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Fabrication of ultrathin SiC film using grafted poly(methylsilane)Lertwiwattrakul, Wimol 06 December 2000 (has links)
��-SiC is a semiconductor for high temperature devices, which exhibits several outstanding properties such as high thermal stability, good chemical stability and wide band gap. There is a possibility of fabricating a crack-free ultrathin SiC film on silicon wafers by pyrolysis of polymethylsilane (PMS) film.
This study looks into the possibility, as the first phase, to modify the surface of silicon and graft PMS onto the surface. A new technique reported in this thesis consists of a surface modification with trimethoxysilylpropene (TSP) followed by the surface attachment of dichloromethylsilane (DMS) in the presence of a platinum catalyst, which acts as the first unit for grafting PMS molecules by the sodium polycondensation of additional DMS monomers. The grafted PMS polymers would serve as the pyrolytic precursor to be converted into thin layers of SiC.
Surface analysis of these films on silicon wafers by X-ray photoelectron spectroscopy (XPS) indicated that the silicon surface was successfully modified with TSP, attached with DMS, and finally grafted with PMS. It was also confirmed by
powder X-ray diffraction (XRD) that PMS formed simultaneously in the bulk solution was converted into SiC by pyrolysis at temperatures above 1100��C under Ar atmosphere.
Extended studies showed that the PMS-derived coatings, formed in an Ar stream containing 1% H��� at 400��C, were significantly oxidized, and further heating to 700��C yielded a Si0��� layer with graphitic carbon. The intensity of the graphite peak decreased with an increase in the pyrolysis temperature. Based on these preliminary studies towards the second phase, i.e. the pyrolysis of PMS to SiC, the need for further research to eliminate the oxidation source(s) is strongly suggested. / Graduation date: 2001
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Silicon carbide epitaxial growth using methylsilanes as gas sourcesPeng, Charlie Y. January 1900 (has links)
Thesis (Ph. D.)--West Virginia University, 2004. / Title from document title page. Document formatted into pages; contains x, 119 p. : ill. Includes abstract. Includes bibliographical references (p. 108-114).
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Comparative studies of 6H-SiC surface preparationRaghavan, Srikanth, January 2008 (has links)
Thesis (M.S.)--West Virginia University, 2008. / Title from document title page. Document formatted into pages; contains xii, 56 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 51-53).
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Process development for IrAl coated SiC-C functionally graded material for the oxidation protection of graphite /Richards, Mark Rowse. January 1996 (has links)
Thesis (Ph. D.)--University of Washington, 1996. / Vita. Includes bibliographical references (leaves [283]-292).
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Palladium and nickel interactions with stepped 6H-silicon carbideWoodworth, Andrew A. January 1900 (has links)
Thesis (Ph. D.)--West Virginia University, 2005. / Title from document title page. Document formatted into pages; contains vii, 107 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 102-107).
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Studies of the initial stage of silicon carbide growth on siliconZiemer, Katherine S. January 2001 (has links)
Thesis (Ph. D.)--West Virginia University, 2001. / Title from document title page. Document formatted into pages; contains xvi, 217, 2 p. : ill. (some col.). Vita. Includes abstract. Includes bibliographical references (p. 198-207).
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Low-energy electron induced processes in hydrocarbon films adsorbed on silicon surfacesShepperd, Kristin. January 2009 (has links)
Thesis (Ph. D.)--Chemistry and Biochemistry, Georgia Institute of Technology, 2010. / Committee Chair: Orlando, Thomas; Committee Member: El-Sayed, Mostafa; Committee Member: First, Phillip; Committee Member: Lackey, Jack; Committee Member: Tolbert, Laren. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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An investigation of [beta]-SiC/Si (100) for high temperature hydrogen detectionShelton, Nicholas P. January 1900 (has links)
Thesis (M.S.)--West Virginia University, 2007. / Title from document title page. Document formatted into pages; contains ix, 69 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 55-63).
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Measurement of the Young's modulus of hexoloy silicon carbide thin films using nanoindentationCrocker, Janina. January 1900 (has links)
Thesis (M.Eng.). / Written for the Dept. of Mechanical Engineering. Title from title page of PDF (viewed 2008/01/14). Includes bibliographical references.
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Epitaxial graphene films on SiC : growth, characterization, and devices /Li, Xuebin January 2008 (has links)
Thesis (Ph.D.)--Physics, Georgia Institute of Technology, 2008. / Committee Chair: de Heer, Walter; Committee Member: Chou, Mei-Yin; Committee Member: First, Phillip; Committee Member: Meindl, James; Committee Member: Orlando, Thomas
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