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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1081

Ultraviolet stabilization and performance enhancement of nanostructured humidity sensors

Smetaniuk, Daniel Unknown Date
No description available.
1082

Thin-Film Pyrolysis of Asphaltenes and Catalytic Gasification of Bitumen Coke

Karimi, Arash Unknown Date
No description available.
1083

Fabrication and characterization of a solar cell using an aluminium p-doped layer in the hot-wire chemical vapour deposition process

Kotsedi, Lebogang January 2010 (has links)
<p>When the amorphous silicon (a-Si) dangling bonds are bonded to hydrogen the concentration of the dangling bond is decreased. The resulting film is called hydrogenated amorphous silicon (a-Si:H). The reduction in the dangling bonds concentration improves the optoelectrical properties of the film. The improved properties of a-Si:H makes it possible to manufacture electronic devices including a solar cell. A solar cell device based on the hydrogenated amorphous silicon (a-Si:H) was fabricated using the Hot-Wire Chemical Vapour Deposition (HWCVD). When an n-i-p solar cell configuration is grown, the norm is that the p-doped layer is deposited from a mixture of silane (SiH4) gas with diborane (B2H6). The boron atoms from diborane bonds to the silicon atoms and because of the number of the valance electrons, the grown film becomes a p-type film. Aluminium is a group 3B element and has the same valence electrons as boron, hence it will also produce a p-type film when it bonds with silicon. In this study the p-doped layer is grown from the co-deposition of a-Si:H from SiH4 with aluminium evaporation resulting in a crystallized, p-doped thin film. When this thin film is used in the n-i-p cell configuration, the device shows photo-voltaic activity. The intrinsic layer and the n-type layers for the solar cell were grown from SiH4 gas and Phosphine (PH3) gas diluted in SiH4 respectively. The individual layers of the solar cell device were characterized for both their optical and electrical properties. This was done using a variety of experimental techniques. The analyzed results from the characterization techniques showed the films to be of device quality standard. The analysed results of the ptype layer grown from aluminium showed the film to be successfully crystallized and doped. A fully functional solar cell was fabricated from these layers and the cell showed photovoltaic activity.<br /> &nbsp / </p>
1084

PARTIALLY HALOGENATED ACENES AND HETEROACENES FOR ORGANIC ELECTRONICS

Purushothaman, Balaji 01 January 2011 (has links)
Inorganic materials have dominated electronic applications such as photovoltaic cells, thin film transistors (TFTs) and light emitting diodes (LEDs). However developments in the field of organic electronics over the past three decades have enabled the use of organic materials in these devices. While significant improvements have been made to improve their electronic properties there are several road blocks towards commercial application. One of the significant obstacles is the poor charge carrier mobility associated with organic semiconductors processed by well established printing methods. The goal of my research project is to improve the charge carrier mobility of solution cast films of acene semiconductors by partial halogenation and heteroatom substitution. Spin coated films of triisopropylsilylethynylated difluoropentacene exhibited higher hole mobility compared to TIPS pentacene due to contact induced nucleation of pentacene on perfluorobenzenethiol treated gold electrodes. The success of this project allowed me to further investigate the effect of degree of fluorination on the electronic properties of pentacene. A series of trialkylsilylethynylated tetrafluoro and octafluoropentacenes were synthesized and their performances in thin film transistors and solar cells were explored. Solar cells made from these materials using poly(3-hexylthiophene) as donor exhibited poor open circuit voltages (Voc) resulting in low power conversion efficiency (PCE). Better device performances were achieved using pentacenes having single halogen substituent. In order to improve the charge carrier mobility in TFTs soluble trialkylsilylethynylated hexacenes were explored. However these molecules exhibited a greater tendency to photo-dimerize in solution and solid state. Partial halogenation was used as a tool to improve the solution stability of reactive hexacene. The improved solution stability of partially halogenated hexacenes allowed me to successfully extend this approach to heptacene and nonacene. Finally a series of new trialkylsilylethynylated anthradiselenophenes were synthesized to improve molecular ordering in the solid state by increasing non-bonding Se – Se interaction. However single crystal x-ray diffraction studies revealed no such interaction between the acene chromophore resulting in poor device performance.
1085

On-chip dielectric cohesive fracture characterization and mitigation investigation through off-chip carbon nanotube interconnects

Ginga, Nicholas J. 27 August 2014 (has links)
The cohesive fracture of thin films is a concern for the reliability of many devices in microelectronics, MEMS, photovoltaics, and other applications. In microelectronic packaging the cohesive fracture toughness has become a concern with new low-k dielectric materials currently being used. To obtain the low-k values needed to meet electrical performance goals, the mechanical strength of the material has decreased. This has resulted in cohesive cracks occurring in the Back End of Line (BEoL) dielectric layers of the microelectronic packages. These cracks lead to electronic failures and occur after thermal loading (due to CTE mismatch of materials) and mechanical loading. To prevent these cohesive cracks, it is necessary to measure the cohesive fracture resistance of these thin films to implement during the design and analysis process. Many of the current tests to measure the cohesive fracture resistance of thin films are based on methods developed for larger scale specimens. These methods can be difficult to apply to thin films due to their size and require mechanical fixturing, physical contact near the crack tip, and complicated stress fields. Therefore, a fixtureless cohesive fracture resistance measurement technique has been developed that utilizes photolithography fabrication processes. This technique uses a superlayer thin film with a high intrinsic stress deposited on top of the desired test material to drive cohesive fracture through the thickness of test material. In addition to developing a technique to measure the fracture resistance of dielectric thin films, the use of carbon nanotube (CNT) forests as off-chip interconnects is investigated as a potential method to mitigate the fracture of these materials. The compressive and tensile modulus of CNT forests is characterized, and it is seen that the modulus is several orders of magnitude less than that of a single straight CNT. The low-modulus CNT forest will help mechanically decouple the chip from the board and reduce stress occurring in the dielectric layers as compared to the current technology of solder ball interconnects and therefore improve reliability. The mechanical performance of these CNT interconnects is investigated by creating a finite-element model of a flip chip electronic package utilizing CNT interconnects and comparing the chip stresses to a traditional solder ball interconnect scenario. Additionally, flip chips are fabricated with CNT forest interconnects, assembled to an FR4 substrate, and subjected to accelerated thermomechanical testing to experimentally investigate their performance.
1086

Vertical Thin Film Transistors for Large Area Electronics

Moradi, Maryam 06 November 2014 (has links)
The prospect of producing nanometer channel-length thin film transistors (TFTs) for active matrix addressed pixelated arrays opens up new high-performance applications in which the most amenable device topology is the vertical thin film transistor (VTFT) in view of its small area. The previous attempts at fabricating VTFTs have yielded devices with a high drain leakage current, a low ON/OFF current ratio, and no saturation behaviour in the output current at high drain voltages, all induced by short channel effects. To overcome these adversities, particularly dominant as the channel length approaches the nano-scale regime, the reduction of the gate dielectric thickness is essential. However, the problems with scaling the gate dielectric thickness are the high gate leakage current and early dielectric breakdown of the insulator, deteriorating the device performance and reliability. A novel ultra-thin SiNx film suitable for the application as the gate dielectric of short channel TFTs and VTFTs is developed. The deposition is performed in a standard 13.56MHz PECVD system with silane and ammonia precursor gasses diluted in nitrogen. The deposited 50nm SiNx films demonstrate excellent electrical characteristics in terms of a leakage current of 0.1 nA/cm?? and a breakdown electric field of 5.6MV/cm. Subsequently, the state of the art performances of 0.5??m channel length VTFTs with 50 and 30nm thick SiNx gate dielectrics are presented in this thesis. The transistors exhibit ON/OFF current ratios over 10^9, the subthreshold slopes as sharp as 0.23 V/dec, and leakage currents in the fA range. More significantly, a high associated yield is obtained for the fabrication of these devices on 3-inch rigid substrates. Finally, to illustrate the tremendous potential of the VTFT for the large area electronics, a 2.2-inch QVGA AMOLD display with in-pixel VTFT-based driver circuits is designed and fabricated. An outstanding value of 56% compared to the 30% produced by conventional technology is achieved as the aperture ratio of the display. Moreover, the initial measurement results reveal an excellent uniformity of the circuit elements.
1087

High-rate growth of hydrogenated amorphous and microcrystalline silicon for thin-film silicon solar cells using dynamic very-high frequency plasma-enhanced chemical vapor deposition

Zimmermann, Thomas 29 January 2014 (has links) (PDF)
Thin-film silicon tandem solar cells based on a hydrogenated amorphous silicon (a-Si:H) top-cell and a hydrogenated microcrystalline silicon (μc-Si:H) bottom-cell are a promising photovoltaic technology as they use a combination of absorber materials that is ideally suited for the solar spectrum. Additionally, the involved materials are abundant and non-toxic which is important for the manufacturing and application on a large scale. One of the most important factors for the application of photovoltaic technologies is the cost per watt. There are several ways to reduce this figure: increasing the efficiency of the solar cells, reducing the material consumption and increasing the throughput of the manufacturing equipment. The use of very-high frequencies has been proven to be beneficial for the material quality at high deposition rates thus enabling a high throughput and high solar cell efficiencies. In the present work a scalable very-high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique for state-of-the-art solar cells is developed. Linear plasma sources are applied which facilitate the use of very-high frequencies on large areas without compromising on the homogeneity of the deposition process. The linear plasma sources require a dynamic deposition process with the substrate passing by the electrodes in order to achieve a homogeneous deposition on large areas. State-of-the-art static radio-frequency (RF) PECVD processes are used as a reference in order to assess the potential of a dynamic VHF-PECVD technique for the growth of high-quality a-Si:H and μc-Si:H absorber layers at high rates. In chapter 4 the influence of the deposition process of the μc-Si:H i-layer on the solar cell performance is studied for static deposition processes. It is shown that the correlation between the i-layer growth rate, its crystallinity and the solar cell performance is similar for VHF- and RF-PECVD processes despite the different electrode configurations, excitation frequencies and process regimes. It is found that solar cells incorporating i-layers grown statically using VHF-PECVD processes obtain a state-of-the-art efficiency close to 8 % for growth rates up to 1.4 nm/s compared to 0.53 nm/s for RF-PECVD processes. The influence of dynamic deposition processes on the performance of μc-Si:H solar cells is studied. It is found that μc-Si:H solar cells incorporating dynamically grown i-layers obtain an efficiency of 7.3 % at a deposition rate of 0.95 nm/s. There is a small negative influence of the dynamic deposition process on the solar cell efficiency compared to static deposition processes which is related to the changing growth conditions the substrate encounters during a dynamic i-layer deposition process. The changes in gas composition during a dynamic i-layer deposition process using the linear plasma sources are studied systematically using a static RF-PECVD regime and applying a time-dependent gas composition. The results show that the changes in the gas composition affect the solar cell performance if they exceed a critical level. In chapter 5 dynamic VHF-PECVD processes for a-Si:H are developed in order to investigate the influence of the i-layer growth rate, process parameters and deposition technique on the solar performance and light-induced degradation. The results in this work indicate that a-Si:H solar cells incorporating i-layers grown dynamically by VHF-PECVD using linear plasma sources perform as good and better as solar cells with i-layers grown statically by RF-PECVD at the same deposition rate. State-of-the-art stabilized a-Si:H solar cell efficiencies of 7.6 % are obtained at a growth rate of 0.35 nm/s using dynamic VHF-PECVD processes. It is found that the stabilized efficiency of the a-Si:H solar cells strongly decreases with the i-layer deposition rate. A simplified model is presented that is used to obtain an estimate for the deposition rate dependent efficiency of an a-Si:H/μc-Si:H tandem solar cell based on the photovoltaic parameters of the single-junction solar cells. The aim is to investigate the individual influences of the a-Si:H and μc-Si:H absorber layer deposition rates on the performance of the tandem solar cell. The results show that a high deposition rate of the μc-Si:H absorber layer has a much higher potential for reducing the total deposition time of the absorber layers compared to high deposition rates for the a-Si:H absorber layer. Additionally, it is found that high deposition rates for a-Si:H have a strong negative impact on the tandem solar cell performance while the tandem solar cell efficiency remains almost constant for higher μc-Si:H deposition rates. It is concluded that the deposition rate of the μc-Si:H absorber layer is key to reduce the total deposition time without compromising on the tandem solar cell performance. The developed VHF-PECVD technique using linear plasma sources is capable of meeting this criterion while promoting a path to scale the processes to large substrate areas.
1088

Strategies to Improve Solid Phase Microextraction Sensitivity: Temperature, Geometry and Sorbent Effects

Jiang, Ruifen January 2013 (has links)
Solid phase microextraction (SPME) has been widely used in a variety of sample matrices and proven to be a simple, fast and solvent-free sample preparation technique. A challenging limitation in the further development of this technique has been the insufficient sensitivity for some trace applications. This limitation lies mainly in the small volume of the extraction phase. According to the fundamentals of SPME, different strategies can be employed to achieve higher sensitivity for SPME sampling. These include cooling down the extraction phase, preparing a high capacity particle-loading extraction phase, as well as using a thin film with high surface area-to-volume ratio as the extraction phase. In this thesis, four sampling approaches were developed for high sensitivity sampling by employing cold fiber, thin film, cooling membrane and particle loading membrane as sampling tools. These proposed methods were applied to liquid, solid and particularly trace gas analysis. First, a fully automated cold fiber device that improves the sensitivity of the technique by cooling down the extraction phase was developed. This device was coupled to a GERSTEL® MultiPurpose Sampler (MPS 2), and applied to the analysis of volatiles and semi-volatiles in aqueous and solid matrices. The proposed device was thoroughly evaluated for its extraction performance, robustness, reproducibility and reliability by gas chromatograph/mass spectrometer (GC/MS). The evaluation of the automated cold fiber device was carried out using a group of compounds characterized by different volatilities and polarities. Extraction efficiency and analytical figures of merit were compared to commercial SPME fibers. In the analysis of aqueous standard samples, the automated cold fiber device showed a significant improvement in extraction efficiency when compared to commercial polydimethylsiloxane (PDMS) and non-cooled cold fiber. This was achieved due to the low temperature of the coating during sampling. Results from the cold fiber and commercial divinylbenzene/carboxen/polydimethylsiloxane (DVB/CAR/PDMS) fiber analysis of solid sample matrices were obtained and compared. Results demonstrated that the temperature gap between the sample matrix and the coating significantly improved the distribution coefficient, and consequently, the extraction amount. The newly automated cold fiber device presents a platform for headspace analysis of volatiles and semi-volatiles for a large number of samples, with improved throughput and sensitivity. Thin film microextraction (TFME) improves the sensitivity by employing a membrane with a high surface area-to-volume ratio as the extraction phase. In Chapter 3, a simple non-invasive sample preparation method using TFME is proposed for sampling volatile skin emissions. Evaluation experiments were conducted to test the reproducibility of the sampling device, the effect of the membrane size, and the method for storage. Results supported the reproducibility of multi-membrane sampling, and demonstrated that sampling efficiency can be improved using a larger membrane. However, ability to control the sampling environment and time was proved to be critical in order to obtain reliable information; the in vivo skin emission sampling was also influenced by skin metabolism and environmental conditions. Next, the method of storage was fully investigated for the membrane device before and after sampling. This investigation of storage permitted the sampling and instrument analysis to be conducted at different locations. Finally, the developed skin sampling device was applied in the identification of dietary biomarkers after garlic and alcohol ingestion. In this experiment, the previously reported potential biomarkers dimethyl sulphone, allyl methyl sulfide and allyl mercaptan were detected after garlic intake, and ethanol was detected after the ingestion of alcohol. Experiments were also conducted in the analysis of volatile organic compounds (VOCs) from upper back, forearm and back thigh of the body on the same individual. Results showed that 27 compounds can be detected from all of the 3 locations. However, these compounds were quantitatively different. In addition, sampling of the upper back, where the density of sebaceous glands is relatively high, detected more compounds than the other regions. In Chapter 4, a novel sample preparation method that combines the advantages of cold fiber and thin film was developed to achieve the high extraction efficiency necessary for high sensitivity gas sampling. A cooling sampling device was developed for the thin film microextraction. Method development for this sampling approach included evaluation of membrane temperature effect, membrane size effect, air flow rate and humidity effect. Results showed that high sensitivity for equilibrium sampling can be achieved by either cooling down the membrane and/or using a large volume extraction phase. On the other hand, for pre-equilibrium extraction, in which the extracted amount was mainly determined by membrane surface area and diffusion coefficient, high sensitivity was obtained by thin membranes with a large surface area and/or high sampling flow rate. In addition, humidity evaluations showed no significant effect on extraction efficiency due to the absorption property of the liquid extraction phase. Next, the limit of detection (LOD) and reproducibility of the developed cooling membrane gas sampling method were evaluated. LOD with a membrane radius of 1 cm at room temperature sampling were 9.24 ng/L, 0.12 ng/L, 0.10 ng/L for limonene, cinnamaldehyde and 2-pentadecanone, respectively. Intra- and inter-membrane sampling reproducibility had a relative standard deviation (RSD%) lower than 8% and 13%, respectively. Results uniformly demonstrated that the proposed cooling membrane device could serve as a powerful tool for gas in trace analysis. In Chapter 5, a particle-loading membrane was developed to combine advantages of high distribution coefficient and high surface area geometry, and applied in trace gas sampling. Bar coating, a simple and easy preparation method was applied in the preparation of the DVB/PDMS membrane. Membrane morphology, particle ratio, membrane size and extraction efficiency were fully evaluated for the prepared membrane. Results show that the DVB particles are uniformly distributed in the PDMS base. The addition of a DVB particle enhanced the stiffness of the membrane to some extent, and improved the extraction capacity of the membrane. Extraction capacity for benzene was enhanced by a factor of 100 when the membrane DVB particle ratio increased from 0% to 30%. Additionally, the prepared DVB/PDMS membrane provided higher extraction efficiency than pure PDMS membrane and DVB/PDMS fiber, especially for highly volatile and polar compounds. The high reproducibility of the prepared DVB/PDMS membrane in air sampling demonstrated the advantage of the bar coating preparation method, and also permitted quantitative analysis. Last, the prepared particle-loading membrane was applied to semi-quantitative and quantitative analysis of indoor and outdoor air, respectively. Both the equilibrium calibration method and diffusion-based calibration method were proposed for the quantitative analysis. Results showed that the high capacity particle-loading membrane can be used for monitoring trace analytes such as perfume components and air pollutants.
1089

Strategies to Improve Solid Phase Microextraction Sensitivity: Temperature, Geometry and Sorbent Effects

Jiang, Ruifen January 2013 (has links)
Solid phase microextraction (SPME) has been widely used in a variety of sample matrices and proven to be a simple, fast and solvent-free sample preparation technique. A challenging limitation in the further development of this technique has been the insufficient sensitivity for some trace applications. This limitation lies mainly in the small volume of the extraction phase. According to the fundamentals of SPME, different strategies can be employed to achieve higher sensitivity for SPME sampling. These include cooling down the extraction phase, preparing a high capacity particle-loading extraction phase, as well as using a thin film with high surface area-to-volume ratio as the extraction phase. In this thesis, four sampling approaches were developed for high sensitivity sampling by employing cold fiber, thin film, cooling membrane and particle loading membrane as sampling tools. These proposed methods were applied to liquid, solid and particularly trace gas analysis. First, a fully automated cold fiber device that improves the sensitivity of the technique by cooling down the extraction phase was developed. This device was coupled to a GERSTEL® MultiPurpose Sampler (MPS 2), and applied to the analysis of volatiles and semi-volatiles in aqueous and solid matrices. The proposed device was thoroughly evaluated for its extraction performance, robustness, reproducibility and reliability by gas chromatograph/mass spectrometer (GC/MS). The evaluation of the automated cold fiber device was carried out using a group of compounds characterized by different volatilities and polarities. Extraction efficiency and analytical figures of merit were compared to commercial SPME fibers. In the analysis of aqueous standard samples, the automated cold fiber device showed a significant improvement in extraction efficiency when compared to commercial polydimethylsiloxane (PDMS) and non-cooled cold fiber. This was achieved due to the low temperature of the coating during sampling. Results from the cold fiber and commercial divinylbenzene/carboxen/polydimethylsiloxane (DVB/CAR/PDMS) fiber analysis of solid sample matrices were obtained and compared. Results demonstrated that the temperature gap between the sample matrix and the coating significantly improved the distribution coefficient, and consequently, the extraction amount. The newly automated cold fiber device presents a platform for headspace analysis of volatiles and semi-volatiles for a large number of samples, with improved throughput and sensitivity. Thin film microextraction (TFME) improves the sensitivity by employing a membrane with a high surface area-to-volume ratio as the extraction phase. In Chapter 3, a simple non-invasive sample preparation method using TFME is proposed for sampling volatile skin emissions. Evaluation experiments were conducted to test the reproducibility of the sampling device, the effect of the membrane size, and the method for storage. Results supported the reproducibility of multi-membrane sampling, and demonstrated that sampling efficiency can be improved using a larger membrane. However, ability to control the sampling environment and time was proved to be critical in order to obtain reliable information; the in vivo skin emission sampling was also influenced by skin metabolism and environmental conditions. Next, the method of storage was fully investigated for the membrane device before and after sampling. This investigation of storage permitted the sampling and instrument analysis to be conducted at different locations. Finally, the developed skin sampling device was applied in the identification of dietary biomarkers after garlic and alcohol ingestion. In this experiment, the previously reported potential biomarkers dimethyl sulphone, allyl methyl sulfide and allyl mercaptan were detected after garlic intake, and ethanol was detected after the ingestion of alcohol. Experiments were also conducted in the analysis of volatile organic compounds (VOCs) from upper back, forearm and back thigh of the body on the same individual. Results showed that 27 compounds can be detected from all of the 3 locations. However, these compounds were quantitatively different. In addition, sampling of the upper back, where the density of sebaceous glands is relatively high, detected more compounds than the other regions. In Chapter 4, a novel sample preparation method that combines the advantages of cold fiber and thin film was developed to achieve the high extraction efficiency necessary for high sensitivity gas sampling. A cooling sampling device was developed for the thin film microextraction. Method development for this sampling approach included evaluation of membrane temperature effect, membrane size effect, air flow rate and humidity effect. Results showed that high sensitivity for equilibrium sampling can be achieved by either cooling down the membrane and/or using a large volume extraction phase. On the other hand, for pre-equilibrium extraction, in which the extracted amount was mainly determined by membrane surface area and diffusion coefficient, high sensitivity was obtained by thin membranes with a large surface area and/or high sampling flow rate. In addition, humidity evaluations showed no significant effect on extraction efficiency due to the absorption property of the liquid extraction phase. Next, the limit of detection (LOD) and reproducibility of the developed cooling membrane gas sampling method were evaluated. LOD with a membrane radius of 1 cm at room temperature sampling were 9.24 ng/L, 0.12 ng/L, 0.10 ng/L for limonene, cinnamaldehyde and 2-pentadecanone, respectively. Intra- and inter-membrane sampling reproducibility had a relative standard deviation (RSD%) lower than 8% and 13%, respectively. Results uniformly demonstrated that the proposed cooling membrane device could serve as a powerful tool for gas in trace analysis. In Chapter 5, a particle-loading membrane was developed to combine advantages of high distribution coefficient and high surface area geometry, and applied in trace gas sampling. Bar coating, a simple and easy preparation method was applied in the preparation of the DVB/PDMS membrane. Membrane morphology, particle ratio, membrane size and extraction efficiency were fully evaluated for the prepared membrane. Results show that the DVB particles are uniformly distributed in the PDMS base. The addition of a DVB particle enhanced the stiffness of the membrane to some extent, and improved the extraction capacity of the membrane. Extraction capacity for benzene was enhanced by a factor of 100 when the membrane DVB particle ratio increased from 0% to 30%. Additionally, the prepared DVB/PDMS membrane provided higher extraction efficiency than pure PDMS membrane and DVB/PDMS fiber, especially for highly volatile and polar compounds. The high reproducibility of the prepared DVB/PDMS membrane in air sampling demonstrated the advantage of the bar coating preparation method, and also permitted quantitative analysis. Last, the prepared particle-loading membrane was applied to semi-quantitative and quantitative analysis of indoor and outdoor air, respectively. Both the equilibrium calibration method and diffusion-based calibration method were proposed for the quantitative analysis. Results showed that the high capacity particle-loading membrane can be used for monitoring trace analytes such as perfume components and air pollutants.
1090

Impact of Mechanical Stress on the Electrical Stability of Flexible a-Si TFTs

Chow, Melissa Jane January 2011 (has links)
The development of functional flexible electronics is essential to enable applications such as conformal medical imagers, wearable health monitoring systems, and flexible light-weight displays. Intensive research on thin-film transistors (TFTs) is being conducted with the goal of producing high-performance devices for improved backplane electronics. However, there are many challenges regarding the performance of devices fabricated at low temperatures that are compatible with flexible plastic substrates. Prior work has reported on the change in TFT characteristics due to mechanical strain, with especially extensive data on the effect of strain on field-effect mobility. This thesis investigates the effect of gate-bias stress and elastic strain on the long-term stability of flexible low-temperature hydrogenated amorphous silicon (a-Si:H) TFTs, as the topic has yet to be explored systematically. An emphasis was placed on bias-stress measurements over time in order to obtain information on the physical mechanisms of instability. Drain current was measured over various intervals of time to track the degradation of devices due to metastability, and results were then compared across devices of various sizes under tensile, compressive, and zero strain. Transfer characteristics of the TFTs were also measured under the different conditions, to allow for extraction of parameters that would provide insight into the instability mechanisms. In addition to parameter extraction, the degradation and recovery of TFT output current was quantitatively compared for various bias-stress times across the different levels of strain. Finally, the instability mechanisms are modelled with a Markov system to further examine the effect of strain on long-term TFT operation. From the analysis of results, it was found that shallow charge trapping in the dielectric is the main mechanism of instability for short bias stress times, and did not seem to be greatly affected by strain. For longer bias stress times of over 10000 seconds, defect creation in the a-Si:H becomes a more significant contributor to instability. Both tension and compression increased defect creation compared to TFTs with zero applied strain. Compression appeared to cause the greatest increase in the rate of defect formation, likely by weakening Si-Si bonds in the a-Si:H. Tension appeared to cause a less significant increase, possibly due to a strengthening of some proportion of the Si-Si bonds caused by the slight elongation of bond length or because the applied tension relieves intrinsic compressive stress in a-Si:H film. A longer conduction path and greater dielectric area appears to increase the bias-stress and strain-related effects. Therefore reducing device size should increase the reliability of flexible TFTs.

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