This letter investigates the impact of self-heating on the post-cycling functionality of a scaled hafnium oxide-based ferroelectric field-effect transistor (FeFET). The full recovery of FeFET switching properties and data retention after the cycling endurance failure is reported. This is achieved by damage annealing through localized heating, which is intentionally induced by a large current flow through the drain (source)-body p-n junctions. The results highlight that the local thermal treatments could be exploited to extend the cycling endurance of FeFETs.