Le travail présenté dans ce manuscrit a été effectué au sein de l’équipe de microélectronique de l’Institut de Recherche sur les lois Fondamentales de l’Univers (IRFU) du CEA. Il s’inscrit dans le contexte de la spectro-imagerie X et gamma pour la recherche en Astrophysique. Dans ce domaine, les futures expériences embarquées à bords de satellites nécessiteront des instruments d’imagerie à très hautes résolutions spatiales et énergétiques.La résolution spectrale d’une gamma-camera est dégradée par l’imperfection du détecteur lors de l’interaction photon-matière lui-même et par le bruit électronique. Si on ne peut réduire l’imprécision de conversion photon-charge du détecteur, on peut minimiser le bruit apporté par l’électronique de lecture. L’objectif de cette thèse est la conception d’une électronique intégrée de lecture de détecteur semi-conducteurs CdTe pixélisés pour gamma-caméra(s) compacte(s) et aboutable(s) sur 4 côtés à résolution spatiale « Fano limitée ». Les objectifs principaux de ce circuit intégré sont: un très bas bruit pour la mesure d’énergie des rayons-X, une très basse consommation, et une taille de canal de détection adaptée au pas des pixels CdTe. Pour concevoir une telle électronique, chaque paramètre contribuant au bruit doit être optimisé. L’hybridation entre l’électronique de lecture et le détecteur est également un paramètre clef qui fait généralement la résolution finale de l’instrument : en imposant une géométrie matricielle à l’ASIC adaptée au pas de 300 µm des pixels de CdTe, on peut espérer, réduire d’un facteur 10 la capacité parasite amenée par la connexion détecteur-électronique et améliorer d’autant le bruit électronique tout en conservant une densité de puissance constante. Une bonne connaissance des propriétés du détecteur nous permet alors d’extraire ses paramètres électroniques clefs pour concevoir l’architecture électronique de conversion et de filtrage optimale. Dans le cadre de cette thèse j’ai conçu deux circuits intégrés en technologies CMOS XFAB 0.18 µm. Le premier, Caterpylar, est destiné à caractériser cette nouvelle technologie, y compris en radiation, identifier un étage d’entrée pour le pixel adapté au détecteur, et valider par la mesure les résultats théoriques établis sur deux architectures de filtrage, semi gaussien et « Multi-Correlated Double Sampling » (MCDS), approchant l’efficacité du filtrage optimal et adaptées aux applications finales. Le deuxième circuit, D2R1, est un système complet, constitué de 256 canaux de lecture de détecteur CdTe, organisés dans une matrice de 16×16 pixels. Chaque canal comprend un préamplificateur de charge adapté à des pixels de 300 μm×300 μm, un opérateur de filtrage de type MCDS de profondeur programmable, d’un discriminateur auto-déclenché à bas seuil de détection programmable par canal. L’ASIC a été caractérisé sans détecteur et est en voie d’être hybridé à une matrice de CdTe très prochainement. Les résultats de caractérisations de la puce nue, en particulier en terme de produit puissance × bruit, sont excellents. La consommation de la puce est de 315 µW/ canal, la charge équivalente de bruit mesurée sur tous les canaux est de 29 électrons rms. Ces résultats valident le choix d’intégration d’un filtrage de type MCDS, qui est, à notre connaissance une première mondiale pour la lecture de détecteurs CdTe. Par ailleurs, ils nous permettent d’envisager d’excellentes résolutions spectrales de l’ensemble détecteur+ASIC, de l’ordre de 600 eV FWHM à 60 keV. / The work presented in this thesis is part of a project where a new instrument is developed: a camera for hard X-rays imaging spectroscopy. It is dedicated to fundamental research for observations in astrophysics, at wavelengths which can only be observed using space-borne instruments. In this domain the spectroscopic accuracy as well as the imaging details are of high importance. This work has been realized at CEA/IRFU (Institut de Recherche sur les lois Fondamentales de l’Univers), which has a long-standing and successful experience in instruments for high energy physics and space physics instrumentation. The objective of this thesis is the design of the readout electronics for a pixelated CdTe detector, suitable for a stacked assembly. The principal parameters of this integrated circuit are a very low noise for reaching a good accuracy in X-ray energy measurement, very low power consumption, a critical parameter in space-borne applications, and a small dead area for the full system combining the detector and the readout electronics. In this work I have studied the limits of these three parameters in order to optimize the circuit.In terms of the spectral resolution, two categories of noise had to be distinguished to determine the final performance. The first is the Fano noise limit. related to detector interaction statistics, which cannot be eliminated. The second is the electronic noise, also unavoidable; however it can be minimized through optimization of the detection chain. Within the detector, establishing a small pixel pitch of 300 μm reduces the input capacitance and the dark current. This limits the effects of the electronic noise. Also in order to limit the input capacitance the future camera is designed as a stacked assembly of the detector with the readout ASIC. This allows to reach extremely good input parameters seen by the readout electronics: a capacitance in range of 0.3 pF - 1 pF and a dark current below 5 pA.In the frame of this thesis I have designed two ASICs. The first one, Caterpylar, is a testchip, which enables the characterization of differently dimensioned CSA circuits to choose the most suitable one for the final application. It is optimized for readout of the target CdTe detector with 300 μm pixel pitch and the corresponding input parameters. With this circuit I have also analyzed possible filtering methods, in particular the semi-Gaussian shaping and the Multi-Correlated Double Sampling (MCDS). Their comparison is preceded by the theoretical analysis of these shapers. The second ASIC D2R1 is a complete readout circuit, containing 256 channels to readout CdTe detector with the same number of pixels, arranged in 16×16 array. Each channel fits into a layout area of 300 μm × 300 μm. It is based on the MCDS processing with self-triggering capabilities. The mean electronic noise measured over all channels is 29 electrons rms when characterized without the detector. The corresponding power consumption is 315 μW⁄channel. With these results the future measurements with the detector give prospects for reaching an FWHM spectral resolution in the order of 600 eV at 60 keV.

Thesis (Ph. D.)--University of Missouri-Columbia, 2001. / Typescript. Vita. Includes bibliographical references (leaves 123-128). Also available on the Internet.

Thesis (Ph. D.)--University of Missouri-Columbia, 2001. / Typescript. Vita. Includes bibliographical references (leaves 123-128). Also available on the Internet.

Tandem solar cells fabricated from thin films provide promise of improved efficiency while keeping the processing costs low. CdSe as top cells are investigated in this work. CIGS has been a standardized process with lab efficiencies reaching 18% [53]. This dissertation focuses on the development of conductive window layer for the development of a high performance, high bandgap solar cell. ZnSe, Cu2-xSe, and ZnSexTe1-x are investigated as viable window layers of the top cell. ZnSe in undoped form forms a good junction with CdSe films, but the Voc from these devices could never exceed the 360mV mark, while the current densities approached 17.5mA/cm2 [61].To improve Voc's, the high contact energy at the ZnSe/Cu interface has to be overcome by replacing Cu with a metal having higher work function or doping the window layer to form a tunneling contact with Copper.Deposition of ZnSe from binary sources in presence of nitrogen plasma resulted in films with proper stoichiometry. However, doping could not be accomplished. ZnTe is easily dopable, and was the next alternative. ZnTe doping in presence of Nitrogen plasma resulted in Zn rich films. Hence doping of the ternary compound ZnSexTe1-x was considered. This work focuses on studying the effects of compositional variation on the conductivity of the ZnSexTe1-x films. ZnSexTe1-x films were doped using Nitrogen. Films were deposited by co-evaporation from ZnTe, ZnSe and Se sources. Te/Se ratio was varied by varying the ZnTe thickness and Se Thickness. Films with Zn/Group VI ratio close to 1 were measured for conductivity using IV measurements. Highest conductivity of 2* 10-8 ohm-cm was obtained at ZnSe, ZnTe, and Se thicknesses of 2000Ã?, 1500Ã?, and 500Ã? respectively. The actual carrier concentration could be concealed by the current limiting Cu contacts. All films with Zn/Group VI ratio close to 1 showed slight conductivity in the 10-10 ohm-cm range. Layered ZnSexTe1-x Films doped with Nitrogen had targeted Zn/Group VI ratio of 1, but with a higher Te content. The films were also slightly conductive, in the 10-10 ohm-cm range. The mechanism limiting the doping in all the films seems to be the same.

This work focuses on the growth of vertically aligned CdTe nanowire arrays of controllable diameter and length using cathodic electro deposition in anodized alumina templates. This step was followed by annealing at 250° C in a reducing environment (95% Ar + 5% H2). AAO template over ITO-glass was used as starting template for the device fabrication. The deposited nanowires showed nanocrystalline cubic phase structures with a strong preference in [111] direction. First gold (Au) was deposited into AAO using cathodic electro deposition. This was followed by CdTe deposition into the pore. Gold was deposited first as it aids the growth of CdTe inside AAO and it makes Schottky contact with the deposited n type CdTe. CdTe was determined to be n-type from the fact that back to back diode was obtained with Au-CdTe-Au test structure. Aluminum (Al) was sputtered on the top to make the ohmic contact to the n type CdTe deposited in AAO. Analysis of Schottky diodes yielded a diode ideality factor of 10.03 under dark and 10.08 under light and reverse saturation current density of 34.9μA/cm2 under dark and 39.7μA/cm2 under light.

Solar cells based on CdTe absorbers are attractive due to the optimal direct band gap energy and large absorption coefficient of CdTe, however, their performance and commercialization is hindered by the lack of reliable p-type contacts. CdTe has a low carrier concentration and a large electron affinity, which results in a requirement of non-realistic work functions for metals to be used as back contacts in the solar cell. Even noble metals such as Ag present a significantly large potential barrier for holes, thereby reducing the hole current through the semiconductor/metal interface. Several attempts to resolve this challenge have been tried, however, many drawbacks have been encountered. Two particular systems, namely Cu2Te thin films and CdTe/ZnTe strained-layer superlattices, are investigated for their potential use as ohmic contacts in CdTe solar cells. A detailed analysis of the optical, electrical, and structural properties of Cu2Te thin films deposited by magnetron sputtering is presented. It is shown that these films have an indirect band gap and highly degenerate semiconductor behavior. The large p-type carrier concentration of Cu2Te films is highly desirable for the application of Cu2Te as a p-type contact to CdTe. In-depth studies of optical transitions and miniband transport in strained-layer CdTe/ZnTe superlattices are presented as well. The band offsets between CdTe and ZnTe were determined by comparison of measured and calculated optical transitions. Superlattice structures that offer best contact performance have been identified by use of tunneling probability simulations. Characterization of CdTe solar cells with above mentioned contacts indicated that contacts based on CdTe/ZnTe superlattices are a viable Cu free option for stable and reliable p-type contacts in CdTe solar cell. The contact performance of Cu2Te thin films was comparable to that of CdTe/ZnTe superlattices and both demonstrated an advantage over contacts based on ZnTe:N thin films which were used a standard.

This thesis reports the fabrication and characterization of long wavelength infrared mercury cadmium telluride (Hg1-xCdxTe) photodiodes and 128x128 focal plane arrays grown on lattice matched cadmium zinc telluride (Cd1-yZnyTe) substrates by metal organic vapor phase epitaxy (MOVPE). The dark current modeling of 33x33 mm2 Hg1-xCdxTe photodiodes has shown the dark current is dominated by trap assisted tunneling under small reverse bias voltages typically used to bias these detectors. The dominant dark current mechanisms under high reverse bias and low forward bias are band&ndash / to&ndash / band tunneling and generation&ndash / recombination, respectively. The photodiodes have yielded a peak 77 K detectivity of 3.2x1010 cm&amp / #8730 / Hz/W with a cut-off wavelength (50%) of 10.92 mm. It has also been found that the 1/f noise current of the detectors at 1 Hz is related to the trap-assisted tunneling current through the empirical relation in=&amp / #945 / TAT(ITAT)&amp / #946 / with &amp / #945 / TAT=7.0 x 10-5 and &amp / #946 / =0.65. In the course of the focal plane array (FPA) fabrication process development work, ohmic contact formation on p-type Hg1-xCdxTe and mesa wet etch were studied in detail. Contacts with chromium, gold, platinum and copper on p-type Hg1-xCdxTe resulted in bad ohmic contacts, which did not seem to improve with annealing. On the other hand a HgTe cap layer on p-type Hg1-xCdxTe resulted in good ohmic contact with acceptably low resistance. Among the etchants studied for mesa etching of the diode structures, Br2/HBr solution yielded the best performance. After developing all of the steps of FPA processing, 128x128 Hg1-xCdxTe FPAs were successfully fabricated and tested in a thermal imager. While thermal imaging was performed with the FPAs, high nonuniformity of the material and low R0A product of the pixels did not allow high sensitivity imaging.

Thesis (Ph. D.)--West Virginia University, 2006. / Title from document title page. Document formatted into pages; contains xiv, 141 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 135-141).

Regensburg, Universiẗat, Diss., 2003.

abstract: This study analyzes the thermoelectric phenomena of nanoparticle suspensions, which are composed of liquid and solid nanoparticles that show a relatively stable Seebeck coefficient as bulk solids near room temperature. The approach is to explore the thermoelectric character of the nanoparticle suspensions, predict the outcome of the experiment and compare the experimental data with anticipated results. In the experiment, the nanoparticle suspension is contained in a 15cm*2.5cm*2.5cm glass container, the temperature gradient ranges from 20 °C to 60 °C, and room temperature fluctuates from 20 °C to 23°C. The measured nanoparticles include multiwall carbon nanotubes, aluminum dioxide and bismuth telluride. A temperature gradient from 20 °C to 60 °C is imposed along the length of the container, and the resulting voltage (if any) is measured. Both heating and cooling processes are measured. With three different nanoparticle suspensions (carbon nano tubes, Al2O3 nanoparticles and Bi2Te3 nanoparticles), the correlation between temperature gradient and voltage is correspondingly 8%, 38% and 96%. A comparison of results calculated from the bulk Seebeck coefficients with our measured results indicate that the Seebeck coefficient measured for each suspension is much more than anticipated, which indicates that the thermophoresis effect could have enhanced the voltage. Further research with a closed-loop system might be able to affirm the results of this study. / Dissertation/Thesis / M.S. Mechanical Engineering 2010