xx, 153 p. : ill. (some col.) A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number. / In the research area of Group 13 hydroxide clusters, progress is often hampered by difficult and inefficient synthetic procedures. This has greatly limited the numerous potential applications of Group 13 hydroxide compounds, many of which require large amounts of material. Most relevant to this dissertation is their application as precursors for high quality amorphous metal oxide thin films. Addressing this issue, this dissertation presents a series of Group 13 containing hydroxide compounds of general formula [M 13 (μ 3 -OH) 6 (μ-OH) 18 (H 2 O) 24 ](NO 3 ) 15 which are generated through an efficient, scalable synthetic procedure. Throughout this dissertation, the compounds are generally referred to by their metal content, i.e. [Ga 13 (μ 3 -OH) 6 (μ-OH) 18 (H 2 O) 24 ](NO 3 ) 15 is designated as Ga 13 . Chapter I reviews the literature of inorganic and ligand-supported Group 13 hydroxide compounds with the aim of identifying common structural trends in metal composition and coordinating ligands. This summary is limited to clusters of aluminum, gallium, and indium. Chapter II describes in detail the synthesis and characterization of one such cluster, Al 13 . Following this in Chapter III is the description of the first heterometallic Group 13 hydroxide compound, Ga 7 In 6 , which along with Ga 13 was used as a precursor material for metal oxide thin films in collaboration with Professor Doug Keszler at Oregon State University. Chapter IV describes a series of six Ga/In compounds, as well as two Al/In compounds. Included in this chapter is an analysis of the heat-induced decomposition properties of the Ga/In clusters. Understanding such thermal decomposition is particularly relevant for the use of these compounds as precursor materials, as an annealing step is used to condense the films. Chapter V addresses the potential for post-synthetic modification of the compounds through metal and ligand exchange reactions, an area that also addresses the issue of solution stability of the structures Chapter VI describes the synthesis and characterization of related Group 13 compounds, including two infinite chain structures and additional heterometallic compounds. Lastly, Chapter VII concludes this dissertation and discusses potential areas of future research. This dissertation includes co-authored material and previously published results. / Committee in charge: Victoria DeRose, Chairperson, Chemistry; Darren Johnson, Member, Chemistry; James Hutchison, Member, Chemistry; Michael Haley, Member, Chemistry; Raghuveer Parthasarathy, Outside Member, Physics

No description available.

Neste trabalho, são discutidas as características de transistores de filmes finos (TFTs) nos quais nanopartículas de óxido de zinco (ZnO) são empregadas como material ativo na camada semicondutora. O crescimento contínuo do interesse por este componente está associado à busca pelo desenvolvimento da tecnologia de dispositivos eletrônicos flexíveis, transparentes e de baixo custo. TFTs integrados com nanopartículas de ZnO são apresentados, e uma extensa rotina de caracterização elétrica transiente é realizada para avaliar como estes dispositivos se comportam e degradam ao longo do tempo. Foram medidas, ao total, 80 amostras de transistores integrados em duas configurações distintas: inverted staggered e inverted coplanar. A partir das medidas analisadas foram identificados dois grupos de comportamentos elétricos dominantes, os quais foram classificados em: efeitos abruptos e efeitos de memória. A partir dos dados coletados, foram formuladas hipóteses para modelar o comportamento típico observado. Para tanto, utiliza-se dos mecanismos de atividade de traps, de interação da camada semicondutora com o meio ambiente, de polarização de dipolos e difusão de cargas móveis no dielétrico, de formação de caminhos percolados paralelos pelas nanopartículas e de difusão de vacâncias de oxigênio e íons metálicos que podem estar associados ao comportamento elétrico observado. / In this work, the characteristics of thin-film transistors (TFTs) employing nanoparticulated zinc oxide (ZnO) as the active semiconductor channel layer are discussed. The growing interest in this component is associated to the development of low-cost, flexible and transparent electronic devices. The TFTs integrated with ZnO nanoparticles are presented and an extensive transient electrical characterization campaign was performed in order to evaluate how these devices behave and degrade over time. The measurement was performed for 80 samples of two different integration setups: inverted staggered and inverted coplanar. In the performed tests two main disturbances were identified, which were classified as abrupt and memory effects. From the collected data, hypothesis to model the observed typical behavior are formulated. Trapping activity, ambient interaction, dielectric dipoles, mobile charges, formed parallel-paths, oxygen vacancies and metallic ions diffusion are mechanisms that may be associated to the observed behavior.

Dans cette thèse, j'ai étudié la relation entre la symétrie cristalline, la symétrie des interactions magnétiques et des soliton topologiques dans des couches minces magnétiques épitaxiées. Le cas particulier de couches avec une symétrie C2v a été considéré. Ces couches ont un intérêt particulier par leurs propriétés anisotropes qui permettent une stabilisation de solitons magnétiques avec différentes symétries et nombres topologiques. J'ai utilisé des approches théoriques et expérimentaux pour étudier ce phénomène :Approche micromagnétique :La relation entre les formulations atomistes et micromagnétiques des interactions magnétiques a été étudiée en fonction de la symétrie cristalline. Ceci a permis d'expliquer la présence des interactions anisotropes et d'étudier leur effet sur la configuration des solitons magnétiques 1D et 2D.La discussion commence par le plus simple soliton 1D, la paroi des domaines, et pas par pas des nouvelles interactions et symétries sont ajoutées afin de caractériser les conditions de stabilité et les propriétés des solitons 2D, les skyrmion et anti-skyrmions.Notre méthode a permis d'étudier les solitons topologiques 2D sur une large gamme de paramètres, et de construire un diagramme de phase en fonction de l'interaction Dzyaloshinskii-Moriya (DMI) et du champ magnétique appliqué. Trois types de solitons topologiques 2D ont été identifiées (skyrmions, bulles skyrmioniques et skyrmions supercritiques) en fonction de leur taille et leur réponse à un champ magnétique externe.On a aussi montré qu'une inversion du signe de la DMI selon deux directions perpendiculaires permet la stabilisation d'anti-skyrmions. Un modèle micromagnétique a été développé pour étudier la différence de configuration et d'énergie entre skyrmions et anti-skyrmions. On montre que l'interaction dipolaire rompt la symétrie circulaire de l'anti-skyrmion et le rend plus stable que le skyrmion.Approche expérimentale :J'ai préparé différentes couches magnétiques épitaxiées de symétrie C2v. Pour chaque système, je décris les paramètres de croissance et la symétrie cristalline, suivi par les résultats des caractérisations magnétiques et finalement les résultats de microscopie magnétique.J'ai étudié la symétrie et l'intensité de la DMI dans une tricouche Au/Co/W à aimantation perpendiculaire. La DMI dans ce système induit une chiralité horaire de la modulation de spin avec une forte anisotropie de l'intensité de la DMI, venant de la symétrie C2v. Des skyrmions dans ce système devraient avoir une forme elliptique. Nous avons stabilisé des skyrmions dans des films continus et dans des nanostructures. Leur configuration magnétique a été étudiée par XMCD-PEEM et MFM, mais sans observer des propriétés anisotropes.Pour augmenter l'effet des interactions anisotropes sur la configuration des skyrmions, j'ai développé le système W/Co/Au-Pt(solution solide). Des études par microscopie ont montré la stabilisation des bandes magnétiques parallèles à l'axe facile dans le plan dans ce système. Des études par microscopie Kerr ont montré que l'origine de cette configuration en bandes parallèles est une forte anisotropie de la dynamique du mouvement des parois.Des mesures MFM en champ magnétique statique ont été effectuées afin de confiner des bulles skyrmioniques elliptiques, mais la sensibilité de ces mesures à des couches ultrafines a été insuffisante pour caractériser leurs propriétés anisotropes.Des mesures XMCD-PEEM ont permis d'observer la structure interne de parois selon l'axe planaire difficile du système. Ces mesures mettent en évidence un composant Néel de la paroi.Finalement, j'ai préparé et étudié un système W/Fe/Co/Au avec le but de stabiliser des anti-skyrmions. Cependant, le système n'a pas montré l'aimantation hors-du-plan qui est nécessaire pour stabiliser ces solitons. Ce signifie que l'anisotropie planaire de l'interface W/Fe domine l'anisotropie perpendiculaire de l'interface Co/Au. / In this thesis I studied the relationship between the crystal symmetry, the symmetry of the magnetic interactions and topological solitons in epitaxial magnetic thin films. The case of thin films with C2v symmetry has been considered. These systems are particularly interesting for the anisotropic properties that allow stabilising magnetic solitons with different symmetries and topology. I used theoretical and experimental approaches to investigate this phenomenon:Micromagnetic approach:The relationship between the atomistic and the micromagnetic formulations of magnetic interactions was studied as a function of the crystal symmetry.This allowed to explain the presence of anisotropicinteractions and study their effect on the configurations of 1D and 2D magnetic solitons. The discussion starts from the simplest 1D soliton, the domain wall, and step-by-step new interactions and symmetries are added in order to characterize the stability conditions and the properties of 2D solitons, skyrmions and anti-skyrmions. Our method allowed to study 2D topological solitons over a wide range of parameters and build a phase diagram as a function of the Dzyaloshinskii-Moriya interaction (DMI) strength and magnetic field intensity. This allowed us to distinguish three kinds of 2D topological solitons (skyrmions, skyrmionic bubbles and supercritical skyrmions) as a function of their size and response to an external magnetic field. We show that an inversion of DMI strength along perpendicular directions allows the stabilisation of anti-skyrmions. A micromagnetic model is developed to study the configuration and energy differences between skyrmions and anti-skyrmions. This shows that the dipolar interaction breaks the circular symmetry of the antiskyrmion and makes it more stable than the skyrmion.Experimental approach:Epitaxial magnetic systems with C2v symmetry have been grown. For each system I describe the growth parameters and crystal symmetry, followed by the results of the magnetic characterisation and finally the results from the magnetic microscopy measurements.I have investigated the DMI symmetry and strength in an out-of-plane magnetised epitaxial Au/Co/W trilayer. The DMI in this system promotes a clockwise chirality of the spin modulation with a strong anisotropy in the DMI strength. This anisotropy arises from the C2v symmetry of the Co/W stack.Skyrmions in this system should have an elliptical shape. We stabilised skyrmions in continuous films and in nanopatterned structures. Their magnetic configurations have been displayed with different microscopic techniques, XMCD-PEEM and MFM, without identifying anisotropic properties.We designed the W/Co/Au-Pt (solid solution) system to increase the effect of the anisotropic interactions on the skyrmion configuration. Microscopy studies in naturally demagnetised areas show that stripe domains parallel to the in-plane easy axis are stable in this system. The configuration with a larger periodicity has been found even for thinner Co layer after demagnetisation with a magnetic field. Kerr microscopy studies of the DW dynamics allowed to evidence the origin of this magnetic configuration, which arises from a strong anisotropy in the DW motion.MFM measurements with the application of a static magnetic field have been performed in order to confine elliptical skyrmionic bubbles but the reduced sensitivity of this technique to thin magnetic systems did not allow to display and characterise them. XMCD-PEEM measurements allowed to display the internal structure of the DWs along the in-plane hard axis of the system. They show the presence of a Néel DW component. Finally I have grown and studied a W/Fe/Co/Au system where anti-skyrmions may in principle be stabilised. However, the system did not show the out-of-plane magnetisation which is fundamental for the stabilisation of skyrmions. This means that the W/Fe in-plane anisotropy dominates the Co/Au out-of-plane anisotropy.

abstract: Energy harvesting from ambient is important to configuring Wireless Sensor Networks (WSN) for environmental data collecting. In this work, highly flexible thermoelectric generators (TEGs) have been studied and fabricated to supply power to the wireless sensor notes used for data collecting in hot spring environment. The fabricated flexible TEGs can be easily deployed on the uneven surface of heated rocks at the rim of hot springs. By employing the temperature gradient between the hot rock surface and the air, these TEGs can generate power to extend the battery lifetime of the sensor notes and therefore reduce multiple batteries changes where the environment is usually harsh in hot springs. Also, they show great promise for self-powered wireless sensor notes. Traditional thermoelectric material bismuth telluride (Bi2Te3) and advanced MEMS (Microelectromechanical systems) thin film techniques were used for the fabrication. Test results show that when a flexible TEG array with an area of 3.4cm2 was placed on the hot plate surface of 80°C in the air under room temperature, it had an open circuit voltage output of 17.6mV and a short circuit current output of 0.53mA. The generated power was approximately 7mW/m2. On the other hand, high pressure, temperatures that can reach boiling, and the pH of different hot springs ranging from <2 to >9 make hot spring ecosystem a unique environment that is difficult to study. WSN allows many scientific studies in harsh environments that are not feasible with traditional instrumentation. However, wireless pH sensing for long time in situ data collection is still challenging for two reasons. First, the existing commercial-off-the-shelf pH meters are frequent calibration dependent; second, biofouling causes significant measurement error and drift. In this work, 2-dimentional graphene pH sensors were studied and calibration free graphene pH sensor prototypes were fabricated. Test result shows the resistance of the fabricated device changes linearly with the pH values (in the range of 3-11) in the surrounding liquid environment. Field tests show graphene layer greatly prevented the microbial fouling. Therefore, graphene pH sensors are promising candidates that can be effectively used for wireless pH sensing in exploration of hot spring ecosystems. / Dissertation/Thesis / Doctoral Dissertation Exploration Systems Design 2018

O desenvolvimento de novos materiais que possam ser aplicados como sensores resistivos de gás torna-se mais importante a cada dia devido sua importância no monitoramento ambiental, controle de emissão industrial e aplicações médicas. Desta forma, esforços têm sido realizados a fim de desenvolver dispositivos funcionais que apresentem uma alta sensibilidade, seletividade e baixo consumo de energia operando em temperaturas próximas a temperatura ambiente. O composto ZnO nanoestruturado puro e/ou dopado exibindo diferentes morfologias têm sido apontado como um candidato promissor na detecção de diferentes tipos de gases devido suas propriedades eletrônicas e da alta razão superfície/volume que facilitam a adsorção de espécies gasosas sobre sua superfície. Adicionalmente, diferentes estudos tem mostrado que o desempenho de sensores resistivos pode ser melhorado através da inserção de dopantes na rede ou na superfície do material sensor. Motivados por essas considerações, neste trabalho, filmes finos e espessos de composição ZnO e Zn1-xCoxO nanoestruturados obtidos através dos métodos dos precursores poliméricos, RF sputtering e tratamento hidrotermal foram avaliados visando sua aplicação como sensor dos gases O3, NO2 e CO. O estudo das propriedades estruturais de longo alcance investigadas através da técnica de difração de raios X mostrou que a adição de cobalto causa uma diminuição da intensidade dos picos de difração. Medidas do espectro de absorção de raios-X indicaram que nas amostras obtidas pelo método dos precursores poliméricos e RF sputtering, respectivamente, os átomos de Co assumem predominantemente o estado de valência 2+ e 3 +. A composição química da superfície das amostras foi analisada através da técnica de espectroscopia de fotoelétrons de raios X (XPS) enquanto as propriedades microestruturais foram avaliadas por microscopia eletrônica de varredura (MEV) e microscopia de força atômica (AFM). Medidas da resistência elétrica das amostras foram utilizadas para avaliar as propriedades sensoras das amostras, como a sensibilidade, a seletividade, o tempo de resposta e de recuperação quando expostos a diferentes concentrações dos gases O3, CO e NO2. As medidas de resistência elétrica quando os filmes foram expostos as estes gases mostrou que as três metodologias de síntese foram eficientes na obtenção de amostras que apresentam um grande potencial para serem aplicadas como sensores de gás. Entretanto, a amostra obtida por RF-sputtering apresentou as melhores propriedades de detecção ao gás ozônio com, valor de resposta quarenta (40) vezes maior, que foi atribuído a sua alta rugosidade e as características microestruturais apresentadas por essa amostra. As amostras Zn1-xCoxO obtidas pelo método dos precursores poliméricos exibiram uma maior sensibilidade ao ozônio e uma menor temperatura de trabalho em relação a amostra ZnO, preparada por esse mesmo método. Além disso, a adição de cobalto contribuiu para a seletividade do composto. A melhora das propriedades sensoras foram atribuídas a uma melhor atividade catalítica causada pelos íons Co e a presença de defeitos na superfie do material, que favoreceu a adsorção das moléculas de oxigênio na superfície da amostra / The development of new materials to be applied as gas resistive sensors has become increasingly important regarding environmental monitoring, industrial emission control and medical applications. Pure or doped ZnO nanostructured compounds that exhibit different morphologies have been identified as promising candidates for the detection of different types of toxic gases due to their electronic properties and high surface/volume ratio, which facilitates the adsorption of gaseous species on their surface. Studies have shown the performance of resistive sensors can be improved by the doping or presence of defects in the network or at the surface of the sensor material. The present doctoral thesis addresses the evaluation of ZnO and Zn1-xCoxO nanostructured films obtained by the polymeric precursor method, RF sputtering deposition and hydrothermal treatment and their application as O3, NO2 and CO gas sensors. Their long-range order structure investigated by the X-ray diffraction technique showed the addition of cobalt decreases the intensity of diffraction peaks. Measurements of X-ray absorption spectra at Co K-edge indicated Co atoms in the samples obtained by the RF sputtering technique and polymeric precursor method predominantly assume the 2+ and 3+ oxidation state. Measurements of electrical resistance were used in the evaluation of ZnO and Zn1-xCoxO nanostructured films sensing properties such as sensitivity, selectivity, response and recovery times under different concentrations of O3, CO and NO2 gases. The electrical resistance of the films exposed to those gases showed the three methodologies of synthesis effectively obtained samples to be applied as gas sensors. However, the sample obtained by the RF-sputtering deposition technique exhibited the best detection properties towards ozone gas and a forty-time higher response value, attributed to greater roughness and microstructural features. Zn1-xCoxO samples obtained by the polymeric precursor method exhibited higher sensitivity and a lower working temperature in relation to ozone gas. Such characteristics were attributed to a better catalytic activity promoted by the addition of Co ions and the presence of defects on the surface of the material, which favors the adsorption of oxygen molecules on the sample surface.

Thin film transistors (TFTs) can be used to determine the bulk-like mobilities of amorphous semiconductors. Different organic hole transporters (HTs) are under investigation including spiro-TPD, 2TNATA, NPB and TPD which are commonly used in organic light-emitting diodes (OLEDs). In addition, we also measure the TFT hole mobilities of two iridium phosphors: Ir(ppy)3 and Ir(piq)3. These materials were grown on two different gate dielectric surfaces which were SiO2 and polystyrene (PS). On SiO2, the TFT mobilities are found to be 1-2 orders smaller than the bulk hole mobilities as evaluated independently by time-of-flight (TOF) technique. On the other hand, on PS gate dielectric layer, the TFT mobilities of these hole transporters are found to be in good agreement with TOF data. A thickness dependence measurement was carried out on TFT with PS. We found that only 10nm of organic semiconductor is sufficient for TFTs to achieve TOF mobilities. We further investigate why organic semiconductors on SiO2 have such huge reduction of mobilities. Temperature dependent mobility measurements were carried out and the data were analyzed by the Gaussian Disorder Model (GDM). We found that on SiO2 surface, when compared to the bulk values, the energetic disorders (σ) of the HTs increase and simultaneously, the high temperature limits (∞) of the carrier mobilities decrease. Both σ and ∞ contribute to the reduction of the carrier mobility. The increase in σ is related to the presence of randomly oriented polar Si-O bonds. The reduction of ∞ is topological in origin and is related to the orientations of the more planar molecules on SiO2. The more planar molecules tend to lie horizontally on the surface and such orientation is unfavorable for charge transport in TFT configuration. Hybrid organic/inorganic perovskites have emerged as an outstanding material for photovoltaic cells. In the second part of this work, we setup a repeatable perovskite recipe and optimized the system under different conditions. Under certain circumstances, a perovskite solar cell with power conversion efficiency ~9% can be achieved with PEDOT:PSS as hole transporting layer with the conventional structure.

Le développement de couches minces dopées terres rares a suscité un regain d'intérêt au cours des dernières années. Dans ce mémoire nous présentons l'élaboration des couches minces d'yttria (Y2O3), d'alumine (Al2O3) et les couches mixtes Y2O3-Al2O3 dopées erbium. La technique utilisée est le procédé de dépôt chimique en phase vapeur à partir de précurseurs organométallique (MOCVD) assisté par aérosol. Un dispositif d'irradiation UV est appliqué afin d'assister le processus de réaction avec une modification de l'hygrométrie de l'air vecteur. Les meilleures propriétés sont obtenues pour les couches déposées sous une forte humidité de l'air vecteur et avec l'assistance UV. Dans ces conditions les couches d'yttria présentent une faible vitesse de croissance, une faible contamination organique et une bonne cristallinité dans la phase cubique de l'yttria. Plusieurs phénomènes d'Up-conversion ont été mis en évidence dans les spectres de fluorescence visible de l'erbium dans l'yttria. Une durée de vie du niveau 4I13/2 de l'erbium de 3.07 ms a été mesurée pour ce matériau après recuit à 800°C. Cette valeur est supérieure à celle obtenue pour l'échantillon déposé sous une faible humidité de l'air et sans l'assistance UV après recuit à 1000°C. Les couches d'alumine déposées dans les conditions optimales présentent des vitesses de croissance élevées et se caractérisent par une grande stabilité thermique, permettant l'élimination complète des impuretés tout en restant amorphe. Enfin, l'étude du système Y2O3-Al2O3 montre que les conditions de dépôt jouent un rôle important sur la composition et les propriétés physico-chimiques des dépôts. / The development of rare earth-doped thin film has gained interest over these last few years. In this report we present the elaboration of erbium-doped yttria (Y2O3), alumina (Al2O3) and yttria-alumina (Y2O3-Al2O3) films. The technique used is aerosol assisted chemical vapor deposition processes with metalorganic precursors (MOCVD). A UV-irradiation device is applied to assist the reaction process with a modification in the air humidity of the carrier gas. The best properties are obtained on thin films grown under high air humidity and with UV-assistance. Under such deposition conditions the yttria films present a low growth rate, low organic contamination and higher crystallisation degree in the yttria cubic structure. Several up-conversion phenomena are point out in the visible fluorescence spectra of the erbium ion in yttria. A lifetime of the 4I13/2 Er3+ level of 3.07 ms was found in this material after annealing at 800°C. This value is higher than that obtained for the sample deposited under low air humidity and without UV assistance after annealing at 1000°C. Alumina film deposited under optimal conditions show high growth rate and was a high thermal stability; allow the complete elimination of impurities while remaining amorphous. At last, the results of system Y2O3-Al2O3 indicates that deposition conditions play an important role on the composition and physicochemical properties of films.

Depuis plus d'un demi-siècle, le monde de la microélectronique est rythmé par une course à la miniaturisation de son élément central, le transistor MOS, dans le but d'améliorer la densité d'intégration, les performances et le coût des circuits électroniques intégrés. Depuis plusieurs générations technologiques maintenant, la simple réduction des dimensions du transistor n'est plus suffisante et de nouveaux modules technologiques (utilisation de la contrainte, empilement de grille high-k/métal…) ont du être mis en place. Cependant, le transistor MOS conventionnel, même optimisé, ne suffira bientôt plus à répondre aux attentes toujours plus élevées des nouvelles technologies. De nouvelles architectures doivent alors être envisagées pour épauler puis, à terme, remplacer la technologie BULK. Dans ce contexte, cette thèse porte sur l'étude, la fabrication et la caractérisation électrique des architectures à film mince que sont le SOI localisé (ou LSOI) et le double grille planaire à grille enrobante (ou GAA). Les résultats obtenus mettent ainsi en évidence l'intérêt de ces dispositifs qui permettent une réduction du courant de fuite (et donc de la consommation), un excellent contrôle des effets électrostatiques et fonctionnent sans dopage canal (faible variabilité) tout en proposant de très bonnes performances statiques. L'impact d'une orientation de substrat (110) sur les propriétés de transport dans les transistors LSOI est également étudié. Ce travail de thèse garde comme ligne de mire la réalisation d'une plateforme basse consommation complète, impliquant une éventuelle intégration hybride avec des dispositifs BULK et la possibilité d'offrir plusieurs niveaux de tension de seuil, le tout sur une même puce. / For more than 50 years, microelectronic industry is driven by a race to the miniaturisation of its central element, the MOS transistor, to improve the integration density, the performances and the cost of the electronic integrated circuits. Since the adoption of 100nm node, the only reduction of the dimensions of the transistor is no more sufficient and new technological modules (use of strain, high-k/metal gatestack…) have been introduced. However, conventional MOSFET, even opimized, will soon be unable to reach the specifications, always higher, of new technologies. Then, new structures should be considered to help and, finally, to replace the BULK technology. In this context, the work concerns the study, the fabrication and the electrical characterization of the thin film devices : Localized-SOI (LSOI) and planar gate-all-around (GAA). The obtained resultats point out the interest of such devices which allow the reduction of the leakage current (and thus the consumption), an excellent control of electrostatics and are able to work with an undoped channel while offering very good static performances. Impact of (110) substrates on transport properties in LSOI transistors is also studied. This work focuses on the integration of a full low-power platform, what induces the possibility of an hybrid integration with BULK devices and to offer several threshold voltages, everything on the same chip.

Ces travaux de thèse ont pour but de développer des cellules photovoltaïques à base de Cu(In,Ga)Se2 (CIGS) sur des substrats métalliques. L'objectif principal consiste à résoudre les différentes problématiques liées à l'utilisation de ces substrats (Ti et acier inoxydable) en s'appuyant sur une adaptation de l'électrode arrière. L'étude est focalisée sur l'élaboration de contacts arrière en Mo par pulvérisation cathodique. Dans un premier temps, des contacts arrières en monocouches et en bicouches sont comparés, démontrant les intérêts des structures en bicouches. Ces dernières sont obtenues en utilisant successivement deux pressions différentes pendant le dépôt du contact arrière. Nous montrons que la pression utilisée pendant le dépôt de la couche inférieure influe sur la morphologie de la couche supérieure. Il en résulte des modifications de l'orientation cristalline du CIGS et des performances photovoltaïques. Dans une seconde étude, la couche inférieure est déposée à partir d'une cible de molybdène contenant du sodium (Mo:Na) afin d'apporter du Na dans le CIGS. Les différences entre le Mo et le Mo:Na sont d'abord étudiées. Nous montrons ensuite que la diffusion du sodium vers le CIGS dépend de la pression de dépôt de la couche de Mo:Na. Dans le cas de substrats en Ti, des rendements équivalents aux substrats en verre sodo-calcique sont obtenus en utilisant le molybdène dopé au sodium. Nous montrons aussi qu'en présence de sodium, l'effet de la pression de dépôt de la couche inférieure sur les performances est minimisé. / This PhD work is focused on the development of Cu(In,Ga)Se2 (CIGS) solar cells on metallic substrates. The main goal is to fix various issues related to the replacement of the standard soda-lime glass substrates by metallic substrates (Ti and stainless steel foils), through optimizing and functionalizing of the back contact. Thus, the study is focused on the development of DC-sputtered Mo back contacts. First, monolayer-based and bilayer-based back contacts are compared, demonstrating the interests of the bilayers. The latter are obtained by successively using two different deposition pressures during the DC-sputtering of the back contact. We show that the deposition pressure of the bottom layer of the back contact influences the morphology of the top layer. This leads to changes in the cristallographic properties of the CIGS and in the global device performance. In a second study, the bottom layer is deposited using a Na-doped Mo sputtering target (Mo:Na), in order to use the back contact as a sodium precursor for the CIGS. The differences between the sputtered Mo and Mo:Na layers are first studied. Then, we show that sodium diffusion depends on the deposition pressure of the Mo:Na layer. On Ti substrates, conversion efficiencies as high as on the glass substrates were reached using the Mo:Na layers. It is also shown that when sodium is present, the effect of the deposition pressure of the bottom layer on the device performance is reduced.