Cette thèse vise à améliorer la méthode d'analyse du fond continu inélastique afin de l'appliquer à des cas qui présentent un intérêt technologique. En effet, ces améliorations sont cruciales car elles portent sur des critères de précision et de gain de temps, plus particulièrement pour l’étude de dispositifs présentant plusieurs couches profondément enterrées de matériaux bien distincts. Ainsi, l'analyse du fond continu inélastique associée à la spectroscopie de photoélectrons à rayons X durs (HAXPES) présente un grand intérêt car l’HAXPES permet de sonder plus profondément dans un échantillon qu'avec la spectroscopie de photoélectrons à rayons X classique (XPS). Ce présent travail porte sur des échantillons technologiquement pertinents, principalement des transistors à haute mobilité d'électrons (HEMTs), à certaines étapes cruciales de leur processus de fabrication, tels que des recuits. Il est donc très important que ces analyses soient effectuées de manière non destructive afin de préserver les interfaces enterrées. Ce sont souvent l'emplacement de phénomènes complexes qui sont critiques pour les performances du dispositif et une meilleure compréhension est une condition préalable à l’amélioration des dispositifs. Dans ce travail, les phénomènes de diffusion en profondeur sont étudiés grâce à l’analyse du fond continu inélastique associée à l’HAXPES (en utilisant le logiciel QUASES) pour des profondeurs allant jusqu'à 60 nm. Les résultats de distribution en profondeur présentent des écarts par rapport aux mesures TEM inférieures à 5%. Le choix des paramètres d'entrée de la méthode est discuté pour une large gamme d'échantillons et des règles simples en sont issues qui rendent l'analyse réelle plus facile et plus rapide à effectuer. Enfin, il a été montré que la spectromicroscopie faite avec la technique HAXPEEM peut fournir des spectres à chaque pixel utilisables pour l’analyse du fond continu inélastique. Cela peut fournir une cartographie 3D de la distribution en profondeur des éléments de manière non-destructive. / This thesis aims at improving the inelastic background analysis method in order to apply it to technologically relevant samples. Actually, these improvements are utterly needed as they concern criteria of accuracy and time saving particularly for analysis of devices presenting deeply buried layers with different materials. For this purpose, the interest of the inelastic background analysis method is at its best when combined with hard X-ray photoelectron spectroscopy (HAXPES) because HAXPES allows to probe deeper in the sample than with conventional X-ray photoelectron spectroscopy (XPS). The present work deals with technologically relevant samples, mainly the high-electron mobility transistor (HEMT), at some crucial steps of their fabrication process as annealing. Actually, it is very important that these analyses shall be performed non-destructively in order to preserve the buried interfaces. These are often the location of complex phenomena that are critical for device performances and a better understanding is often a prerequisite for any improvement. In this thesis, the in-depth diffusion phenomena are studied with the inelastic background analysis technique (using the QUASES software) combined with HAXPES for depth up to 60 nm. The depth distribution results are determined with deviations from TEM measurements smaller than a typical value of 5%. The choice of the input parameters of the method is discussed over a large range of samples and simple rules are derived which make the actual analysis easier and faster to perform. Finally, it was shown that spectromicroscopy obtained with the HAXPEEM technique can provide spectra at each pixel usable for inelastic background analysis. This is a proof of principle that it can provide a 3D mapping of the elemental depth distribution with a nondestructive method. / Denne afhandling har til formål at forbedre den uelastiske baggrundsanalysemetode til anvendelser i den til teknologiske industri. Faktisk er disse forbedringer absolut nødvendige, for at opnå nøjagtighed og tidsbesparelse, især for analyse af prøver med dybt begravede lag af forskellige materialer. Til det formål er interessen for den uelastiske baggrundsanalysemetode bedst i kombination med hård røntgenfotoelektron-spektroskopi (HAXPES), fordi HAXPES gør det muligt at probe dybere i prøven end med konventionel røntgenfotoelektron-spektroskopi (XPS). Dette arbejde beskæftiger sig med teknologisk relevante prøver, hovedsagelig høj-elektron mobilitetstransistor (HEMT), på nogle afgørende trin i deres fremstillingsproces som fx annealing. Faktisk er det meget vigtigt, at disse analyser udføres på en ikke-destruktiv måde for at bevare de begravede grænseflader. Det er ofte her de komplekse fysiske fænomener opstår, som er kritiske for fuktionaliteten, og en bedre forståelse af grænsefladerne er ofte en forudsætning for at kunne forbedre denne. I denne afhandling studeres de dybdegående diffusionsfænomener med den uelastiske baggrundsanalyse teknik (ved hjælp af QUASES software) kombineret med HAXPES for dybder op til 60 nm. Dybdestributionsresultaterne har afvigelser fra TEM-målinger mindre end en typisk værdi på 5%. Valget af input parametre for metoden er diskuteret på bagground af et stort udvalg af prøver samt omfattende simuleringer og enkle regler er udledt, hvilket gør den praktiske analyse nemmere og hurtigere at udføre. Endelig blev det vist, at spektromikroskopi opnået med HAXPEEM-teknikken kan tilvejebringe spektre ved hver enkelt pixel som kan anvendes til uelastisk baggrundsanalyse. Dette viser at i princippet kan en 3D-billeddannelse af den elementære dybdefordeling bestemmes ikke destruktivt.

Le graphène est une simple couche de nid d'abeille motifs atomes de carbone. Il a suscité beaucoup d'intérêt dans la dernière décennie en raison de ses excellentes propriétés électroniques, optiques et mécaniques, etc., et montre larges perspectives d'applications dans le futur. Parfois, les propriétés du graphène doivent être modulées pour s’adapter à des applications spécifiques. Par exemple, le contrôle du niveau de dopage fournit un bon moyen de moduler les propriétés électriques et magnétiques de graphène, qui est important pour la conception de dispositifs de mémoire et de logique à base de graphène. En outre, la possibilité de régler la conductance électrique peut être utilisée pour fabriquer le transistor de graphène, et le dépôt chimique en phase vapeur (CVD) Procédé montre la possibilité d'effectuer la préparation de graphène intégrées dans les processus de fabrication de semi-conducteur. L'injection de spin et l'irradiation sont méthodes efficaces et pratiques pour adapter les propriétés de transport du graphène. Mais en raison du processus de fabrication complexe, il est difficile de préparer le dispositif de transport de spin graphène succès. La lithographie et décoller les processus qui impliquent utilisant résine photosensible va dégénérer les propriétés de transport du graphène. En outre, la sensibilité du graphène aux molécules H2O et O2 lorsqu'il est exposé à l’air ambiant entraînera faible signal de rotation et le bruit de fond. L'irradiation fournit une méthode propre à moduler les propriétés électriques de graphène qui n’impliquent pas de traitement chimique. En ions ou irradiation d'électrons, la structure de bande électronique de graphène peut être réglé et la structure en treillis est modulé aussi bien. En outre, les impuretés chargées et dopage résultant de l'irradiation peuvent modifier les propriétés électroniques du graphène comme la diffusion électron-phonon, libre parcours moyen et la densité de support. Comme indiqué, le graphène oxydation peut être induite par exposition à un plasma d'oxygène, et le N- dopage de graphène par recuit thermique dans de l'ammoniac a été démontré. En outre, la souche dans le graphène peut également être adaptée par irradiation, qui contribue également à la modification des propriétés de transport de graphène. En conclusion, l'irradiation fournit une méthode physique efficace pour moduler les propriétés structurelles et de transport de graphène, qui peuvent être appliqués dans la mémoire à base de graphène et des dispositifs logiques, transistor, et des circuits intégrés. Dans cette thèse, l'irradiation d'ions hélium a été réalisée sur le graphène cultivé sur substrat SiO2 par la méthode CVD, et les propriétés structurelles et de transport ont été étudiés. Le dopage de transfert de charge dans le graphène induite par les résultats d'irradiation dans une modification de ces propriétés, qui suggère une méthode pratique pour les adapter. En outre, l'irradiation par faisceau d'électrons a été effectuée sur graphène cultivé sur substrat de SiC. Les amorphisations progressives, contraintes et d'électrons dopage locales contribuent à la modification des propriétés structurelles et de transport dans le graphène qui peuvent être observés. / Graphene is a single layer of honeycomb patterned carbon atoms. It has attracted much of interest in the past decade due to its excellent electronic, optical, and mechanical properties, etc., and shows broad application prospects in the future. Sometimes the properties of graphene need to be modulated to adapt for specific applications. For example, control of doping level provides a good way to modulate the electrical and magnetic properties of graphene, which is important to the design of graphene-based memory and logic devices. Also, the ability to tune the electrical conductance can be used to fabricate graphene transistor, and the chemical vapor deposition (CVD) method shows the possibility to make the preparation of graphene integrated into semiconductor manufacture processes. Moreover, the sensitivity of graphene to the H2O and O2 molecules when exposed to the air ambient will result in weak spin signal and noise background. Irradiation provides a clean method to modulate the electrical properties of graphene which does not involve chemical treatment. By ion or electron irradiation, the electronic band structure of graphene can be tuned and the lattice structure will be modulated as well. Moreover, the charged impurities and doping arising from irradiation can change the electronic properties of graphene such as electron-phonon scattering, mean free path and carrier density. As reported, graphene oxidization can be induced by exposure to oxygen plasma, and N-Doping of Graphene through thermal annealing in ammonia has been demonstrated. Furthermore, the strain in graphene can also be tailored by irradiation, which also contributes to the modification of transport properties of graphene. In conclusion, irradiation provides an efficient physical method to modulate the structural and transport properties of graphene, which can be applied in the graphene-based memory and logic devices, transistor, and integrated circuits (ICs). In this thesis, Helium ion irradiation was performed on graphene grown on SiO2 substrate by CVD method, and the structural and transport properties were investigated. The charge transfer doping in graphene induced by irradiation results in a modification of these properties, which suggests a convenient method to tailor them. Moreover, electron beam irradiation was performed on graphene grown on SiC substrate. The local progressive amorphization, strain and electron doping contribute to the modification of structural and transport properties in graphene which can be observed.

<p>Atoms, molecules and clusters all constitute building blocks of macroscopic matter. Therefore, understanding the electronic and geometrical properties of such systems is the key to understanding the properties of solid state objects.</p><p>In this thesis, some atomic, molecular and cluster systems (clusters of O₂, CH₃Br, Ar/O₂, Ar/Xe and Ar/Kr; dimers of Na; Na and K atoms) have been investigated using synchrotron radiation, and in the two last instances, laser light. We have performed x-ray photoelectron spectroscopy (XPS) on all of these systems. We have also applied ultraviolet photoelectron spectroscopy (UPS), resonant Auger spectroscopy (RAS) and near-edge x-ray absorption spectroscopy (NEXAFS) to study many of the systems. Calculations using <i>ab initio</i> methods, namely density functional theory (DFT) and Møller-Plesset perturbation theory (MP), were employed for electronic structure calculations. The geometrical structure was studied using a combination of <i>ab initio</i> and molecular dynamics (MD) methods.</p><p>Results on the dissociation behavior of CH₃Br and O₂ molecules in clusters are presented. The dissociation of the Na₂ molecule has been characterized and the molecular field splitting of the Na 2<i>p</i> level in the dimer has been measured. The molecular field splitting of the CH₃Br 3<i>d</i> level has been measured and the structure of CH₃Br clusters has been determined to be similar to the structure of the bulk solid. The diffusion behavior of O₂, Kr and Xe on large Ar clusters, as a function of doping rate, has been investigated. The shake-down process has been observed from excited states of Na and K. Laser excited Na atoms have been shown to be magnetically aligned. The shake-down process was used to characterize the origin of various final states that can be observed in the spectrum of ground-state K.</p>

<p>Clusters are finite ensembles of atoms or molecules with sizes in the nanometer regime (<i>i.e.</i> nanoparticles). This thesis present results on the geometric and electronic structure of homogeneous and heterogeneous combinations of atoms and molecules. The systems have been studied with synchrotron radiation and valence, core and Auger electron spectroscopic techniques.</p><p>The first theme of the thesis is that of mixed clusters. It is shown that by varying the cluster production technique both structures that are close to that predicted by equilibrium considerations can be attained as well as far from equilibrium structures.</p><p>Electronic processes following ionization constitute the second theme. The post-collision interaction phenomenon, energy exchange between the photo- and the Auger electrons, is shown to be different in clusters of argon, krypton and xenon. A model is proposed that takes polarization screening in the final state into account. This result is of general character and should be applicable to the analysis of core level photoelectron and Auger electron spectra of insulating and semi-conducting bulk materials as well.</p><p>Interatomic Coloumbic Decay is a process that can occur in the condensed phases of weakly bonded systems. Results on the time-scale of the process in Ne clusters and mixed Ar/Ne clusters are herein discussed, as well observations of resonant contributions to the process. In analogy to Auger <i>vis-à-vis</i> Resonant Auger it is found that to the ICD process there is a corresponding Resonant ICD process possible. This has later been observed in other systems and by theoretical calculations as well in subsequent works by other groups.</p><p>Delocalization of dicationic valence final states in the hydrogen bonded ammonia clusters and aqueous ammonia has also been investigated by Auger electron spectroscopy. With those results it was possible to assign a previously observed feature in the Auger electron spectrum of solid ammonia.</p>

Abstract : The objectives of this work were to prepare and characterize films of benzylic amide macrocycles and rotaxanes obtained by functionalisation of an acidterminated self-assembled monolayer (SAM) on gold, and thus to probe the aptitude of these surfaces for applications in the field of the nanotechnologies. We initially studied the self-assembled monolayer of 11-mercaptoundecanoic acid and focused on its composition, structure and organization. We show that the molecules of alcanethiol are oriented with the acid group pointing out from the surface. The film is highly ordered with defect density below 0.2%. We investigated the functionalisation process with the covalently bound Mac-OH macrocycle, with the physisorbed Mac-pyridine macrocycle and with the naphtalimide rotaxane. The latter is also anchored to the SAM through a non-covalent interaction. We focused on the comprehension of both quantitative as qualitative characteristics of the films, such as the degree of functionalisation, their stability with respect to external constraints, their order and homogeneity, their structure and their orientation. By combining techniques such as X-ray photoemission spectroscopy, infrared reflection-absorption spectroscopy, atomic force microscopy, electrochemical and contact angle measurements, we demonstrated that the films of macrocycles reach a high degree of functionalisation. The layers are homogeneous and a preferential orientation of the macrocycle molecules with the plan of the ring tilted with respect to the surface and with the alkyl chains pointing-out from the films is observed. In addition, we studied the possibility of using the macrocycle films for molecular recognition, employing the Fc-Gly-Gly molecule as a model target. Through similar experiments and analysis, films of naphtalimide rotaxane were proven to give a good functionalisation of SAM. The molecule adsorbs with a preferential orientation of the linear axis parallel to the surface and the macrocycle unit normal to it. We characterized the fluorescent properties of the molecule due to the naphtalimide group and showed that when adsorbed on a gold substrate the presence of the self-assembled monolayer prevents total quenching. <br> Résumé : Les objectifs de ce travail étaient de caractériser des films de macrocycles et de rotaxanes de type amide benzylique obtenus par la fonctionnalisation de monocouches auto-assemblées d'alcanethiols, ayant un groupe acide terminal, sur une surface d'or, et ainsi de mettre en évidence certaines des potentialités de ces surfaces en vue d'applications éventuelles dans le domaine des nanotechnologies. Nous avons d'abord étudié la monocouche auto-assemblée de l'acide 11-mercaptoundecanoïque et particulièrement les aspects tels que la composition, la structure et l'organisation du film et nous avons mis en évidence que les molécules d'alcanethiol sont orientées dans le film avec le groupe acide vers l'extérieur de la surface, de façon à pouvoir interagir avec les molécules à greffer, et que le degré d'ordre de la monocouche est très élevé, en montrant celle-ci une fraction de défauts inférieure au 0.2% de l'aire totale du film. L'étude de la fonctionnalisation successive avec le macrocycle Mac-OH, lié de façon covalente, et le macrocycle Mac-pyridine ainsi que la rotaxane naphtalimide, ancrés à travers une interaction non-covalente à la monocouche auto-assemblée, a porté une attention particulière à la compréhension d'aspects tels que le degré de recouvrement de la surface, la stabilité vis-à-vis de contraintes externes, l'ordre et l'homogénéité, ainsi que la structure des films et l'orientation des molécules. Grâce à la combinaison de techniques telles que l'XPS, l'IRAS, les techniques électrochimiques, les mesures d'angle de contact et l'AFM, nous avons mis en évidence que les films de macrocycle atteignent un recouvrement élevé et homogène de la monocouche autoassemblée et qu'une orientation des molécules de macrocycle, avec une inclinaison du plan de l'anneau par rapport à la surface et pointant leurs chaînes alkyles vers l'extérieure du film, est observée. Ensuite, nous avons abordé la possibilité d'impliquer les films de macrocycle en tant que récepteurs moléculaires d'une molécule modèle, la Fc-Gly-Gly. Par une caractérisation similaire, les films de la rotaxane naphtalimide ont montré d'atteindre un recouvrement élevé de la surface de la monocouche avec une orientation privilégiée des molécules avec l'axe parallèle et le macrocycle perpendiculaire à la surface pour pouvoir interagir, à travers les fonctions pyridine du macrocycle, avec la monocouche. De plus, nous avons caractérisé les propriétés fluorescentes de la molécule, résidantes dans son groupe naphtalimide, lorsqu'elle est adsorbée sur un substrat métallique, l'or, affectées par la présence de la monocouche auto-assemblée.

Atoms, molecules and clusters all constitute building blocks of macroscopic matter. Therefore, understanding the electronic and geometrical properties of such systems is the key to understanding the properties of solid state objects. In this thesis, some atomic, molecular and cluster systems (clusters of O2, CH3Br, Ar/O2, Ar/Xe and Ar/Kr; dimers of Na; Na and K atoms) have been investigated using synchrotron radiation, and in the two last instances, laser light. We have performed x-ray photoelectron spectroscopy (XPS) on all of these systems. We have also applied ultraviolet photoelectron spectroscopy (UPS), resonant Auger spectroscopy (RAS) and near-edge x-ray absorption spectroscopy (NEXAFS) to study many of the systems. Calculations using ab initio methods, namely density functional theory (DFT) and Møller-Plesset perturbation theory (MP), were employed for electronic structure calculations. The geometrical structure was studied using a combination of ab initio and molecular dynamics (MD) methods. Results on the dissociation behavior of CH3Br and O2 molecules in clusters are presented. The dissociation of the Na2 molecule has been characterized and the molecular field splitting of the Na 2p level in the dimer has been measured. The molecular field splitting of the CH3Br 3d level has been measured and the structure of CH3Br clusters has been determined to be similar to the structure of the bulk solid. The diffusion behavior of O2, Kr and Xe on large Ar clusters, as a function of doping rate, has been investigated. The shake-down process has been observed from excited states of Na and K. Laser excited Na atoms have been shown to be magnetically aligned. The shake-down process was used to characterize the origin of various final states that can be observed in the spectrum of ground-state K.

Clusters are finite ensembles of atoms or molecules with sizes in the nanometer regime (i.e. nanoparticles). This thesis present results on the geometric and electronic structure of homogeneous and heterogeneous combinations of atoms and molecules. The systems have been studied with synchrotron radiation and valence, core and Auger electron spectroscopic techniques. The first theme of the thesis is that of mixed clusters. It is shown that by varying the cluster production technique both structures that are close to that predicted by equilibrium considerations can be attained as well as far from equilibrium structures. Electronic processes following ionization constitute the second theme. The post-collision interaction phenomenon, energy exchange between the photo- and the Auger electrons, is shown to be different in clusters of argon, krypton and xenon. A model is proposed that takes polarization screening in the final state into account. This result is of general character and should be applicable to the analysis of core level photoelectron and Auger electron spectra of insulating and semi-conducting bulk materials as well. Interatomic Coloumbic Decay is a process that can occur in the condensed phases of weakly bonded systems. Results on the time-scale of the process in Ne clusters and mixed Ar/Ne clusters are herein discussed, as well observations of resonant contributions to the process. In analogy to Auger vis-à-vis Resonant Auger it is found that to the ICD process there is a corresponding Resonant ICD process possible. This has later been observed in other systems and by theoretical calculations as well in subsequent works by other groups. Delocalization of dicationic valence final states in the hydrogen bonded ammonia clusters and aqueous ammonia has also been investigated by Auger electron spectroscopy. With those results it was possible to assign a previously observed feature in the Auger electron spectrum of solid ammonia.

In this thesis we have performed core-electron spectroscopy studies of gas phase molecular systems starting with smaller diatomic, continuing with triatomic and extending our research to more complex polyatomic ones. We can subdivide the results presented here into two categories: the first one focusing on electronic fine structure and effect of the chemical bonds on molecular core-levels and the other one dealing with nuclear dynamics induced by creation of a core hole. In our research we have mostly used synchrotron radiation based techniques such as X-ray Photoelectron (XPS), X-ray Absorption (XAS), normal and Resonant Auger (AES and RAS, respectively) and Energy-Selected Auger Electron PhotoIon COincidence (ES-AEPICO) spectroscopies. We have demonstrated that resonant Auger spectroscopy can be used to aid interpretation of the features observed in XAS for Rydberg structures in the case of Cl2 and C1s−1π*1 states of allene molecules. The combined use of high-resolution spectroscopy with ab initio calculations can help the interpretation of strongly overlapped spectral features and disentangle their complex profiles. This approach enabled us to determine the differences in the lifetimes for core-hole 2p sublevels of Cl2 which are caused by the presence of the chemical bond. We have shown that contribution in terms of the Mulliken population of valence molecular orbitals is a determining factor for resonant enhancement of different final states and fragmentation patterns reached after resonant Auger decays in N2O. We have also performed a systematic study of the dependence of the C1s resonant Auger kinetic energies on the presence of different substituents in CH3X compounds. For the first time we have studied possible isomerization reaction induced by core excitation of acetylacetone. We could observe a new spectral feature in the resonant Auger decay spectra which we interpreted as a signature of core-excitation-induced keto-enol tautomerism.

Aqueous solutions were studied using photoelectron and Auger spectroscopy, based on synchrotron radiation and a liquid micro-jet setup. By varying the photon energy in photoelectron spectra, we depth profiled an aqueous tetrabutylammonium iodide (TBAI) solution. Assuming uniform angular emission from the core levels, we found that the TBA+ ions were oriented at the surface with the hydrophobic butyl arms sticking into the liquid. We investigated the association between ions and their neighbors in aqueous solutions by studying the electronic decay after core ionization. The (2p)−1 decay of solvated K+ and Ca2+ ions was studied. The main features in the investigated decay spectra corresponded to two-hole final states localized on the ions. The spectra also showed additional features, related to delocalized two-hole final states with vacancies on a cation and a neighboring water molecule. These two processes compete, and by comparing relative intensities and using the known rate for the localized decay, we determined the time-scale for the delocalized process for the two ions. We compared to delocalized electronic decay processes in Na+, Mg2+, and Al3+, and found that they were slower in K+ and Ca2+, due to different internal decay mechanisms of the ions, as well as external differences in the ion-solute distances and interactions. In the O 1s Auger spectra of aqueous metal halide solutions, we observed features related to delocalized two-hole final states with vacancies on a water molecule and a neighboring solvated anion. The relative intensity of these feature indicated that the strength of the interaction between the halide ions and water correlated with ionic size. The delocalized decay was also used to investigate contact ion pair formation in high concentrated potassium halide solutions, but no concrete evidence of contact ion pairs was observed. / Felaktigt tryckt som Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology 726

The Phthalocyanines (Pc’s) are a group of macro-cyclic molecules, widely investigated due to the possibility to use them in a variety of applications. Electronic and geometrical structure investigations of molecular model systems of Pc’s adsorbed on surfaces are important for a deeper understanding of the functionality of different Pc-based devices. Here, Pc’s monolayers and films, deposited on different surfaces, were investigated by X-ray Photoelectron Spectroscopy (XPS), X-ray Absorption Spectroscopy (XAS) and Scanning Tunneling Microscopy (STM). In addition Density Functional Theory (DFT) simulations were performed. For molecular films of Metal-free (H2Pc) and Iron (FePc) Pc’s, on surfaces, it is found that the intermolecular interaction is weak and the molecules arrange with their molecular plane mainly perpendicular to the surface. Several monolayer systems were characterized, namely H2Pc and FePc adsorbed on Graphite, ZnPc on InSb(001)-c(8x2), H2Pc on Al(110) and on Au(111). For all the studied monolayers it was found that the molecules are oriented with their molecular plane parallel to the surface. The electronic structure of the molecules is differently influenced by interaction with the surfaces. For H2Pc adsorbed on Graphite the nearly negligible effect of the surface on the molecular electronic structure allowed STM characterization of different molecular orbitals. A strong interaction is instead found in the case of H2Pc on Al(110) resulting in molecules strongly adsorbed, and partly dissociated. Modifications of the electronic and geometrical structure induced by alkali doping of H2Pc films and monolayers were characterized. It is found both for the H2Pc film on Al(110) and monolayer adsorbed on Au(111), that the molecular arrangement is changed upon doping by Potassium and Rubidium, respectively. Potassium doping of the H2Pc films results in a filling of previously empty molecular orbitals by a charge transfer from the alkali to the molecule, with significant modification of the molecular electronic structure.