Several results were reviewed on the charge injection into thin conjugated polymer films. The space charge limited tunneling current (SCTC) and space-charge limited current (SCLC) models were used to explain the charge injection and transport in conjugated polymer films such as those used in organic light emitting diodes. On the basis of regional approximation, the effect of the space charge on the current density of electrons tunneling from metal electrodes to the lowest unoccupied molecular orbital of a polymer film is calculated. The space charge is considered to decrease with increasing distance of the injecting electrode. If the space charge occupies only a limited region between the tunneling (short) distance and the collecting electrode, the current (I) is found to be independent on a power law of the applied voltage (V). However, if the space charge occupies all the region between the tunneling distance and the collecting electrode, I is found to vary exponentially on V for lower V values, and that follow approximately the law of Child at high V in region I, the law of Trap filled limited current at middle voltage in region II and the region III show Ohm¡¦s law at lower voltage. The space charge limited tunneling current (SCTC) theory gives the same results of the space charge limited conduction theory when the energy barrier for charge carrier injection is small or when the polymer layer is thick. Under various bias voltages, the charge transport mechanism was analyzed to investigate the effects on the thin conjugated polymer films induced by the parameters such as background concentration, trap-state density and space charge etc... The results show the transport current decrease with increasing the trap-state density and also increase the characteristic temperature parameters. In this study, the regional approximation is applied to calculate the charge injection and current transport mechanism in the organic thin film. The SCTC and SCLC models are compared to the experimental data. It shows that there is a good agreement between theory and experiment, concerning both current magnitude and current versus voltage dependence. It is very important that our model gave a new way to simplify the calculation and to discuss the charge transport of organic light emitting diode.

Organic semiconductors are very attractive for thin film Organic Photodetectors (OPDs) since they possess a number of desirable attributes for optical sensing including high absorption coefficients over visible and ultraviolet wavelengths and compatibility with large-area deposition processes such as ink-jet, screen printing, and solution processing. OPDs, in general, utilize a vertical device architecture where the photoactive organic semiconductor layers are sandwiched between top and bottom electrodes that provide electrical contact. More recently, an interest in utilizing a lateral device architecture instead of the vertical one, has emerged. In this architecture, the two contacts are positioned on the two sides of the photoactive material with respect to the direction of the incoming signal, separated by a small gap. However, the factors governing lateral OPDs’ photo-response are still not well understood. In this thesis, we fabricate top-contact lateral OPDs using a thermal evaporation only fabrication process. We study the factors governing both the dark and photo currents of lateral OPDs. The effect of the wide gap between the two electrodes on the current-voltage characteristics is discussed and the role of space charge limited conduction is investigated. The contributions in the photoresponse of light scattering through the active layers as well as the back reflection of light at the metallic contacts are emphasized. The reproducibility over repeated operation cycles of both dark and photo currents values is explored. Exposure to light of the lateral OPD is found to lead to a significant increase in the dark current. The role of the conductivity enhancement in the channel due to light-induced trap filling is investigated. External quantum efficiency and detectivity estimates are given for deep ultraviolet lateral (DUV) OPDs. A comparison with vertical DUV OPDs performances is provided. Finally, the use of a phosphorescent sensitizer doped in the absorbing bottom layer to improve top-contact lateral OPDs efficiency is discussed.

In this research, the contents are divided into two sections. In the first section, we investigated carrier transport behavior of organic optoelectronic devices by using space charge limited current(SCLC) method. Firstly, we fabricated a hole-only device (ITO/Spiro-MeOTAD/Al) for Sprio-MeOTAD and the current density¡V voltage(J-V) characteristics of the device was measured. The J-V characteristics of the device do not match with SCLCs very well at high voltage since the number of hole injection was not enough to achieve SCLCs condition. To enhance the injection of hole carrier into the organic layer, a MoO3 buffer layer was inserted between ITO electrode and organic layer. The current density in device with MoO3 buffer layer achieved 5 times enhancement, indicating that the concentration of hole in MoO3 device is increment. Hence, we succeeded in making the J-V characteristics of the hole-only device to match with SCLCs well at high voltage, and the hole mobility of Sprio-MeOTAD estimated by SCLCs was 1.44¡Ñ10-4cm2/Vs. Li salt was also doped into Sprio-MeOTAD as an n-type dopant. We found that Li salt could form hole-traps in Sprio-MeOTAD, which reduced hole carriers in Spiro-MeOTAD. The current density of the device was decreased, and the device could not achieve SCLCs condition at high voltage. In the second section, we use two novel iridium(Ir) complexes to fabricate blue-green emitting devices by solution process. First, we obtained optimum concentration of phosphorescent emitters by controlling of the dopants concentration. Then, we adjusted the thickness of the electron injection layer, hole injection layer, and emission layer to design more suitable device structure. Finally, we succeeded in fabricating blue-green light emitting devices. The maxima luminescence was 37.7cd/m2 and maxima current efficiency was 1.68 cd/A in the Ir complex based devices.

Organic semiconductors are very attractive for thin film Organic Photodetectors (OPDs) since they possess a number of desirable attributes for optical sensing including high absorption coefficients over visible and ultraviolet wavelengths and compatibility with large-area deposition processes such as ink-jet, screen printing, and solution processing. OPDs, in general, utilize a vertical device architecture where the photoactive organic semiconductor layers are sandwiched between top and bottom electrodes that provide electrical contact. More recently, an interest in utilizing a lateral device architecture instead of the vertical one, has emerged. In this architecture, the two contacts are positioned on the two sides of the photoactive material with respect to the direction of the incoming signal, separated by a small gap. However, the factors governing lateral OPDs’ photo-response are still not well understood. In this thesis, we fabricate top-contact lateral OPDs using a thermal evaporation only fabrication process. We study the factors governing both the dark and photo currents of lateral OPDs. The effect of the wide gap between the two electrodes on the current-voltage characteristics is discussed and the role of space charge limited conduction is investigated. The contributions in the photoresponse of light scattering through the active layers as well as the back reflection of light at the metallic contacts are emphasized. The reproducibility over repeated operation cycles of both dark and photo currents values is explored. Exposure to light of the lateral OPD is found to lead to a significant increase in the dark current. The role of the conductivity enhancement in the channel due to light-induced trap filling is investigated. External quantum efficiency and detectivity estimates are given for deep ultraviolet lateral (DUV) OPDs. A comparison with vertical DUV OPDs performances is provided. Finally, the use of a phosphorescent sensitizer doped in the absorbing bottom layer to improve top-contact lateral OPDs efficiency is discussed.

Resistive random access memory (RRAM), based on a two-terminal resistive switching device with a switching element sandwiched between two electrodes, has been an attractive candidate to replace flash memory owing to its simple structure, excellent scaling potential, low power consumption, high switching speed, and good retention and endurance properties. However, due to the current limited understanding of the device mechanism, RRAMs research are still facing several issues and challenges including instability of operation parameters, the relatively high reset current, the limited retention and the unsatisfactory endurance. In this study, we investigated the switching mechanisms, conditions and applications of oxygen vacancy (Vo) filament formation in resistive memories. By studying the behavior of conductive Vo nanofilaments in several metal/oxide/metal resistive devices of various thicknesses of oxides, a resulting model supported by the data postulates that there are two distinct modes of creating oxygen vacancies: i) a conventional bulk mode creation, and ii) surface mode of creating oxygen vacancies at the active metal-dielectric interface. A further investigation of conduction mechanism for the Vo CF only based memories is conducted through insertion of a thin layer of titanium into a Pt/ Ta2O5/Pt structure to form a Pt/Ti/ Ta2O5/Pt device. A space charge limited (SCL) conduction model is used to explain the experimental data regarding SET process at low voltage ranges. The evidence for existence of composite copper/oxygen vacancy nanofilaments is presented. The innovative use of hybrid Vo/Cu nanofilament will potentially overcome high forming voltage and gas accumulation issues. A resistive floating electrode device (RFED) is designed to allow the generation of current/voltage pulses that can be controlled by three independent technology parameters. Our recent research has demonstrated that in a Cu/TaOx/Pt resistive device multiple Cu conductive nanofilaments can be formed and ruptured successively. Near the end of the study, quantized and partial quantized conductance is observed at room temperature in metal-insulator-metal structures with graphene submicron-sized nanoplatelets embedded in a 3-hexylthiophene (P3HT) polymer layer. As an organic memory, the device exhibits reliable memory operation with an ON/OFF ratio of more than 10. / Ph. D.

No description available.

<p dir="ltr">Many phenomena in physics, engineering, and biology depend strongly on geometry; however, deriving analytic (and sometimes numerical or simulation) solutions to describe these phenomena for realistic geometries may be challenging or impossible. This thesis applies coordinate invariant mathematics to describe several key multidisciplinary problems.</p><p dir="ltr">The first phenomenon that we explore is space-charge-limited current (SCLC), which corresponds to the maximum steady-state current that can be injected into a diode. First derived by Child and Langmuir and described by the eponymous Child-Langmuir law for a one-dimensional, planar diode, SCLC is critical for numerous applications, including electric thrusters, Hall thrusters, directed energy, high-power microwaves, vacuum nanotransistors, and satellites. The SCLC is a critical limit to operation and many studies have sought ways to exceed it; however, this requires better understanding of the SCLC in more realistic geometries, motivating extensions to nonplanar and multidimensional geometries. However, many devices employ a crossed-field geometry in which a magnetic field is applied orthogonal to the electric field to enhance power output. This thesis applies variational calculus and capacitance to derive two sets of solutions for the SCLC in nonplanar crossed-field diodes.</p><p dir="ltr">The first set of solutions is found using scale factors and variational calculus. Variational calculus minimizes the gap energy to solve for the path of least resistance. The scale factors, which are the lengths of the local basis vectors, generalize the process. Models can be produced in variational calculus using the spatial domain alone, eliminating the need for the time domain transformation required by all other crossed-field approaches. This approach creates a powerful, numerically solvable solution for the SCLC in any orthogonal geometry, although it may be computationally expensive.</p><p dir="ltr">The second set of solutions is created by treating the diode as a capacitor and using the capacitance equations to find the SCLC. After finding a planar solution, the solution was generalized by combining conformal mapping and magnetic field mapping by leveraging the innately geometric definition of the Hull cutoff. The Hull cutoff, the magnetic field required to insulate the electron flow, is calculated across geometries to find a mapping factor for the magnetic field allowing the application of conformal mapping, a method of geometric translation that is normally unusable in crossed-field systems. This approach greatly reduces the computational expense and complexity present in other crossed-field approaches.</p><p dir="ltr">In Chapter 4, we apply Lie point symmetries to extend theories for spherical avascular tumor growth to spheroidal tumor growth. Lie point symmetries reduce the complexity of ordinary differential equations, providing a simpler, and sometimes the only, path to a solution. In this chapter, we apply Lie point symmetries to four types of tumors: prolate and oblate spheroids without a necrotic core, an area of dead cells often found at the center of larger tumors, and prolate and oblate spheroids with a necrotic core. Lie point symmetries simplify the differential equations in all four cases and make it possible to solve the prolate spheroid without a necrotic core.</p><p dir="ltr">The results from this thesis provide valuable insight to computational physicists benchmarking particle-in-cell simulations for determining SCLC for crossed-field diodes. Additionally, elucidating the physical phenomena in more realistic diodes can facilitate further optimization for many applications of crossed fields, such as magnetrons. The tumor growth models demonstrate the applicability of this approach to a dramatically different problem and could provide value to characterizing more realistic shapes.</p>

Space-charge effects play a dominant role in many areas of physics. In high-power microwave devices using high-current, relativistic electron beams, it places a limit on the amount of radiation a device can produce. Because the beam's space-charge can actually reflect a portion of the beam, the ability to accurately predict the amount of current a device can carry is needed. This current value is known as the space-charge limited current. Because of the mathematical difficulties, this limit is typically estimated from a one-dimensional theory. This work presents a two-dimensional theory for calculating an upper-bound for the space-charge limited current of relativistic electron beams propagating in grounded coaxial drift tubes. Applicable to annular beams of arbitrary radius and thickness, the theory includes the effect introduced by a finite-length drift tube of circular cross-section. Using Green's second identity, the need to solve Poisson's equation is transferred to solving a Sturm-Liouville eigenvalue problem, which is easily solved by elementary methods. In general, the resulting eigenvalue, which is required to estimate the limiting current, must be numerically determined. However, analytic expressions can be found for frequently encountered limiting cases. Space-charge effects also produce the fundamental collective behavior found in plasmas, especially in plasma sheaths. A plasma sheath is the transition region between a bulk plasma and an adjacent plasma-facing surface. The sheath controls the loss of particles from the plasma in order to maintain neutrality. Using a fully kinetic theory, the problem of a planar sheath with a single-minimum electric potential profile is investigated. Appropriate for single charge-state ions of arbitrary temperature, the theory includes the emission of warm electrons from the surface as well as a net current through the sheath and is compared to particle-in-cell simulations. Approximate expressions are developed for estimating the sheath potential as well as the transition to space-charge saturation. The case of a space-charge limited sheath is discussed and compared to the familiar Child-Langmuir law.

Neste trabalho analisa-se o problema do transporte do feixe de elétrons em canhões de elétrons, estruturas periódicas de ímãs permanentes e em coletores de simples e múltiplos estágios. Essa análise é de relevância em projetos de dispositivos de micro-ondas de potência dos tipos amplicador klystron e válvula TWT. Determina-se a dinâmica das partículas a partir da solução da equação da trajetória que é derivada da força de Lorentz e da conservação de energia. A equação da trajetória obtida é diferencial de segunda ordem, não-linear e independentemente do tempo para o potencial generalizado. Utiliza-se o método de Runge-Kutta de 4a Ordem para integrar a equação da trajetória das partículas. Obtém-se o potencial escalar elétrico a partir da solução da equação de Poisson. Numericamente, obtêm-se os po- tenciais escalares elétricos e magnéticos, por meio do Método de Elementos Finitos (MEF). Ao longo do movimento de uma partícula, obtida a partir da solução da equação da trajetória, deposita-se carga elétrica. Utilizam-se macropartículas, uma vez que é praticamente impossível modelar cada partícula do problema, a partir do método Partícula na Célula (Particle in Cell - PIC). Neste caso, tem-se um problema acoplado para o potencial escalar elétrico e as trajetórias das macropartículas, uma vez que, as trajetórias das macropartículas dependem dos potenciais e estes, por sua vez, dependem das trajetórias. À convergência deste problema acoplado utiliza-se o Método das Aproximações Sucessivas (MAS). A plataforma desenvolvida, baseada nos métodos acima, compõe-se de duas ferramentas computacionais. A primeira, XMGUN, dedica-se ao projeto de: canhões de elétrons com grades e grades de sombreamento; e coletores de simples e múltiplos estágios considerando, ainda, a emissão de elétrons secundários. A segunda, XMAGUN, volta-se ao projeto de estruturas periódicas com ímãs permanentes. Afere-se o desempenho da ferramenta computacional XMGUN com o diodo plano de Pierce operando na condição em que a corrente é limitada pelas cargas espaciais. Por sua vez, verica-se o desempenho do XMAGUN por meio de simulações com estruturas do tipo PPM separadas pelo vácuo e na presença de pole pieces. Os resultados obtidos em todas as simulações convergiram satisfatoriamente para as soluções analíticas. Utilizando o XMGUN, projeta-se um canhão de elétrons com 30 kV de tensão de anodo e uma perveância de 1,37 Perv com capacidade de fornecer uma corrente elétrica de 7,1 A. Esse canhão tem uma malha com 2796 elementos e 5057 nós. As principais características geométricas do canhão de elétrons são: raio do catodo rc=14,6 mm; raio do disco do catodo rk =6,2 mm; e ângulo do eletrodo de focalização = 37. Neste caso, a velocidade transversal normalizada e o alcance do feixe zw observados são de 0,068 e 26,88 mm respectivamente. Obtém-se uma concordância superior a 93% em corrente e perveância com o EGUN. Utilizando, ainda, o XMGUN, são simulados coletores de simples e múltiplos estágios. O coletor de simples estágio apresenta 1612 nós e 2969 elementos, e o de 4 (quatro) estágios, 2496 nós e 4257 elementos. As tensões dos eletrodos do 1o, 2o, 3o e 4o estágio são de 9,45 kV, 8,65 kV, 6,45 kV e 3,45 kV respectivamente. Durante as simulações, devido à emissão de elétrons secundários, observa-se, para o coletor de simples estágio, macropartículas penetrando na região de deriva, fenômeno este indesejado, e não observado para o coletor de 4 (quatro) estágios. Considerando o XMAGUN, projeta-se um arranjo periódico com pole pieces e 5 (cinco) ímãs permanentes, capaz de fornecer um campo magnético, no centro da estrutura, de 0,42 T. Neste caso, a geometria do arranjo periódico obtida é: raio interno rm1 e externo rm2 do ímã permanente são iguais a 3,5 mm e 7,5 mm respectivamente; raio externo do pole piece r3 = 7,5 mm ; raio interno rf1 e externo rf2 da ponteira do pole piece são 1,6 mm e 3,05 mm respectivamente; espessura do ímã permanente T=2,95 mm; período magnético L =8,5 mm. A remanência do ímã permanente utilizada é de Br=0,85 T. A malha dessa estrutura periódica magnética apresenta pouco mais de 20.000 nós e 40.000 elementos. / In this paper we analyze the problem of transport of the electron beam in electron guns, periodic arrays of permanent magnets and collectors of simple and multiple stages. This analysis is of relevance in the design of power microwave devices such as klystron amplier and TWT valve. The dynamics of particles is determined from the solution of the equation of the trajectory that is derived from the Lorentz force and energy conservation law. The equation of the trajectory obtained is differential of second-order, non-linear and time independent for the generalized potential. It is used the Runge-Kutta 4th order method to integrate the equation of the trajectory of the particles. The electric scalar potential is obtained from the solution of the Poisson equation. Numerically, we obtain the electric and magnetic scalar potentials, using the Finite Element Method (FEM). Throughout the motion of a particle, obtained from the solution of the equation of the trajectory, electrical charge it is deposited. Macroparticles are used, since it is virtually impossible to model each particle of the problem, based on Particle in Cell scheme (Particle in Cell - PIC). In this case, there is a coupled problem for the electric scalar potential and the trajectories of the macroparticles, since these trajectories depend on the potential and the potential, in turn, depends on the trajectories. In order to abtain the convergence of this coupled problem, it used the Method of Successive Approximations (MSA). The platform developed, based on the above methods, consists of two computational tools. The rst, XMGUN, is dedicated to the project of: electron guns with grids and shadow-grids, and collectors of simple and multiple stages, where secondary electrons emission is considered. The second, XMAGUN, is used to the design of periodic permanent magnets structures. The XMGUN was benchmarked against the plan Pierce diode under space charge limited condiction. In turn, the XMAGUN was benchmarked against PPM like structures, separated by a vacuum and in the presence of pole pieces. The results, in all simulations, converged satisfactorily to the analytical solu- tions. Using XMGUN, it is designed an electron gun with 30 kV anode voltage, 1.37 Perv capable of supplying an electric current of 7.1 A. This gun has a mesh with 2796 elements and 5057 nodes. The main geometric characteristics of the electron gun are: cathode radius rc = 14.6 mm; cathode disc radius rk = 6.2 mm; and half cone angle = 37. In this case, the normalized transverse velocity and beam-waist distance from anode zw are 0.068 and 26.88 mm respectively. An agreement above 93% in current and perveance is found when compared with EGUN. XMGUN is also used to simulate single and multi stage collectors. The single-stage collector has 1612 nodes and 2969 elements, while the 4 (four) stages collector has 2496 nodes and 4257 we elements. The collector electrode voltages of the 1st, 2nd, 3rd and 4th stage are 9.45 kV 8.65 kV 3.45 kV 6.45 kV, respectively. During the simulations, due to yield of secondary electrons, for the single stage collector, it is observed macroparticles entering into the drift region, a phenomenon unwanted, and not observed for the 4 (four) stage collector. Whereas XMAGUN is projected at a periodic arrangement with pole pieces and 5 (ve) permanent magnets, capable of providing a magnetic eld in the center of the structure was 0.42 T. In this case, the geometry of the periodic arrangement is obtained: inner and outer radius of the permanent magnet rm1 = 3.5 mm and 7.5 mm respectively rm2 =; outer radius of the pole piece r3 = 7.5 mm, internal radius and external tip of the pole piece rf1=rf2 =1.6 mm and 3.05 mm respectively; permanent magnet thickness T = 2.95 mm magnetic period L = 8.5 mm. The remanence of the permanent magnet used is Br = 0.85 T. The net periodic structure of magnetic features little more than 20,000 nodes and 40,000 elements.

Neste trabalho analisa-se o problema do transporte do feixe de elétrons em canhões de elétrons, estruturas periódicas de ímãs permanentes e em coletores de simples e múltiplos estágios. Essa análise é de relevância em projetos de dispositivos de micro-ondas de potência dos tipos amplicador klystron e válvula TWT. Determina-se a dinâmica das partículas a partir da solução da equação da trajetória que é derivada da força de Lorentz e da conservação de energia. A equação da trajetória obtida é diferencial de segunda ordem, não-linear e independentemente do tempo para o potencial generalizado. Utiliza-se o método de Runge-Kutta de 4a Ordem para integrar a equação da trajetória das partículas. Obtém-se o potencial escalar elétrico a partir da solução da equação de Poisson. Numericamente, obtêm-se os po- tenciais escalares elétricos e magnéticos, por meio do Método de Elementos Finitos (MEF). Ao longo do movimento de uma partícula, obtida a partir da solução da equação da trajetória, deposita-se carga elétrica. Utilizam-se macropartículas, uma vez que é praticamente impossível modelar cada partícula do problema, a partir do método Partícula na Célula (Particle in Cell - PIC). Neste caso, tem-se um problema acoplado para o potencial escalar elétrico e as trajetórias das macropartículas, uma vez que, as trajetórias das macropartículas dependem dos potenciais e estes, por sua vez, dependem das trajetórias. À convergência deste problema acoplado utiliza-se o Método das Aproximações Sucessivas (MAS). A plataforma desenvolvida, baseada nos métodos acima, compõe-se de duas ferramentas computacionais. A primeira, XMGUN, dedica-se ao projeto de: canhões de elétrons com grades e grades de sombreamento; e coletores de simples e múltiplos estágios considerando, ainda, a emissão de elétrons secundários. A segunda, XMAGUN, volta-se ao projeto de estruturas periódicas com ímãs permanentes. Afere-se o desempenho da ferramenta computacional XMGUN com o diodo plano de Pierce operando na condição em que a corrente é limitada pelas cargas espaciais. Por sua vez, verica-se o desempenho do XMAGUN por meio de simulações com estruturas do tipo PPM separadas pelo vácuo e na presença de pole pieces. Os resultados obtidos em todas as simulações convergiram satisfatoriamente para as soluções analíticas. Utilizando o XMGUN, projeta-se um canhão de elétrons com 30 kV de tensão de anodo e uma perveância de 1,37 Perv com capacidade de fornecer uma corrente elétrica de 7,1 A. Esse canhão tem uma malha com 2796 elementos e 5057 nós. As principais características geométricas do canhão de elétrons são: raio do catodo rc=14,6 mm; raio do disco do catodo rk =6,2 mm; e ângulo do eletrodo de focalização = 37. Neste caso, a velocidade transversal normalizada e o alcance do feixe zw observados são de 0,068 e 26,88 mm respectivamente. Obtém-se uma concordância superior a 93% em corrente e perveância com o EGUN. Utilizando, ainda, o XMGUN, são simulados coletores de simples e múltiplos estágios. O coletor de simples estágio apresenta 1612 nós e 2969 elementos, e o de 4 (quatro) estágios, 2496 nós e 4257 elementos. As tensões dos eletrodos do 1o, 2o, 3o e 4o estágio são de 9,45 kV, 8,65 kV, 6,45 kV e 3,45 kV respectivamente. Durante as simulações, devido à emissão de elétrons secundários, observa-se, para o coletor de simples estágio, macropartículas penetrando na região de deriva, fenômeno este indesejado, e não observado para o coletor de 4 (quatro) estágios. Considerando o XMAGUN, projeta-se um arranjo periódico com pole pieces e 5 (cinco) ímãs permanentes, capaz de fornecer um campo magnético, no centro da estrutura, de 0,42 T. Neste caso, a geometria do arranjo periódico obtida é: raio interno rm1 e externo rm2 do ímã permanente são iguais a 3,5 mm e 7,5 mm respectivamente; raio externo do pole piece r3 = 7,5 mm ; raio interno rf1 e externo rf2 da ponteira do pole piece são 1,6 mm e 3,05 mm respectivamente; espessura do ímã permanente T=2,95 mm; período magnético L =8,5 mm. A remanência do ímã permanente utilizada é de Br=0,85 T. A malha dessa estrutura periódica magnética apresenta pouco mais de 20.000 nós e 40.000 elementos. / In this paper we analyze the problem of transport of the electron beam in electron guns, periodic arrays of permanent magnets and collectors of simple and multiple stages. This analysis is of relevance in the design of power microwave devices such as klystron amplier and TWT valve. The dynamics of particles is determined from the solution of the equation of the trajectory that is derived from the Lorentz force and energy conservation law. The equation of the trajectory obtained is differential of second-order, non-linear and time independent for the generalized potential. It is used the Runge-Kutta 4th order method to integrate the equation of the trajectory of the particles. The electric scalar potential is obtained from the solution of the Poisson equation. Numerically, we obtain the electric and magnetic scalar potentials, using the Finite Element Method (FEM). Throughout the motion of a particle, obtained from the solution of the equation of the trajectory, electrical charge it is deposited. Macroparticles are used, since it is virtually impossible to model each particle of the problem, based on Particle in Cell scheme (Particle in Cell - PIC). In this case, there is a coupled problem for the electric scalar potential and the trajectories of the macroparticles, since these trajectories depend on the potential and the potential, in turn, depends on the trajectories. In order to abtain the convergence of this coupled problem, it used the Method of Successive Approximations (MSA). The platform developed, based on the above methods, consists of two computational tools. The rst, XMGUN, is dedicated to the project of: electron guns with grids and shadow-grids, and collectors of simple and multiple stages, where secondary electrons emission is considered. The second, XMAGUN, is used to the design of periodic permanent magnets structures. The XMGUN was benchmarked against the plan Pierce diode under space charge limited condiction. In turn, the XMAGUN was benchmarked against PPM like structures, separated by a vacuum and in the presence of pole pieces. The results, in all simulations, converged satisfactorily to the analytical solu- tions. Using XMGUN, it is designed an electron gun with 30 kV anode voltage, 1.37 Perv capable of supplying an electric current of 7.1 A. This gun has a mesh with 2796 elements and 5057 nodes. The main geometric characteristics of the electron gun are: cathode radius rc = 14.6 mm; cathode disc radius rk = 6.2 mm; and half cone angle = 37. In this case, the normalized transverse velocity and beam-waist distance from anode zw are 0.068 and 26.88 mm respectively. An agreement above 93% in current and perveance is found when compared with EGUN. XMGUN is also used to simulate single and multi stage collectors. The single-stage collector has 1612 nodes and 2969 elements, while the 4 (four) stages collector has 2496 nodes and 4257 we elements. The collector electrode voltages of the 1st, 2nd, 3rd and 4th stage are 9.45 kV 8.65 kV 3.45 kV 6.45 kV, respectively. During the simulations, due to yield of secondary electrons, for the single stage collector, it is observed macroparticles entering into the drift region, a phenomenon unwanted, and not observed for the 4 (four) stage collector. Whereas XMAGUN is projected at a periodic arrangement with pole pieces and 5 (ve) permanent magnets, capable of providing a magnetic eld in the center of the structure was 0.42 T. In this case, the geometry of the periodic arrangement is obtained: inner and outer radius of the permanent magnet rm1 = 3.5 mm and 7.5 mm respectively rm2 =; outer radius of the pole piece r3 = 7.5 mm, internal radius and external tip of the pole piece rf1=rf2 =1.6 mm and 3.05 mm respectively; permanent magnet thickness T = 2.95 mm magnetic period L = 8.5 mm. The remanence of the permanent magnet used is Br = 0.85 T. The net periodic structure of magnetic features little more than 20,000 nodes and 40,000 elements.