In this thesis a study is made of the damage layer (as defined by its solubility in a HF-H2o2, or concentrated HF solution) produced by ion bombardment of Si. This thesis is concerned with not only the layer but also its usefulness in the study of radiation damage itself. The layer is examined with respect to the adverse effects it has upon the anodic oxidation and stripping technique, to the dose of incident ions required to produce it (ie the threshold dose), and to its relationship to the amorphous layer which has been observed with ion bombardment of Si. Annealing of the damage has been approached from two points of view. First the temperature dependence of the threshold dose is used to obtain information about the annealing of the damage that occurs between the formation of a discrete damage zone and the formation of a layer. Secondly using gas release of the radioactive Kr85 the annealing of the fully formed amorphous damage layer is followed. The solubility of the damage layer in a HF-H2o2 solution is shown to be a very useful tool in the study of radiation damage. Firstly it provides a convenient means of obtaining the mean range of the damage distribution as a function of incident ion energy. Secondly it is used to obtain the threshold dose for the formation of the damage layer, and thirdly it is used in the gas release experiments to give more detailed information about the Kr85 motion. / Thesis / Master of Science (MS)

<p> This project is concerned with medium energy heavy ion (60 KEV 75As, 40Ar, 120 KEV 150As2) implantation into single crystal iron at room temperature and 35°K. Resulting crystal properties are measured using the technique of high energy light ion (1.0 MEV 4He) channeling and backscattering. The phenomenon of oxygen recoil implantation by the bombarding ion is found to be an important effect to avoid if radiation damage is to be measured. In cases where oxygen recoil implantation has been eliminated, radiation damage was evident from an increase in the minimum channeling yield. The existence of damage beyond the expected damage range at room temperature is attributed to diffusion of defects. Some annealing of damage is observed in samples which have been damaged at 35°K and warmed to room temperature. At doses of about 10^16 atoms/cm^2, 80(±10)% of the implanted As is found to be at lattice sites.</p> <p> The merits and limitations of this technique as a simulation of 14 MEV neutron radiation damage are also discussed.</p> / Thesis / Master of Engineering (MEngr)