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The Global ETD Search service is a free service for researchers
to find electronic theses and dissertations. This service is
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Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
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Showing 1 to 10 of 260 (0.044 seconds)Spelling suggestions: "subject:"semiconductor field"" "subject:"semiconductor yield""
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Modeling of narrow-width effect in MOSFET黎沛濤, Lai, Pui-to. January 1984 (has links)
published_or_final_version / Electrical Engineering / Doctoral / Doctor of Philosophy
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| 2 |
A study of gate-oxide leakage in MOS devicesFleischer, Stephen. January 1993 (has links)
published_or_final_version / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy
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| 3 |
Optimisation of submicron low-noise GaAs MESFETsAhmed, Muhammad Mansoor January 1995 (has links)
No description available.
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| 4 |
Investigation of high mobility pseudomorphic SiGe p channels in Si MOSFETS at low and high electric fieldsPalmer, Martin John January 2001 (has links)
No description available.
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| 5 |
Layout dependent and bias independent scalable substrate model for RF MOSFETsSuravarapu, Ravikanth 07 January 2003 (has links)
The dependence of the substrate resistance, R[subscript sub], for MOS transistor RF
modeling on transistor biasing and layout is studied from device simulations and
measurements. Though R[subscript sub] is found to be bias dependent, the error incurred by
assuming a constant value equal to the DC resistance is not significant. A scalable
model for R[subscript sub] of multiple gate fingers is developed. This model is simple to extract
and gives good agreement for the output admittance of a MOSFET. The model is
validated by measurements on DC test structures fabricated in a TSMC 0.35 ��m
CMOS process. The dependence of Rb on transistor dimensions and the location
of substrate contacts with respect to device active area is also presented. A low
noise amplifier (LNA) is designed and fabricated in the 0.35 ��m TSMC process to
show the effect of R[subscript sub] on the performance of a LNA. / Graduation date: 2003
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| 6 |
Physics and technology of high mobility, strained germanium channel, heterostructure MOSFETsKrishnamohan, Tejas. January 2006 (has links) (PDF)
Thesis (Ph.D.)--Stanford University, 2006. / Adviser: Krishna C. Saraswat. Includes bibliographical references (p. 160-177)
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| 7 |
Semiclassical Monte Carlo simulation of nano-scaled semiconductor devices28 August 2008 (has links)
Not available
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| 8 |
Characterization of oxygen and carbon effects in silicon material and MOSFET devicesHaddad, Homayoon 20 February 1990 (has links)
Graduation date: 1990
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| 9 |
Bandgap engineering in vertical MOSFETsChen, Xiangdong. January 2001 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2001. / Vita. Includes bibliographical references. Available also from UMI/Dissertation Abstracts International.
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| 10 |
Analytical and compact modeling of highly asymmetrical independent double-gated transistors a dissertation presented to the faculty of the Graduate School, Tennessee Technological University /Jeedigunta, Manjeera, January 2009 (has links)
Thesis (Ph.D.)--Tennessee Technological University, 2009. / Title from title page screen (viewed on Feb. 10, 2010). Bibliography: leaves 146-153.
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