Introduzido na década de 1970, o glifosato figura entre os herbicidas mais consumidos em todo mundo. Devido a características como baixa toxicidade aguda a organismos não-alvo e alta eficiência na eliminação de plantas daninhas, o herbicida se tornou um sucesso de vendas, com um substancial incremento em sua utilização após o desenvolvimento de culturas geneticamente modificadas para tolerar o ingrediente ativo. O elevado consumo do glifosato vem se tornando uma preocupação para diferentes agências ambientais e de saúde. Consequentemente, métodos eficientes para a determinação e quantificação do herbicida se fazem necessários. Na presente dissertação, aprimorou-se um método que utiliza um sistema de análise de injeção sequencial por cromatografia líquida (SIC) com detecção por fluorescência para a determinação de glifosato e seu principal produto de degradação, o ácido aminometilfosfônico (AMPA), em amostras ambientais. Os limites de detecção (LD) e quantificação (LQ) para o glifosato foram 0,10 e 0,33 ԁmol L-1, respectivamente. Já para o AMPA, LD foi de 0,07 µmol L-1 e LQ de 0,22 µmol L-1. O método foi empregado na determinação das espécies em amostras de água fortificadas e gerou valores de recuperação entre 97,2 a 151,5% para o AMPA e 74,6 a 140,5% para o glifosato. Quando empregado em um estudo de adsorção-dessorção, o método foi capaz de produzir valores dos parâmetros de Freundlich e Langmuir comparáveis aos encontrados na literatura. Com qmax = 2,1 ± 0,1 µmol g-1 e KF = 0,53 ± 0,07 µmol1-1/n L1/n g-1, o Latossolo B se mostrou como o solo com maior capacidade de adsorver o glifosato. Em termos de dessorção, o percentual dessorvido ficou abaixo de 55% da quantidade inicialmente adsorvida para as concentrações trabalhadas. / Introduced in the 1970, glyphosate figures among the most used herbicides in the world. Due to characteristics such as low acute toxicity to non-target organisms and high efficiency regarding the elimination of weeds, the herbicide has experienced a huge success in terms of safes. Since genetically modified crops that tolerate the active ingredient have been developed, these safes have continued to increase. Glyphosate\'s high consumption has become a concern to different environmental and health agencies. As a result, efficient methods for the determination of glyphosate and its main metabolite, aminomethylphosphonic acid (AMPA), are necessary. This dissertation describes improvements in a sequential injection chromatography method for the determination of glyphosate and aminomethylphosphonic acid in environmental samples. The limits of detection (LOD) and quantification (LOQ) for glyphosate is 0.10 e 0.33 µmol L-1, respectively. LOD of 0.07 µmol L-1 and LOQ of 0,22 µmol L-1 is registered for AMPA. The method was employed for the determination of both species in spiked water samples and recovery values between 97.2 a 151.5% was obtained for AMPA and between 74.6 a 140.5% for glyphosate. When used in an adsorption-desorption study, the method was capable of generating values for the Freundlich and Langmuir parameters that are similar to those found in the scientific literature. With a qm\" of 2.1 ± 0.1 µmol g-1 and KF = 0.53 ± 0.07 µmol1-1/n L1/n g-1, Latossolo B was the soil sample with the largest glyphosate adsorption capacity. Regarding desorption, the percentages desorbed were beiow 55% of the initial mass of glyphosate adsorbed for the concentrations used.

Este trabalho apresenta um estudo sobre o transitório da corrente de dreno e métodos de extração de tempo de vida de geração em transistores SOI MOSFETs parcialmente depletados de porta simples, porta dupla e FinFETs de porta tripla. Este estudo foi baseado tanto em simulações numéricas bidimensionais como em dados experimentais extraídos a partir de transistores fabricados no IMEC (Interuniversity Microelectronics Center), que fica na Universidade Católica de Leuven (KUL) na Bélgica. Inicialmente foi analisada a influência da espessura do óxido de porta e da temperatura na extração do tempo de vida de geração dos portadores utilizando o transitório da corrente de dreno. Nesta análise, além do tempo de vida de portadores, outros parâmetros elétricos também foram estudados, como a tensão de limiar, o potencial de superfície na primeira interface e a energia de ativação para criação de um par elétron-lacuna. Com o estudo da influência dos parâmetros de processo no método de determinação do tempo de vida de geração foi possível propor um modelo simples para estimar o tempo de geração dos portadores em função da temperatura. Este modelo foi aplicado experimentalmente e comparado com resultados obtidos através de simulações apresentando um erro máximo de 5%. Fez-se uma análise detalhada do impacto da presença da região de implantação de HALO na extração do tempo de vida de geração baseando-se no transitório da corrente de dreno. Os resultados obtidos através deste estudo possibilitaram a proposta de um novo modelo. O modelo proposto considera tanto o impacto da lateralidade não uniforme da dopagem do canal no efeito de corpo flutuante, devido à presença das regiões de implantação de HALO, como também as cargas controladas pelas junções de fonte e dreno, o que até então não havia sido alvo de estudo na literatura. Com as novas considerações tornou-se possível à análise do transitório da corrente de dreno com a redução do comprimento de canal. A sensibilidade do novo modelo foi ensaiada com a variação de ± 20% nas concentrações da região de canal e de implantação de HALO resultando em um erro máximo de 9,2%. A maior eficiência do acoplamento da porta nos dispositivos de porta dupla, comparando com os de porta única, foi observada através do estudo do comportamento do potencial de corpo destas estruturas. Esta análise resultou na inserção de um parâmetro dependente da espessura do filme de silício, possibilitando a extrapolação do modelo proposto neste trabalho também para os dispositivos de porta dupla. Os resultados obtidos apresentaram um ajuste bastante satisfatório com a variação do comprimento de canal, temperatura e com a variação das concentrações de dopantes da região de canal e da região de implantação de HALO. Por fim, é apresentado um estudo sobre o transitório da corrente de dreno em dispositivos FinFETs de porta tripla, com e sem a região de implantação de HALO, considerando a variação da largura de canal. Através da análise da tensão de limiar, transcondutância e do transitório da corrente de dreno foi possível observar que os dispositivos sem a presença da região de implantação de HALO são mais susceptíveis a influência dos efeitos de corpo flutuante. / This work presents a study of drain current switch-off transients and extraction methods of the generation lifetime in partially depleted SOI nMOSFET transistors of single gate, double gate and triple gate FinFETs. This study is accomplished through two-dimensional numerical simulations and compared with experimental data of devices fabricated in the IMEC (Interuniversity Microelectronics Center), which is in the Catholic University of Leuven (KUL) in Belgium. Initially, it was analyzed the gate oxide thickness and temperature influences on the carrier generation lifetime extraction using the drain current transient. Beyond the generation lifetime, other electric parameters were also analyzed, such as the threshold voltage, the surface potential and the activation energy. Based on process parameter influence study in the determination method of the generation lifetime, it was possible to propose a simple model in order to estimate the carrier generation lifetime as a function of the temperature. This model was experimentally applied and compared to simulated results and it presented a maximum error of 5%. A detailed analysis of the effect of HALO implanted region in the generation lifetime extraction was based on the drain current transient. The results obtained through this study made possible the proposal of a new model. The proposed model considers not only the laterally non-uniform channel profile due to the presence of a HALO implanted region but also the amount of charge controlled by drain and source junctions, a never-before-seen topic in the literature. The new model sensitivity was tested with a ± 20% variation of the doping concentration of the channel and implanted HALO region resulting in a maximum error of 9.2%. Taking the obtained results into consideration, it was possible to analyze the drain current as a function of the channel length reduction. The great efficiency presented by the gate in double gate devices, compared to the single gate ones, was observed through the study of the body potential behavior in this structure. This analysis resulted in the inclusion of a silicon film thickness dependent parameter that made possible the adaptation of the proposed model in this work also for double gate devices. The obtained results presented a good agreement with the channel length variation, temperature and with the doping concentration variation in the channel and HALO implanted region. Finally, it was presented a study about the drain current transient in triple gate FinFET devices, with and without the HALO implanted region, taking the geometric parameter variation into consideration. Through the analysis of the threshold voltage, the transconductance and the drain current transient of the devices, it was possible to observe that the devices without HALO are remarkably more susceptible to the floating body effects influence.

L’écriture de soi se voit envahie d’une présence de plus en plus affirmée du photographique depuis les années 1980. L’influence de la photographie en tant qu’image, acte et médium s’étend au-delà de la redéfinition du champ perceptif humain pour remettre en cause les confins de la représentation littéraire du sujet. Avec la présente étude, nous proposons d’examiner les différents processus d’appropriation du photographique – entendu dans son sens large qui comprend l’ensemble des représentations à caractère photographique, qu’elles soient réelles ou imaginaires – dans l’écriture autobiographique, exemplifiés par les œuvres d’Annie Ernaux (écrivain-amateur de photo) et d’Hervé Guibert (écrivain-photographe). Ces processus sont révélateurs des rapports complexes – de la complémentarité sans faille au conflit virulent – qu’entretient l’écriture de soi avec la photographie. Intégrée respectivement comme paratexte et pendant visuels de l’œuvre littéraire, la photographie est un objet extrêmement malléable, qui « articule de manière complexe ancrage dans le réel et ouverture à l’imaginaire ». Considérée comme agent de mutation littéraire, elle permet de déconstruire les modèles canonisés d’expression autobiographique pour étendre la représentation humaine au-delà de la zone de prédication. / The Self-writing has been invaded by an increasingly assertive presence of photography since the 1980s. The influence of photography as an image, act and medium extends beyond the redefinition of the human perception to challenge the confines of the literary representation of the Subject. With the present study, we propose to examine the various processes of appropriation of the photographic - understood in its broad sense which includes all the representations, real and imaginary, with photographic characters - in the autobiographical writing, exemplified by the works of Annie Ernaux and Hervé Guibert. These processes reveal the complex relationships – from seamless complementarity to virulent conflict – between Self-Writing and photography. Integrated respectively as visual paratext and counterpart of their literary work, photography is an extremely malleable object, which "articulates in a complex way anchoring in the real and opening to the imaginary". Considered as a literary mutation agent, it allows deconstructing the canonized models of autobiographical expression so as to extend the human representation beyond the predicate area.

Les troubles de la temporalité dans la schizophrénie ont fait l’objet de nombreuses descriptions cliniques, notamment de la part de la phénoménologie psychiatrique. Cette dernière considère le temps comme un contenant plus qu’un contenu de la perception c'est-à-dire un processus constitutif essentiel de l’expérience subjective : la conscience est en effet structurée dans le temps. Dans le modèle de Husserl, le temps, assure au travers de processus automatiques de rétention, de présentation et de protention une mise en forme stable et continue de l’expérience. En témoigne l’image de la perception d’une mélodie où chaque note perçue est, au moment même de sa perception, reliée et perçue avec la note précédente qui n’existe plus (rétention) et fait l’objet d’une anticipation vers la note à venir qui n’existe pas encore (protention). Ces processus automatiques déterminent dans ce modèle la capacité du sujet à nouer un sentiment de familiarité avec sa propre expérience, qu’il perçoit comme stable et continue.L’un des modèles phénoménologiques des troubles schizophréniques postule un vacillement des processus assurant la structuration temporelle de la conscience, qui induit par conséquent le vacillement de l’expérience subjective à son niveau le plus basique et détermine un vécu d’étrangeté du sujet à l’égard de sa propre expérience. Ces approches descriptives trouvent cependant leurs limites dans la mesure où la description des processus de temporalisation d’autrui s’avère difficile d’accès par une méthode introspective. Approcher les processus de temporalisation par les sciences cognitives pourrait permettre de dépasser ces limites. Les travaux récents sur l’altération des jugements de simultanéité (qui ne semble cependant pas signer une fusion des évènements à un niveau implicite et automatique) et des processus élémentaires d’anticipation temporelle (évalués cependant à l’échelle de la milliseconde) dans les troubles schizophréniques ainsi que les liens qu’il est possible d’entrevoir avec la théorie du codage prédictif de l’information fournissent un premier ensemble de données très encourageant sur le chemin d’une compréhension cognitiviste du temps schizophrénique. L’objectif de notre travail a consisté à valider d’une part l’hypothèse d’une dissociation des capacités conscientes et automatiques de discrimination des événements dans le temps, en utilisant les paradigmes qui explorent les contraintes temporelles de l’intégration multisensorielle... / Time disorders in schizophrenia have been the subject of numerous clinical descriptions, particularly from the psychiatric phenomenology. The latter considers time more as a container than a content of perception that is to say an essential component of subjective experience: consciousness is indeed structured in time. Husserl describes a tripartite structure of time consciousness, which is seen as an automatic integration of the past, the present, and the future. He gives the example of music. When we listen to a melody, we are conscious of the present note but still have the previous note in mind (“retention”) and usually anticipate the note to come. These automatic processes determine in this model the subject's ability to forge a sense of familiarity with his own experience, lived as stable and continuous.One of phenomenological models of schizophrenic disorders postulated a breakdown of the temporal structure of consciousness, which consequently induces disturbances of subjective experience at its most basic level (the level of minimal self) and determines a subject lived strangeness to respect of his own experience. These descriptive approaches, however, are limited by the extent that it is difficult to describe temporality of others by introspective method. Thus, exploring process of temporality by cognitive sciences could help to overcome these limitations. Recent work focusing on the alteration of simultaneity judgments (which does not seem to sign a merger events to an implicit and automatic level) and basic temporal predictive processes (however measured at the scale of a millisecond) in schizophrenic disorders and the links it is possible to foresee with predictive coding theory provides a very encouraging first set of data on the way to a cognitive understanding of schizophrenic time. The objective of our work was to validate the one hand the hypothesis of dissociation between conscious and automatic discrimination of events in time, using paradigms assessing the temporal constraints of multisensory integration (Study 1). On the other hand, we studied directly implicit time prediction with a dedicated paradigm (in this case, the temporal orientation task, Study 2). We also analyzed the automatic responses of subjects in an event discrimination task in time to check what patients can and can not predict (Study 3). We also explore the hypothesis of a link between temporal and minimal self by looking for correlations between performance...

Cette thèse de doctorat a le but de suggérer une interprétation des dernières oeuvres de Michel Foucault à travers la notion de bios. En analysant ses cours au Collège de France depuis 1980 au 1984 et les autres écrits et interventions de ces ans, elle examine le rôle joué par cette notion à partir de son introduction, au début des ans quatre-vingts, dans le cadre du problème du rapport entre subjectivité et vérité et en opposition au sujet chrétien et moderne. Autour de l’idée de bios semble prendre forme non seulment la reconceptualisation foucauldienne de l’idée de résistance, mais aussi la réflexion sur la dimension de la subjectivité, de la subjectivation. À travers l’examen des régimes de vérité que Foucault esquisse (alèthurgie chrétienne, ephistrophê platonicienne, souci de soi stoïcien, parrêsia socratique et vraie vie cynique), ce travail se propose de mettre en évidence comme la notion de bios acquiert une importance croissante à travers les notions de « techniques de soi », de « pratique de subjectivation » et de « vraie vie ». Foucault semble situer le principal enjeu éthico-politique actuel dans le problème de la manière de vivre et du corp, qui constituent l’essentiel terrain de la lutte politique à l’intérieur duquel il est peut-être possible, aujourd’hui, créer une résistance praticable et efficace à la gouvernamentalité contemporaine. / This work aims to suggest an interpretation of Michel Foucault’s last works through the concept of bios. It analyzes his courses at the Collège de France (1980/1984) and other works and speeches from that period, investigating the role played by this concept since its appearance in the problem of the relationship between subjectivity and truth and in opposition to the Christian and modern subject. Around the idea of bios, not only the Foucault reconceptualization of the idea of resistance, but also the linked reflection on the dimension of the subjectivity, of the subjectivation, comes true. Through the examination of the different regimes of truth that Foucault outlines (Christian aleturgie, Platonic epistrophe, Stoic care of the self, Socratic parrhesia and Cynic vraie vie), this work points out that the notion of bios acquires more and more relevance with the notion of “techniques of self”, the practices of subjectification and the “true life”. Foucault go as far as to place the ethical-political real issue at stakes in the matter of the bios, of the way of life, and of the body, that seem to constitute the essential political battleground where it could be possible today, to create a truly practicable and effective resistance to the contemporary governamentality.

Dans le domaine aéronautique, les systèmes électriques remplacement progressivement les systèmes de contrôle mécaniques ou hydrauliques. Les bénéfices immédiats sont la réduction de la masse embarquée et des performances accrues à condition que l’électronique supporte l’absence de système de refroidissement. Si la haute température de fonctionnement n’empêche pas d’atteindre une fiabilité suffisante, il y aura réduction des coûts opérationnels. Des étapes clefs ont été franchies en introduisant des systèmes à commande électriques dans les aéronefs en lieu et place de systèmes conventionnels : freins électriques, inverseur de poussée, vérins électriques de commandes de vol… Toutes ces avancées se sont accélérées ces dernières années grâce entre autre à l’utilisation de nouveaux matériaux semiconducteurs, dit à grand gap (SiC, GaN…), opérant à haute température et palliant ainsi une faiblesse des dispositifs classiques en silicium (Si). Des composants de puissance haute température, diode Schottky ou transistor JFET SiC, sont ainsi disponibles commercialement et peuvent supporter des ambiantes de plus de 220°C. Des modules de puissances (onduleur) à base de transistor JFET SiC ont été réalisés et validés à haute température. Finalement la partie « commande » de ces modules de puissance reste à concevoir pour les environnements sévères pour permettre leur introduction dans le module de puissance. C’est dans ce contexte de faiblesse concernant l’étage de commande rapprochée qu’a été construit le projet FNRAE COTECH, et où s’inscrivent les travaux de cette thèse, Dans un premier temps, un état de l’art sur les drivers et leurs technologies nous a permis de souligner le lien complexe entre électronique et température ainsi que le potentiel de la technologie CMOS sur Silicium sur Isolant (SOI) pour des applications hautes températures. La caractérisation en température de drivers SOI disponibles dans le commerce nous a fourni des données d’entrée sur le comportement de tels dispositifs. Ces caractérisations sont essentielles pour visualiser et interpréter l’effet de la température sur les caractéristiques du dispositif. Ces mesures mettent aussi en avant les limites pratiques des technologies employées. La partie principale de cette thèse concerne la conception et la caractérisation de blocs ou IPs pour le cœur d’un driver haute température de JFET SiC. Elle est articulée autour de deux runs SOI (TFSmart1). Les blocs développés incluent entre autres des étages de sortie et leurs buffers associés et des fonctions de protection. Les drivers ainsi constitués ont été testés sur un intervalle de température allant de -50°C à plus de 250°C sans défaillance constatée. Une fonction originale de protection des JFETs contre les courts-circuits a été démontrée. Cette fonction permet de surmonter la principale limitation de ces transistors normalement passant (Normaly-ON). Finalement, un module de bras d’onduleur a été conçu pour tester ces driver in-situ. / In aeronautics, electrical systems progressively replace mechanical and hydraulic control systems. If the electronics can stand the absence of cooling, the immediate advantages will be the reduction of mass, increased performances, admissible reliability and thus reduction of costs. In aircraft, some important steps have already been performed successfully when substituting standard systems by electrical control system such as electrical brakes, thrust reverser, electrical actuators for flight control… Large band gap semiconductors (SiC, GaN…) have eased the operation in high temperature over the last decade and let overcome a weakness of conventional silicon systems (Si). High temperature power components such as Schottky diodes or JFET transistors, are already commercially available for a use up to 220°C, limited by package. Moreover inverters based on SiC JFET transistors have been realized and characterized at high temperature. Finally the control part of these power systems needs to be designed for harsh environment. It is in this context of lack of integrated control part that the FNRAE COTECH project and my doctoral research have been built. Based on a state of the art about drivers, the complex link between electronic and temperature and the potentialities of CMOS Silicon-On-Insulator technology (SOI) for high temperature applications have been underlined. The characterization of commercial SOI drivers gives essential data on these systems and their behavior at high temperature. These measurements also highlight the practical limitations of SOI technologies. The main part of this manuscript concerns the design and characterization of functions or IPs for high temperature JFET SiC driver. Two SOI runs in TFSmart1 have been realized. The developed functions include the driver output stage, associated buffers and protection functions. The drivers have been tested from -50°C up to 250°C without failure under short time-range. Moreover, an original protection function has been demonstrated against the short-circuit of an inverter leg. This function allows overcoming the main limitation of the normally on JFET transistor. Finally, an inverter module has been built for in-situ test of these new drivers.

Ce travail se propose de montrer l’articulation de la nature et de l’artifice au sein de la pensée de Rousseau. Nous verrons que la connaissance de la nature est bornée par une origine qui nous échappe et une puissance de transformation qui ne semble pas avoir de fin. Cela conduit notre auteur à remettre en cause l’existence d’un ordre de la nature sur le plan spéculatif et sur le plan moral.. Dans l’homme la nature va se révéler comme vide. La perfectibilité est l’effet de l’inachèvement de la nature de l’homme. Le devenir social de l’homme sera pensé comme l’effet de la découverte érotique de l’autre. Cette découverte altère le moi absolu de l’homme à l’état de nature et le reconfigure en un moi relatif exposé au manque de l’autre. De cette exposition résultent toutes les formes de la socialité, l’aliénation et la liberté. L’étiologie amoureuse de la dénaturation nous a permis de reconnaitre l’importance de la réflexion sur le goût dans la constitution de la sociabilité. La différence sexuelle apparait comme le résultat d’un processus de différentiation dont le ressort est le désir de plaire. Le désir de plaire sera pour Rousseau un obstacle à l’uniformité de la société. Il préserve les différences qui sont à la fois les conditions du bon goût et de la volonté générale. La dépendance de l’homme devenu social est paradoxalement ce qui fait de la liberté une propriété en puissance de la vie en société. Dans ce cadre, le peuple n’est ni un sujet, ni une instance juridique, il est la forme du lien sociale sous la détermination de la liberté. Il y a peuple lorsque le lien unissant chacun à l’État, et unissant les hommes entre eux sous les conditions de l’égalité et de la liberté, devient un intérêt particulier. / This thesis shows the articulation between nature and artifice in Rousseau's thought. Rousseau argues that the knowledge of nature is limited by an origin that escapes from us and by a transformational power that seems immeasurable. This leads him to interrogate the existence of a natural order, both at speculative and moral levels. The man of nature is interpreted as unfinished with an unlimited changing potency. Rousseau argues that man´s becoming is the result of the erotic discovery of the other. This discovery distorts the absolute I of the man in the natural state and reshapes them in a relative I - exposed to the other's absence. From this recognition stems all forms of sociality, alienation and liberty. “Denaturation”'s amorous aetiology allows us to recognize the centrality of taste in the constitution of sociability. Sexual difference appears as the consequence of a differentiation process guided by the desire to please. For Rousseau, the desire to please challenges society´s uniformity. He argues that both the conditions for the good taste and general shape/foster/configure difference. The dependency of the human – as social being- is what, paradoxically, makes freedom a potential property in social life. In this scenario, “the people” is neither a subject nor a juridical element. It represents the social tie shaped by the conditions of freedom and equality. “The people” emerges under the conditions of equality and liberty and when every individual is tied to the state and to each other reflecting the union of everybody´s particular interests / Naturaleza y artificio en la constitución de la sociabilidad en el pensamiento de Rousseau.Este trabajo se propone mostrar la articulación de la naturaleza y el artificio en el pensamiento de Rousseau. El conocimiento de la naturaleza está para Rousseau limitado por un origen inalcanzable y una potencia de transformación que parece infinita. Lo cual lleva al autor a cuestionar la existencia de un orden de la naturaleza tanto en el plano especulativo como en el plano moral. El hombre de la naturaleza se presenta como un ser inacabado, con una potencia de transformación ilimitada. El devenir social del hombre resulta del descubrimiento erótico del otro. Este descubrimiento altera el yo absoluto del hombre natural y lo reconfigura en un yo relativo expuesto a la falta del otro. De esta exposición resultan todas las formas de sociabilidad, la alienación y la libertad. La etiología amorosa de la desnaturación permite reconocer la importancia del gusto en la constitución de la sociabilidad. La diferencia sexual es el resultado de un proceso de diferenciación cuyo móvil es el deseo de gustar. El deseo de gustar es un obstáculo a la uniformidad de la sociedad. Preserva las diferencias, estas son la condición del buen gusto y de la voluntad general. La dependencia del hombre devenido social es paradójicamente lo que hace que la libertad sea una propiedad en potencia de la vida en sociedad. En este marco, el pueblo no es ni un sujeto, ni una instancia jurídica, es la forma del lazo social determinado por las condiciones de la igualdad y la libertad. Hay pueblo cuando el lazo que une cada uno al Estado, y a los hombres entre sí, bajo la condición de la igualdad y de la libertad, se transforma en el punto de unión de todos los intereses particulares.

Este trabalho foi realizado tendo como objetivo o estudo do ponto invariante com a temperatura (ZTC - Zero Temperature Coefficient) para transistores com estrutura SOI FinFET em relação aos efeitos de tensionamento e radiação, através da utilização de dados experimentais e de um modelo analítico. Foram analisados primeiramente os parâmetros básicos de tensão de limiar e transcondutância, nos quais está baseado todo o modelo e verificado a influência dos efeitos do tensionamento e da radiação nos mesmos, para analisar o comportamento da tensão de porta no ponto ZTC em dispositivos do tipo n. Foram utilizados dispositivos com três dimensões de largura de aleta (fin) diferentes, 20nm, 120nm e 370nm e comprimento de canal de 150nm e de forma comparativa em dispositivos de 900nm, em quatro lâminas diferentes, sem/com tensionamento e/ou sem/com radiação. A tensão de limiar sofre grande influência do tensionamento, enquanto a radiação tem menor efeito na tensão de limiar na faixa estudada, passando a ter maiores significâncias nos dispositivos tensionados com maior largura de aleta. A transcondutância também sofre maior influência do efeito de tensionamento, sendo neste parâmetro a alteração pelo efeito da radiação muito menor. Contudo estes dois parâmetros geram outros dois parâmetros essenciais para análise do ZTC, que são obtidos através das suas variações em relação a temperatura. A variação da tensão de limiar em relação à temperatura e a degradação da transcondutância também pela temperatura (ou fator c: degradação da mobilidade pela temperatura), influenciam diretamente na eventual variação do ponto de ZTC com a temperatura. Quando estas influências são pequenas ou atuam de forma a compensarem-se mutuamente, resultam em valores de ZTC mais constantes com a temperatura. A tensão de limiar influência direta e proporcionalmente no valor da tensão de ZTC em amplitude, enquanto a degradação da mobilidade (transcondutância) atua mais na constância do ZTC com a temperatura. Com base nestes mesmos parâmetros e com ajustes necessários no modelo foram estudados dispositivos com as mesmas características físicas, porém, do tipo p, onde os resultados encontrados tiveram relação a característica de funcionamento deste outro tipo, ficando claro a inversão da significância dos efeitos quanto a variação da temperatura. O modelo simples e analítico utilizado para o estudo do ZTC foi validado para esta tecnologia, já que foi encontrado valores de erro entre valores experimentais e calculados com um máximo de 13% incluindo toda a faixa de temperatura e a utilização dos efeitos de radiação e tensionamento, tendo mostrado valores discrepantes somente para alguns casos de largura da aleta maiores, que mostraram ter uma pequena condução pela interface canal/óxido enterrado antes da condução na primeira interface, não prevista no modelo. / This work was performed with the aim of the study of the invariant point with temperature (called ZTC - Zero temperature Coefficient) for transistors made with SOI FinFET structure in relation to the mechanical stress and irradiation effects, through of the use of experimental data and an analytical model. Were first analyzed the basics parameters as threshold voltage and transconductance, in which all the model is based and was verified the influence of the mechanical stress and irradiation effects on these parameters, for analyze the gate voltage\'s behavior on ZTC point in n type devices. Were used devices with three different width fin dimensions, 20nm 120nm and 370nm and channel length of 150nm and in a comparative way with 900nm length devices, in four different waffles, with/without mechanical stress and/or with/without irradiation. The threshold voltage suffers big influence from stress, while the irradiation has less effect on the threshold voltage in the studied band, becoming to have more significance on the stressed devices with larger fin width. The transconductance also suffers more influence of the stress effect, being on this parameter the variation caused by irradiation effect smaller. However, these two parameters generate others two essentials parameters for the ZTC analysis, they are obtained through of the previous parameters variation by the temperature. The threshold voltage variation by the temperature and the tranconductance degradation by the temperature (or c factor: mobility degradation by the temperature), influence directly on the eventual variation of the ZTC point by the temperature. When these influences are small or act by the way to compensate mutually, result at ZTC values more constant with the temperature. The threshold voltage influence direct proportionality on the ZTC voltage\'s value at amplitude, while the mobility (transconductance) degradation act more on ZTC stability with the temperature. Based in these same parameters and with necessaries adjusts on the model, were studied devices with the same physic characteristics, but of the p type, where the founded results had relation with the work characteristics of this other type, becoming clear the inversion of significance of the effects by the temperature variation. The simple and analytical model used for the ZTC study was validated for this technology, since it was found error values between experimental data and calculated data with a maximum of 13%, shown discrepant values only for some cases of larger fin widths, that shown to have a small conduction by the channel/buried oxide interface before of the first interface\'s conduction, not previewed in the model.

Nesse trabalho de mestrado estudou-se o comportamento elétrico de transistores verticais de múltiplas portas (3D) sobre isolante (SOI FinFET) sob o efeito da radiação de prótons em baixa temperatura, por meio de métodos experimentais e simulações numéricas. Inicialmente, foram comparados os comportamentos dos transistores antes e depois de serem submetidos à radiação de prótons, em temperatura ambiente. Esta análise foi realizada tanto para dispositivos com canal do tipo p quanto do tipo n, estudando-se tanto como as características analógicas são alteradas após o dispositivo ser irradiado por prótons com uma energia de aproximadamente 60 MeV quanto as características digitais. Estudou-se os efeitos da dose total ionizante (TID) nos dispositivos SOI FinFETs. Estes efeitos se manifestam de formas diferentes, muitas vezes opostas, para transistores nMOS e pMOS. Os efeitos da radiação na inclinação de sublimiar (SS) dos pFinFETs, por exemplo, resultaram em uma melhoria da velocidade de chaveamento, enquanto que os nFinFET sofreram uma degradação. Já a variação negativa da tensão de limiar (VT), uma vez que a maior parte das cargas acumuladas no óxido são positivas, deixa os transistores pMOS mais imunes a corrente parasitária da segunda interface, e novamente degrada as características dos nMOS. Os transistores com aletas mais largas têm uma maior área de óxido enterrado abaixo do filme de silício, o que resulta em um maior acúmulo de cargas. Portanto, a degradação dos parâmetros foi mais acentuada do que em dispositivos com aletas mais estreitas. Transistores com canal curto estão sujeitos aos efeitos de canal curto e se mostraram mais suscetíveis à radiação de próton na região de sublimiar. Além da análise dos parâmetros básicos, realizou-se uma análise de compromisso entre três parâmetros analógicos: a eficiência do transistor (gm/ID), a frequência de ganho unitário (fT) e o ganho intrínseco de tensão (AV). Eles foram estudados em função do coeficiente de inversão (IC), sendo possível verificar o comportamento dos dispositivos em cada regime de inversão e, posteriormente, o melhor compromisso entre os parâmetros, para uma dada aplicação. Em baixas temperaturas foi também observado que enquanto para os parâmetros digitais, os transistores de canal p mostraram um melhor desempenho quando focando os parâmetros digitais (tensão de limiar e inclinação de sublimiar), nFinFETs mostraram-se mais imunes a radiação de prótons em baixa temperatura, quando analisados os parâmetros analógicos como o ganho intrínseco de tensão (resposta mais estável à radiação em baixas temperaturas). / This master degree\'s dissertation aims to study the low temperature electrical behavior of tridimensional transistors on insulator (SOI FinFET) under the effects of proton radiation, through experimental methods and numeric simulations. Initially, it was compared the transistors\' behavior before and after they have been subjected to proton radiation, at room temperature. This analysis was performed for both p- and n-channel devices, studying how the analog parameters change after the devices are irradiated by protons with approximately 60 MeV energy. The effects of total ionization dose on SOI FinFET devices were studied. These effects are manifested in different, very often opposing ways for nMOS and pMOS transistors. The radiation effects on the subthreshold slope (SS) in pFinFETs, for example, resulted in a switching speed improvement, while the nFinFETs were degraded. Also, the negative shift in the threshold voltage (VT), as most of the oxide trapped charges are positive, made the pMOS transistors more immune to the parasitic current at the second interface, and, again, the nMOS ones had their characteristics degraded. The wide-fin transistors have a bigger oxide area beneath the silicon film, which results in a greater charge buildup. Hence, the parameter degradation was more substantial than for narrow-fin devices. Short-channel transistors are subject to short-channel effects and showed themselves more susceptible to proton irradiation at the subthreshold region. In addition to the basic parameter analysis, it was done a tradeoff analysis between three analog parameters: the transistor efficiency (gm/ID), the unit gain frequency (fT) and the intrinsic voltage gain (AV). They have been studied as a function of the inversion coefficient (IC), where it was possible to observe the devices\' behavior for each inversion regime and, after, the best tradeoff between the parameters, for a given application. At low temperature, it was also observed that while pFinFETs have a better performance when looking at digital parameters VTH and SS after irradiation, nFinFETs showed more immunity to proton radiation when analyzed from their analog parameter with a more stable response to low temperatures.

O objetivo da presente dissertação é compreender a concepção de divertimento nos escritos de Blaise Pascal, tanto em sentido, por assim dizer, antropológico, quanto moral. A partir da noção de conhecimento de si, refletiremos sobre os principais conceitos pascalianos que se relacionam com o que ele chamava de estudo do homem. / L\'objectiv de cette thèse est de comprendre la notion de divertissement dans les écrits de Blaise Pascal, dans l\'ordre, pour ainsi dire, anthropologique et moral. De la notion de connaissance de soi, nous allons réfléchir sur les concepts clés pascalien qui se rapportent à ce qu\'il appelle l\'étude de l\'homme.