No description available.

A method of extracting gallium from a Virginia feldspar has been determined. The steps in this method are: 1. Grinding of the ore to a very small particle size (200 mesh) 2. Extraction of gallium by “leaching” the ore with sodium hydroxide 3. Acidification of the sodium hydroxide solution with hydrochloric acid and subsequent extraction of the acid solution with ether to separate the gallium from aluminum, vanadium, and titatium, and other metals 4. Removal of iron by precipitation of ferrous sulphide with hydrogen sulphide 5. Precipitation of gallium by cupferron 6. Ignition of the cupferron precipitate to gallium oxide / M.S.

Recently, multiferroics-defined as materials with coexistence of at least two of the ferroelectric, ferroelastic and ferromagnetic effects-have attracted enormous research activities. In this thesis, the structure and properties of multiferrioic BiFeO3-x%PbTiO3 and Fe-x%Ga crystalline solutions were investigated. First, the results show that modified BiFeO3-PbTiO3 based ceramics have significantly enhanced multiferroic properties, relative to BiFeO3 single crystals. The data reveal: (i) a dramatic increase in the induced polarization; and (ii) the establishment of a remnant magnetization by a breaking of the translational invariance of a long-period cycloidal spin structure, via substituent effects. In addition, temperature dependent magnetic permeability investigations of BiFeO3-xPbTiO3 crystalline solutions have shown that aliovalent La substitution results in a significant increase in the permeability. Second, room temperature high-resolution neutron and x-ray diffraction studies have been performed on Fe-x%Ga crystals for 12<x<25at%. It has been observed that the structures of both Fe-12%Ga and Fe-25%Ga are tetragonal; however, near the phase boundary between them, an averaged-cubic structure was identified. In addition, an unusual splitting along the transverse direction indicates that the crystals are structurally inhomogeneous. / Master of Science

In this thesis, three primary findings are presented concernmg optolelectronic properties of AlGaN superlattices. First, we obtain the lowest lateral p-type resistivity and highest lateral p-type mobility to date in the AlGaN material system. Second, we obtain the first experimental results of multi-subband photoluminescence in p-type AlGaN superlattices. Last, we report the first direct measurement of perpendicular electrical transport ( electrical transport perpendicular to the superlattice planes) in AlGaN superlattices. Our research into resistivity and mobility of AlGaN superlattices stems from the fact that p-type AlGaN is highly resistive. To overcome the problem of highly resistive p-type AlGaN, we propose and demonstrate modulation doping in p-type AlGa superlattices. Our measurements yield a low-temperature lateral resistivity and mobility of 0.068 S1 • cm and 36 cm 2 /(V • s), respectively. This is the lowest resistivity and highest mobility recorded to date in p-type AlGaN and results from reduced ionized impurity scattering inherent in modulation doping. The optical properties of AlGaN superlattices are of great interest because they are often used in light-emitting diodes and laser diodes. Specifically, the absorption edge in AlGaN superlattices is typically thought of as being severely red-shifted due to internal electric fields present in AlGaN-based materials. We obtain experimental photoluminescence results on large-period superlattices that indicate that the redshifting of the absorption edge is much less than previously thought due to the combined effects of band-filling and oscillator strength on energy. We develop a computer model based on the self-consistent solution of the Poisson and Schrodinger system of equations. Our model predicts a drastic decrease in spontaneous recombination lifetime with increased transition energy, which is consistent with our experimental data. The perpendicular resistivity of AlGaN superlattices is also of critical importance to the development of AlGaN-based devices. We therefore measured the perpendicular resistivity of an n-type AlGaN superlattice and compared it to bulk n-type GaN. The superlattice has a perpendicular resistivity of 1.2 D • cm while bulk n-type GaN is 0.18 D • cm. We develop a theoretical model based on sequential tunneling and enhanced free carrier concentration to explain our experimental findings. Our model shows that perpendicular resistivity is dominated by two factors; carrier concentration and tunneling probability.

No description available.

Cette thèse s’inscrit dans le cadre d’une cotutelle internationale entre l’institut FEMTO-ST à Besançon en France et l’université de Sherbrooke au Canada. Elle porte sur l’élaboration d’un biocapteur, potentiellement à bas coût, pour la détection de pathogènes dans les secteurs de l’agroalimentaire, de l’environnement et de la biosécurité. Le modèle biologique visé est la bactérie Escherichia coli, dont les souches pathogènes sont responsables, chaque année et partout dans le monde, de plusieurs crises sanitaires liées à une mauvaise gestion des produits de consommation ou des installations de conditionnement ou de traitements de ces produits. L’utilisation de biocapteurs pour une détection rapide, sensible et sélective d’organismes pathogènes répond ainsi aux inquiétudes quant aux risques d’infection pour la population. La structure du capteur consiste en une fine membrane en arséniure de gallium (GaAs) vibrant sur des modes de cisaillement d’épaisseur générés par champ électrique latéral via les propriétés piézoélectriques du matériau. Nous montrons dans ce travail que le biocapteur offre également des possibilités de microfabrication, de biofonctionnalisation et de régénération intéressantes pour la conception d’un dispositif à bas coût. Le transducteur a été réalisé via des technologies de microfabrication utilisées en salle blanche avec une mise en parallèle des méthodes d’usinage par voie chimique et par plasma, l’objectif étant d’obtenir des membranes minces, planes et avec un état de surface de haute qualité. Une interface fluidique a été mise au point de façon à approvisionner de manière homogène le capteur en fluide. Par ailleurs, nos études se sont portées sur la fonctionnalisation biochimique de l’interface de bioreconnaissance sur l’arséniure de gallium et sa caractérisation fine par les techniques de spectroscopie infrarouge à transformée de Fourier (FTIR). Les résultats de cette étude ont permis de progresser sur la compréhension fondamentale du phénomène d’auto-assemblage de molécules sur GaAs. Un effort particulier a été mis en œuvre pour développer des biointerfaces de haute densité offrant une immobilisation optimale des immunorécepteurs biologiques. Parmi les différentes méthodes de régénération de la biointerface, le procédé de photo-oxydation UV en milieu liquide a démontré un fort potentiel pour des applications de capteurs réutilisables. Enfin, le transducteur a été caractérisé électriquement sous différents environnements. L’impact sur la réponse du résonateur des paramètres électriques, mécaniques et thermiques de ces milieux a été évalué afin de simuler le comportement du dispositif en condition réelle. / Abstract : This PhD thesis was realized in the context of a cotutelle program between FEMTO-ST institute in France and the University of Sherbrooke in Canada. The thesis addresses the development of a potentially low cost sensor dedicated for detection of pathogens in food industry processing, environment and biosafety sectors. Such a sensor could serve detection of Escherichia coli bacteria whose pathogenic strains are the source of foodborne illnesses encountered worldwide every year. Hence, biosensor devices are needed for a rapid, sensitive and selective detection of pathogens to avert, as soon as possible, any sources of contamination and prevent outbreak risks. The design of the sensor consists of a resonant membrane fabricated in gallium arsenide (GaAs) crystal that operates at shear modes of bulk acoustic waves generated by lateral field excitation. In addition to the attractive piezoelectric properties, as shown in this work, fabrication of a GaAs-based biosensor benefits from a well-developed technology of microfabrication of GaAs, as well as biofunctionalization and the possibility of regeneration that should result in cost savings of used devices. The transducer element was fabricated by using typical clean room microfabrication techniques. Plasma and wet etching were investigated and compared for achieving thin membranes with high quality surface morphology. At the same time, we designed and fabricated fluidic elements that allowed the construction of a flow cell chamber integrated in the sensor. Extensive research was carried out with a Fourier transform infrared spectroscopy (FTIR) diagnostic tool to determine optimum conditions for biofunctionalization of the GaAs surface. This activity allowed to advance the fundamental knowledge of self-assembly formation and, consequently, fabrication of high density biointerfaces for efficient immobilization of selected bioreceptors. Among different biochip regeneration methods, it has been demonstrated that liquid UV photooxidation (liquid-UVPO) has a great potential to deliver attractive surfaces for re-usable biochips. Finally, operation of the transducer device was evaluated in air environment and in various liquid media, simulating real conditions for detection.

A compact optical terahertz (THz) source was demonstrated based on an efficient high-repetition-rate doubly resonant optical parametric oscillator (OPO) around 2 mu m with two type-II phase-matched KTP crystals in the walk-off compensated configuration. The KTP OPO was intracavity pumped by an acousto-optical (AO) Q-switched Nd:YVO4 laser and emitted two tunable wavelengths near degeneracy. The tuning range extended continuously from 2.068 mu m to 2.191 mu m with a maximum output power of 3.29 W at 24 kHz, corresponding to an optical-optical conversion efficiency (from 808 nm to 2 mu m) of 20.69%. The stable pulsed dual-wavelength operation provided an ideal pump source for generating terahertz wave of micro-watt level by the difference frequency generation (DFG) method. A 7.84-mm-long periodically inverted quasi-phase-matched (QPM) GaAs crystal with 6 periods was used to generate a terahertz wave, the maximum voltage of 180 mV at 1.244 THz was acquired by a 4.2-K Si bolometer, corresponding to average output power of 0.6 mu W and DFG conversion efficiency of 4.32x10(-7). The acceptance bandwidth was found to be larger than 0.35 THz (FWHM). As to the 15-mm-long GaSe crystal used in the type-II collinear DFG, a tunable THz source ranging from 0.503 THz to 3.63 THz with the maximum output voltage of 268 mV at 1.65 THz had been achieved, and the corresponding average output power and DFG conversion efficiency were 0.9 mu W and 5.86x10(-7) respectively. This provides a potential practical palm-top tunable THz sources for portable applications.

In the past decade, GaN-based nitrides have had a considerable impact in solid state lighting and high speed high power devices. InGaN-based LEDs have been widely used for all types of displays in TVs, computers, cell phones, etc. More and more high power LEDs have also been introduced in general lighting market. Once widely used, such LEDs could lead to the decrease of worldwide electrical consumption for lighting by more than 50% and reduce total electricity consumption by > 10%. However, there are still challenges for current state-of-the art InGaN-based LEDs, including ‘efficiency droop’ issues that cause output power quenching at high current injection levels (> 100 A/cm2). In this dissertation, approaches were investigated to address the major issues related to state-of-the-art nitride LEDs, in particular related to (1) efficiency droop investigations on m-plane and c-plane LEDs: enhanced matrix elements in m-plane LEDs and smaller hole effective mass favors the hole transport across the active region so that m-plane LEDs exhibit 30% higher quantum efficiency and negligible efficiency droop at high injection levels compared to c-plane counterparts; (2) engineering of InGaN active layers for achieving high quantum efficiency and minimal efficiency droop: lower and thinner InGaN barrier enhance hole transport as well as improves the quantum efficiencies at injection levels; (3) double-heterostructure (DH) active regions: various thicknesses were also investigated in order to understand the electron and hole recombination mechanism. We also present that using multi-thin DH active regions is a superior approach to enhance the quantum efficiency compared with simply increasing the single DH thickness or the number of quantum wells (QWs, 2 nm-thick) in multi-QW (MQW) LED structures due to the better material quality and higher density of states. Additionally, increased thickness of stair-case electron injectors (SEIs) has been demonstrated to greatly mitigate electron overflow without sacrificing material quality of the active regions. Finally, approaches to enhance light extraction efficiency including using Ga doped ZnO as the p-GaN contact layer to improve light extraction as well as current spreading was introduced.

by Lam Siu Dan. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2001. / Includes bibliographical references (leaves 65-67). / Text in English; abstracts in English and Chinese. / by Lam Siu Dan. / Table of contents --- p.I / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Interest in GaAs1-xNx/GaAs alloy --- p.1 / Chapter 1.2 --- Interest in growing GaAs1-xNx/GaAs using different carrier gases --- p.4 / Chapter 1.3 --- Theoretical calculation of the band gap energy of GaAs1-xNx alloy --- p.4 / Chapter 1.4 --- Advantages of using photoluminescence (PL) --- p.7 / Chapter 1.5 --- Our work --- p.9 / Chapter Chapter 2 --- Experimental setup and procedures / Chapter 2.1 --- Growth conditions of GaAs1-xNx on (001) GaAs --- p.10 / Chapter 2.2 --- X-ray diffraction / Chapter 2.2.1 --- Setup --- p.12 / Chapter 2.2.2 --- Types of X-ray measurements --- p.12 / Chapter 2.3 --- PL measurements / Chapter 2.3.1 --- Setup --- p.14 / Chapter 2.3.2 --- Types of PL measurement --- p.16 / Chapter Chapter 3 --- Results and discussions / Chapter 3.1 --- X-ray diffraction of GaAs1-xNx/GaAs / Chapter 3.1.1 --- GaAs1-xNx/GaAs grown using H2 as carrier gas --- p.17 / Chapter 3.1.2 --- GaAs1-xNx/GaAs grown using N2 as carrier gas --- p.28 / Chapter 3.1.3 --- Peak widths of the X-ray rocking curves of GaAs1-xNx/GaAs --- p.30 / Chapter 3.2 --- Room temperature (RT) and 10K PL of GaAs1-xNx/GaAs / Chapter 3.2.1 --- The energy of the NBE peak of GaAs1-xNx/GaAs --- p.32 / Chapter 3.2.2 --- The width of the NBE peak of GaAs1-xNx/GaAs --- p.44 / Chapter 3.3 --- Excitation power density (EPD) dependent PL studies of GaAs1-xNx/GaAs / Chapter 3.3.1 --- The energy of the NBE peak of GaAs1-xNx/GaAs --- p.49 / Chapter 3.3.2 --- The width of the NBE peak of GaAs1-xNx/GaAs --- p.55 / Chapter 3.4 --- Temperature dependent PL studies of GaAs1-xNx/GaAs --- p.57 / Chapter Chapter 4 --- Conclusions --- p.62 / References --- p.63

La demande de compositions de verres adaptées pour des applications optiques dans le domaine spectral du proche infrarouge est en continuelle augmentation. Les verres à base d’oxyde de gallium constituent de bons candidats car ils permettent de combiner de bonnes stabilités thermiques et de fortes polarisabilités et hyperpolarisabilités. Cet oxyde présente également une faible énergie de phonon, ce qui présente un intérêt lorsqu’il est associé à d’autres oxydes lourds pour obtenir une large fenêtre de transparence jusqu’à 6μm dans l’infrarouge.L’étude présentée dans ce manuscrit regroupe les résultats expérimentaux autour de deux systèmes vitreux : x Ga2O3 – (1-x) NaPO3 avec x compris entre 0 et 30 mol% et Ga2O3-GeO2-Na2O-BaO.L’étude de l’introduction d’oxyde de gallium dans le métaphosphate de sodium a permis d’établir des corrélations entre la composition, la structure et les propriétés du verre résultant. La matrice vitreuse du système Ga2O3-NaPO3 permet également la formation de guides d’ondes par irradiation laser, ainsi que la formation de nanoréseaux.Dans les systèmes germanogallates de composition Ga2O3-GeO2-Na2O-BaO, la recherche par un plan d’expérience de compositions adaptées à la fabrication de fibres optiques avec un large domaine de transparence dans l’infrarouge a été entreprise. Les transmissions obtenues dans le proche infrarouge atteignent une longueur d’onde de coupure proche de 6 μm et une susceptibilité d’ordre trois cinq fois plus élevée que celle de la silice. Des fibres mono-indice de composition Ga42Ge28Na13Ba17 ont ainsi été obtenues. / The demand of glass compositions suitable for optical applications in the near infrared spectral region is in continuous increase. Glasses based on gallium oxide are good candidates since they can combine good thermal stability and high polarizability and hyperpolarizability. This oxide also has a low-phonon energy which is of interest when combined with other oxides to expand the transparency window up to 6 μm in the infrared.The study presented in this manuscript includes experimental results on two glassy systems: x Ga2O3 – (1-x) NaPO3 with x between 0 and 30 mol% and Ga2O3-GeO2-Na2O-BaO.The study of the gallium oxide’s introduction in sodium metaphosphate allowed establishing the correlation between composition, structure and properties of the resulting glasses. Such glassy matrix allows the formation of waveguides by laser irradiation, and the formation of nanogratings.In germanogallates systems Ga2O3-GeO2-Na2O-BaO, the search for compositions adapted to the manufacturing of optical fibers has been conducted thanks to a design of experience approach. The near infrared transmissions obtained attain a cutoff wavelength close to 6 microns and a third order susceptibility five times higher than that of silica. Mono-indices fibers with the composition Ga42Ge28Na13Ba17 were obtained.