abstract: This dissertation provides a fundamental understanding of the impact of bulk polymer properties on the nanometer length scale modulus. The elastic modulus of amorphous organic thin films is examined using a surface wrinkling technique. Potential correlations between thin film behavior and intrinsic properties such as flexibility and chain length are explored. Thermal properties, glass transition temperature (Tg) and the coefficient of thermal expansion, are examined along with the moduli of these thin films. It is found that the nanometer length scale behavior of flexible polymers correlates to its bulk Tg and not the polymers intrinsic size. It is also found that decreases in the modulus of ultrathin flexible films is not correlated with the observed Tg decrease in films of the same thickness. Techniques to circumvent reductions from bulk modulus were also demonstrated. However, as chain flexibility is reduced the modulus becomes thickness independent down to 10 nm. Similarly for this series minor reductions in Tg were obtained. To further understand the impact of the intrinsic size and processing conditions; this wrinkling instability was also utilized to determine the modulus of small organic electronic materials at various deposition conditions. Lastly, this wrinkling instability is exploited for development of poly furfuryl alcohol wrinkles. A two-step wrinkling process is developed via an acid catalyzed polymerization of a drop cast solution of furfuryl alcohol and photo acid generator. The ability to control the surface topology and tune the wrinkle wavelength with processing parameters such as substrate temperature and photo acid generator concentration is also demonstrated. Well-ordered linear, circular, and curvilinear patterns are also obtained by selective ultraviolet exposure and polymerization of the furfuryl alcohol film. As a carbon precursor a thorough understanding of this wrinkling instability can have applications in a wide variety of technologies. / Dissertation/Thesis / Ph.D. Chemical Engineering 2011

The objective of the current work has been to develop a system which will allow continuous monitoring of areal mass density, lateral stress, and temperature during a process with real time presentation of results making possible either manual or automated control of the process. The system uses three quartz resonators of different crystallographic cuts (AT cut, BT cut and SC cut) in the same environment. The development of an algorithm to solve a system of equations representing a complete representation of the temperature characteristics of the three resonators is presented. This is followed by an analysis of the potential accuracy of the system and the limitations imposed by the assumptions made in the mathematical models of the system. Sputtering yields were verified using Rutherford backscattering analysis. Experimental apparatus including the physical mounting of the resonators in an experimental environment, details of the oscillator circuitry and frequency counter, and use of a personal computer for data acquisition and control are described. The results presented show, in addition to the mass change and lateral stress build-up which occur when sputtering a gold film with an argon ion beam, the radiation induced temperature rise and the radiation induced stress caused by temperature gradients. An experiment using beams of Sb+ at 50keV and Sb2+ at 100keV has been used to demonstrate the enhancement of sputtering yield that occurs when Au films are bombarded with monomers and dimers of Sb at the same energy per atom. Results are compared with simulations using both the TRIM program and molecular dynamics code.

A systematic approach has been used to optimise the fabrication process of pentacene-based nonvolatile organic thin film memory transistors (OTFMTs) operating at low programming voltages. In the first part of this work, reliable, reproducible and hysteresis free organic metal-insulator-semiconductor (OMIS) devices and organic thin film transistors (OTFTs) were fabricated and characterised. All devices were based on poly(methyl methacrylate) (PMMA) and poly(vinyl phenol) (PVP) as the organic insulators. The second part of this work focused on optimising the evaporation parameters to fabricate high-performance pentacene-based devices. About 50 nm thickness of pentacene film with a deposition rate of 0.03 nm s-1 on ~ 300 nm of PMMA was found to produce large, uniform and condense grains leading to high quality devices. OTFTs with high mobility of 1.32 cm2 V−1 s−1, on/off current ratio of 106, and negligible hysteresis and leakage current were demonstrated. The effect of the environment on the OTFTs obehaviour was also investigated. The bias stress effect was also investigated in terms of threshold voltage shift ΔVT at various conditions and times. The results show ΔVT increases with the increase of stress voltage. A negligible hysteresis is evident between the forward and reverse direction of the transfer characteristics and the shape of the transfer characteristics does not change with the bias stress. Floating gate memory structures with thin layer of gold, gold nanoparticles (AuNPs) and single walled carbon nanotubes (SWCNTs) were fabricated and characterised during this investigation. Hysteresis in memory structures was a clear indication of the memory effect and charge storage in these devices. Also, the hysteresis was centred close to 0 V for SWCNTs-based structures, which indicate that a low operation voltage is needed to charge the devices. A memory window of about 40 V was observed for AuNPs-based memory devices based on PVP; while the memory windows for devices based on PMMA with thin layer of Au and AuNPs floating gates were 22 V and 32 V, respectively. The electrical properties of the OTFMTs were improved by the use of the Au nanoparticles as the floating gate compared with that of an Au thin film. Using appropriate negative or positive voltages, the floating gate was charged and discharged, resulting in a clear shift in the threshold voltage of the memory transistors. Negative and positive pulses of 1 V resulted in clear write and erase states, respectively. Additionally, these organic memory transistors exhibited rather high carrier mobility of about μ = 0.319 cm2 V-1 s-1. Furthermore the data retention and endurance measurements confirmed the non-volatile memory properties of the memory devices fabricated in this study.

Building functional thin-film-transistor (TFT) circuits is crucial for applications such as wearable, implantable and transparent electronics. Therefore, developing a compact model of an emerging semiconductor material for accurate circuit simulation is the most fundamental requirement for circuit design. Further, unique analogue building blocks are needed due to the specific properties and non-idealities of TFTs. This dissertation reviews the major developments in thin-film transistor (TFT) modelling for the computer-aided design (CAD) and simulation of circuits and systems. Following the progress in recent years on oxide TFTs, we have successfully developed a Verilog-AMS model called the CAMCAS model, which supports computer-aided circuit simulation of oxide-TFTs, with the potential to be extended to other types of TFT technology families. For analogue applications, an accurate small signal model for thin film transistors (TFTs) is presented taking into account non-idealities such as contact resistance, parasitic capacitance, and threshold voltage shift to exhibit higher accuracy in comparison with the adapted CMOS model. The model is used to extract the zeros and poles of the frequency response in analogue circuits. In particular, we consider the importance of device-circuit interactions (DCI) when designing thin film transistor circuits and systems and subsequently examine temperature- and process-induced variations and propose a way to evaluate the maximum achievable intrinsic performance of the TFT. This is aimed at determining when DCI becomes crucial for a specific application. Compensation methods are reviewed to show examples of how DCI is considered in the design of AMOLED displays. Based on these design considerations, analogue building blocks including voltage and current references and differential amplifier stages have been designed to expand the analogue library specifically for TFT circuit design. The $V_T$ shift problem has been compensated based on unique circuit structures. For a future generation of application, where ultra low power consumption is a critical requirement, we investigate the TFT’s subthreshold operation through examining several figures of merit including intrinsic gain ($A_i$), transconductance efficiency ($g_m/I_{DS}$) and cut-off frequency ($f_T$). Here, we consider design sensitivity for biasing circuitry and the impact of device variations on low power circuit behaviour.

No description available.

No description available.

Superconductivity and ferromagnetism are two antagonistic physical phenomena which their coexistence in a uniform material can be resolved only under extraordinary conditions. The reason for that is the phonon-mediated attraction energy between electrons which results in the formation of the so-called Cooper pairs, is usually smaller that the exchange (Zeeman) interaction between electrons which tend to align the electron spins. However, non-zero total momentum Cooper pairs can be accomplished even in the presence of an exchange field as surprisingly! predicted first by Fulde and Ferrel [1] and independently by Larkin and Ovchinikov [2] nearly 50 years ago. This coexistence has already been observed experimentally in both bulk samples [3, 4] and in thin films [5-7] which result from a different type of electron-pairing mechanism which electrons with spin pointing in the same direction team up to form Cooper pairs with one unit of spin, resulting in the so-called triplet superconductivity. Apart from this so-called ferromagnetsuperconductors which both superconducting and ferromagnetism order parameters are present in a uniform material, hybrid systems [8] are made form materials with different or even mutually exclusive properties. Therefore the overall property can be strongly affected by the interaction between constituent materials. The present work, concerns such a hybrid system where Nb, a superconducting metal having transition temperature below 9.5K, is placed in contact with a ferromagnetic metal, Gd with bulk Curie temperature of around 290 K in a form of a nanocomposite. The mutual immiscibility of these two elements gives us the opportunity to take advantage of both the superconduction and ferromagnetism properties of the constituents and further study the transport and magnetic behavior of the system and their effects on each other specially on the critical current of the superconductor which is expected to be modified by the proximity of the ferromagnetic metal.

The thesis describes novel glass micropipette thermal sensor fabricated in cost-effective manner and thermal conductivity measurement of carbon nanotubes (CNT) thin film using the developed sensor. Various micrometer-sized sensors, which range from 2 µm to 30 µm, were produced and tested. The capability of the sensor in measuring thermal fluctuation at micro level with an estimated resolution of ±0.002oC is demonstrated. The sensitivity of sensors was recorded from 3.34 to 8.86 µV/oC, which is independent of tip size and dependent on the coating of Nickel. The detailed experimental setup for thermal conductivity measurement of CNT film is discussed and 73.418 W/moC was determined as the thermal conductivity of the CNT film at room temperature.

This research was undertaken to improve the understanding of structure-property-performance relationships in crosslinked polyamide (PA) thin-film composite (TFC) membranes as characterized by liquid and gas permeation studies. The ultrathin PA selective layer formed by interfacial polymerization between meta-phenylene diamine and trimesoyl chloride was confirmed to contain dense polymer matrix regions and defective regions in both dry and hydrated states. The first part of this research studied the effect of non-selective convection through defective regions on water flux and solute flux in pressure-assisted forward osmosis (PAFO). Through systematic comparison with cellulose triacetate (CTA) and PEBAX-coated PA-TFC membranes, the existence of defects in pristine, hydrated PA-TFC membranes was verified, and their effects were quantified by experimental and modeling methods. In the membrane orientation of selective layer facing the draw solution, water flux increases of up to 10-fold were observed to result from application of low hydraulic pressure (1.25 bar). Convective water flux through the defects was low (< 1% of total water flux for PA-TFC membranes) and of little consequence in practical FO or reverse osmosis (RO) applications. However, it effectively mitigated the concentration polarization in PAFO and therefore greatly increased the diffusive flux through the dense regions. The second part of this research characterized the structures of the PA material and the PA selective layer by gas adsorption and gas permeation measurements. Gas adsorption isotherms (N2 at 77K, CO2 at 273K) confirmed the microporous nature of PA in comparison with dense CTA and polysulfone materials. Gas permeation through the commercial PA-TFC membranes tested occurred primarily in the defective regions, resulting in Knudsen gas selectivity for various gas pairs. Applying a Nafion coating layer effectively plugged the defects and allowed gas permeation through the dense PA regions, which significantly decreased gas permeance and increased gas selectivity. Specifically, high He and H2 selectivity against CO2 suggests the potential applications of this membrane in He recovery and CO2 capture in pre-combustion. Finally, the dense PA matrix was modified with two types of novel nanofiller to improve desalination performance in RO. A series of dense, nano-sized (1-3 nm) polyhedral oligomeric silsesquioxanes (POSS) with different functional groups were systematically incorporated into the PA matrix by physical blending or chemical fixation. The free volume of the PA matrix increased with addition of POSS, leading to water flux increases of up to 67 %, while maintaining high NaCl rejections. The effects of adding microporous, hydrophobic zeolitic imidazolate framework-8 (ZIF-8) nanoparticles into PA are presented in the last chapter. A 162 % water flux increase was achieved without decreasing NaCl rejection. This interesting result can be attributed to a less crosslinked PA structure and to the intrinsic desalination properties of ZIF-8.

Emerging transparent conducting and semiconducting oxide (TCO) and (TSO) materials have achieved success in display markets. Due to their excellent electrical performance, TSOs have been chosen to enhance the performance of traditional displays and to evaluate their application in future transparent and flexible displays. This dissertation is devoted to the study ZnO-based thin film transistors (TFTs) using multilayer dielectrics and channel layers. Using multilayers to engineer transistor parameters is a new approach. By changing the thickness, composition, and sequence of the layers, transistor performance can be optimized. In one example, Al2O3/Ta2O5 bilayer gate dielectrics, grown by atomic layer deposition at low temperature were developed. The approach combined high dielectric constant of Ta2O5 and the excellent interface quality of Al2O3/ZnO, resulting in enhanced device performance. Using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer stack as a TFT channel with tunable layer thicknesses resulted in significant improvement in TFT stability. Atomic layer deposited SnO2 was developed as a gate electrode to replace ITO in thin film transistors and circuits. The SnO2 films deposited at 200 °C show low electrical resistivity of ~3.1×10-3 Ohm-cm with the high transparency of ~93%. TFT fabricated with SnO2 gate show excellent transistor properties. Using results from the above experiments, we have developed a novel process in which thin film transistors (TFTs) are fabricated using one binary oxide for all transistor layers (gate, source/drain, semiconductor channel, and dielectric). In our new process, by simply changing the flow ratio of two chemical precursors, C8H24HfN4 and (C2H5)2Zn, in an ALD system, the electronic properties of the binary oxide HZO were controlled from conducting, to semiconducting, to insulating. A complete study of HZO thin films deposited by (ALD) was performed. The use of the multi-layer (HfO2/ZnO) channel layer plays a key role in improving the bias stability of the devices. The low processing temperature of all materials at 160 °C is an advantage for the fabrication of fully transparent and flexible devices. After precise device engineering, including growth temperature, gate dielectric, electrodes (S/D&G) and semiconductor thickness, TFT with excellent device performance are obtained.