The graphene-polymer SA thin film using solution blending method and atomic layer graphene as saturable absorber (SA) used to generate femtosecond laser pulse were measured. Stable soliton-like pulses with the pulsewidth of 403 fs and 432 fs, the spectral linewidth of 6.32 nm and 6.16 nm, and the time-bandwidth product of 0.315 and 0.329 using graphene-PVA film and atomic layer graphene as SA were achieved, respectively, in mode-locked Er-doped fiber ring laser. The graphene-PVA SA suffered from larger loss caused by graphene flake aggregating, while the atomic layer graphene had smaller nonsaturable loss which exhibited lower mode locking threshold power. Atomic layer graphene also had stable fabricated process and controllable modulation depth depended on its layer numbers. To compare the mode locking performance of single wall carbon nanotubes (SWCNTs) and graphene SA, the same solution blending fabricated sample was used. Under similar nonsaturable loss and modulation depth, the SWCNTs SA with optimized concentration of 0.5wt% and thickness of 188£gm had shortest pulsewidth of 440 fs and 3-dB spectral linewidth of 6 nm. The shortest pulsewidth of 403 fs and broad spectral linewidth of 6.32 nm was obtained using graphene SA with concentration of 6.25wt% and thickness of 18£gm. Graphene has broad band absorbance and larger modulation depth, the experimental result indicates that graphene SA can generate shorter pulse and has chance to become the potential candidate of SA.

Solid-state lasers are capable of providing versatile output characteristics with greater flexibility compared to other popular laser systems. Lasing action has been achieved in many hundreds of solid-state media, but Nd-ion doped gain media are widely used to reach high power levels with short pulses. In this work, commercially available Nd:KGW crystal served as a gain medium to achieve pulsed operation at 1067 nm. This laser crystal offers large stimulated emission crosssection and gain bandwidth which facilitates generation of high peak power pulses in the picosecond regime. The KGW crystal is monoclinic and biaxial in structure, and anisotropic in its optical and thermal properties. Due to poor thermal conductivity, this crystal can be operated within a limited power range before crystal fracture takes place. To reduce the amount of heat deposited in the gain media, we introduced a new pumping wavelength of 910 nm which reduces the quantum defect by more than 45%. Continuous-wave laser operation was optimized to operate in mode-locked regime. In order to achieve short light pulses from the continuous-wave laser, one of the end mirrors was replaced by a semiconductor saturable absorber mirror (SESAM) to generate 2.4 ps pulses at a repetition rate of 83.8 MHz. An average output power of 87 mW was obtained at lasing wavelength of 1067 nm and the beam was nearly diffraction limited with M^2 < 1.18. The peak power of the generated pulses was 427 W and energy of each pulse was >1 nJ. Pumping the crystal at longer wavelength (910 nm) reduced the thermal lensing of the crystal by half when compared to conventional pumping at shorter wavelength (808 nm). To the best of our knowledge, this is the first time passive mode-locking of a Nd:KGW laser was explored using the pump wavelength at 910 nm. / February 2017

This master thesis presents an experimental design of a laser gyroscope based on a stabilized fiber optical parametric oscillator frequency comb and the results of testing of the proposed design. Before going into the experimental details, a background for different types of gyroscopes is discussed. This new laser gyroscope design is made up of only polarization maintaining (PM) fiber and PM fiber components. By using only fiber and fiber components, we were able to minimize size, weight, and alignment issues that are typical in bulk optical designs for OPO's and gyroscopes. The fiber-based OPO produces counter propagating ultrafast pulses that overlap only twice in the cavity, resulting in a beatnote signal when combined outside of the laser cavity. A mode-locked laser is used as a pump source so the lock-in effect (or deadband region) is avoided for the experiment. The drift of this beatnote signal represents the rotation sensitivity of the experimental setup. Issues seen in past iterations, such as stability of mode-locked pump source and beatnote drift overtime due to environmental variables, have been reduced in this experiment. This has been done by comprising the entire pump source of PM components, and by placing the entire setup in an insulating box to minimize acoustic and temperature fluctuations. By creating a frequency comb and locking the laser gyroscope to an optical clock, this experiment can be used for very precise rotation sensing in comparison to other gyro designs currently available.

Coherent nonlinear effects such as Electromagnetically Induced Transparency (EIT), Coherent Population Trapping (CPT), and Slow light are studied in thermal Rb vapor by both continuous and pulsed laser fields. This work primarily includes three parts: (I) mode-locked rubidium laser and its applications (II) enhanced coupling between optical and sound waves in the forward direction via ultra-slow light (III) optical steering via ultra-slow light in rubidium vapor. In part(I), I describe the construction and study of a mode-locked rubidium laser operating at the Rb D1 line using an active mode-locking technique inside the laser cavity. The mode-locked laser field is used to observe coherent effects in a dense rubidium gas. In part(II), I experimentally demonstrate enhanced acoustic-optic coupling that occurs when the velocity of sound is close to the group velocity of light. Dragging of the light by effective motion of the gas in a Rb cell is the origin of enhanced coupling. Good agreement between theory and experiment is found. In part(III), I experimentally demonstrate optical beam deflection in coherently driven rubidium vapor due to the steep refraction index profile in the region of EIT.

In this dissertation, a novel semiconductor mode-locked oscillator which is an extension of eXtreme Chirped Pulse Amplification (XCPA) is investigated. An eXtreme Chirped Pulse Oscillator (XCPO) implemented with a Theta cavity also based on a semiconductor gain is presented for generating more than 30ns frequency-swept pulses with more than 100pJ of pulse energy and 3.6ps compressed pulses directly from the oscillator. The XCPO shows the two distinct characteristics which are the scalability of the output energy and the mode-locked spectrum with respect to repetition rate. The laser cavity design allows for low repetition rate operation < 100MHz. The cavity significantly reduces nonlinear carrier dynamics, integrated self phase modulation (SPM), and fast gain recovery in a Semiconductor optical Amplifier (SOA). Secondly, a functional device, called a Grating Coupled Surface Emitting Laser (GCSEL) is investigated. For the first time, passive and hybrid mode-locking of a GCSEL is achieved by using saturable absorption in the passive section of GCSEL. To verify the present limitation of the GCSEL for passive and hybrid mode-locking, a dispersion matched cavity is explored. In addition, a Grating Coupled surface emitting Semiconductor Optical Amplifier (GCSOA) is also investigated to achieve high energy pulse. An energy extraction experiment for GCSOA using stretched pulses generated from the colliding pulse semiconductor mode-locked laser via a chirped fiber bragg grating, which exploits the XCPA advantages is also demonstrated. Finally, passive optical cavity amplification using an enhancement cavity is presented. In order to achieve the interferometric stability, the Hänsch-Couillaud Method is employed to stabilize the passive optical cavity. The astigmatism-free optical cavity employing an acousto-optic modulator (AOM) is designed and demonstrated. In the passive optical cavity, a 7.2 of amplification factor is achieved with a 50 KHz dumping rate.

Dans un premier temps, nous avons optimisé des structures laser VECSEL dans le but de maximiser la puissance émise par une gestion thermique adéquate. Les structures conçues et fabriquées contiennent une zone active à base d’InP pour l’émission à 1.55 µm. Un miroir hybride métal- semiconducteur à base d’un miroir de Bragg GaAs/AlAs est intégré à la zone active. La structure semiconductrice est intégrée avec différents substrats hôtes de bonne conductivité thermique sur la base de simulations numériques, et les performances des dispositifs fabriqués sont évaluées expérimentalement sous pompage optique Les VECSELs intégrés sur substrat diamant CVD présentent les puissances de sortie les plus élevées, et sont de bons candidats pour l’émission de puissance (> 500 mW) à 1.55 µm et pour les expériences de blocage de modes. D’un autre côté nous montrons que l’intégration d’un substrat de cuivre par voie électrochimique représente une approche flexible et faible-coût, pour atteindre une puissance de sortie de plusieurs dizaines de mW jusqu’à ~ 200 mW.Dans un second temps, nous avons développé des SESAMs à 1.55 µm. La région active est formée de puits quantiques InGaAsN/GaAs, couplés par effet tunnel à des plans GaAsN à recombinaison rapide. Des temps caractéristiques de recouvrement de l’absorption de quelques picosecondes à la dizaine de picoseconde sont ainsi mesurés.La résonance de la microcavité SESAM est ajustée de manière contrôlée grâce à des couches de phase spécifques épitaxiées en surface de la structure. La gravure sélective couche par couche des couches de phase permet d’accorder la profondeur de modulation et la dispersion de vitesse de groupe (GDD) de la structure SESAM.Finalement nous avons assemblé les structures SESAM et VECSEL dans une cavité à quatre miroirs pour obtenir un fonctionnement laser en régime de blocage de modes passif. Nous observons que la durée de l’impulsion de blocage de modes peut être réduite de plusieurs picosecondes (~ 10 ps), jusqu’à moins de la picoseconde (0.9 ps) en accordant la GDD de la structurre SESAM. / In a first step, we have developed and implemented VECSEL structures, aiming at maximizing the laser output power through a proper thermal management. The fabricated VECSEL chips contain an InP-based active region for emission at 1.55 µm. A hybrid metal-GaAs/AlAs Bragg mirror is used to achieve efficient dissipation of the heat generated in the active region. The semiconductor structure is integrated to various host substrates and the VECSEL performances are investigated numerically and experimentally. VECSELs with CVD diamond substrates have the best overall performance and are promising for large output power (> 500 mW), while electroplated copper substrate is demonstrated to be a flexible and cost-effective approach for thermal management in 1.55 µm OP-VECSEL in order to achieve output power of several tens of mW to ~ 200 mW. The second part of the work is devoted to the development of SESAM structures at 1.55 µm. The structures include an active region consisting of InGaAsN / GaAs quantum wells surrounding by GaAsN planes, allowing to achieve absorption relaxation time of few picoseconds. The SESAM microcavity resonance was adjusted via a selective etching of phase layers specifically designed to control the magnitude of both the modulation depth and the intra cavity group delay dispersion of the device.Finally, assembling VECSEL and SESAM chips in a cavity, we observe experimentally that the mode-locked pulse duration could be reduced from several picoseconds to less than one picosecond when the resonance and group delay dispersion of the SESAM microcavity are tuned.

L’objectif de la thèse concerne le développement de lasers à semi-conducteur à blocage de modes qui présentent un grand intérêt pour les systèmes de télécommunications optiques à très haut débit (WDM, OTDM, radio sur fibre…).Les nanostructures à base de boites quantiques (BQs) possèdent des propriétés remarquables grâce au confinement 0D des porteurs de charge. Leur utilisation dans les lasers à blocage de modes a donné lieu à des avancées importantes en terme de génération d’impulsions très courtes à haute fréquence et avec un très faible niveau de bruit.Durant la thèse, une optimisation de la croissance des structures lasers à BQs InAs sur substrat InP(113)B a été menée afin d’accroître le nombre de plans de BQs tout en assurant une forte densité pour maximiser le gain modal. Le travail a également porté sur l’utilisation de substrats InP(001) désorienté et l’obtention d’empilement de plans de BQs de faible anisotropie. Une optimisation de la technologie des lasers monomode de type « shallow-ridge » a été réalisée sur substrat conventionnel InP (001). Nous avons confirmé l’intérêt des BQs pour améliorer l’efficacité d’injection grâce à une réduction de la diffusion latérale des porteurs. Le blocage de modes a été obtenue sur des lasers à mono-section et double sections à base de BQs InAs élaborés sur InP (001) désorienté et InP(113))B, à des fréquences de répétitions allant de 20 jusqu’à 83 GHz. Les spectres RF présentent des pics de faibles largeurs (jusqu’à 20 kHz) qui indique un faible bruit de phase. Enfin, une étude a été menée sur le comportement en température des lasers à blocage de modes passif à double sections à base de BQs ou de BatQs InAs/InP. / Semiconductor mode-locked lasers (MLLs) are at the centre of interest for a large range of photonic applications (WDM, OTDM, radio over fiber ...). Because of their outstanding performance coming from the 0D carrier confinement, the use of quantum dots (QDs) nanostructures as active material for MLLs has led to the generation of ultra-short and high frequency pulses with low noise. For the present thesis studies were carried out on InAs based QDs laser growth on InP (113)B in order to increase the number of stacked QDs layers while maintaining a high density of QDs to maximize modal gain. Work has also been focused on layers stacking and obtaining real QDs using misoriented (001) InP substrate. Structural qualities have been confirmed using AFM, polarized photoluminescence and broad laser characterization. A shallow ridge waveguide optimization technology has been realized on conventional (001) InP substrate. We have confirmed the improved injection efficiency of QDs due to lower lateral carrier diffusion. Mode-locking was obtained on single and two sections InAs based QDs lasers elaborated on (001) InP misoriented substrate and (113)B InP substrate, from 20 to 83 GHz. The RF linewidth at -3 dB is as low as 20 kHz indicating a ML regime with a low phase noise. Finally, we have studied the temperature effect on the QDs and QDashes InAs/InP multi-section MLLs.

The mode-locked laser diode (MLLD) finds a lot of use in applications such as ultra high-speed data processing and sampling, large-capacity optical fiber communications based on optical time-division multiplexing (OTDM) systems. Integrating mode-locked lasers on silicon makes way for highly integrated silicon based photonic communication devices. The mode-locked laser being used in this thesis was built with Hybrid Silicon technology. This technology, developed by UC Santa Barbara in 2006, introduced the idea of wafer bonding a crystalline III- V layer to a Silicon-on-insulator (SOI) substrate, making integrated lasers in silicon chips possible. Furthermore, all mode-locked lasers produce phase noise, which can be a limiting factor in the performance of optical communication systems, specifically at higher bit rates. In this thesis, we design and discuss an impedance matching solution for a hybrid silicon mode-locked laser diode to lower phase noise and reduce the drive power requirements of the device. In order to develop an impedance matching solution, a thorough measurement and analysis of the impedance of the MLLD is necessary and was carried out. Then, a narrowband solution of two 0.1 pF chip capacitors in parallel is considered and examined as an impedance matching network for an operating frequency of 20 GHz. The hybrid silicon laser was packaged together in a module including the impedance- matching circuit for efficient RF injection. In conclusion, a 6 dB reduction of power required to drive the laser diode, as well as approximately a 10 dB phase noise improvement, was measured with the narrow-band solution. Also, looking ahead to possible future work, we discuss a step recovery diode (SRD) driven impulse generator, which wave-shapes the RF drive to achieve efficient injection. This novel technique takes into account the time varying impedance of the absorber as the optical pulse passes through it, to provide optimum pulse shaping.

Proprietary.

Master of Science / Department of Physics / Brian R. Washburn / This thesis reports our attempt towards achieving a phase stabilized free-space nonlinear polarization rotation (NPR) mode locked erbium doped fiber laser frequency comb system. Optical frequency combs generated by mode-locked femtosecond fiber lasers are vital tools for ultra-precision frequency metrology and molecular spectroscopy. However, the comb bandwidth and average output power become the two main limiting elements in the application of femtosecond optical frequency combs. We have specifically investigated the free-space mode locking dynamics of erbium-doped fiber (EDF) mode-locked ultrafast lasers via nonlinear polarization rotation (NPR) in the normal dispersion regime. To do so, we built a passively mode-locked fiber laser based on NPR with a repetition rate of 89 MHz producing an octave-spanning spectrum due to supercontinuum (SC) generation in highly nonlinear fiber (HNLF). Most significantly, we have achieved highly stable self-starting NPR mode-locked femtosecond fiber laser based frequency comb which has been running mode locked for the past one year without any need to redo the mode locking. By using the free-space NPR comb scheme, we have not only shortened the cavity length, but also have obtained 5 to 10 times higher output power (more than 30 mW at central wavelength of 1570 nm) and much broader spectral comb bandwidth (about 54 nm) compared to conventional all-fiber cavity structure with less than 1 mW average output power and only 10 nm spectral bandwidth. The pulse output from the NPR comb is amplified through a 1 m long EDF, then compressed by a length of anomalous dispersion fiber to a near transform limited pulse duration. The amplified transform limited pulse, with an average power of 180 mW and pulse duration of 70 fs, is used to generate a supercontinuum of 140 mW. SC generation via propagation in HNLF is optimized for specific polling period and heating temperature of PPLN crystal for SHG around 1030 nm. At last, we will also discuss the attempt of second harmonic generation (SHG) by quasi phase matching in the periodically polled lithium niobate (PPLN) crystal due to nonlinear effect corresponding to different polling period and heating temperature.