O objetivo deste trabalho foi de estudar processos de transporte eletrônico em dispositivos a base de semicondutores orgânicos através de técnicas avançadas, como ressonância magnética detectada eletricamente (RMDE) e espectroscopia de impedância elétrica em corrente alternada. Além destas, medidas de ressonância paramagnética eletrônica (RPE) convencional também foram realizadas de forma a complementar as medidas de RMDE. Os dispositivos e materiais estudados foram: (hole-only e PLED) de MEH-PPV, polianilina e OLED multicamadas de Alq3 e -NPD. A técnica de RMDE mede a variação de condutividade da amostra na condição de ressonância magnética, permitindo relacionar processos microscópicos com os seus efeitos nos processos de transporte eletrônico. Os estudos de RPE e RMDE em polianilina mostraram uma transição entre os tipos de spin observados em função da temperatura. Os resultados obtidos indicam que o sinal de RPE se deve principalmente a estados de superfície, enquanto a técnica de RMDE permite observarmos também estados do volume, dependendo da forma de preparação dos dispositivos e dos parâmetros utilizados nas medidas. O sinal de RMDE foi atribuído ao hopping de pólarons intercadeias poliméricas. Nos dispositivos de MEH-PPV, o sinal de RMDE apresenta duas componentes, uma foi atribuída à fusão de pólarons negativos para formar bipólarons negativos e a outra foi atribuída à fusão de pólarons positivos. A deficiência na emissão de luz de alguns dos PLEDs estudados foi atribuída ao desbalanceamento de injeção de cargas, que pode ser observado pela diferença de intensidade entre as componentes do sinal. Nos OLEDs a base de Alq3, medidas de espectroscopia de impedância elétrica em função da voltagem dc (Vdc) mostraram um acúmulo de cargas nas interfaces internas do dispositivo, em baixas tensões. Entretanto, para valores mais altos de Vdc, quando começa o processo de recombinação, foi observado um fenômeno pouco estudado na literatura, conhecido como capacitância negativa. Possíveis abordagens a este problema foram propostas / The subject of this work is the investigation of electronic transport processes in organic semiconductors based devices using advanced techniques, such as electrically detected magnetic resonance (EDMR) and ac electrical impedance spectroscopy. Electron Paramagnetic Resonance (EPR) measurements were also carried out to complement the EDMR results. The studied devices and materials were: MEH-PPV hole-only devices and PLEDs, polyaniline and multilayer Alq3 and -NPD based OLEDs. EDMR measures the sample conductivity variation during magnetic resonance condition, which allows relating microscopic processes to its effects on electronic transport processes. EPR and EDMR investigations on polyaniline showed a transition between two kinds of observed spins as a function of temperature. The results indicate that EPR probes especially surface paramagnetic states, while EDMR allows observing both surface and bulk paramagnetic states, depending on how devices are prepared and on some measurement parameters. The EDMR signal was assigned to interchain hopping of pólarons. On MEH-PPV devices, the EDMR signal was composed of two lines, one was attributed to negative pólarons fusion to form negative bipólarons and the other was assigned to positive pólarons fusion. The light emitting deficiency presented by some of the PLEDs investigated was assigned to a misbalanced charge injection, what could be observed by the difference between the intensity of the two components. Impedance spectroscopy measurements on Alq3 based OLEDs as a function of the dc voltage (Vdc) showed charge accumulation at the inner interfaces of the device at low Vdc values. However, at higher Vdc values, when recombination starts to take place, a strange phenomenon, usually called negative capacitance, was observed. Possible approaches were proposed

O objetivo deste trabalho foi de estudar processos de transporte eletrônico em dispositivos a base de semicondutores orgânicos através de técnicas avançadas, como ressonância magnética detectada eletricamente (RMDE) e espectroscopia de impedância elétrica em corrente alternada. Além destas, medidas de ressonância paramagnética eletrônica (RPE) convencional também foram realizadas de forma a complementar as medidas de RMDE. Os dispositivos e materiais estudados foram: (hole-only e PLED) de MEH-PPV, polianilina e OLED multicamadas de Alq3 e -NPD. A técnica de RMDE mede a variação de condutividade da amostra na condição de ressonância magnética, permitindo relacionar processos microscópicos com os seus efeitos nos processos de transporte eletrônico. Os estudos de RPE e RMDE em polianilina mostraram uma transição entre os tipos de spin observados em função da temperatura. Os resultados obtidos indicam que o sinal de RPE se deve principalmente a estados de superfície, enquanto a técnica de RMDE permite observarmos também estados do volume, dependendo da forma de preparação dos dispositivos e dos parâmetros utilizados nas medidas. O sinal de RMDE foi atribuído ao hopping de pólarons intercadeias poliméricas. Nos dispositivos de MEH-PPV, o sinal de RMDE apresenta duas componentes, uma foi atribuída à fusão de pólarons negativos para formar bipólarons negativos e a outra foi atribuída à fusão de pólarons positivos. A deficiência na emissão de luz de alguns dos PLEDs estudados foi atribuída ao desbalanceamento de injeção de cargas, que pode ser observado pela diferença de intensidade entre as componentes do sinal. Nos OLEDs a base de Alq3, medidas de espectroscopia de impedância elétrica em função da voltagem dc (Vdc) mostraram um acúmulo de cargas nas interfaces internas do dispositivo, em baixas tensões. Entretanto, para valores mais altos de Vdc, quando começa o processo de recombinação, foi observado um fenômeno pouco estudado na literatura, conhecido como capacitância negativa. Possíveis abordagens a este problema foram propostas / The subject of this work is the investigation of electronic transport processes in organic semiconductors based devices using advanced techniques, such as electrically detected magnetic resonance (EDMR) and ac electrical impedance spectroscopy. Electron Paramagnetic Resonance (EPR) measurements were also carried out to complement the EDMR results. The studied devices and materials were: MEH-PPV hole-only devices and PLEDs, polyaniline and multilayer Alq3 and -NPD based OLEDs. EDMR measures the sample conductivity variation during magnetic resonance condition, which allows relating microscopic processes to its effects on electronic transport processes. EPR and EDMR investigations on polyaniline showed a transition between two kinds of observed spins as a function of temperature. The results indicate that EPR probes especially surface paramagnetic states, while EDMR allows observing both surface and bulk paramagnetic states, depending on how devices are prepared and on some measurement parameters. The EDMR signal was assigned to interchain hopping of pólarons. On MEH-PPV devices, the EDMR signal was composed of two lines, one was attributed to negative pólarons fusion to form negative bipólarons and the other was assigned to positive pólarons fusion. The light emitting deficiency presented by some of the PLEDs investigated was assigned to a misbalanced charge injection, what could be observed by the difference between the intensity of the two components. Impedance spectroscopy measurements on Alq3 based OLEDs as a function of the dc voltage (Vdc) showed charge accumulation at the inner interfaces of the device at low Vdc values. However, at higher Vdc values, when recombination starts to take place, a strange phenomenon, usually called negative capacitance, was observed. Possible approaches were proposed

Electrically detected magnetic resonance (EDMR) is a sensitive spectroscopic technique, which can be used to readout few to single electron spins in semiconductor and carbon nanodevices for applications in solid state quantum information processing (QIP). Since only electrically active defects contribute to the EDMR signal, this technique can be used further to investigate defects and impurities in photovoltaic devices, in which they limit the sunlight-to-energy conversion efficiency significantly. Here, I employ X-band EDMR for semiconductor defect analysis and identify the most important recombination centres in Czochralski silicon with oxide precipitates, which can be intentionally grown to confine detrimental metallic impurities to inactive regions of the wafer in order to serve as a defect-free substrate for modern silicon photovoltaic devices. Those experiments show that oxide precipitation is accompanied by the formation of silicon dangling bonds. Furthermore, I describe a very promising route towards the fabrication and readout of few to single electron spins in carbon nanotube devices, which can be characterised structurally via transmission electron microscopy in order to relate their electrical and spin properties with their structure. Finally, I employ EDMR to read out electron spin states in donor-doped silicon field-effect transistors as a prerequisite for their application in QIP. I report on a novel cryogenic probe head for EDMR experiments in resonant microwave cavities operating at 0.35 T (9.7 GHz, X-band) and 3.34 T (94 GHz, W-band). This approach overcomes the inherent limitations of conventional X-band EDMR and permits the investigation of paramagnetic states with a higher spectroscopic resolution and signal intensity. Both advantages are demonstrated and discussed. I further report on a novel mechanism giving rise to the EDMR effect in donor-doped silicon field-effect transistors, which is capable of explaining why the EDMR signal intensities of the conduction electrons are enhanced by a factor of ∼100, while the donor resonance signals increase by a factor of ∼20 from X- to W-band only. The spin-relaxation and dephasing times are extracted from a series of pulsed-EDMR measurements and confirm this model. The author gratefully acknowledges funding from Trinity College Oxford, Department of Materials, EPSRC DTA, and Konrad-Adenauer-Stiftung e.V. (Begabtenförderung).