<p>This thesis discusses design of narrowband low noise amplifiers for multi¬standard applications. The target of this work is to design a low noise ampli¬fier(LNA) for DCS1800 and Bluetooth standard frequency bands. Various designs for narrowband multi-standard LNAs have been studied and a new design for tunable multi-standard LNA has been presented and designed using accumulation mode MOS varactors.</p><p>As this design includes on-chip spiral inductors, the design, modelling and layout of on-chip inductors have been discussed briefly. The tool used for this purpose is ASITIC.</p><p>Also ESD protection techniques for RF circuits and their effect on LNA per¬formance has been discussed.</p><p>Finally fully differential LNA has been designed in O.35um AMS thick metal CMOS process using Cadence SpectreRF. The design also includes ESD pro¬tection at the input of LNA.</p>

Advances toward increased integration and complexity of radio frequency (RF) andmixed-signal integrated circuits reduce the effectiveness of contemporary testmethodologies and result in a rising cost of testing. The focus in this research is on thecircuit-level implementation of alternative test strategies for integrated wirelesstransceivers with the aim to lower test cost by eliminating the need for expensive RFequipment during production testing.The first circuit proposed in this thesis closes the signal path between the transmitterand receiver sections of integrated transceivers in test mode for bit error rate analysis atlow frequencies. Furthermore, the output power of this on-chip loopback block wasmade variable with the goal to allow gain and 1-dB compression point determination forthe RF front-end circuits with on-chip power detectors. The loopback block is intendedfor transceivers operating in the 1.9-2.4GHz range and it can compensate for transmitterreceiveroffset frequency differences from 40MHz to 200MHz. The measuredattenuation range of the 0.052mm2 loopback circuit in 0.13µm CMOS technology was 26-41dB with continuous control, but post-layout simulation results indicate that theattenuation range can be reduced to 11-27dB via optimizations.Another circuit presented in this thesis is a current generator for built-in testing ofimpedance-matched RF front-end circuits with current injection. Since this circuit hashigh output impedance (>1k up to 2.4GHz), it does not influence the input matchingnetwork of the low-noise amplifier (LNA) under test. A major advantage of the currentinjection method over the typical voltage-mode approach is that the built-in test canexpose fabrication defects in components of the matching network in addition to on-chipdevices. The current generator was employed together with two power detectors in arealization of a built-in test for a LNA with 14% layout area overhead in 0.13µm CMOStechnology (<1.5% for the 0.002mm2 current generator). The post-layout simulationresults showed that the LNA gain (S21) estimation with the external matching networkwas within 3.5% of the actual gain in the presence of process-voltage-temperaturevariations and power detector imprecision.

In this Master's thesis, a direct-conversion receiver front-end has been designed in a 0.18um CMOS technology. Direct-conversion receivers (DCR) have obvious advantages over the heterodyne counterpart. Since the intermediate frequency (IF) is zero, the problem of image is circumvented. As a result, no front-end image reject filter is required and the channel selection requires only a low-pass filter, which makes it easy to integrate directly on chip. However, the DCR also suffers from several drawbacks such as extreme sensitivity to DC offsets, 1/f noise, local oscillator (LO) leakage/radiation, front-end nonlinearity and I/Q mismatch. This implies very high demands on the DCR front-end. The front-end comprises a low-noise amplifier (LNA) and a mixer. Different LNA and mixer architectures has been studied and from the mentioned inherited problems with direct conversion, one proposal for a solution is a differential source degenerated LNA and a differential harmonic mixer, which has been designed and simulated. The LNA has a gain of 12dB, a noise figure of 3.6dB and provides a return loss better than -15dB. The overall noise figure of the signal path is 8dB and the overall IIP3 and IIP2 is -12dBm and 31dBm, respectively.

This master thesis deals with the study of ultra low power Low Noise Amplifier (LNA) for use inmedical implant device. Usually, low power consumption is required for a long battery lifetime andlonger operation. The target technology is 90nm CMOS process.First basic principle of LNA is discussed. Then based on a literature review of LNA design, theproposed LNA is presented in sub-threshold region which reduce power consumption through scalingthe supply voltage and through scaling current.The circuit implementation and simulations is presented to testify the performance of LNA .Besides thepower consumption simulated under the typical supply voltage (1V), it is also measured under someother low supply voltages (down to 0.5V) to investigate the minimum power consumption and theminimum noise figure. Evaluation results show that at a supply voltage of 1V the LNA performs a totalpower consumption of 20mW and a noise of 1dB. Proper performance is achieved with a current ofdown to 200uA and supply voltage of down to 0.45V, and a total power consumption of 200uW

In modern medicine, the measurement of electrophysiological signals play a key role in health monitoring and diagnostics. Electrical activity originating from our nerve and muscle cells conveys real-time information about our current health state. The two most common and actively used techniques for measuring such signals are electrocardiography (ECG) and electroencephalography (EEG). These signals are very weak, reaching from a few millivolts down to tens of microvolts in amplitude, and have the majority of the power located at very low frequencies, from below 1 Hz up to 40 Hz. These characteristics sets very tough requirements on the electrical circuit designs used to measure them. Usually, measurement is performed by attaching electrodes with direct contact to the skin using an adhesive, conductive gel to fixate them. This method requires a clinical environment and is time consuming, tedious and may cause the patient discomfort. This thesis investigates another method for such measurements; by using a non-contact, capacitively coupled sensor, many of these shortcomings can be overcome. While this method relieves some problems, it also introduces several design difficulties such as: circuit noise, extremely high input impedance and interference. A capacitively coupled sensor was created using the bottom layer of a printed circuit board (PCB) as a capacitor plate and placing it against the signal source, that acts as the opposite capacitor plate. The PCB solder mask layer and any air in between the two acts as the insulator to create a full capacitor. The signal picked up by this sensor was then amplified by 60 dB with a high input impedance amplifier circuit and further conditioned through filtering. Two measurements were made of the same circuit, but with different input impedances; one with 10 MΩ and one with 10 GΩ input impedance. Additional filtering was designed to combat interference from the main power lines at 50 Hz and 150 Hz that was discovered during initial measurements. The circuits were characterized with their transfer functions, and the ability to amplify a very low-level, low frequency input signal. The results of these measurements show that high input impedance is of critical importance for the functionality of the sensor and that an input impedance of 10 GΩ is sufficient to produce a signal-to-noise ratio (SNR) of 9.7 dB after digital filtering with an input signal of 25 μV at 10 Hz.

This thesis discusses design of narrowband low noise amplifiers for multi¬standard applications. The target of this work is to design a low noise ampli¬fier(LNA) for DCS1800 and Bluetooth standard frequency bands. Various designs for narrowband multi-standard LNAs have been studied and a new design for tunable multi-standard LNA has been presented and designed using accumulation mode MOS varactors. As this design includes on-chip spiral inductors, the design, modelling and layout of on-chip inductors have been discussed briefly. The tool used for this purpose is ASITIC. Also ESD protection techniques for RF circuits and their effect on LNA per¬formance has been discussed. Finally fully differential LNA has been designed in O.35um AMS thick metal CMOS process using Cadence SpectreRF. The design also includes ESD pro¬tection at the input of LNA.

The integration of mixed-signal systems has long been a problem in the semiconductor industry. CMOS System-on-Chip (SOC), the traditional means for integration, fails mixed-signal systems on two fronts; the lack of on-chip passives with high quality (Q) factors inhibits the design of completely integrated wireless circuits, and the noise coupling from digital to analog circuitry through the conductive silicon substrate degrades the performance of the analog circuits. Advancements in semiconductor packaging have resulted in a second option for integration, the System-On-Package (SOP) approach. Unlike SOC where the package exists just for the thermal and mechanical protection of the ICs, SOP provides for an increase in the functionality of the IC package by supporting multiple chips and embedded passives. However, integration at the package level also comes with its set of hurdles, with significant research required in areas like design of circuits using embedded passives and isolation of noise between analog and digital sub-systems. A novel multiband balun topology has been developed, providing concurrent operation at multiple frequency bands. The design of compact wideband baluns has been proposed as an extension of this theory. As proof-of-concept devices, both singleband and wideband baluns have been fabricated on Liquid Crystalline Polymer (LCP) based organic substrates. A novel passive-Q based optimization methodology has been developed for chip-package co-design of CMOS Low Noise Amplifiers (LNA). To implement these LNAs in a mixed-signal environment, a novel Electromagnetic Band Gap (EBG) based isolation scheme has also been employed. The key contributions of this work are thus the development of novel RF circuit topologies utilizing embedded passives, and an advancement in the understanding and suppression of signal coupling mechanisms in mixed-signal SOP-based systems. The former will result in compact and highly integrated solutions for RF front-ends, while the latter is expected to have a significant impact in the integration of these communication devices with high performance computing.

Spintronics, an abbreviation of spin based electronics and also known as magneto electronics, has attracted a lot of interest in recent years. It aims to explore the role of electrons’ spins in building next generation electric devices. Using electrons’ spins rather than electrons’ charges may allow faster, lower energy cost devices. Spin Hall Effect is an important subfield of spintronics. It studies spin current, spin transport, and spin accumulation in paramagnetic systems. It can further understanding of quantum physics, device physics, and may also provide insights for spin injection, spin detection and spin manipulation in the design of the next generation spintronics devices. In this experimental work, two sets of experiments were prepared to detect the Spin Hall Effect in metallic systems. The first set of experiments aims to extract Spin Hall Effect from Double Hall Effect in micrometer size metal thin film patterns. Our experiments proved that the Spin Hall Effect signal was much smaller than the theoretically calculated value due to higher electrical resistivity in evaporated thin films. The second set of experiments employs a multi-step process. It combines micro fabrication and electrochemical method to fabricate a perpendicular ferromagnet rod as a spin injector. Process description and various techniques to improve the measurement sensitivity are presented. Measurement results in aluminum, gold and copper are presented in Chapters III, IV and V. Some new experiments are suggested in Chapters V and VI.

Advances toward increased integration and complexity of radio frequency (RF) andmixed-signal integrated circuits reduce the effectiveness of contemporary testmethodologies and result in a rising cost of testing. The focus in this research is on thecircuit-level implementation of alternative test strategies for integrated wirelesstransceivers with the aim to lower test cost by eliminating the need for expensive RFequipment during production testing.The first circuit proposed in this thesis closes the signal path between the transmitterand receiver sections of integrated transceivers in test mode for bit error rate analysis atlow frequencies. Furthermore, the output power of this on-chip loopback block wasmade variable with the goal to allow gain and 1-dB compression point determination forthe RF front-end circuits with on-chip power detectors. The loopback block is intendedfor transceivers operating in the 1.9-2.4GHz range and it can compensate for transmitterreceiveroffset frequency differences from 40MHz to 200MHz. The measuredattenuation range of the 0.052mm2 loopback circuit in 0.13µm CMOS technology was 26-41dB with continuous control, but post-layout simulation results indicate that theattenuation range can be reduced to 11-27dB via optimizations.Another circuit presented in this thesis is a current generator for built-in testing ofimpedance-matched RF front-end circuits with current injection. Since this circuit hashigh output impedance (>1k up to 2.4GHz), it does not influence the input matchingnetwork of the low-noise amplifier (LNA) under test. A major advantage of the currentinjection method over the typical voltage-mode approach is that the built-in test canexpose fabrication defects in components of the matching network in addition to on-chipdevices. The current generator was employed together with two power detectors in arealization of a built-in test for a LNA with 14% layout area overhead in 0.13µm CMOStechnology (<1.5% for the 0.002mm2 current generator). The post-layout simulationresults showed that the LNA gain (S21) estimation with the external matching networkwas within 3.5% of the actual gain in the presence of process-voltage-temperaturevariations and power detector imprecision.

Today, the advances in Complementary MetalOxideSemiconductor (CMOS) technology have guided the progress in the wireless communications circuits and systems area. Various new communication standards have been developed to accommodate a variety of applications at different frequency bands, such as cellular communications at 900 and 1800 MHz, global positioning system (GPS) at 1.2 and 1.5 GHz, and Bluetooth andWiFi at 2.4 and 5.2 GHz, respectively. The modern wireless technology is now motivated by the global trend of developing multi-band/multistandard terminals for low-cost and multifunction transceivers. Exploring the unused 10-66 GHz frequency spectrum for high data rate communication is also another trend in the wireless industry. In this dissertation, the challenges and solutions for designing a multi-band/multistandard mobile device is addressed from system-level analysis to circuit implementation. A systematic system-level design methodology for block-level budgeting is proposed. The system-level design methodology focuses on minimizing the power consumption of the overall receiver. Then, a novel millimeter-wave dual-band receiver front-end architecture is developed to operate at 24 and 31 GHz. The receiver relies on a newly introduced concept of harmonic selection that helps to reduce the complexity of the dual-band receiver. Wideband circuit techniques for millimeterwave frequencies are also investigated and new bandwidth extension techniques are proposed for the dual-band 24/31 GHz receiver. These new techniques are applied for the low noise amplifier and millimeter-wave mixer resulting in the widest reported operating bandwidth in K-band, while consuming less power consumption. Additionally, various receiver building blocks, such as a low noise amplifier with reconfigurable input matching network for multi-band receivers, and a low drop-out regulator with high power supply rejection are analyzed and proposed. The low noise amplifier presents the first one with continuously reconfigurable input matching network, while achieving a noise figure comparable to the wideband techniques. The low drop-out regulator presented the first one with high power supply rejection in the mega-hertz frequency range. All the proposed building blocks and architecture in this dissertation are implemented using the existing silicon-based technologies, and resulted in several publications in IEEE Journals and Conferences.