Global ETD Search

71	Physics and technology of high mobility, strained germanium channel, heterostructure MOSFETs Krishnamohan, Tejas. January 2006 (has links) (PDF) Thesis (Ph.D.)--Stanford University, 2006. / Adviser: Krishna C. Saraswat. Includes bibliographical references (p. 160-177)
72	Semiclassical Monte Carlo simulation of nano-scaled semiconductor devices 28 August 2008 (has links) Not available
73	Novel channel materials for Si based MOS devices: Ge, strained Si and hybrid crystal orientations 28 August 2008 (has links) Not available Silicon
74	Time domain CMOS image sensor : from photodetection to on-chip image processing / Chen, Shoushun. January 2007 (has links) Thesis (Ph.D.)--Hong Kong University of Science and Technology, 2007. / Includes bibliographical references (leaves 135-145). Also available in electronic version.
75	Complementary orthogonal stacked metal oxide semiconductor a novel nanoscale complementary metal oxide semiconductor architecture / Al-Ahmadi, Ahmad Aziz. January 2006 (has links) Thesis (Ph.D.)--Ohio University, June, 2006. / Title from PDF t.p. Includes bibliographical references (p. [69]-[78])
76	Current-feedthrough cancellation techniques in switched-current circuits Lao, Paul A. 06 August 1990 (has links) Graduation date: 1991 Switched capacitor circuits
77	Fully-differential current-mode CMOS circuits and applications Zele, Rajesh H. 02 August 1990 (has links) With increasing interest in current-mode analogue processing due to its high performance properties such as speed, bandwidth and accuracy compared to voltage-mode processing, new current-mode alternatives to various conventional circuit designs are appearing. In this report, a novel circuit design to construct a fully-differential current-mode operational amplifier ( OP-AMP ) is suggested. A standard CMOS process and a 5 volt power supply are utilized. Simulation results using SPICE are presented. For the current-amplifier, a highly linear behavior ( THD 0.02% ) and an excellent frequency response ( 10 MHz ) were observed. Using this new differential OP-AMP topology, fully-differential switched-current delay cell and an integrator circuit were also developed successfully. / Graduation date: 1991 Electronic circuit design
78	Comparison and analysis of current-mode logic circuits with differential and static CMOS Shrivastava, Manu B. 07 February 1994 (has links) This thesis describes the analysis and comparison of Folded Source-Coupled Logic (FSCL) with standard static CMOS, cascode voltage-switch logic and differential split-level logic gates. The advantages of FSCL are low switching noise and high operating speed. The effect of voltage and device scaling on these topologies is evaluated in terms of average delay, power dissipation at maximum frequency, power-delay-product and current spike noise. Several two-summand adders are designed and simulated using MOSIS 1-μm CMOS process parameters and evaluations are performed in terms of area, delay, noise and power dissipation. / Graduation date: 1994
79	Characterization of oxygen and carbon effects in silicon material and MOSFET devices Haddad, Homayoon 20 February 1990 (has links) Graduation date: 1990 Silicon
80	High frequency voltage controlled ring oscillators in standard CMOS Eken, Yalcin Alper 07 June 2004 (has links) No description available. Metal oxide semiconductors Complementary Oscillators Crystal

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