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The Global ETD Search service is a free service for researchers
to find electronic theses and dissertations. This service is
provided by the
Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
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Showing 331 to 340 of 1258 (0.027 seconds)| 331 |
Wide band gap nanomaterials and their applicationsZhang, Shaolin, 張少林 January 2009 (has links)
published_or_final_version / Physics / Master / Master of Philosophy
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| 332 |
Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitrideCheng, Chung-choi., 鄭仲材. January 2009 (has links)
published_or_final_version / Physics / Doctoral / Doctor of Philosophy
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| 333 |
Chemical reactions at the interfaces of semiconductors and catalysts with solutions: I. Tin-palladium catalysts in electroless copper plating. II. Dissolution of crystalline gallium-arsenide in solutions containing complexing agents.Pierson, Bruce Gregory. January 1989 (has links)
The concentration of tin and palladium in catalysts used in electroless copper plating have been determined by Rutherford backscattering spectrometry with high energy (2-5) MeV ⁴He⁺. The tin:palladium ratio in the catalyst decreases when exposed to an alkaline solution. X-ray photoelectron spectroscopy has confirmed this result and has shown the palladium in the catalyst is present as palladium metal and the tin is present, probably as an oxidized species, to a depth of about 30 Å. Catalysts for the electroless plating of copper are obtained by the reaction of Pd(II) and Sn(II). The extent of the reaction and the concentrations of the reaction products depend on the solution conditions. Conflicting results obtained in previous investigations of tin-palladium catalysts can be explained on this basis. Single crystals of gallium arsenide (GaAs(100)) were found to dissolve in synthetic lung fluid (Gamble solution). The concentrations of arsenic and gallium in the Gamble solution as well as the arsenic:gallium ratio on the GaAs surface increased continuously as the time of exposure to the Gamble solution increased. X-ray photoelectron spectroscopic studies of the gallium arsenide surface showed that arsenic migrated to the surface and it was oxidized to a species resembling As₂O₃ and finally solubilized by the Gamble solution. The solubility of gallium was governed primarily by the formation of stable complexes with the citrate and phosphate ions in the Gamble solution. Zinc that was present in the single crystals of gallium arsenide also migrated to the surface.
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| 334 |
Dislocations in strained-layer semiconductor heterostructuresLiu, Xian Wei January 1999 (has links)
No description available.
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| 335 |
Electrical characteristics of silicon-doped gallium arsenide lateral P-N functionsGardner, Neil Robin January 1998 (has links)
No description available.
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| 336 |
Mechanisms of electrical interaction between isolated integrated GaAS devicesAkbari Boroumand, Farhad January 2000 (has links)
No description available.
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| 337 |
Spin dynamics of carriers in quantum wellsBritton, Robert Stanley January 1999 (has links)
No description available.
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| 338 |
An experimental study of Inâ†xGaâ†1â†-â†xAs/GaAs piezoelectric quantum wells and lasersKhoo, Eng Ann January 1999 (has links)
No description available.
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| 339 |
Electron spectroscopic studies of aluminium based precursors on GaAs and Si surfacesHill, Justin John January 1998 (has links)
No description available.
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| 340 |
Kinetic studies of GaAs growth and doping by molecular beam epitaxyTok, Eng Soon January 1998 (has links)
No description available.
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