Global ETD Search

141	The astrophysical signatures of chameleon-like scalar fields Schelpe, Camilla Amadea Oxtoby January 2012 (has links) No description available. 500 Scalar field theory
142	High-performance light-emitting polymer field-effect transistors Gwinner, Michael Christian January 2012 (has links) No description available. 530 Field-effect transistors
143	Static characteristics and a low-frequency model for the four-terminal MOS transistor Balda, Raymond Joseph, 1942- January 1967 (has links) No description available. Field-effect transistors. Semiconductors.
144	Frequency performance of four terminal field-effect transistors Hudson, Pete Henry, 1940- January 1964 (has links) No description available. Field-effect transistors.
145	Transient performance of arbitrarily doped four terminal field-effect transistors Gray, Paul R., 1942- January 1965 (has links) No description available. Field-effect transistors.
146	Systematic modeling of the metal-oxide-semiconductor field effect transistor Clements, John Lawrence, 1940- January 1965 (has links) No description available. Field-effect transistors.
147	The relationship between the duration of panicle development and uniformity of seed size in oats (Avena sativa, L.). Deslauriers, Christiane. January 1981 (has links) No description available. Oats Grain -- Field experiments
148	Survey of techniques for improving performance of organic transistors Chien, Yu-Mo, 1980- January 2007 (has links) Organic field-effect transistors (OFETs) with region-regular poly(3-hexylthiophene) (rr-P3HT) as active semiconductor were fabricated and characterized. Various methods for improving device performance were investigated. These methods include: the use of dip coating technique (rather than spin coating), thermal annealing, polymer doping with iron chloride (FeCl 3), and stamping of "dry" poly(dimethylsiloxane) (PDMS) stamp before polymer deposition. / Through experimental results, it is clear that thermal annealing increases charge carrier mobility of P3HT OFETs. On average an increase of four times in charge mobility was observed after thermal annealing was performed. Dip coated samples also resulted in higher mobility values than spin coated samples. Highest charge mobility value achieved were was &sim;0.02 cm2/Vs for dip coated samples, where as the highest value for spin coated devices was around 6e-3 cm2/Vs. / "Dry" stamping of a PDMS devices yielded devices with higher mobility values by around 100% compared to unstamped counterparts. These devices also exhibited lower parasitic leakage currents. / Devices doped with FeCl3 did not perform very well. It is suspected that it was increased so much that it became impossible to turn off the devices. Organic field-effect transistors.
149	An analysis of aggregated effectiveness for indirect artillery fire on fixed targets Alexander, Robert Michael 08 1900 (has links) No description available. Artillery, Field and mountain
150	Hellmann-Feynman theorem in some classical field theories by François Bégin. Bégin, François. January 1986 (has links) No description available. Field theory (Physics)

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