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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Optical functions of wide band gap semiconductors /

Chan, Yung, January 2004 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2006.
2

Wide band gap semiconductors and insulators : synthesis, processing and characterization /

Hersh, Peter A. January 1900 (has links)
Thesis (Ph. D.)--Oregon State University, 2008. / Printout. Includes bibliographical references (leaves 150-157). Also available on the World Wide Web.
3

Optical functions of wide band gap semiconductors

Chan, Yung, 陳勇 January 2004 (has links)
published_or_final_version / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy
4

Advanced modeling of wide band gap semiconductor materials and devices

Bellotti, E. (Enrico) 08 1900 (has links)
No description available.
5

Effects of growth processes on the morphological, structural and optical properties of II-VI on III-V heterostructures. / 不同的生長處理對II-VI/III-V外延層的表面、結構和光學特性的影響 / Effects of growth processes on the morphological, structural and optical properties of II-VI on III-V heterostructures. / Bu tong de sheng chang chu li dui II-VI/III-V wai yan ceng de biao mian, jie gou he guang xue te xing de ying xiang

January 2001 (has links)
Ha Kwong-leung = 不同的生長處理對II-VI/III-V外延層的表面、結構和光學特性的影響 / 夏廣良. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2001. / Includes bibliographical references (leaves 76-79). / Text in English; abstracts in English and Chinese. / Ha Kwong-leung = Bu tong de sheng chang chu li dui II-VI/III-V wai yan ceng de biao mian, jie gou he guang xue te xing de ying xiang / Xia Guangliang. / Acknowledgments --- p.i / Abstract --- p.ii / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Brief introduction --- p.1 / Chapter 1.2 --- Background of the epitaxial growth --- p.4 / Chapter 1.3 --- Our work --- p.6 / Chapter Chapter 2 --- Experimental procedures / Chapter 2.1 --- Substrate preparation --- p.7 / Chapter 2.2 --- Metal-organic sources --- p.9 / Chapter 2.3 --- Growth conditions --- p.10 / Chapter Chapter 3 --- Characterization methods / Chapter 3.1 --- Surface morphology --- p.13 / Chapter 3.2 --- X-ray diffraction --- p.14 / Chapter 3.3 --- Optical properties / Chapter 3.3.1 --- Photoluminescence --- p.17 / Chapter 3.3.2 --- General properties of PL spectrum of ZnSe/GaAs --- p.18 / Chapter 3.4 --- Other techniques --- p.21 / Chapter Chapter 4 --- Influence on the properties of epilayers by the thickness of the low-temperature buffer layer --- p.22 / Chapter 4.1 --- Effects on the surface morphology --- p.23 / Chapter 4.2 --- Effects on the structural properties --- p.31 / Chapter 4.3 --- Effects on the optical properties --- p.35 / Chapter Chapter 5 --- Influence of thickness of epilayers on their properties --- p.39 / Chapter 5.1 --- Effects on the surface morphology --- p.40 / Chapter 5.2 --- Effects on the structural properties --- p.45 / Chapter 5.3 --- Effects on the optical properties --- p.50 / Chapter Chapter 6 --- Influence on the epilayers by passivating with different MO sources and different durations of interruption --- p.53 / Part I: Passivation by different MO sources / Chapter 6.1 --- Effects on the surface morphology --- p.55 / Chapter 6.2 --- Effects on the structural properties --- p.58 / Chapter 6.3 --- Effects on the optical properties --- p.61 / Part II: Different durations of interruption / Chapter 6.4 --- Effects on the surface morphology --- p.63 / Chapter 6.5 --- Effects on the structural properties --- p.66 / Chapter 6.6 --- Effects on the optical properties --- p.70 / Summary --- p.73 / Conclusions --- p.74 / References --- p.76
6

Stability and structure of hydrogen defects in zinc oxide

Jokela, Slade Joseph, January 2006 (has links) (PDF)
Thesis (Ph. D.)--Washington State University, December 2006. / Includes bibliographical references (p. 122-130).
7

Post ion-implantation surface planarization process for 4H-SiC wafers using carbon encapsulation technique

Yellai, Kashyap, Williams, John R. January 2006 (has links) (PDF)
Thesis(M.S.)--Auburn University, 2006. / Abstract. Vita. Includes bibliographic references.
8

Laser doping and metallization of wide bandgap materials : SiC, GaN and AlN

Salama, Islam A. 01 April 2003 (has links)
No description available.
9

Wide band gap nanomaterials and their applications

Zhang, Shaolin, 張少林 January 2009 (has links)
published_or_final_version / Physics / Master / Master of Philosophy
10

Dopant imaging and profiling of wide bandgap semiconductor devices /

Buzzo, Marco. January 2007 (has links)
ETH, Diss.--Zürich, 2007.

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