The target of this thesis is to fabricate through Silicon via (TSV) structures based on Si-bench technology for high-speed transmission interface. In this process, Si via with a depth of 250 £gm were formed by dry etching on a 500 £gm thick <111> Si wafer. The TSV were then obtained by removing the bottom of the silicon wafer using grinding technique. To reduce microwave loss of high frequency signal transmission, we oxidized the TSV by oxygen wet oxidation at a temperature of 1000 oC. Finally, conductive paths through the TSV were formed by filling silver epoxy into the via and dry at a temperature of 200 oC for 1 hour. The s parameters of the high speed TSV structure was characterized by a Vector Network Analyzer. Si-bench technology can effectively improve system integration and performance while reducing cost and size of the module package. . Key words: Through silicon via, microwave loss, s parameters

This thesis is to study the distribution system loss by applying artificial neural networks(ANN). To enhance the efficiency of loss analysis, the distribution system network has been obtained by retrieving that component information for the automated mapping and facility management system (AM/FM). The topology process and node reduction has also been applied to identify the network configuration and the input data for load flow analysis. The load survey study is used to derive the typical load patterns of various customer losses. The monthly energy consumption of customers by each transformer, which has been retrieved for the customer information system(CIS), is used to derive the hourly loading of each distribution transformer. The three phase load flow analysis has been performed for different types of distribution feeders to solve feeder loss to generate the data set for the training and testing of neural networks. The ANN for distribution loss analysis, which has been obtained after network training, can solve the distribution system loss very efficiently according to the feeder load demand, length, transformer capacity and voltage level. With short feeder length and voluminous customers served by the distribution feeders in urban area, the transformer core loss and secondary line loss contribute most of the distribution feeder loss. On the other hand, the line loss of rural distribution feeder is more significant because of the longer distribution lines to serve more scattering customers. With the neural based distribution system loss modeling, the distribution system loss can be estimated very easily, which can provide Taipower a good reference to enhance the operation efficiency of distribution system.

No description available.

Because compact solid-state blue/green lasers can generate high power, and short wavelength radiation, it is applied in micromaching, laser display, underwater ranging, and so forth. It is a very cost-effective approach to develop such lasers, if the laser output characteristics can be estimated precisely using software simulation. The purpose of this study is to use an optics software GLAD (General Laser Analysis and Design) to model our intracavity frequency-doubled blue/green lasers. The GLAD software considers the wave nature of laser, such as dispersion and diffraction. Moreover, it employs a modular design in modeling linear or nonlinear optical components. In order to get more precised estimation of the laser output characteristics of a quasi-three-level laser, the laser model in GLAD was modified to take into account the reabsorption loss in gain medium. In our experiment, blue/green microchip lasers were developed. We used a 3W LD to pump a quasi-three-level laser with the Nd:YAG crystal as gain medium and KNbO3 crystal as the intracavity SHG crystal for the generation of blue laser. The laser generates 17.6 mW of blue power with a cavity length of 4 mm. With almost the same structure except using Nd:YVO4 crystal as gain medium and KTP crystal as the intracavity SHG crystal for generation of green laser, the laser produces 627 mW of green power with a cavity length of 6 mm.

Customer load characteristics provides very critical information for power system operation. The accuracy of load forecasting and the effective cases of system generation and network planning can be enhanced by the investigation of customer load characteristics. In this thesis, the intelligent meters have been used to collect the power consumption within each 15 minutes of study customers, which have been selected by stratified sampling method. The typical load patterns of each customer class have been derived. The load composition and the power system load profile of Fengshan District in Taipower have been solved by the typical load patterns and the power consumption of each custom class. To investigate the distribution system reliability, the service territory of Fengshan district is divided into six service areas. The forecasting of yearly peak loadings for each area over the future 20 years is performed by the time series method based on the historical load data and load characteristics. By using the forced outage rate ¡]FOR¡^ of main transformers in the substations, the loss of load expectation¡]LOLE¡^ which corresponds to yearly peak loading of each service area is solved. By this way, the capacity expansion planning of main transformers to meet the service reliability can therefore be derived. To further enhance the distribution system planning, the capacity transfer capability of main transformers and the tie line flow capacity between different areas are considered too. It is found that the expansion planning of main transformers by the proposed methodology can provide better cost effectiveness of transformer investment to satisfy the service reliability as well as the system peak loading.

In this thesis, it mainly studies the performance characteristics of the bending losses in semiconductor waveguides and the quantum dots semiconductor optical amplifier. We used InP-subtract and InGaAlAs /InAlAs multiple quantum wells epitaxial wafer grown by MBE as our material(£fg=1.41£gm). We had successfully fabricated a series of bending strip-loaded waveguides. On the quantum dots semiconductor optical amplifier, symmetric InGaAlAs/GaAs quantum well structure is used to fabricate the optical waveguide. We have established an automatic optical measurement system to measure the device characteristics more accurately. Design respect of bending waveguide, we design a series of radius, is 60£gm, 80£gm, 110£gm, 170£gm,and 260£gm respectively, and utilize Fabry-Perot resonant, measurement and estimate the loss of bending waveguide in quantity. We find the bending waveguide loss as radius for 260£gm and contain deeply etching process was quite equal to straight waveguide loss. On the quantum dots semiconductor optical amplifier, we design a single mode waveguide and a broad area waveguide to compare the difference of their electron-hole combination situation. A single mode waveguide with longer cavity length had better combination situation than shorter (C311 of cavity length 4000£gm ,0.00066£gW *A/cm2). And the broad area waveguide had more better combination situation to single mode waveguide (C311 of cavity width 150£gm, length 4000£gm , 0.0966£gW *A/cm2). For the gain to the pump signal, C311 singe mode waveguide (emission peak:1211nm,pump signal:1260nm) could get a gain about 3.56dB¡Fand C374 singe mode waveguide (emission peak:1255nm,pump signal:1260nm) could get a gain about 6.1dB.

Thesis (Ph. D.)--University of Washington, 2000. / Vita. Includes bibliographical references (leaves 131-133).

Thesis (M.S.)--Rutgers University, 2009. / "Graduate Program in Nutritional Sciences." Includes bibliographical references (p. 42-49).

Thesis--PlanB (M.S.)--University of Wisconsin--Stout, 2001. / Includes bibliographical references.

Thesis (M.A.)--York University, 1997. Graduate Programme in Psychology. / Typescript. Includes bibliographical references (leaves 118-126). Also available on the Internet. MODE OF ACCESS via web browser by entering the following URL http://wwwlib.umi.com/cr/yorku/fullcit?pMQ27380.