581 |
CVD and ALD of Group IV- and V-Oxides for Dielectric ApplicationsForsgren, Katarina January 2001 (has links)
<p>Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO<sub>2</sub>, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta<sub>2</sub>O<sub>5</sub>, zirconium oxide, ZrO<sub>2</sub> and hafnium oxide, HfO<sub>2</sub>.</p><p>This thesis describes new chemical vapour deposition (CVD) and atomic layer deposition (ALD) processes for deposition of Ta<sub>2</sub>O<sub>5</sub>, ZrO<sub>2</sub> and HfO<sub>2</sub> using the metal iodides as starting materials. The layer-by-layer growth in ALD was also studied in real time with a quartz crystal microbalance (QCM) to examine the process characteristics and to find suitable parameters for film deposition.</p><p>All the processes presented here produced high-purity films at low deposition temperatures. It was also found that films deposited on Pt substrates generally crystallise at lower temperature, or with lower thickness, than on silicon and single-crystalline oxide substrates. Films grown on MgO(001) and α-Al<sub>2</sub>O<sub>3</sub>(001) substrates were strongly textured or epitaxial. For example, monoclinic HfO<sub>2</sub> deposited on MgO(001) were epitaxial for deposition temperatures of 400-500 C in ALD and 500-600 C in CVD. Electrical characterisation showed that the crystallinity of the films had a strong effect on the dielectric constant, except in cases of very thin films, where the dielectric constant was more dependent on layer thickness.</p>
|
582 |
Computational Material Design : Diluted Magnetic Semiconductors for SpintronicsHuang, Lunmei January 2007 (has links)
<p>The present thesis deals with the application of <i>ab-initio</i> electronic structure calculations based on density functional theory for material design.</p><p>The correlation between magnetic properties and electronic structures has been investigated in detail for diluted magnetic semiconductors (DMS), which have promising application for spintronics devices. The point defects, acting as electron donor or electron acceptor, have been studied for their key role in mediating the long ranged ferromagnetic interaction between transition metal (TM) ions. The electron holes induced by electron acceptor are completely spin polarized in semiconductor and exhibit a very significant efficiency to the ferromagnetic coupling between TM ions. While the electron donor shows a negative effect to the ferromagnetism in the system. The common trend of magnetic interaction and electron charge transfer between TM ions and electron acceptors or electron donators have been outlined. The Coulomb correlation <i>U</i> of <i>d</i> electrons, which could change the energy levels of TM <i>d</i> band respective to the host semiconductor band, also shows a significant influence on the magnetic behavior in DMS. </p><p>The crystallography phase transition under high pressure has also been studied for the iron doped with light element, carbon. Our calculated results show that interstitial carbon defect has little effect on the iron's bcc to hcp phase transition under high pressure. The other carbon iron phases, like Fe<sub>3</sub>C, has also been studied in a wide pressure range.</p><p>We also present a first-principles description on the temperature dependence of elastic constant for solids. The total temperature effects are approximated as a sum of two separated parts, the thermal expansion contribution, which gives the normal linearly decreasing effect on the elastic constant with increasing temperature, and the electronic band contribution, which could lead anomalous behavior for thermal elastic constants.</p>
|
583 |
An interpretive analysis of systems development methodology adaptation in South Africa / P.J. PietersePieterse, Petronella Johanna January 2006 (has links)
Thesis (M.Sc. (Computer Science))--North-West University, Potchefstroom Campus, 2007.
|
584 |
An Essay on Thomas Reid´s Philosophy of ScienceCallergård, Robert January 2006 (has links)
Though generally recognized as a formative force in his philosophy, Thomas Reid’s Newtonianism and his philosophy of science has not received due attention among scholars. My aim is to inaugurate a detailed survey. In ch. 1 it is shown that Reid demarcates physics as against metaphysics and theology, making his brand of Newtonianism different from first generation moral and religious Newtonianism. In ch. 2 it is argued that "Newtonian" is not an apt label on Reid’s call for a Science of the human mind. Neither his practice within the field, nor his methodological views, make lawlike connections the central kind of truth to be discovered. Ch. 3 is devoted to Reid’s account of the 1st and 2nd of Newton’s Regulae Philosophandi, and an ensuing notion of explanation which approaches the deductive-nomological model. It is shown that Reid’s account is very much his own, though presented as an explication of Newton’s intentions. Reid’s dismissive view towards simplicity as a guide in scientific reasoning leans on Bacon’s theory of idols and Reid’s theory of first principles of common sense. Ch 4 concerns hypotheses in connection with Newton’s phrase Hypotheses non fingo. It is argued that Reid does not mind speculation about unobservable or theoretical entities, and that his objections to particular ether theories are scientific rather than principled. Nonetheless, since Reid does not explain the difference between powerful conjecture and established truth, his notion of scientific reasoning remains elusive. Ch 5 concerns Reid’s views on the concept and ontology of forces of attraction. It is argued that Reid takes forces to be physical entities open for empirical enquiry, and that forces are neither active, nor efficient. Finally, Reid’s view of metaphysics is considered, and further differences with early Newtonians emphasised.
|
585 |
CVD and ALD of Group IV- and V-Oxides for Dielectric ApplicationsForsgren, Katarina January 2001 (has links)
Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO2, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta2O5, zirconium oxide, ZrO2 and hafnium oxide, HfO2. This thesis describes new chemical vapour deposition (CVD) and atomic layer deposition (ALD) processes for deposition of Ta2O5, ZrO2 and HfO2 using the metal iodides as starting materials. The layer-by-layer growth in ALD was also studied in real time with a quartz crystal microbalance (QCM) to examine the process characteristics and to find suitable parameters for film deposition. All the processes presented here produced high-purity films at low deposition temperatures. It was also found that films deposited on Pt substrates generally crystallise at lower temperature, or with lower thickness, than on silicon and single-crystalline oxide substrates. Films grown on MgO(001) and α-Al2O3(001) substrates were strongly textured or epitaxial. For example, monoclinic HfO2 deposited on MgO(001) were epitaxial for deposition temperatures of 400-500 C in ALD and 500-600 C in CVD. Electrical characterisation showed that the crystallinity of the films had a strong effect on the dielectric constant, except in cases of very thin films, where the dielectric constant was more dependent on layer thickness.
|
586 |
New Methods for Reducing Ground-Borne Noise in Buildings above Railway TunnelsHassan, Osama A. B. January 2003 (has links)
The rapid expansion of major cities in the west Europeancountries has accentuated the need to exploit every potentialsite for new establishments, e.g. areas over train tunnels andnear railway tracks in general. A significant impediment toexploit such areas is the structure-borne noise generated bythe train traffic, which is transmitted into buildings via theground. Reliable prediction methods and cost-effective noisecontrol measures are therefore needed and are also the objectof the present work. In this thesis, the studied buildings areconsidered as wave-guides for the sound transmitted from theground. The work is restricted to the case of hard ground suchas granite. The chosen technique permits comparison betweendifferent potential measures to reduce the transmission ofstructure-borne sound upward in buildings. It is shown that thedesign of the load-bearing structures is important in thiscontext, and a design with relocated columns has givenpromising results. It is also shown that the stiffness of theground plays an important role in the transmission process.This leads to the idea that a sand layer between the foundationof the building and the bedrock may reduce the transmission.New methods have thus been developed in the course of this workto evaluate the stiffness of the layer using approximate andexact techniques. Results are presented and a comparison ismade with previous results for a "normal" building and it isshown that the insertion of sand layer has a potential toconsiderably reduce the sound level in the building. <b>Keywords:</b>Ground-borne noise, railway noise, in-planewaves, wave-guides, scattering, propagation constant, inputmobility, elastic stratum, dual integral equations.
|
587 |
Computational Material Design : Diluted Magnetic Semiconductors for SpintronicsHuang, Lunmei January 2007 (has links)
The present thesis deals with the application of ab-initio electronic structure calculations based on density functional theory for material design. The correlation between magnetic properties and electronic structures has been investigated in detail for diluted magnetic semiconductors (DMS), which have promising application for spintronics devices. The point defects, acting as electron donor or electron acceptor, have been studied for their key role in mediating the long ranged ferromagnetic interaction between transition metal (TM) ions. The electron holes induced by electron acceptor are completely spin polarized in semiconductor and exhibit a very significant efficiency to the ferromagnetic coupling between TM ions. While the electron donor shows a negative effect to the ferromagnetism in the system. The common trend of magnetic interaction and electron charge transfer between TM ions and electron acceptors or electron donators have been outlined. The Coulomb correlation U of d electrons, which could change the energy levels of TM d band respective to the host semiconductor band, also shows a significant influence on the magnetic behavior in DMS. The crystallography phase transition under high pressure has also been studied for the iron doped with light element, carbon. Our calculated results show that interstitial carbon defect has little effect on the iron's bcc to hcp phase transition under high pressure. The other carbon iron phases, like Fe3C, has also been studied in a wide pressure range. We also present a first-principles description on the temperature dependence of elastic constant for solids. The total temperature effects are approximated as a sum of two separated parts, the thermal expansion contribution, which gives the normal linearly decreasing effect on the elastic constant with increasing temperature, and the electronic band contribution, which could lead anomalous behavior for thermal elastic constants.
|
588 |
A Numerical Forced Convection Heat Transfer Analysis Of Nanofluids Considering Performance CriteriaKirez, Oguz 01 November 2012 (has links) (PDF)
A nanofluid is a new heat transfer fluid produced by mixing a base fluid and solid nano sized particles. This fluid has great potential in heat transfer applications, because of its increased thermal conductivity and even increased Nusselt number due to higher thermal conductivity, Brownian motion of nanoparticles, and other various effects on heat transfer phenomenon.
In this work, the first aim is to predict convective heat transfer of nanofluids. A numerical code is created and run to obtain results in a pipe with two different boundary conditions, constant wall temperature and constant wall heat flux. The results for laminar flow for thermally developing region in a pipe are obtained for Al2O3/water nanofluid with different volumetric fraction and particle sizes with local temperature dependent conductivity approach. Various effects that influence nanofluid heat transfer enhancement are investigated. As a result, a better heat transfer performance is obtained for all cases, compared to pure water. The important parameters that have impact on nanofluid heat transfer are particle diameter of the nanoparticles, nanoparticle volumetric fraction, Peclet number, and viscous dissipation.
Next, a heat transfer performance evaluation methodology is proposed considering increased pumping power of nanofluids. Two different criteria are selected for two boundary conditions at constant pumping power. These are heat transfer rate ratio of the nanofluid and the base fluid for constant wall temperature boundary condition and difference between wall temperature of the pipe at the exit and inlet mean temperature of the fluid ratio for constant wall heat flux case. Three important parameters that influence the heat transfer performance of nanofluids are extracted from a parametric study. Lastly, optimum particle size and volumetric fraction values are obtained depending on Graetz number, Nusselt number, heat transfer fluid temperature, and nanofluid type.
|
589 |
A Numerical Forced Convection Heat Transfer Analysis Of Nanofluids Considering Performance CriteriaKirez, Oguz 01 November 2012 (has links) (PDF)
A nanofluid is a new heat transfer fluid produced by mixing a base fluid and solid nano sized particles. This fluid has great potential in heat transfer applications, because of its increased thermal conductivity and even increased Nusselt number due to higher thermal conductivity, Brownian motion of nanoparticles, and other various effects on heat transfer phenomenon.
In this work, the first aim is to predict convective heat transfer of nanofluids. A numerical code is created and run to obtain results in a pipe with two different boundary conditions, constant wall temperature and constant wall heat flux. The results for laminar flow for thermally developing region in a pipe are obtained for Al2O3/water nanofluid with different volumetric fraction and particle sizes with local temperature dependent conductivity approach. Various effects that influence nanofluid heat transfer enhancement are investigated. As a result, a better heat transfer performance is obtained for all cases, compared to pure water. The important parameters that have impact on nanofluid heat transfer are particle diameter of the nanoparticles, nanoparticle volumetric fraction, Peclet number, and viscous dissipation.
Next, a heat transfer performance evaluation methodology is proposed considering increased pumping power of nanofluids. Two different criteria are selected for two boundary conditions at constant pumping power. These are heat transfer rate ratio of the nanofluid and the base fluid for constant wall temperature boundary condition and difference between wall temperature of the pipe at the exit and inlet mean temperature of the fluid ratio for constant wall heat flux case. Three important parameters that influence the heat transfer performance of nanofluids are extracted from a parametric study. Lastly, optimum particle size and volumetric fraction values are obtained depending on Graetz number, Nusselt number, heat transfer fluid temperature, and nanofluid type.
|
590 |
Automorphic L-functions and their applications to Number TheoryCho, Jaehyun 21 August 2012 (has links)
The main part of the thesis is applications of the Strong Artin conjecture to number theory. We have two applications. One is generating number fields with extreme class numbers. The other is generating extreme positive and negative values of Euler-Kronecker constants.
For a given number field $K$ of degree $n$, let $\widehat{K}$ be the normal closure of $K$ with $Gal(\widehat{K}/\Bbb Q)=G.$ Let $Gal(\widehat{K}/K)=H$ for some subgroup $H$ of $G$. Then,
$$
L(s,\rho,\widehat{K}/\Bbb Q)=\frac{\zeta_K(s)}{\zeta(s)}
$$
where $Ind_H^G1_H = 1_G + \rho$.
When $L(s,\rho)$ is an entire function and has a zero-free region $[\alpha,1] \times [-(\log N)^2, (\log N)^2]$ where $N$ is the conductor of $L(s,\rho)$, we can estimate $\log L(1,\rho)$ and $\frac{L'}{L}(1,\rho)$ as a sum over small primes:
$$
\log L(1,\rho) = \sum_{p\leq(\log N)^{k}}\lambda(p)p^{-1} + O_{l,k,\alpha}(1)$$
$$
\frac{L'}{L}(1,\rho)=-\sum_{p\leq x} \frac{\lambda(p) \log{p}}{p} +O_{l,x,\alpha}(1).
$$
where $0 < k < \frac{16}{1-\alpha}$ and $(\log N)^{\frac{16}{1-\alpha}} \leq x \leq N^{\frac{1}{4}}$. With these approximations, we can study extreme values of class numbers and Euler-Kronecker constants.
Let $\frak{K}$ $(n,G,r_1,r_2)$ be the set of number fields of degree $n$ with signature $(r_1,r_2)$ whose normal closures are Galois $G$ extension over $\Bbb Q$. Let $f(x,t) \in \Bbb Z[t][x]$ be a parametric polynomial whose splitting field over $\Bbb Q (t)$ is a regular $G$ extension. By Cohen's theorem, most specialization $t\in \Bbb Z$ corresponds to a number field $K_t$ in $\frak{K}$ $(n,G,r_1,r_2)$ with signature $(r_1,r_2)$ and hence we have a family of Artin L-functions $L(s,\rho,t)$. By counting zeros of L-functions over this family, we can obtain L-functions with the zero-free region above.
In Chapter 1, we collect the known cases for the Strong Artin conjecture and prove it for the cases of $G=A_4$ and $S_4$. We explain how to obtain the approximations of $\log (1,\rho)$ and $\frac{L'}{L}(1,\rho)$ as a sum over small primes in detail. We review the theorem of Kowalski-Michel on counting zeros of automorphic L-functions in a family.
In Chapter 2, we exhibit many parametric polynomials giving rise to regular extensions. They contain the cases when $G=C_n,$ $3\leq n \leq 6$, $D_n$, $3\leq n \leq 5$, $A_4, A_5, S_4, S_5$ and $S_n$, $n \geq 2$.
In Chapter 3, we construct number fields with extreme class numbers using the parametric polynomials in Chapter 2.
In Chapter 4, We construct number fields with extreme Euler-Kronecker constants also using the parametric polynomials in Chapter 2.
In Chapter 5, we state the refinement of Weil's theorem on rational points of algebraic curves and prove it.
The second topic in the thesis is about simple zeros of Maass L-functions. We consider a Hecke Maass form $f$ for $SL(2,\Bbb Z)$. In Chapter 6, we show that if the L-function $L(s,f)$ has a non-trivial simple zero, it has infinitely many simple zeros. This result is an extension of the result of Conrey and Ghosh.
|
Page generated in 0.1743 seconds