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Recombination kinetics of isoelectronic trap in gallium nitride with phosphorusWang, Haitao January 2000 (has links)
No description available.
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Photoluminescence and kinetic of MOCVD grown P-type GaAs:Nd and Nd-implanted semi-insulating GaAsSaha, Uttam Kumar January 1996 (has links)
No description available.
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NBN-Doped Bis-Tetracene and Peri-Tetracene: Synthesis and CharacterizationFu, Yubin, Chang, Xiao, Yang, Huan, Dmitrieva, Evgenia, Gao, Yixuan, Ma, Ji, Huang, Li, Liu, Junzhi, Lu, Hongliang, Cheng, Zhihai, Du, Shixuan, Gao, Hong-Jun, Feng, Xinliang 17 May 2024 (has links)
Combining solution-based and surface-assisted synthesis, we demonstrate the first synthesis of NBN-doped bis-tetracene (NBN-BT) and peri-tetracene (NBN-PT). The chemical structures are clearly elucidated by high-resolution scanning tunneling microscopy (STM) in combination with noncontact atomic force microscopy (nc-AFM). Scanning tunneling spectroscopy (STS) characterizations reveal that NBN-BT and NBN-PT possess higher energy gaps than bis-tetracene and peri-tetracene. Interestingly, NBN-BT can undergo stepwise one-electron oxidation and convert into its corresponding radical cation and then to its dication. The energy gap of the NBN-BT dication is similar to that of bis-tetracene, indicating their isoelectronic relationship. Moreover, a similar energy gap between the NBN-PT dication and peri-tetracene can be predicted by DFT calculations. This work provides a novel synthesis along with characterizations of multi-NBN-doped zigzag-edged peri-acenes with tunable electronic properties.
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