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The Global ETD Search service is a free service for researchers
to find electronic theses and dissertations. This service is
provided by the
Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
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Showing 101 to 110 of 1083 (0.036 seconds)Spelling suggestions: "subject:"metal oxide"" "subject:"fetal oxide""
| 101 |
Semiclassical Monte Carlo simulation of nano-scaled semiconductor devicesGhosh, Bahniman, 1971- 18 August 2011 (has links)
Not available / text
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| 102 |
Novel channel materials for Si based MOS devices : Ge, strained Si and hybrid crystal orientationsJoshi, Sachin Vineet, 1981- 23 August 2011 (has links)
Not available / text
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| 103 |
Investigation of inversion layer mobility in N-channel mosfets with thin gate oxide陳添華, Chan, Tim-wah. January 1984 (has links)
published_or_final_version / Electrical Engineering / Master / Master of Philosophy
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| 104 |
Electrical reliability of N-Mos devices with N2O-based oxides as gate dielectricsZeng, Xu, 曾旭 January 1996 (has links)
published_or_final_version / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy
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| 105 |
Single donor detection in silicon nanostructuresGonzález Zalba, Miguel Fernando January 2013 (has links)
No description available.
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| 106 |
Tungsten Doped Tantalum Oxide Anodes for Electrochemical Disinfection of WastewaterHolladay, Siobhan 29 November 2012 (has links)
Tungsten doped tantalum oxide films on titanium substrates were investigated for use as anodes in the electrochemical disinfection of wastewater (measured through e. coli inactivation). A sol-gel method for fabricating these films was developed that allowed for control of both the doping concentration (through volumes of tantalum and tungsten ethoxide added to the solutions), and the thickness (through the number of layers applied). The morphology and composition of these films were investigated using SEM and EDX mapping; the morphology was found to be connected to the fabrication heating procedure. Three different doping concentrations (0%, 8% and 14% tungsten by volume of added metals) were investigated for: 1) electrochemical activity; 2) long-term stability; and 3) disinfection capabilities. The 14% samples demonstrated the highest conductivity (0.06μS/cm), good long-term stability (verified using ICPMS, SEM and EDX analysis) and the best electrochemical activity for removal of e. coli (based on wastewater tests).
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| 107 |
Tungsten Doped Tantalum Oxide Anodes for Electrochemical Disinfection of WastewaterHolladay, Siobhan 29 November 2012 (has links)
Tungsten doped tantalum oxide films on titanium substrates were investigated for use as anodes in the electrochemical disinfection of wastewater (measured through e. coli inactivation). A sol-gel method for fabricating these films was developed that allowed for control of both the doping concentration (through volumes of tantalum and tungsten ethoxide added to the solutions), and the thickness (through the number of layers applied). The morphology and composition of these films were investigated using SEM and EDX mapping; the morphology was found to be connected to the fabrication heating procedure. Three different doping concentrations (0%, 8% and 14% tungsten by volume of added metals) were investigated for: 1) electrochemical activity; 2) long-term stability; and 3) disinfection capabilities. The 14% samples demonstrated the highest conductivity (0.06μS/cm), good long-term stability (verified using ICPMS, SEM and EDX analysis) and the best electrochemical activity for removal of e. coli (based on wastewater tests).
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| 108 |
CMOS digital circuit test generation for transistor level and gate-level implementationKim, Dong-Wook 08 1900 (has links)
No description available.
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| 109 |
A quasi-monolithic optical receiver using a standard digital CMOS technologyLee, Myunghee 05 1900 (has links)
No description available.
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| 110 |
A high speed, high resolution, self-clocked voltage comparator in a standard digital CMOS processDowlatabadi, Ahmad Baghai 05 1900 (has links)
No description available.
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