe the formation kinetics as a function of temperature for the 0.2wt% Al zinc bath was proposed. It indicated that the development of microstructure of the interfacial layer had significant influence on the effective diffusion coefficient and growth of this layer. However, the model underestimates the AI uptake by the interfacial layer, particularly at higher temperatures. This is thought to be due to the effect of the larger number of triple junctions in the inhibition layer leading to an underestimation of the effective diffusivity. </p> / Thesis / Master of Science (MSc)

The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. One of the main issues is the escalating 1/fnoise level, which leads to degradation of signal-to-noise ratio (SNR) in electronic circuits. The focus of this thesis is on low-frequency noise characterization and modeling of various novel CMOS devices. The devices include PtSi Schottky-barriers  for source/drain contactsand different high-kgatestacksusingHfO2, LaLuO3 and Tm2O3 with different interlayers. These devices vary in the high-k material, high-k thickness, high-k deposition method and interlayermaterial. Comprehensive electrical characterization and low-frequency noise characterization were performed on various devices at different operating conditions. The noise results were analyzed and models were suggested in order to investigate the origin of 1/f noise in these devices. Moreover, the results were compared to state-of-the-art devices. High constant dielectrics limit the leakage current by offering a higher physical dielectric thickness while keeping the Equivalent Oxide Thickness (EOT) low. Yet, the 1/f noise increases due to higher number of traps in the dielectric and also deterioration of the interface with silicon compared to SiO2. Therefore, in order to improve the interface quality, applying an interfacial layer (IL) between the high-k layer and silicon is inevitable. Very thin, uniform insitu fabricated SiO2 interlayers with HfO2 high-k dielectric have been characterized. The required thickness of SiO2 as IL for further scaling has now reached below 0.5 nm. Thus, one of the main challenges at the current technology node is engineering the interfacial layer in order to achieve both high quality interface and low EOT. High-k ILs are therefore proposed to substitute SiOx dielectrics to fulfill this need. In this work, we have made the first experiments on low-frequency noise studies on TmSiO as a high-k interlayer with Tm2O3 or HfO2 on top as high-k dielectric. The TmSiO/Tm2O3 shows a lower level of noise which is suggested to be related to smoother interface between the TmSiO and Tm2O3. We have achieved excellentnoise performancefor TmSiO/Tm2O3 and TmSiO/HfO2 gate stacks which are comparableto state-of-the-art SiO2/HfO2 gate stacks. / <p>QC 20151130</p>

The progress of the silicon-based complementary-metal-oxide-semiconductor (CMOS) technology is mainly contributed to the scaling of the individual component. After decades of development, the scaling trend is approaching to its limitation, and there is urgent needs for the innovations of the materials and structures of the MOS devices, in order to postpone the end of the scaling. Atomic layer deposition (ALD) provides precise control of the deposited thin film at the atomic scale, and has wide application not only in the MOS technology, but also in other nanostructures. In this dissertation, I study rapid thermal processing (RTP) treatment of thermally grown SiO2, ALD growth of SiO2, and ALD growth of high-k HfO2 dielectric materials for gate oxides of MOS devices. Using a lateral heating treatment of SiO2, the gate leakage current of SiO2 based MOS capacitors was reduced by 4 order of magnitude, and the underlying mechanism was studied. Ultrathin SiO2 films were grown by ALD, and the electrical properties of the films and the SiO2/Si interface were extensively studied. High quality HfO2 films were grown using ALD on a chemical oxide. The dependence of interfacial quality on the thickness of the chemical oxide was studied. Finally I studied growth of HfO2 on two innovative interfacial layers, an interfacial layer grown by in-situ ALD ozone/water cycle exposure and an interfacial layer of etched thermal and RTP SiO2. The effectiveness of growth of high-quality HfO2 using the two interfacial layers are comparable to that of the chemical oxide. The interfacial properties are studied in details using XPS and ellipsometry.

Friction modifiers are a new effective way to control adhesion in wheel and rail contact. The aim of this diploma thesis is experimental study of the influence of the constituents of water based friction modifier on adhesion. Measurement of the adhesion behavior for different friction modifier compositions is carried out on a ball–on–disc laboratory device creating point contact. The introductory part of the experiments describes the effect of individual components on adhesion. Subsequently, combinations of different friction modifier compositions are tested. In conclusion, selected compositions are used for wear tests. The results obtained show that the performance of friction modifiers is greatly influenced by evaporation of base medium.

The aim of this diploma thesis is to optimize a method of interfacial rheology for testing the interfacial behaviour of biofilms on the liquid-air interface and after that use the method for studying the biofilm formation under optimal and stress conditions. For studying the biofilm formation, Kombucha was used. It is a microbial culture forming a cellulose biofilm on the interface. As the stress conditions, reduction of sucrose concentration, change of pH and change of ionic strength was used. Next, the ability of regeneration of biofilm formed on the interface was studied. The biofilm formation was occured in all cases except of increasing ionic strength. As expected, the best biofilm biofilm growth was observed under optimal condition, which means a sucrose concentration 100 g/l.