Title: Recombination centers in semiinsulating CdTe Author: Jakub Zázvorka Department / Institute: Institute of Physics of Charles University Supervisor of the master thesis: prof. Ing. Jan Franc, DrSc., Institute of Physics of Charles University Abstract: The properties of CdTe for application as a radiation detector are influenced through the presence of deep levels in the bang gap. These energy levels complicate the charge collection and the detector efficiency. Contactless resistivity mapping (COREMA) represents a good option for material characterization without the necessity of metal contacts application. The time-dependent charge measurement was investigated on an adjusted apparatus in FMF Freiburg. Theoretical model of charge transport based on band bending on the sample surface was proposed and a non-exponential behavior was calculated. Using this, the resulted parameter tendencies and their connection with deep level trap or recombination center were explained. A correlation was observed between resistivity, photoconductivity and a near midgap level photoluminescence. Parameter profiles were explained using the theory of Fermi level shift relative to the near midgap level. Three deep levels were observed on samples grown at the Charles University in Prague. Their photoluminescence supports the...

This thesis deals with two independent topics. The first is focused on the study of reversible covalent interactions of a carbonyl group with alcohols and water forming hemiacetals (respectively hydrate) derived from pyrazine trifluormethylketone. The main research method in this part is the NMR spectroscopy and experimental results are also supported by quantum chemical calculations. The second topic aims to the preparation and the study of photochemical properties of three dihydropyrazines which exhibit fluorescence both in solution and solid phase. The fluorescence can be influenced by means of complexation by various metal ions. Prepared dihydropyrazines also show interesting values of the Stokes shift. The structure of these new compounds was confirmed by X-ray analysis.

The presented thesis deals with preparation of GaN nanocrystals with a metal core. In the theoretical part of the thesis GaN with its properties and applications is introduced. Further, some of the preparation methods of GaN are presented, mainly focusing on MBE growth. Deposition of metal NPs from colloidal solution and the state of the art approaches to enhance luminescence of GaN based structures is discussed. The experimental part follows three steps of preparation of GaN crystals with the Ag core. In the first step the Ag NPs are deposited on the Si(111) substrate. In the second step the Ga deposition process is optimized and in the third step the deposited Ga is transformed into GaN. After the Ga deposition the samples were analyzed by SEM/EDX and SAM/AES. The properties of prepared GaN crystals with the Ag core were studied by XPS, photoluminescence and Raman spectroscopy.

The thesis is focused on the study of properties of GaN nanocrystals and Ga structures on the surface of silicon and graphene substrate. In the theoretical part of this thesis, the basic properties of Ga/GaN and graphene are described, as well as their applications or connection of both structures together in different devices. The ability of metal nanoparticles to enhance not only photoluminescence, due to the interaction of the material with surface plasmons, is also shown in several examples. The experimental part of the work first deals with the production and characterization of graphene sheets prepared by Chemical Vapor Deposition. Ga/GaN growth on both types of substrates was performed in a UHV chamber using an effusion cell for Ga deposition and an atomic ion source for nitridation. Prepared structures were characterized using various methods (XPS, SEM, AFM, Raman spectroscopy or photoluminescence). In the last step, GaN nanocrystals were coated with Ga islands to study the photoluminescence enhancement.

Title: Morfology and surface chemical composition of porous silicon prepared at various conditions Author: Bc. Martin KONEČNÝ Author's e-mail: konecmar@seznam.cz Department: Department of Chemical Physics and Optics Supervisor: Doc. RNDr. Juraj Dian, CSc. Supervisor's e-mail: Juraj.Dian@mff.cuni.cz Abstract: Porous silicon is a silicon-based material prepared mainly by anodic etching of crystalline silicon in hydrofluoric acid. Physical and chemical properties of porous silicon are governed by structures with sizes of the order of ones to tens of nanometers. Properties of nanostructure material are affected - as compared to macroscopic counterparts - by quantum confinement effect and enormous internal surface. According to type of silicon substrate (type of dopant, conductivity, crystallographic orientation) and technological conditions a material with different mean size of pores (macro-, meso- and nanoporous silicon) and surface chemical composition (different ratio of Si-O and Si-H bond) can be prepared. Morphology and surface chemical composition predestinated application potential of porous silicon for sensors of chemical species by taking advantage of strong sensitivity of physical properties of silicon nanocrystals - especially of photoluminescence - on the chemical state of a surface. Detection of...

Title: Photoluminescence of CdTe crystals Author: Jan Procházka Department: Institute of Physics of Charles University in Prague Supervisor: Doc. RNDr. Pavel Hlídek, CSc. Abstract: Energy levels connected with defects in nominally undoped crystals CdTe, indium- doped crystals and chlorine-doped crystals were studied using low-temperature photoluminescence. The crystals are intended for X- and gamma- ray detectors operated at room temperature. An effect of annealing in cadmium or tellurium vapor on luminescence spectra was investigated. Some changes were interpreted by filling of vacancies not only by atoms coming from gaseous phase but also by impurities from defects like interstitials, precipitates, inclusions, grain boundaries etc. The luminescence bands assigned to defects important for compensation mechanism were examined, namely A-centers (complexes of vacancy in cadmium sublattice and impurity shallow donor) and complexes of two donors bound to a vacancy. It was shown, that temperature dependence of the luminescence bands results from more complicated processes than a simple thermal escape of bound excitons or thermal excitation of electrons (holes) from defects to bands. We observed expressive "selective pair luminescence" bands (SPL) on partially compensated In-doped samples during sub-gap...

Tato diplomova prace se zabyva prpravou a charakterizac GaN nanokrystalu s kovovym jadrem. V teoreticke casti teto prace je predstaven material GaN se svymi vlastnos- tmi a aplikacemi. Dale jsou uvedeny substraty pro rust a jednotlive mechanismy rustu GaN nanokrystalu. V dalsm jsou popsany kovove nanocastice a jejich opticke vlastnosti umoznujc zesilovan fotoluminiscence na zaklade interakce plasmonu a GaN. Experi- mentaln cast se zabyva prpravou GaN nanokrystalu s Ag jadrem ve ctyrech krocch. Prvne jsou Ag nanocastice naneseny na substrat Si(111). Nasledne se nechaj zoxidovat. Tretm krokem je depozice Ga a poslednm je nitridace. Jednotlive kroky byly opti- malizovany a analyzovany ruznymi metodami, jako je XPS, SEM, fotoluminiscence a Ramanova spektroskopie.

The presented diploma thesis is focused on the preparation and properties of transparent polycrystalline ceramic materials based on Al2O3. Theoretically, the most important technological aspects of the processing of these materials are presented. Detailed attention is given to transparent Al2O3 polycrystalline ceramics doped with rare earth elements. The influence of microstructural parameters on the optical properties (represented by RIT) is investigated on Al2O3 samples doped and codoped with dysprosium, terbium and chromium. A significant effect of the average grain size on the light transmittance of all samples is observed. The highest RIT = 55 % (measured by a laser beam with a wavelength of 632,8 nm) was achieved by an optimized preparation process for a sample doped with 0,05 at. % of dysprosium. For all samples photoluminescent properties are also analysed. The photoluminescent emission spectra correspond to the activation of doping elements. In case of the terbium and chromium codoped samples, the differences in the activation of individual dopants depending on different excitation wavelengths were demonstrated, resulting in different colour emissions for different excitation wavelengths.

For Raman spectroscopy is a need to introduce a laser light into an optic fiber and analyze a collected light at the same time. Therefore it was proposed a specialized optical system. This system can also be used to measure other spectroscopy methods such as photoluminescence. In the theoretical part of this theses, was discussed both mentioned methods and their instrumentations. In addition to the Raman spectroscopy, was also shown some special cases of Raman spectroscopy for enhanced measurement of Raman scattering. The problem of weak signal detection and its reading is also discussed in the theoretical part of the thesis. In the practical part of this thesis was discussed the mechanical design of the optical system and the choice of optical elements that are used in the system. Next, is introduced the manufactured system, which design is based on the parameters of the chosen optical elements. The practical part of the thesis ends with an assembly and testing of the proposed system.

This work deals with measuring of very low temperatures during the detection defects of solar cells by photoluminescence method. Liquid nitrogen is used to cooling solar cells. Properties of liquid nitrogen and safety of handling are described in this work. Themperature in cryo area is measured by the thermocouple senzors. A main part of this work was to concept and creation of equipment for themperature controling in cryo technique. This equipment signalling danger scorch in low temperatures. The device was created to complement work place for the detection defects of solar cells by photoluminescence method.