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Scanning probe microscopy of adsorbatesPinheiro, Lucidalva dos Santos January 1996 (has links)
No description available.
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Kinetic and morphological studies of palladium oxidation in O₂-CH₄ mixturesHan, Jinyi. January 2004 (has links)
Thesis (Ph. D.)--Worcester Polytechnic Institute. / Keywords: Oxidation; Palladium; Scanning Tunneling Microscopy; Palladium oxide; PdO morphology; PdO surface area measurement; Turnover rate for methane combustion; Oxygen. Includes bibliographical references.
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A scanning tunneling microscopy investigation of YBa₂Cu₃O₇-[subscript x] /Derro, David Joseph, January 2000 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 52-55). Available also in a digital version from Dissertation Abstracts.
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Construction and assembly of a scanning tunneling microscopePonath, Patrick 03 January 2013 (has links)
In the scope of this master thesis, a home-made brass scanning tunneling microscope
(STM) was machined, assembled and tested for its functionality. For
this microscope, a new approach-technique was used which follows the design suggested
by Pan. The difference to Pan's design is the use of piezoplates, instead of
piezostacks. Hence, the approach is still based on the stick and slip motion, but it
allows the microscope to be more compact. A new and simple electronic circuit,
in order to control the approach, is presented and was put together. This circuit is
based on mechanical relays, which provide a sufficient long time gap between the
single moving steps, due to their mechanical functional principle. Subsequently the
approach-technique and the scanning was successfully tested. Finally, first images
of HOPG were taken under ambient conditions. / text
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Optimization of etching parameters for STM tips and an STM study of SiC (0001) [square root]3 x [square root]3 reconstruction吳誼暉, Ng, Yee-fai. January 1998 (has links)
published_or_final_version / abstract / toc / Physics / Master / Master of Philosophy
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Scanning tunneling microscopy and computational chemistry studies for controlled reactions on siliconSkliar, Dimitri B. January 2009 (has links)
Thesis (Ph.D.)--University of Delaware, 2008. / Principal faculty advisor: Brian G. Willis, Dept. of Chemical Engineering. Includes bibliographical references.
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Image-based output trajectory estimation in scanning tunneling microscopes /Clayton, Garrett M. January 2008 (has links)
Thesis (Ph. D.)--University of Washington, 2008. / Vita. Includes bibliographical references (p. 79-85).
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Optimization of etching parameters for STM tips and an STM study of SiC (0001) [square root]3 x [square root]3 reconstruction /Ng, Yee-fai. January 1998 (has links)
Thesis (M. Phil.)--University of Hong Kong, 1999. / Includes bibliographical references (leaves 100-101).
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Scanning Tunneling Microscopy Investigation of Interfacial Properties between P3HT and PCBMShih, Min-Chuan 21 July 2011 (has links)
The electronic structures at the hetero interface of Poly(3-hexylthiophene): methanofullerene (P3HT:PCBM) have a great improvement on the solar cell efficiency due to the formation of bicontinuous nanoscaled phase separation which will enhance charge separation and carrier transport. In the present work, cross-sectional scanning tunneling microscopy and scanning tunneling spectroscopy measurements are utilized to obtain the in-situ atomic-scale band structure across the interface between P3HT and PCBM directly. The distribution of PCBM volume concentration of organic films was also analyzed and discussed in the work.
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Scanning tunneling microscopy investigations of the N-type LaAlO3/TiO2-SrTiO3 heterostructureWang, Wen-Ching 22 July 2011 (has links)
The electronic structure at interface between two insulators LaAlO3 and SrTiO3 has been investigated by using scanning tunneling microscopy and spectroscopy. The atomic-scale interfacial band structure is also demonstrated in the work with the consideration of the tip-induced band bending effect.
Experimental results indicate that the magnitude of the built-in field across LaAlO3 is 0.075¡Ó0.005 V/Å. The band bending on SrTiO3 side at the heterointerface is observed. The band downshift of SrTiO3 side at the interface is 0.1 eV with ~1 nm decay length.
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