Thesis (Ph. D.)--Lehigh University, 2001. / Includes vita. Includes bibliographical references (leaves 118-130).

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Thesis (Ph.D.)--University of Texas at Arlington, 2008.

Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references. Available also from UMI Company.

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Thesis (doctoral)--Helsinki University of Technology, 2005. / Includes bibliographical references. Also available on the World Wide Web.

Thesis (doctoral)--Helsinki University of Technology, 2004. / Includes bibliographical references. Also available on the World Wide Web.

Liang Tak Keung. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2002. / Includes bibliographical references. / Abstracts in English and Chinese. / Abstract --- p.I / Acknowledgement --- p.IV / Table of contents --- p.V / List of figures --- p.VIII / Chapter Chapter 1: --- Introduction --- p.1 / Chapter 1.1 --- Introduction to silicon waveguides --- p.2 / Chapter 1.2 --- Introduction to characterization of silicon waveguides --- p.5 / Chapter 1.3 --- Introduction to applications of silicon waveguides --- p.6 / Chapter 1.4 --- Introduction to chapters --- p.7 / References --- p.9 / Chapter Chapter 2: --- Modal analysis of the single-mode silicon waveguide --- p.12 / Chapter 2.1 --- Waveguide structure --- p.13 / Chapter 2.2 --- Effective Index Method --- p.14 / Chapter 2.3 --- Silicon waveguide modal analysis --- p.20 / Chapter 2.4 --- Conclusion --- p.25 / References --- p.26 / Chapter Chapter 3: --- Optical dispersion --- p.27 / Chapter 3.1 --- Introduction --- p.28 / Chapter 3.1.1 --- Chromatic dispersion --- p.28 / Chapter 3.1.2 --- Polarization-mode dispersion --- p.33 / Chapter 3.2 --- Review of dispersion measurement technique --- p.35 / Chapter 3.2.1 --- Chromatic dispersion measurement --- p.35 / Chapter 3.2.2 --- Polarization-mode dispersion measurement --- p.39 / Chapter 3.3 --- Measurement of chromatic dispersion in silicon waveguide --- p.40 / Chapter 3.3.1 --- Experimental setup --- p.40 / Chapter 3.3.2 --- Measurement theory --- p.41 / Chapter 3.3.3 --- Results and discussions --- p.43 / Chapter 3.4 --- Measurement of polarization-mode dispersion in silicon waveguide --- p.49 / Chapter 3.4.1 --- Experimental setup --- p.49 / Chapter 3.4.2 --- Simulation results --- p.50 / Chapter 3.4.3 --- Results and discussions --- p.51 / Chapter 3.5 --- Conclusion --- p.53 / References --- p.54 / Chapter Chapter 4: --- Nonlinear properties --- p.56 / Chapter 4.1 --- Introduction --- p.57 / Chapter 4.1.1 --- Nonlinear refractive index (optical Kerr effect) --- p.57 / Chapter 4.1.2 --- Self-phase modulation --- p.58 / Chapter 4.1.3 --- Two-photon absorption --- p.59 / Chapter 4.1.4 --- Impact of nonlinearities on waveguides --- p.60 / Chapter 4.2 --- Measurement of nonlinear refractive index n2 and TPA coefficient β2 --- p.61 / Chapter 4.2.1 --- Nonlinear refractive index (n2) --- p.62 / Chapter 4.2.2 --- TPA coefficient (β2) --- p.63 / Chapter 4.2.3 --- Conclusion --- p.65 / References --- p.66 / Chapter Chapter 5: --- Loss in ion-implanted silicon waveguide --- p.67 / Chapter 5.1 --- Introduction to ion implantation --- p.68 / Chapter 5.2 --- Ion-implantation process --- p.70 / Chapter 5.3 --- Loss measurement by Fabry-Perot interferometer --- p.72 / Chapter 5.4 --- Results and discussions --- p.73 / References --- p.75 / Chapter Chapter 6: --- Silicon waveguide autocorrelator --- p.76 / Chapter 6.1 --- Introduction on SHG and waveguide autocorrelation technique --- p.77 / Chapter 6.2 --- Theory of TPA absorption --- p.79 / Chapter 6.3 --- Two-photon-induced photocurrent in silicon waveguide --- p.80 / Chapter 6.3.1 --- Device structure --- p.80 / Chapter 6.3.2 --- Intensity dependent photocurrent generation --- p.81 / Chapter 6.3.3 --- Theoretical modeling of photocurrent generation --- p.83 / Chapter 6.4 --- Autocorrelation measurement of short pulses --- p.87 / Chapter 6.4.1 --- Experimental setup --- p.87 / Chapter 6.4.2 --- Results and discussions --- p.88 / Chapter 6.5 --- Conclusion --- p.92 / References --- p.93 / Chapter Chapter 7: --- Conclusion and future works --- p.94 / Chapter 7.1 --- Conclusion --- p.94 / Chapter 7.2 --- Future works --- p.95 / Appendices --- p.96 / Appendix A: Silicon waveguide fabrication process capability at CUHK --- p.96 / Appendix B: Matlab programs of EIM and TPA calculation --- p.100 / Appendix C: Publications list --- p.104

Lau Wai Kwok. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references. / Acknowledgement --- p.iv / Abstract --- p.v / Chapter Chapter 1 --- Introduction --- p.1-1 / Chapter 1.1 --- Perspective --- p.1-1 / Chapter 1.2 --- MEDICI - The Simulation Package --- p.1 -2 / Chapter 1.3 --- Overview --- p.1-3 / Chapter Chapter 2 --- The Emergence of SOI Devices --- p.2-1 / Chapter 2.1 --- Introduction --- p.2-1 / Chapter 2.2 --- Advantages of SOI Devices --- p.2-1 / Chapter 2.2.1 --- Reliability Improvement --- p.2-2 / Chapter 2.2.2 --- Total Isolation --- p.2-3 / Chapter 2.2.3 --- Improved Junction Structure --- p.2-4 / Chapter 2.2.4 --- Integrated Device Structure --- p.2-5 / Chapter 2.3 --- Categories of SOI Devices --- p.2-6 / Chapter 2.3.1 --- Thick Film SOI Devices --- p.2-7 / Chapter 2.3.2 --- Thin Film SOI Devices --- p.2-8 / Chapter 2.3.3 --- Medium Film SOI Devices --- p.2-8 / Chapter 2.4 --- Drawbacks of SOI Devices --- p.2-9 / Chapter 2.4.1 --- Floating Body Effects --- p.2-9 / Chapter 2.4.2 --- Parasitic Bipolar Effects --- p.2-11 / Chapter 2.4.3 --- Cost --- p.2-15 / Chapter 2.5 --- Manufacturing Methods --- p.2-16 / Chapter 2.5.1 --- Epitaxy-Based Method --- p.2-16 / Chapter 2.5.2 --- Recrystallization-Based Method --- p.2-18 / Chapter 2.5.3 --- Wafer Bonding Based Method --- p.2-19 / Chapter 2.5.4 --- Oxidation Based Method --- p.2-20 / Chapter 2.5.5 --- Implantation Based Method --- p.2-22 / Chapter 2.6 --- Future Trend --- p.2-22 / Chapter 2.7 --- The Quest for Silicon-On-Nitride Structure --- p.2-23 / Chapter Chapter 3 --- Description of Body-Contact SOI Structure --- p.3-1 / Chapter 3.1 --- Introduction --- p.3-1 / Chapter 3.2 --- Current Status of Body-Contact SOI Structure --- p.3-1 / Chapter 3.3 --- The Body-Contact SOI Structure to be studied --- p.3-4 / Chapter 3.4 --- Impact on Device Fabrication --- p.3-7 / Chapter 3.4.1 --- Fabrication of Conventional Bulk CMOS --- p.3-7 / Chapter 3.4.2 --- Fabrication of Conventional SOI CMOS --- p.3-8 / Chapter 3.4.3 --- Fabrication of BC SOI CMOS --- p.3-10 / Chapter Chapter 4 --- Device Simulations --- p.4-1 / Chapter 4.1 --- Introduction --- p.4-1 / Chapter 4.2 --- MEDICI --- p.4-1 / Chapter 4.2.1 --- Basic Equations --- p.4-2 / Chapter 4.2.2 --- Solution Methods --- p.4-3 / Chapter 4.2.3 --- Initial Guess --- p.4-6 / Chapter 4.2.4 --- Grid Allocations --- p.4-7 / Chapter 4.2.5 --- Source File --- p.4-8 / Chapter 4.3 --- Structures for Simulations --- p.4-9 / Chapter 4.3.1 --- l.2μm NMOS Bulk (LDD) --- p.4-9 / Chapter 4.3.2 --- 1.2μm SOI(O) NMOS 1000/3500 NBC --- p.4-11 / Chapter 4.3.3 --- 1.2μm SOI(N) NMOS 1000/3500 NBC --- p.4-12 / Chapter 4.3.4 --- 1.2μm SOI(O) NMOS 1000/3500 WBC --- p.4-13 / Chapter 4.3.5 --- 1.2μm SOI(N) NMOS 1000/3500 WBC --- p.4-14 / Chapter 4.4 --- Summary --- p.4-14 / Chapter Chapter 5 --- Simulation Results --- p.5-1 / Chapter 5.1 --- Introduction --- p.5-1 / Chapter 5.2 --- Comparisons of Different Structures --- p.5-1 / Chapter 5.2.1 --- Impurity Profiles of Structures --- p.5-2 / Chapter 5.2.2 --- Body Effect --- p.5-10 / Chapter 5.2.3 --- Breakdown Voltage and Transistor Current Driving --- p.5-16 / Chapter 5.2.4 --- Transconductance and Mobility --- p.5-20 / Chapter 5.2.5 --- Subthreshold Swing --- p.5-23 / Chapter 5.3 --- Dependence on Key Structure Parameters --- p.5-29 / Chapter 5.3.1 --- Dependence on Insulator Thickness --- p.5-29 / Chapter 5.3.2 --- Dependence on Silicon Overlayer Thickness --- p.5-34 / Chapter 5.3.3 --- Dependence on Size of Body-Contact --- p.5-37 / Chapter 5.4 --- Summary --- p.5-40 / Chapter Chapter 6 --- Reduction of Latch-up Susceptibility --- p.6-1 / Chapter 6.1 --- Introduction --- p.6-1 / Chapter 6.2 --- Construction of a p-channel MOS Transistor --- p.6-2 / Chapter 6.2.1 --- Threshold Voltage and Body Effect --- p.6-3 / Chapter 6.2.2 --- I-V Characteristics --- p.6-3 / Chapter 6.2.3 --- Transconductance --- p.6-5 / Chapter 6.2.4 --- Subthreshold Swing --- p.6-5 / Chapter 6.3 --- Mechanism of Latch-up in CMOS --- p.6-6 / Chapter 6.4 --- Construction of a CMOS Invertor for Simulation --- p.6-10 / Chapter 6.5 --- Latch-up Susceptibility Dependence --- p.6-16 / Chapter 6.5.1 --- Dependence on Insulator Thickness --- p.6-16 / Chapter 6.5.2 --- Dependence on N-well Depth --- p.6-19 / Chapter 6.5.3 --- Dependence on Transistor Separation --- p.6-22 / Chapter 6.5.4 --- Dependence on Size of Body-Contact --- p.6-25 / Chapter 6.6 --- Summary --- p.6-28 / Chapter Chapter 7 --- Conclusions --- p.7-1 / Chapter 7.1 --- Summary --- p.7-1 / Chapter 7.2 --- Recommendation --- p.7-3 / Reference / Appendix A

Thesis (Ph.D.)--McMaster University, 2006. / Supervisor: P.E. Jessop Includes bibliographical references ( leaves 166-179).