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Optical functions of wide band gap semiconductors /Chan, Yung, January 2004 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2006.
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Wide band gap semiconductors and insulators : synthesis, processing and characterization /Hersh, Peter A. January 1900 (has links)
Thesis (Ph. D.)--Oregon State University, 2008. / Printout. Includes bibliographical references (leaves 150-157). Also available on the World Wide Web.
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Optical functions of wide band gap semiconductorsChan, Yung, 陳勇 January 2004 (has links)
published_or_final_version / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy
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Advanced modeling of wide band gap semiconductor materials and devicesBellotti, E. (Enrico) 08 1900 (has links)
No description available.
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Effects of growth processes on the morphological, structural and optical properties of II-VI on III-V heterostructures. / 不同的生長處理對II-VI/III-V外延層的表面、結構和光學特性的影響 / Effects of growth processes on the morphological, structural and optical properties of II-VI on III-V heterostructures. / Bu tong de sheng chang chu li dui II-VI/III-V wai yan ceng de biao mian, jie gou he guang xue te xing de ying xiangJanuary 2001 (has links)
Ha Kwong-leung = 不同的生長處理對II-VI/III-V外延層的表面、結構和光學特性的影響 / 夏廣良. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2001. / Includes bibliographical references (leaves 76-79). / Text in English; abstracts in English and Chinese. / Ha Kwong-leung = Bu tong de sheng chang chu li dui II-VI/III-V wai yan ceng de biao mian, jie gou he guang xue te xing de ying xiang / Xia Guangliang. / Acknowledgments --- p.i / Abstract --- p.ii / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Brief introduction --- p.1 / Chapter 1.2 --- Background of the epitaxial growth --- p.4 / Chapter 1.3 --- Our work --- p.6 / Chapter Chapter 2 --- Experimental procedures / Chapter 2.1 --- Substrate preparation --- p.7 / Chapter 2.2 --- Metal-organic sources --- p.9 / Chapter 2.3 --- Growth conditions --- p.10 / Chapter Chapter 3 --- Characterization methods / Chapter 3.1 --- Surface morphology --- p.13 / Chapter 3.2 --- X-ray diffraction --- p.14 / Chapter 3.3 --- Optical properties / Chapter 3.3.1 --- Photoluminescence --- p.17 / Chapter 3.3.2 --- General properties of PL spectrum of ZnSe/GaAs --- p.18 / Chapter 3.4 --- Other techniques --- p.21 / Chapter Chapter 4 --- Influence on the properties of epilayers by the thickness of the low-temperature buffer layer --- p.22 / Chapter 4.1 --- Effects on the surface morphology --- p.23 / Chapter 4.2 --- Effects on the structural properties --- p.31 / Chapter 4.3 --- Effects on the optical properties --- p.35 / Chapter Chapter 5 --- Influence of thickness of epilayers on their properties --- p.39 / Chapter 5.1 --- Effects on the surface morphology --- p.40 / Chapter 5.2 --- Effects on the structural properties --- p.45 / Chapter 5.3 --- Effects on the optical properties --- p.50 / Chapter Chapter 6 --- Influence on the epilayers by passivating with different MO sources and different durations of interruption --- p.53 / Part I: Passivation by different MO sources / Chapter 6.1 --- Effects on the surface morphology --- p.55 / Chapter 6.2 --- Effects on the structural properties --- p.58 / Chapter 6.3 --- Effects on the optical properties --- p.61 / Part II: Different durations of interruption / Chapter 6.4 --- Effects on the surface morphology --- p.63 / Chapter 6.5 --- Effects on the structural properties --- p.66 / Chapter 6.6 --- Effects on the optical properties --- p.70 / Summary --- p.73 / Conclusions --- p.74 / References --- p.76
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Stability and structure of hydrogen defects in zinc oxideJokela, Slade Joseph, January 2006 (has links) (PDF)
Thesis (Ph. D.)--Washington State University, December 2006. / Includes bibliographical references (p. 122-130).
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Post ion-implantation surface planarization process for 4H-SiC wafers using carbon encapsulation techniqueYellai, Kashyap, Williams, John R. January 2006 (has links) (PDF)
Thesis(M.S.)--Auburn University, 2006. / Abstract. Vita. Includes bibliographic references.
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Laser doping and metallization of wide bandgap materials : SiC, GaN and AlNSalama, Islam A. 01 April 2003 (has links)
No description available.
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Wide band gap nanomaterials and their applicationsZhang, Shaolin, 張少林 January 2009 (has links)
published_or_final_version / Physics / Master / Master of Philosophy
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Dopant imaging and profiling of wide bandgap semiconductor devices /Buzzo, Marco. January 2007 (has links)
ETH, Diss.--Zürich, 2007.
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