No description available.

Indium antimonide (InSb) and gallium antimonide (GaSb) are technologically important III-V semiconductor materials used in infrared detector systems. Yet, the application of these materials is to a certain extent limited, in that the techniques currently used for their growth are both expensive and problematic. Semiconductor electrochemical deposition, which has been successfully applied to the generation of II-VI semiconductor materials, may offer the prospect of overcoming such limitations. This work presents results that represent a significant contribution to the development of electrochemical methods for both InSb and GaSb thin film growth. The direct electrochemical co-deposition of InSb was achieved via the potentiostatic electrolysis of aqueous halide/citric acid electrolyte solutions, and for the first time, non-aqueous (ethylene glycol) electrolyte solutions containing the halides and tetraethylammonium chloride. This choice of solvents allowed the compound's deposition to be studied over a wide range of temperatures (RT to 185 °C). A first report was also made of the direct potentiostatic co-deposition of GaSb from an aqueous solution containing Ga[2](SO[4])[3] and SbCl[3].An extensive study was carried out on the relationship between the technique's fundamental growth parameters (temperature, deposition potential, solution composition etc.) and the film's compositional, crystallographic and morphological properties. The material's characterisation showed that there was tendency for the films to be non-stoichiometric. X-Ray diffraction patterns obtained from InSb films deposited from aqueous electrolyte solutions showed them to generally consist of two phases, the compound and, depending mostly on deposition potential, one of the elements. Films containing three phases, the compound and both elements, were deposited on Ti substrates from aqueous solutions and on to ITO substrates from non-aqueous solutions. These results were interpreted from both thermodynamic and kinetic viewpoints. This led to the conclusion that kinetic barriers to the formation of InSb still existed, even at the highest temperature used (~185 °C). In respect of GaSb, the compound's formation was complicated by a side reaction involving the evolution of H[2].New studies involving Scanning Electron Microscopy of the electrodeposited materials showed that they exhibited a nodular morphology, which can be explained in terms of the film's limiting current growth conditions. Energy Dispersive X-Ray Analysis (EDX) and Glow Discharge Optical Emission Spectroscopy (GDOES) identified indium chloride as a major impurity in the InSb films, especially those deposited from non-aqueous solutions. A mechanism for the incorporation of indium chloride was proposed, based on the physical entrapment of a precipitate of the compound.

The present research work mainly focuses on fabrication of compositionally modulated multilayers of (l−x) Pb(Mgi/3N2/3)O3 - x PbTiO3 (PMNPT) through multi target pulsed laser ablation technique. Heterostructures like compositionally varying multilayers; multilayers with graded interface and a ferroelectric [PbTiO3 (PT)] and relaxor (PMN) superlattices of different periodicities were fabricated. Role of artificially enhanced chemical heterogeneity and strain on enhancement of physical property was studied. Dimensional dependent ferroelectric and antiferroelectric type of polarization behavior was observed in the case of both compositionally varying multilayers and the superlattice structures fabricated. The dimensional dependence of various ferroelectric interactions like long-range, short-range and interfacial coupling among the layers was studied. The phase transition behavior and dielectric studies were carried out on these heterostructures. An artificial superlattice of a relaxor ferroelectric with a ferromagnetic layer was also fabricated for magnetoelectric applications. Chapter 1 provides a brief introduction to ferroelectric (FE) heterostructures, their technological applications and the fundamental physics involved in ferroelectric heterostructures. Initially an introduction to the technological importance and advantages of ferroelectric heterostructures is provided. A brief introduction to relaxor ferroelectrics and their characteristic structural features are discussed. A brief review of the ferroelectric heterostructures both from fundamental science and technological point of view is provided. Finally the specific objectives of the current research are outlined. Chapter 2 deals with the various experimental studies carried out in this research work. It gives the details of the experimental set up and the basic operation principles of various structural and physical characterizations of the materials prepared. A brief explanation of material fabrication, structural, micro structural and physical property measurements is discussed. Chapter 3 addresses the problem of phase formation of PMNPT over platinum substrates and the role of the template over the phase formation, micro structural evolution and polarization behavior. The surface modifications of bare Pt under the processing conditions used to fabricate PMNPT was also studied. An intermediate roughening mechanism was observed. The role of LSCO over the micro structural evolution of PMNPT, the minimum thickness of LSCO required for phase formation of PMNPT, role of LSCO on phase formation and its effect on the polarization behavior of PMNPT of constant thickness are discussed. Chapter 4 deals with fabrication of different types of relaxor based heterostructures studied in this work. Three different types of PMNPT based heterostructures was fabricated using a multi target laser ablation chamber. The first type of heterostructure is a compositionally modulated multilayer thin film with four different compositions of (1-x) PMN - x PT (x = 0.0, 0.1, 0.2, 0.3 at.%) and is represented as PMNPT multilayer (ML) further in this thesis. PMNPT ML with different individual layer thickness was fabricated (30, 40, 60, 80, 100 and 120 nm). The second type of heterostructure is the PMNPT ML of same dimensions, but associated with a post deposition annealing to achieve a graded interface between the multilayers present and will be named as PMNPT graded or simply graded, further in this thesis. The third type of heterostructure is an artificial superlattice of a simple relaxor ferroelectric (PMN) and a normal ferroelectric (PT), which will be named as PMN-PT superlattice (SL) further in this thesis. The crystallinity, micro structural features and the nature of the interface present in the fabricated heterostructures were studied using various experimental techniques. Chapter 5 deals with the FE studies of compositionally modulated PMNPT ML thin films and PMNPT graded thin films. The ML with individual layer thickness of 120nm exhibited a clear FE behavior but with a reduced remnant polarization and reduced non linear behavior in capacitance - voltage (C-V) characteristics. But on varying the dimensions of the individual layers (30, 40, 60, 80, 100 and 120nm) a large dielectric tunability of around 74% was observed at lOOnm. The polarization behavior of these ML exhibited an interesting size dependent polarization behavior. A FE behavior was observed at low dimensions of 40 and 30nm. An AFE type of loop was observed at 60 and 80nm of individual layer thickness and at lOOnm it showed a clear paraelectric kind of behavior both in polarization hysteresis (P-E) and C-V studies. Graded films exhibited clear FE behavior at all dimensions fabricated and hence the role of interface in developing a critical polarization behavior in the case of ML was confirmed. Apart from the fundamental physics these ML and graded films permits the tunability of their physical properties on just varying the individual layer thickness. The dimensional dependence of dielectric tunability of ML and graded films were studied and it was found that in the case of a ML the dielectric tunability was high at lOOnm individual layer thickness and at 40nm in the case of a graded film. Thus the interfacial strain, interfacial coupling and chemical heterogeneity give an opportunity to engineer the physical property depending on the requirements. Chapter 6 deals with ferroelectric studies (P-E, C-V) of PMN-PT superlattice structures with different periodicities. The dimensional range in which, the interfacial coupling dominates the overall polarization behavior of the system was analyzed. A dimensional dependent FE and AFE behavior was observed in the PMN-PT SL structures. The dimensional dependent tunability of physical properties was achieved. The different interactions like short range, long range and the interfacial coupling and their dimensional dependent behavior was studied. The dimensional dependent tunability of the P-E and C-V behavior was observed both in symmetric and asymmetric SL structures. Chapter 7 deals with the relaxor behavior of the fabricated PMNPT ML, graded and PMN-PT SL structures. The dielectric phase transition of a PMNPT ML exhibited local maxima in the real part of dielectric constant with temperature. The local maxima correspond to the temperature regime at which, the individual layer dielectric maxima dominates the phase transition behavior of the ML structure. In the case of graded films an averaged behavior of all the compositions, with an enhanced diffusivity was observed. All the characteristic features of a relaxor ferroelectric were observed in the phase transition behavior of a graded thin film. The dielectric maxima exhibited a Vogel-Fulcher type of behavior with frequency, A similar averaged behavior was observed in the phase transition behavior of PMNPT ML at low dimensions (< 40 nm) of the individual layer. The dielectric phase transition behavior of PMN-PT SL structures of different periodicities was studied. No characteristic of a relaxor ferroelectric was observed for the periodicities in the range of 10 to 50 nm. At 60 nm periodicity the individual layer dominance was observed in the phase transition behavior of the SL structure. The phase transition behavior was found to be insensitive to the interfacial coupling in both the PMNPT ML and PMN-PT SL. Chapter 8 deals with the dielectric response, impedance spectroscopy and the DC leakage characteristics of the relaxor heterostructures. All the relaxor heterostructures fabricated, exhibited low frequency dispersion, similar to that of the Jonscher's universal type of relaxation behavior. The anomalous dispersion common of a relaxor ferroelectric was observed in the imaginary dielectric constant at high frequencies. A.multi debye type of relaxation behavior was observed in the impedance analysis and the relaxation time was found to obey Vogel-Fulcher type of relation with temperature. The leakage current of all the heterostructures were found to be few orders less than the homogeneous single layer thin films. A space charge limited conduction was observed in all the heterostructures fabricated. Chapter 9 deals with an attempt of realizing the magnetoelectric effect in an artificial superlattice structure consisting ferromagnetic [Lao.6Sro.4Mn03 (LSMO)] and ferroelectric (PMNPT 70-30) layers. Both symmetric and asymmetric SL structures were fabricated and the asymmetric SL exhibited both room temperature ferromagnetic and ferroelectric behavior. A weak influence of magnetic field over the polarization behavior was observed. The magnetic behavior and its influence over electrical behavior were found to be dominated by the interface and were confirmed from the Maxwell-Wagner type of relaxation. Chapter 10 gives the summary and conclusions of the present study and also discusses about the future work that could give more insight into the understanding of the relaxor heterostructures.

Fabrication of artificially structured superlattices, when controlled on a nanoscale level, can exhibit enhanced dielectric properties over a wide temperature range. Possible fabrication of new functional devices based on the parametric values of dielectric constants of these heterostructures was the major motivation behind the work. Chapter 1 gives a brief overview of ferroelectrics; their defining features and their commercial importance to electronic industry. An introduction to ferroelectric superlattices, their technological application and fundamental physics that influence the behavior of superlattices are provided. Chapter 2 deals with the various experimental studies carried out in this research work. It gives the details of the experimental set up and the basic operation principles of various structural and physical characterizations of the materials prepared. A brief explanation of material fabrication, structural, micro structural and physical property measurements is discussed. Chapter 3 involves fabrication of two-component ferroelectric superlattices consisting of Barium Titanate (BTO), and Strontium Titanate (STO) with nanoscale control of superlattice periodicities by high-pressure multi target pulsed laser deposition on Pt (111)/Ti/SiO2/Si (100) substrate. Superlattices with varying periodicities were fabricated and their compositional variation across the thin film and the interface width were studied using Secondary Ion Mass Spectrometry (SIMS). Fabrications of superlattice structure were supported by observation of satellite peaks in XRD corresponding to the coherent heterostructures. The microstructural analysis was carried out using cross-sectional scanning electron microscopy (SEM), and contact mode-AFM was used to image surface morphology and root-mean-square (rms) roughness of the thin film heterostructure. Chapter 4 deals with ferroelectric studies of BTO/STO superlattices. The size dependent polarization behaviors of the superlattices are shown. The experimental realization of the dimensional range in which, the long-range coupling interaction dominates the overall polarization behavior of the system was studied. The dependence of average spontaneous polarization on the individual layer thickness, temperature and the dimensional range of interaction are discussed. The enhanced non-linear behaviors of the films were measured in terms of tunability. The dielectric phase transition behavior of superlattice structures of different periodicities was studied. Chapter 5 focuses on fabrication of three-component ferroelectric superlattices consisting of Barium Titanate (BTO), Calcium Titanate (CTO) and Strontium Titanate (STO). The fabrications of superlattice structures were confirmed by the presence of satellite reflections in XRD analysis and a periodic concentration of Sr, Ba and Ca throughout the film in Depth profile of SIMS analysis. The microstructural analysis was carried out using cross-sectional scanning electron microscopy (SEM), and contact mode-AFM was used to image surface morphology and root-mean-square (rms) roughness of the thin film heterostructure. The dielectric characteristic and polarization properties of the system are discussed. Large variations of lattice distortion in the consisting layers were achieved by varying the stacking sequence and superlattice periodicity. The influence of interfacial strain on enhancement of ferroelectric polarization was studied. The size dependence and the role of interfaces in the observed enhancements of the dielectric behaviors were highlighted. The tunability of about 55% was achieved in these systems and was higher than any of the single polycrystalline thin film of the constituent materials reported till date. The enhanced dielectric properties were thus discussed in terms of the interfacial strain driven polar region due to high lattice mismatch and electrostatic coupling due to polarization mismatch between individual layers. Chapter 6 deals with the dielectric response, impedance spectroscopy and the DC leakage characteristics of the superlattice structures. All the heterostructures fabricated, exhibited low frequency dispersion, similar to that of the Jonscher’s universal type of relaxation behavior. The anomalous dispersion was observed in the imaginary dielectric constant at high frequencies. A Debye type relaxation behavior was observed in the impedance analysis at low temperatures, whereas, a departure from ideal ‘Debye’ type was noticed as the temperature was increased. The leakage currents of all the heterostructures were found to be a few orders less than the homogeneous single layer thin films. A space charge limited conduction was observed in al the superlattice structures fabricated. Chapter 7 summarizes the present study and discusses about the future work that could give more insight into the understanding of the ferroelectric perovskite heterostructures.

In the recent years area organic photovoltaics is generating a lot of interests because whole process of synthesis and fabrication is less energy intensive process as well as it is cost effective compared to conventional inorganic Si based photovoltaic technology. This work mainly deals with the fabrication and optimization of device fabrication conditions for organic photovoltaic materials. In first part of the work, the solar cell fabrication conditions were optimized for the commonly used system P3HT – PCBM. The fabricated device was optimized for the solvents used for the active material, concentration of the active material solution, donor- acceptor ratio of the active material, annealing conditions of the active layer and the metal evaporation conditions for the cathode. All the optimization procedures were carried out in controlled atmosphere to minimize the environmental effect inference during fabrication of the solar cell devices. All the characterization was carried out at ambient conditions. The efficiency of the solar cell was improved from 0.009% to 6.2%. the environmental stability of the fabricated devices were carried out after encapsulating it with epoxy based resin in both ambient conditions as well as extreme conditions like 85% RH at 25°C inside the humidity chamber. It was observed that both the data matches well with each other indicating proper encapsulation required to safe guard the device for the better performance over the period of time. Second part of this work mainly deals with understanding the structure property relationship of thiophene based donor- acceptor- donor molecule 2,5-dithienyl-3,4-(1,8-naphthylene) cyclopentadienone (DTCPA), which is highly crystalline, low band gap organic molecule which absorbs over entire visible region of the solar spectra. DTCPA crystals of various morphologies were prepared by various recrystallization routes. It was observed that macro scale morphology of these crystals differs from each other. Also depending on the method of recrystallization sizes of the crystals also varies. All the recrystallized DTCPA shows strong orientation toward (001) direction. However, it was observed that lattice parameters of these crystals slightly differ from each other owing to the recrystallization methodology. These variations in crystal parameters are more than 0.02 which is significant. It was also observed that the crystallite sizes depend on the recrystallization routes. Slow evaporation of concentrated solution (SEC) grown crystals has the larger crystallite size of 170nm. It was observed that absorption range of these crystals slightly differ from each other owing to the change in the crystallite sizes and crystal parameters. Third part of this work deals with the fabrication and optimization of thermal evaporation process of DTCPA for photovoltaic applications. DTCPA is stable at higher temperatures as well as has sharp melting point which make it ideal candidate for thermal evaporation. In this work films of DTCPA were fabricated for various evaporation rates by thermal evaporation technique. Chemical integrity of the molecules upon evaporation is found to be intact as observed from FTIR spectroscopy. XRD shows that at lower (25 W/m2) as well as higher (40 W/m2) films are oriented to (001), (400) as well as (311) directions, at 30 W/m2 and 35 W/m2 there is a strong orientation towards (311) and (001) directions respectively. Photo luminescence studies indicate that there is strong 410 nm emission for films deposited at the power of 25 W/m2 and 40 W/m2. Microscopic studies confirm that morphology is dependent on the deposition rates as it changes with the change in deposition rate. This in turn reflects in the device characteristics of these films. It was observed that films deposited at high deposition rates show better device characteristics with high VOC and current density values. All these device fabrication and characterizations were carried out in ambient conditions. Fourth part of this work deals with P3HT - DTCPA composites which exhibit wide range of light absorption. It was observed that DTCPA act as nucleating centers for the P3HT molecules and increases crystallinity in the composite. Furthermore, DTCPA helps in exciton separation because of donor and acceptor moieties present in the molecule. It also helps in charge transportation because of its crystalline nature and further it induces molecular ordering in the P3HT matrix. The band diagram of P3HT- DTCPA suggests that the band edges of both materials are ideal for charge separation. In addition, crystalline nature of the DTCPA molecule helps in effective charge transportation. J-V characteristics shows that there is large built in potential in the devices from these blends leading to large Voc. Composites with lower DTCPA loadings show higher efficiency than with higher loadings. These devices were prepared in ambient conditions and needs to be optimized for obtaining better device properties. In the fifth part of the work two types of system were studied to understand the band edge matching on the photovoltaic properties, carbazole based copolymers and DTCPA based copolymers. In the case of carbazole based copolymers it was observed that by copolymerizing carbazole with thiophene based derivatives lowers the band gap and modifies the HOMO and LUMO levels for better suit for the photovoltaic device fabrication. It was observed that that is two orders of improvements in the efficiency by co polymerizing carbazole with benzothiodizole as improves the JSC and VOC. Also the copolymerization of carbazole with both benzothiodiazole and bithiophene results in better light harvesting as the optical band gap was lowered. In the case of DTCPA copolymers with DTBT and DHTBT as both are random copolymers the solubility was low as well as their HOMO band edge was mismatched with the PEDOT: PSS which is a hole transport layer. However, the alternate polymerization of DTCPA with DTBT improved the band edge matching and also the solubility. As a result there was tenfold improvement in the charge collection and hence the efficiency was improved from 0.02% to 2.4%. Many of the conducting polymers have good material property but poor filmability. In the sixth part of this work deals with fabrication of device quality films by alternate deposition technique like pulsed laser deposition. Two types of system were studied in this work (i) polypyrrole- MWCNT nanocomposites and (ii) Poly DTCPA polymer. In both the cases it was observed that chemical integrity of the polymer retained during ablation. PolyDTCPA films were fabricated by pulsed laser deposition by both IR (Nd-YAG) and UV (KrF) laser source. Morphological studies indicate that IR laser ablated films were particulate in nature whereas UV laser ablated films were grown as continuous layers as polyDTCPA absorbs better in UV region. As a result the IV characteristics indicate that IR laser ablated films are resistive in nature and UV laser ablated films are good rectifiers indicating the suitability of the process for fabrication of device quality films.

No description available.

The present research work mainly focuses on the fabrication and characterization of single and multilayer thin films based on Bismuth Vanadate (BVO) and Bismuth Titanate (BTO). The multi-target laser ablation technique was used to fabricate single layer thin films of BVO, BVN and BTO; and multilayers composed of BVO and BTO in different structures. The fabricated thin films exhibited dense microstructure and a sharp interface with the substrate. The lattice strain, surface roughness and grain size could be varied as functions of composition and individual layer thickness in different structure fabricated. The optical properties were studied by spectroscopic ellipsometry and optical transmission spectra. The various models that were used for ellipsometric data analysis gave an excellent fitting to the experimental data. The optical constants were determined through multilayer analyses of the films. The band gap of these films was studied by spectroscopic ellipsometry and optical transmission. The optical studies carried out on BVO-BTO bilayer indicated the presence of an interfacial layer in between the BVO and BTO layer, whose refractive index was different from that of the individual layers and is attributed to different nature of the interfacial layer. The ferroelectric nature of BVO films was confirmed by P-E hysteresis loop studies under different applied fields and at various probing frequencies. The same was corroborated via the C-V measurements of these BVO films which exhibited butterfly shaped C-V characteristics. Fatigue studies in these films indicated that the switchable polarization is essentially constant through 105 cycles, after which it starts increasing probably due to the ionic conduction in BVO thin films. The dielectric response of undoped and Nb doped BVO as well as BVBT ML thin films were studied over a wide range of temperatures. The BVO films exhibited remarkable dielectric dispersion at low frequencies especially in the high temperature regime. Further, the frequency and temperature dependence of the dielectric, impedance, modulus and conductivity spectra of these films were investigated in detail. The ac conductivity was found to obey well the double power law in case of ML, indicating the different contributions to the conductivity, the low frequency conductivity being due to the short range translational hopping and the high frequency conductivity is due to the localized or reorientational hopping motion. DC leakage conduction in BVO, BVN and BVBT ML thin films was studied over a wide range of temperatures and applied electric fields. The experimental data were analyzed in light of different models to investigate the dc conduction mechanism in these films which were broadly classified into electrode limited and bulk limited conduction processes. In the case of BVO thin films the dc leakage current exhibited an ohmic nature at low electric fields followed by an onset of the space charge limited conduction (>1). Further in case of BVN films, three distinct regions were observed in I-V characteristics signifying different types of conduction processes in these films. In case of BVBT ML thin films, bulk limited PF mechanism was found to determine the conduction behavior at moderate electric fields. At higher electric fields, a trap filled region was observed which was followed by SCL conduction at higher fields. Therefore the present observation indicates the presence of more than one bulk limited conduction process in BVBT ML thin films. BVO thin films exhibiting good structure and dense morphology were successfully prepared on p-type Si by chemical solution decomposition technique. The C-V characteristics were evaluated for Au/BVO/Si MFS structure which showed a typical high frequency feature of a conventional MFIS structure.