In this diploma thesis there is elaborated design of low-voltage power supply block using I3T25 technology. The theoretical part describes the basic structures used in the design, using CMOS and bipolar devices. Furthermore, the properties and the analysis used in the evaluation are described. In the design part there is an elaborated design of individual parts, including voltage references, current references, DAC converter, operational amplifier. In the last part, the power supply block is subjected to simulations for verification of temperature compensated output variables and analyzed circuit functionality.

This diploma thesis deals with precise design of Brokaw BandGap voltage reference comparing with MOS references. There is STEP BY STEP separation and analysis of proposed devices, using Monte Carlo analysis. There are also presented the methods for achieving a lower deviation of the output voltage for yielding device, which needs no trimming.

This diploma thesis is specialized on a design of a high accuracy voltage reference Bandgap. A very low temperature coefficient and output voltage approx. 1,205V are the main features of this circuit. The paper contains a derivation of the Bandgap principle, examples of realizations of the circuits and methods of compensation temperature dependence and manufacture process, design of Brokaw and Gilbert reference, design of a testchip and measurement results.

Power-efficient circuits are a vital step in moving towards a greener future. Battery life can get substantially improved by decreasing the amount of power a circuit needs. Lower power also leads to less excess heat generated. Electronics are within everything today – from phones and microwaves to cars! If we want to optimize the electronics to require less power, we need to understand it. In some integrated circuits that utilize bipolar transistors, it has been concluded that the main limitation regarding low-power, high-temperature operations is leakage currents that arise in reverse biased p–n junctions. There is a lack of understanding regarding the magnitude of these leakage currents, especially at higher temperatures. This thesis aims to provide an understanding of the magnitude of the leakage currents in lateral gated PNP bipolar transistors and to provide empirical models of these currents.A discussion of semiconductor physics takes place, explaining how leakage currents arise in reverse-biased pn junctions. Measurements were taken on a chip with the help of different instruments and a relay network that configured the experimental setup into different circuits while measurements were being conducted.It was shown that the leakage currents are clearly exponential to temperature, as was expected. Empirical models are created with the help of the Gauss-Newton linearization method and shown to be of the form<img src="http://www.diva-portal.org/cgi-bin/mimetex.cgi?$y=%20%5Ctheta_1%20%5Cmathrm%7Be%7D%5E%7B%5Ctheta_2%5Cleft(T-%5Ctheta_4%5Cright)%7D+%5Ctheta_3$" data-classname="equation" data-title="" />,where 𝜃 are parameters for the different models.A discussion is held on the impact of the results and how to improve upon them. Numerous sources of error are discussed, and further work is recommended.