This thesis concerns the development and characterisation of X-ray imaging systems based on single photon processing. “Colour” X-ray imaging opens up new perspectives within the fields of medical X-ray diagnosis and also in industrial X-ray quality control. The difference in absorption for different “colours” can be used to discern materials in the object. For instance, this information might be used to identify diseases such as brittle-bone disease. The “colour” of the X-rays can be identified if the detector system can process each X-ray photon individually. Such a detector system is called a “single photon processing” system or, less precise, a “photon counting system”. With modern technology it is possible to construct photon counting detector systems that can resolve details to a level of approximately 50 µm. However with such small pixels a problem will occur. In a semiconductor detector each absorbed X-ray photon creates a cloud of charge which contributes to the image. For high photon energies the size of the charge cloud is comparable to 50 µm and might be distributed between several pixels in the image. Charge sharing is a key problem since, not only is the resolution degenerated, but it also destroys the “colour” information in the image. This thesis presents characterisation and simulations to provide a detailed understanding of the physical processes concerning charge sharing in detectors from the MEDIPIX collaboration. Charge summing schemes utilising pixel to pixel communications are proposed. Charge sharing can also be suppressed by introducing 3D-detector structures. In the next generation of the MEDIPIX system, Medipix3, charge summing will be implemented. This system, equipped with a 3D-silicon detector, or a thin planar high-Z detector of good quality, has the potential to become a commercial product for medical imaging. This would be beneficial to the public health within the entire European Union. / Denna avhandling berör utveckling och karaktärisering av fotonräknande röntgensystem. ”Färgröntgen” öppnar nya perspektiv för medicinsk röntgendiagnostik och även för materialröntgen inom industrin. Skillnaden i absorption av olika ”färger” kan användas för att särskilja olika material i ett objekt. Färginformationen kan till exempel användas i sjukvården för att identifiera benskörhet. Färgen på röntgenfotonen kan identifieras om detektorsystemet kan detektera varje foton individuellt. Sådana detektorsystem kallas ”fotonräknande” system. Med modern teknik är det möjligt att konstruera fotonräknande detektorsystem som kan urskilja detaljer ner till en upplösning på circa 50 µm. Med så små pixlar kommer ett problem att uppstå. I en halvledardetektor ger varje absorberad foton upphov till ett laddningsmoln som bidrar till den erhållna bilden. För höga fotonenergier är storleken på laddningsmolnet jämförbar med 50 µm och molnet kan därför fördelas över flera pixlar i bilden. Laddningsdelning är ett centralt problem delvis på grund av att bildens upplösning försämras, men framför allt för att färginformationen i bilden förstörs. Denna avhandling presenterar karaktärisering och simulering för att ge en mer detaljerad förståelse för fysikaliska processer som bidrar till laddningsdelning i detektorer från MEDIPIX-projekter. Designstrategier för summering av laddning genom kommunikation från pixel till pixel föreslås. Laddningsdelning kan också begränsas genom att introducera detektorkonstruktioner i 3D-struktur. I nästa generation av MEDIPIX-systemet, Medipix3, kommer summering av laddning att vara implementerat. Detta system, utrustat med en 3D-detektor i kisel, eller en tunn plan detektor av högabsorberande material med god kvalitet, har potentialen att kunna kommersialiseras för medicinska röntgensystem. Detta skulle bidra till bättre folkhälsa inom hela Europeiska Unionen.

La condensation de Bose-Einstein est prédite par Einstein en 1925 pour des particules indiscernables de spin entier, les bosons. Il s'agit d'une transition de phase vers un état quantique de cohérence macroscopique, dont la température critique dépend directement de la masse des particules. Ce n'est qu'en 1995 qu'un condensat a pu être formé en phase gazeuse en refroidissant des atomes alcalins à la température ultra-basse de 10−6 degré Kelvin, provoquant ainsi une explosion d'activités de recherche dans le monde sur le sujet. Concernant la phase solide, les excitons dans les semi-conducteurs sont<br />considérés comme le candidat le plus prometteur pour la condensation de Bose-Einstein. En e_et leur masse est cent mille fois plus légère que celle des atomes alcalins, ce qui devrait permettre leur condensation<br />à une température voisine du degré Kelvin. Cependant malgré de nombreuses études depuis une trentaine d'années, aucune preuve convaincante de l'existence de condensat d'excitons n'avait été apportée à<br />ce jour. Récemment l'attention s'est portée sur les polaritons dans les microcavités semi-conductrices contenant des puits quantiques. Une microcavité semi-conductrice à puits quantiques est une hétérostructure<br />photonique destinée à exalter l'interaction matière-rayonnement entre les excitons con_nés dans le puits quantique et les photons con_nés dans la microcavité. Lorsque l'énergie de ces photons coïncide avec<br />celle des excitons, la microcavité peut entrer dans le régime de couplage fort d'oscillations de Rabi. Les nouveaux états propres du système (microcavité-puits quantique) sont appelés polaritons qui sont des états<br />mixtes exciton-photon. Par leur nature photonique, ces bosons possèdent une masse dix mille fois plus légère que celle des excitons, un avantage certain pour l'étude de la condensation de Bose-Einstein.<br />Nous avons observé l'occupation massive de l'état fondamental du polariton, qui se développe à partir d'un nuage de polaritons thermalisés à une température de (16-20) K. La formation du condensat est accompagn<br />ée par l'apparition spontanée de la cohérence temporelle et de la cohérence spatiale à longue portée, ainsi qu'une forte polarisation linéaire. La transition d'un état thermique à un état quantique est démontrée par des mesures de la fonction de corrélation d'ordre 2 en fonction de la densité des polaritons. L'ensemble de ces observations constitue la première évidence de la condensation de Bose-Einstein en phase solide.

Les matériaux de structure cubique blende de zinc sont piézo-électriques: une déformation de ces cristaux selon un axe polaire induit une polarisation électrique. Les puits quantiques contraints, de semi-conducteurs cubiques II-VI ou III-V, d'orientation [111] ou [211] présentent un champ électrique permanent de l'ordre de 100 kV/cm pour 1% de déformation. Ces structures sont particulièrement intéressantes pour la modulation optique, mais il est nécessaire d'étudier préalablement leurs propriétés spécifiques avant de pouvoir envisager de les utiliser dans des dispositifs optiques. Dans ce but, nous avons étudié par spectroscopie optique des puits contraints CdTe/CdMnTe ou CdTe/CdZnTe, élaborés par épitaxie par jets moléculaires, avec comme axe de croissance [111] ou [211]. Les résultats de spectroscopie ont été confrontés à une modélisation en termes de fonctions enveloppes prenant en compte les effets de contraintes biaxiales pour une direction de croissance [hhk]. De plus, nous avons développé une méthode originale de mesure du champ piézoélectrique dans les puits quantiques grâce à laquelle nous avons mis en évidence un effet piézo-électrique fortement non linéaire dans CdTe. Cet effet n'avait jamais été mentionné par ailleurs. Nous avons également mesuré l'évolution du coefficient piézo-électrique e14 CdTe avec une forte pression hydrostatique, jusqu'à des déformations d'environ 2% et montré qu'une part des non-linéarités provient d'un effet de volume. Enfin, nous avons étudié l'effet du champ piézo-électrique sur l'exciton. L'énergie de liaison de l'exciton est assez peu affectée, par contre, la force d'oscillateur décroît fortement pour la transition fondamentale du puits, avec le recouvrement des fonctions enveloppes d'électron et de trou. Notre modélisation de l'exciton, utilisant deux paramètres variationnels, fournit un calcul précis, sans paramètre ajustable, de l'absorption excitonique à travers un puits piézo-électrique: les calculs sont en très bon accord, sur près de deux ordres de grandeurs, avec les mesures d'absorption que nous avons réalisées sur une série d'échantillons de compositions variées.

Le travail présenté dans cette thèse s'inscrit dans le cadre de l'étude des propriétés des couches minces de matériaux semi-conducteurs à base de tellurure de cadmium CdTe. L'étude de l'influence de différents paramètres de dépôt sur les propriétés des couches minces de CdTe nous a permis de mettre au point une méthode de préparation d'un nouveau matériau à base de CdTe. Il s'agit du tellurure de cadmium amorphe oxygéné aCddTe:O. Le dépôt de couches minces de a-CdTe:O à partir d'une cible polycristalline de CdTe nécessite l'utilisation d'un plasma à haut pouvoir oxydant. Le plasma que nous avons utilisé est obtenu à partir d'un mélange d'argon Ar, de dioxygène et de diazote soumis à un champ électrique radiofréquence de 13,56 MHz. Nous avons montré que le diazote joue un rôle de catalyseur de l'oxydation de CdTe dans le plasma de déposition dont la composition détermine celle des couches minces de a-CdTe:O. En effet, la teneur en oxygène de ces couches peut avoisiner les 60 % lorsque les conditions d'oxydation sont poussées à l'extrême. Les propriétés optiques des couches minces de a-CdTe:O dépendent beaucoup de la teneur des couches en oxygène. C'est ainsi que l'énergie Eg du gap optique varie entre 1,45 eV et 1,85 eV pour une teneur en oxygène variant entre 0 et 40 % en pourcentage atomique. La valeur extrapolée à l'infrarouge de l'indice de réfraction de ces couches varie, quant à elle, entre 2,15 et 2,75. L'étude par XPS montre que l'oxygène incorporé dans les couches minces de a-CdTe:O se lie aussi bien aux atomes de tellure qu'à ceux de cadmium. En utilisant la réfléctométrie des rayons X, nous avons pu mettre en évidence l'influence du plasma oxydant précédent sur les couches minces de CdTe. Nous avons réussi ainsi à mettre au point une méthode qui permet de réduire considérablement la rugosité de surface des couches minces de CdTe. Lorsque l'on pousse à l'extrême les conditions d'oxydation, on peut obtenir des couches minces amorphes de l'oxyde stable CdTeO3. L'étude des propriétés électriques de ces couches permet de mettre en évidence leur caractère isolant. Nous avons pu ainsi déterminer leur résistivité électrique continue 3x10^6 ohm.m et leur constante diélectrique relative (16). Les mesures de transmission optique ont permis de déterminer leur énergie de gap optique Eg=3,91 eV ainsi que la valeur extrapolée à l'infrarouge de leur indice de réfraction (1,90). Des couches minces amorphes de CdTeO3 ont aussi été déposées sur CdTe en couche mince. Un recuit approprié des structures ainsi obtenues permet de faire croître du CdTeO3 polycristallin sur du CdTe polycristallin.

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The motivation of this thesis is to understand the physical properties of semiconductor quantum dots (QDs) and to get insight on the basic physics of charge separation in composites made from QDs with graphene oxide (GO)/organic semiconductors. The flexion phonon interactions is one of fundamental issues in solid state physics, which has a significant effect on both electrical and optical properties of solid state materials. This thesis investigates the physical properties of aqueous grown QDs through exciton-phonon coupling and non-radiative relaxation of excited carriers which have been carried out by temperature dependent photoluminescence spectroscopy. Several e orts have been made in order to understand the basic physics of photo induced charge separation in the hybrid systems made from QDs with graphene oxide and organic semiconductors. Investigations on the photoconductivity of the devices made from these hybrid composites have been carried out keeping the motive of its application in nanotechnology. This thesis work is presented in six chapters inclusive of summary and directions for future work. Chapter 1 discusses the background knowledge and information of the general properties of semiconductor nanostructures, QDs and their hybrid nanocomposites. Chapter 2 deals with the sample preparation and experimental techniques used in this thesis. Chapter 3 elaborates the exciton-phonon scattering and nonradiative relaxations of excited carriers in visible emitting cadmium telluride QDs with help of temperature and size dependent photoluminescence. Chapter 4 presents the investigations on time resolved photoluminescence dynamics and temperature dependent photoluminescence properties of near infrared (NIR) emitting mercury cadmium telluride (CdHgTe). Chapter 5 discusses the importance of NIR emitting silver sulphide (Ag2S) QDs and gives insight of nonradiative recombinations through defect/trap states. Chapter 6 investigates the excited state interactions between CdHgTe QDs and GO. Chapter 7 focuses on the understanding of basic physics of charge separation/transfer between poly (3hexylthiophene) and Ag2S QDs. Chapter 1: Semiconductor nanostructures have attracted significant scientific attention due to their fundamental physical properties and technological interests. Quasi zero dimensional nanocrystals or quantum dots (QDs) have shown unique optical and electrical properties compared to its bulk counterpart. These QDs show discrete energy levels due to the quantum confinement effect hence known as arti cial atoms. Large surface to volume ratio in these QDs is expected to play a crucial role in determing the photo-physical properties. Temperature dependent photoluminescence is a powerful tool for understanding the role of the large surface area on exciton recombination process in QDs. Inorganic QDs combined with different materials like graphene oxide or organic semiconductors forms an exciting class of synthetic materials which integrates the properties of organic and inorganic semiconductors. It is quite important to understand the basic physics of electronic interactions in these composites for its future application in many elds. Chapter 2: Synthesis of the inorganic QDs, graphene oxide, composites and fabrication of devices is an important and integral part of this thesis. Hydrothermal and three necked ask technique is adopted to get highly dispersible colloidal quantum dots in solvents. Synthesis of graphene oxide from graphite through oxidation and ultrasonication has been carried out to obtain homogenous dispersed graphene oxide in water. Structural properties have been studied by techniques like X ray diffraction, Raman spectroscopy, X ray photoelectron spectroscopy and high resolution transmission electron microscopy. Morphological properties are studied by atomic force microscopy and transmission electron microscopy. Optical properties are investigated by absorption spectroscopy, steady state and time resolved photoluminescence spectroscopy. Photoconductivity characteristics are analyzed to understand the basics of enhanced current in the various devices made from QDs composites. Chapter 3:Investigations on exciton phonon coupling and nonradiative relaxations in various sizes of visible light emitting cadmium telluride (CdTe) QDs size have been presented. Due to the large surface area, QDs are prone to have defect/trap states which can affect the exciton relaxation. Hence, understanding the role of such defect/trap states on photoluminescence is very essential for achieving the optimum optical properties. Temperature dependent (15 300 K) photoluminescence has been used to understand nonradiative relaxation of excited carriers. Thermally activated processes and multiple phonons scattering is thoroughly investigated to understand the quenching of photoluminescence with temperature. The strength of exciton-phonon coupling is investigated which determines the variation in energy bandgap of QDs with temperature. Role of exciton phonon scattering is also discussed to understand the basic physics of photoluminescence line width broadening in QDs. Chapter 4 and 5: This part of thesis focuses on the size and temperature pho-toluminescence properties of near infra red emitting ternary alloyed CdHgTe and Ag2S QDs. Near infrared emitting semiconductor quantum dots (QDs) have attracted significant scientific and technological interests due to their potential applications in the fields of photosensor, solar energy harvesting cells, telecommunication and biological tissue imaging etc. Structural and photophysical properties of CdHgTe QDs have been analyzed by high resolution transmission electron microscopy, X rayphotoelectron microscopy, photoluminescence decay kinetics and low temperature photoluminescence. Investigations on the nonradiative recombinations through trap/defects states and exciton phonon coupling are carried out in colloidal Ag 2S QDs which emits in the range of 1065 1260 nm. Particularly, the photoluminescence quenching mechanism with increasing temperature is analyzed in the presence of multiple nonradiative relaxation channels, where the excited carriers are thermally stimulated to the surface defect/trap states of QDs. Chapter 6 and 7: The aim of these chapters is to understand the basic physics of photo induced charge separation in the hybrid systems made from the inorganic QDs with graphene oxide and organic semiconductors. In chapter 6, CdHgTe QDs are decorated on graphene oxide sheets through physisorption. The excited state electronic interactions have been studied by optical and electrical characterizations in these CdHgTe QDs GO hybrid systems. In chapter 7, investigations are carried out for understanding the basic physics of charge separation in the composites of Ag2S QDs and poly (3hexylthiophene 2,5 diyl)(P3HT). These composites of inorganic organic materials are made by simple mixing with help of ultrasonication technique. Steady state and time resolved photoluminescence measurements are used as powerful technique to gain insight of energy/charge transfer process between P3HT and Ag2S QDs. Furthermore, investigations have been carried out on the photoconductivity of the devices made from these hybrid composites keeping the motive of its application in nanotechnology. Chapter 8: The conclusions of the work presented in this thesis are coherently summarized in this chapter. Thoughts and prospective for future directions are also summed up.

In this work, we have designed, simulated, fabricated and characterized homojunction Hg1-xCdxTe detector for high operating temperature in the MWIR region. The IR photon detectors need cryogenic cooling to suppress thermal generation. The temperature of operation in narrow gap semiconductor devices is limited by the noise due to statistical nature of thermal generation-recombination in narrow gap semiconductors. To make IR systems affordable they have to be operated without cooling or with minimal cooling compatible with low cost, low power and long life. Several fundamental and technological limitations to uncooled operation of photon detectors have been discussed in Chapter-1 of this thesis. Way and means adopted to increase the operating temperature, such as non-equilibrium operation, use of multilayer stacked hetero¬structures, optical immersion etc. have also been discussed. Key to improving the detector performance at any temperature is reduction of dark currents to level below the photocurrent and ultimately to the level where detector noise is determined by the fluctuations in photon flux from the scene (BLIP limit). In addition, design of present generation uncooled Hg1-xCdxTe infrared photon detectors relies on complex hetero-structures with a basic unit cell of type n+/π/p+. Theoretical modeling and numerical simulations on TLHJ device consisting of backside illuminated n+/π/p+ photodiodes have been performed. A numerical model for solving carrier transport equations for Hg1-xCdxTe infrared photodiodes was developed in MATLAB. Finite difference discretization of carrier transport equations and successive over relaxation method have been adopted. Numerical models are more appropriate than analytical models when analyzing multi-layer hetero-structures because we can account for realistic doping profiles, compositional grading and hetero-structures using this model. The model can be suitably modified to accommodate different device architectures, designs, material properties and operating temperature. Such a generalized model is useful to a device designer to customize the detector performance as per the availability of the material to suit the application specific requirements. The present work therefore proposes a more flexible, accurate and generalized methodology to accommodate the user needs by simulating the position dependence of carrier concentration, electrostatic potential and g-r rates and their effect on detector performance vis-à¬vis contact doping, absorber doping and absorber width on device performance. We detail aspects of our simulation model by developing a library of Hg1-xCdxTe properties using analytical and empirical expressions for material parameters (energy band gap, electron affinity, intrinsic carrier concentration, carrier effective mass, carrier mobility, dielectric constant and absorption coefficient). The PDEs were solved using the FDM coupled with SOR method. Behavior of Hg1-xCdxTe diodes (homo/hetero-junction) under different biasing, illumination and non equilibrium situations were modeled. Model has been validated for experimental measured data on n on p Hg1-xCdxTe photodiodes. The numerical computations are next applied to simulation/modeling of MWIR (λc=4.5 μm) n+/π/p+ TLHJ device for operation at T=250K. Several recombination processes occur in Hg1¬-xCdxTe depending on material quality, operating temperature, device design and processing conditions. Detailed mathematical models of radiative, Auger, Shockley Read Hall (SRH), surface recombination and optical g-r are analyzed and their effect on carrier lifetime have been evaluated. Analytical models for dark currents affecting the performance of Hg1-xCdxTe diodes at different temperatures are discussed. The mechanisms contributing to dark current are: (i) the thermal diffusion of minority carriers from the neutral regions (IDiff); (ii) generation-recombination from the space charge region of diode (IG-R) (iii) trap assisted tunneling currents, wherein the traps in the depletion region or the traps in the quasi neutral p region close to the depletion edge participate in the tunneling process(ITAT); (iii) band-to-band tunneling currents (IBTB) and (iv) surface leakage currents due to shunt resistance. Total current of a photodiode is ITOT=IDiff+IG-R+ITAT+IBTB+ISH-IP, where IP is the photocurrent. We evaluate the variation of electrostatic potential, carrier concentration, and electric field and g-r profiles as a function of position. The effect of variation in absorber width, doping and contact doping on D* is also analyzed. The mathematical models of different g-r processes (Auger, SRH, radiative, surface recombination and optical generation) affecting the device performance analyzed and their affect on carrier lifetimes are investigated. Responsivity ~3.25Amp-Watt-1, noise current~2pA/Hz1/2 and D* ~8x109 cmHz1/2watt-1 at 0.1V reverse bias have been calculated using optimized values of doping concentration, absorber width and carrier lifetime. The suitability of the method has been illustrated by demonstrating the feasibility of achieving the optimum device performance by carefully selecting the device design and other parameters. The numerical models provided insight about the operation and performance of Hg1-xCdxTe Auger-suppressed infrared photodiodes. Hetero-junction configuration increases the dynamic resistance, while the heavily doped contacts reduce the contact resistance. Wide gap/heavily doped contacts present a barrier to injection of minority carries into the absorber layer. At the same time they allow collection of minority carriers generated in the absorber region at the contacts. Hg1-xCdxTe hetero-diodes are grown by MOCVD and MBE with precise doping and compositional gradient control to reduce g-r contributions from defects and dislocations to the dark current in order to reap advantages of Auger suppression. Measured dark currents in hetero-junction photodiodes continue to be larger than expected in spite of the advancements in MBE technique. Delineation of an array on hetero-structures involves mesa separation of the diodes thus creating additional surface requiring passivation. Overall, the whole effort of fabricating a hetero Hg1-xCdxTe detector array is disproportionate to the overall gain in the performance. Therefore, we employ a much simpler fabrication process of homo-junction Hg1-xCdxTe detectors. It involves a planar device fabrication approach thus minimizing the surface passivation problem. We have deliberated upon the specific growth, characterization techniques and processing steps employed in our study. We discuss some of the experimental issues. We also presented results on the novel processing techniques developed that are potentially applicable to HOT technology and Hg1-xCdxTe technology in general. Hg1-xCdxTe (x=0.27-0.31) layer of ~ 15×15mm2 area and 15-20µm thickness is grown on CdZnTe substrate by Liquid Phase Epitaxy (LPE) in-house. As grown wafer is vacancy doped p-type with a carrier concentration of ~5×1015-1x1016 cm-3 and hole mobility of ~400cm2V-1s-1@80K. Planar n+/ν/p junction ~2-3µm deep is formed by B+ ion implantation and subsequent annealing; details are outlined in Chapter-4. Hall measurements and differential Hall measurements were used to find the carrier concentration, carrier mobility, resistivity of the wafer. The diodes are formed in the form of a 2D array along with various PEV’s for process characterization. Composition of Hg1-xCdxTe wafers used for the work is in the range of 0.27¬ 0.31 as determined by FTIR, corresponding to cutoff wavelength of 4.5-6.5µm. Junction depth and doping profile of the diodes after ion implantation was characterized by differential Hall technique. Transient minority carrier lifetime in fabricated MWIR n+/ν/p Hg1-xCdxTe (x=0.27) diodes were characterized using diode reverse-recovery technique. We prefer this method because it is a direct indicator of device as well as material quality post processing. By this time the device has undergone all the chemical/mechanical treatments and the measured lifetime is the cumulative of g-r mechanisms operative in bulk, space charge region and surface of diode. The value of lifetime extracted from the measured data lies in the range of 80-160ns. Variable temperature lifetime data was also extracted to determine the prevalent g-r process operative in the device. Diode dark I-V and junction C-V measurements were also made to correlate the observed behavior of the measured lifetime with g-r processes. Evidence of Auger suppression at room temperature is seen in the dark I-V characteristics via observation of negative differential resistance in the homo-junction Hg1-xCdxTe diodes. The experimental data is fitted using the numerical and analytical models developed. Based on this fitting, the current mechanisms limiting the dark current in these photodiodes are extracted. An improved analytical I-V model is reported by incorporating TAT and electric field enhanced Shockley-Read-Hall generation recombination process due to dislocations. Tunneling currents are fitted before and after the Auger suppression of carriers with energy level of trap (Et), trap density (Nt) and the doping concentrations of n+ and νregions as fitting parameters. Values of Et and Nt were determined as 0.78-0.80Eg and ~7-9×1014 cm-3 respectively in all cases. Doping concentration of νregion was found to exhibit non-equilibrium depletion from a value of 2×1016 to 4×1015 cm-3. Quantum efficiency of the diodes was found to ~25-30%. Note, that these are wafer level measurements on unpackaged device without backside AR coating. In addition to junction diodes, we present results on several PEV's such as VADA, MIS/MIM capacitors and TLM structures both at room and low temperature. Variable temperature measurements for a VADA tile and subsequent analysis provide evidence of g-r processes originating from defects, dislocations and dislocation loops, which are non-uniformly distributed across the Hg1-xCdxTe wafer and contributes to TAT current at high temperatures. MIS analysis yielded surface charge density lying between 3×1010-1×1011 cm-2 for ZnS/CdTe surface corresponding to a near flat band condition. Results of low and variable temperature measurements on the devices have also been shown to correlate it with the possibility of operating the device at mid temperatures such as 180-250K.

CdTe and CdZnTe are promising materials for room temperature semiconductor X-ray and gamma ray detectors. The accumulation of a space charge at deep energy levels due to a band bending at contacts with Schottky barriers and due to trapped photogenerated charge may result in time dependent change of charge collection efficiency in CdTe and CdZnTe detectors known as polarization effect. This thesis is mainly focused on a study of electric field profiles in detectors under dark and high photon flux conditions simulating detector operation using crossed polarizers technique exploiting the electro-optic (Pockels) effect. It also deals with a study of deep levels responsible for the polarization and influence of contact metals on charge accumulation. Several experimental results are supported by theoretical simulations. The measurements were performed on three sets of samples equipped with different contact metals (Au, In) cut from three different n-type CdTe and CdZnTe materials. Energy levels were detected using methods based on the Pockels effect and discharge current measurements. Detailed study of internal electric field profiles has revealed a fundamental influence of near midgap energy levels related to crystal defects and contact metals on the polarization in semiconductor detectors under high radiation...

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This work focuses on understanding the impact-initiated combustion of aluminum powder compacts. Aluminum is typically one of the components of intermetallic-forming structural energetic materials (SEMs), which have the desirable combination of rapid release of thermal energy and high yield strength. Aluminum powders of various sizes and different levels of mechanical pre-activation are investigated to determine their reactivity under uniaxial stress rod-on-anvil impact conditions, using a 7.62 mm gas gun. The compacts reveal light emission due to combustion upon impact at velocities greater than 170 m/s. Particle size and mechanical pre-activation influence the initiation of aluminum combustion reaction through particle-level processes such as localized friction, strain, and heating, as well as continuum-scale effects controlling the amount of energy required for compaction and deformation of the powder compact during uniaxial stress loading. Compacts composed of larger diameter aluminum particles (~70µm) are more sensitive to impact initiated combustion than those composed of smaller diameter particles. Additionally, mechanical pre-activation by high energy ball milling (HEBM) increases the propensity for reaction initiation. Direct imaging using high-speed framing and IR cameras reveals light emission and temperature rise during the compaction and deformation processes. Correlations of these images to meso-scale CTH simulations reveal that initiation of combustion reactions in aluminum powder compacts is closely tied to mesoscale processes, such as particle-particle interactions, pore collapse, and particle-level deformation. These particle level processes cannot be measured directly because traditional pressure and velocity sensors provide spatially averaged responses. In order to address this issue, quantum dots (QDs) are investigated as possible meso-scale pressure sensors for probing the shock response of heterogeneous materials directly. Impact experiments were conducted on a QD-polymer film using a laser driven flyer setup at the University of Illinois Urbana-Champaign (UIUC). Time-resolved spectroscopy was used to monitor the energy shift and intensity loss as a function of pressure over nanosecond time scales. Shock compression of a QD-PVA film results in an upward shift in energy (or a blueshift in the emission spectra) and a decrease in emission intensity. The magnitude of the shift in energy and the drop in intensity are a function of the shock pressure and can be used to track the particle scale differences in the shock pressure. The encouraging results illustrate the possible use of quantum dots as mesoscale diagnostics to probe the mechanisms involved in the impact initiation of combustion or intermetallic reactions.