Understanding the internal organization of the Lower Pleistocene 8 Sand reservoir in the Green Canyon 18 field, Gulf of Mexico, helps to increase knowledge of the geology and the petrophysical properties, and hence contribute to production management in the area. Interpretation of log data from 29 wells, core and production data served to detail as much as possible a geological model destined for a future reservoir simulation. Core data showed that the main facies resulting from fine-grained turbidity currents is composed of alternating sand and shale layers, whose extension is assumed to be large. They correspond to levee and overbank deposits that are usually associated to channel systems. The high porosity values, coming from unconsolidated sediment, were associated to high horizontal permeability but generally low kv/kh ratio. The location of channel deposits was not obvious but thickness maps suggested that two main systems, with a northwest-southeast direction, contributed to the 8 Sand formation deposition. These two systems were not active at the same time and one of them was probably eroded by overlying formations. Spatial relationships between them remained unclear. Shingled stacking of the channel deposits resulted from lateral migration of narrow, meandering leveed channels in the mid part of the turbidite system. Then salt tectonics tilted turbidite deposits and led to the actual structure of the reservoir. The sedimentary analysis allowed the discrimination of three facies A, B and E, with given porosity and permeability values, that corresponded to channel, levee and overbank deposits. They were used to populate the reservoir model. Well correlation helped figure out the extension of these facies.

La mise à niveau du détecteur CMS (Upgrade Phase-2) en 2024 prévoit l'installation de nouveaux détecteurs à plaques résistives (RPC) dans les 2 secteurs les plus externes et les plus vers l’avant (RE3/1 et RE4/1) des bouchons. Des RPC en verre de basse résistivité (GRPC) ont été proposées afin d'instrumenter ces secteurs où le flux de particules sera de l’ordre du kHz/cm², valeurs pour lesquelles les RPC actuelles de CMS ne sont pas efficaces. Cette thèse porte sur l'étude et la caractérisation de ces GRPC, de leur électronique de lecture associée et de leur résistance aux irradiations. Deux méthodes de production de chambres de taille moitié des chambres finales à partir de pavages de verres de taille maximale 32*30cm² ont été élaborées et testées. Un nouveau circuit électronique (PCB) à bandes de détection non segmentées en êta et lues par des puces dédiées (PETIROC2A) est également présenté. Il permet grâce à des chronomètres numériques (TDC) de 25 picosecondes de résolution, une précision de l'ordre du centimètre sur la mesure de la position du passage des particules le long des bandes. Cette thèse décrit ces nouveaux dispositifs et présente les résultats obtenus avec ceux-ci lors de tests en faisceaux auprès des accélérateurs PS et SPS du CERN ainsi qu'au Gamma Irradiation Facility (GIF++). Cette étude montre que le verre de basse résistivité, bien que supportant les flux de particules, n'est pas la meilleure solution pour l'environnement de CMS car il nécessite un mélange gazeux différent pour fonctionner. Cependant, la nouvelle électronique a prouvé son adéquation à cet environnement et est maintenant considérée comme l'option privilégiée pour la mise à niveau de CMS / The installation of new resistive plate chamber detectors (RPCs) in the 2 most remote sectors (RE3 / 1 and RE4 / 1) of the CMS End-Caps is planned during the Phase-2 CMS upgrade in 2024. Glass Resistive Plate Chambers (GRPC) with low resistivity glass as electrodes have been proposed to equip these sectors. These detectors should sustain these zones' particle rate. The aim of this Thesis is to study and characterise these detectors, their associated readout electronics and their behaviour under radiations.Two ways of building half size chambers by tesselation of glass plates with maximal size 32*30cm² have been developped. A new PCB with strips readout read by dedicated ASICs (PETIROC2A) without eta segmentation is also described. It allows, thanks to a 25 ns time-resolution TDC to estimate the particle crossing position on the strip with a resolution of the order of cm. This manuscript describes all these devices and discusses the devices' performance measured in beam tests done at the CERN PS and SPS accelerator and at the Gamma Irradiation Facility (GIF++). This study shows that the low resistivity glass, though able to sustain the particule rate, is not the best option for the CMS upgrade. On the contrary, the tested electronic has been proven to fit the CMS upgrade requirements and is now considered as the baseline of the CMS End-Caps RPC upgrade project

Induction heating has become a popular alternative to other heat sources for stovetop cooking applications due to performance, efficiency, control response, and safety. The main drawback is that extreme difficulty is encountered when trying to head low-resistivity, non-ferromagnetic metals such as aluminum and copper, which are commonly used for cookware in several societies. The lack of ferromagnetic properties, resulting in no hysteresis dissipation, and low resistivity of such metals results in an impractically low resistance reflected through the work coil. The resultant impedance complicates inverter design, as it is too low to be efficiently driven with conventional inverter topologies. The magnitudes of current involved in exciting this impedance also severely impact the efficiency of the coil and resonant components, requiring extreme care in coil design. This work explores various techniques that have been proposed and/or applied to efficiently heat low-resistivity cookware and the associated limitations. A transformer-coupled series-load-resonant topology driven by a full-bridge inverter is proposed as a means of efficiently heating aluminum cookware within practical design constraints. The experimental circuit is built and successfully tested at an output power of 1.66kW. The procedure of optimizing the work coil for improved efficiency is also presented along with the procedure of measuring coil efficiency. An improved circuit incorporating switch voltage detection to guarantee zero-voltage switching is then built in order to overcome limitations of this design. / Master of Science

O trabalho realizado nesta tese esteve apoiado em dois objetivos principais. O primeiro centrado na otimização das etapas e processos de fabricação de células solares de silício de alto rendimento envolvendo redução de custos. O segundo objetivo foi direcionado na implementação de células solares eficientes e não dependentes do armadilhamento de impurezas através da difusão de alumínio. Para levar a cabo estes objetivos de forma planejada, o trabalho dividiu-se em otimizações teóricas e implementações experimentais. As otimizações teóricas foram realizadas utilizando dois programas: um programa desenvolvido (simulacell.pas) e implementado no próprio LME (versão 2), e o outro adquirido comercialmente, PC1D. De acordo com os resultados obtidos em estruturas completas n+p e n++n+p foi possível concluir que tanto as estruturas formadas através de emissores homogêneos como as obtidas utilizando emissores duplamente difundidos permitem alcançar eficiências elevadas, 25,5% a 26,0%, respectivamente, em um amplo intervalo de espessuras e concentrações superficiais de dopantes. No que tange aos desenvolvimentos experimentais, este trabalho se inicia com o desenvolvimento de um processo simplificado de baixo custo, em células solares de silício Cz de baixa resistividade com estrutura n+pp+, tipo \"mesa\". Este processo simplificado também está baseado na difusão de fósforo e alumínio (P/Al), utilizando gases industriais e reagentes químicos de grau \"para análise\", como uma transposição do processo de fabricação anteriormente desenvolvido no LME-EPUSP em substratos de silício FZ utilizando tecnologia planar. A célula solar mais representativa do processo implementado, A-16-1, permitiu atingir eficiências no entorno de 17%. As implementações experimentais visaram inicialmente o desenvolvimento de um procedimento visando à qualificação de materiais de partida (silício), utilizando a técnica de decaimento fotocondutivo (PCD) através de dois procedimentos de passivação de superfícies; oxidações térmicas e difusões suaves de fósforo. Posteriormente, utilizando o sistema PCD, novas otimizações dos emissores de tipo n+ homogêneos e regiões de tipo p foram realizadas, seguidos por oxidações térmicas passivadoras hidrogenadas, preservando-se o tempo de vida do volume em valores elevados (aproximadamente 1ms, após a realização de todas as etapas térmicas). Estes resultados qualificam o silício e os materiais de consumo utilizados, assim como, o novo processo de fabricação desenvolvido. Esta técnica também permitiu qualificar os emissores com perfil Gaussianos processados, atingindo valores da ordem de 45fA/cm2 para densidades de recombinação em estruturas n+pn+. Desenvolveram-se também estruturas n+p em materiais Cz de baixa resistividade 2-3W.cm de dois diferentes fabricantes, e silício FZ com 0,5W.cm. Pôde ser comprovada a qualidade das etapas que compõem o processo completo otimizado tendo-se obtido tensões de circuito aberto-implícitas de 652,4mV (Si-Cz fabricante 1) e 662,6mV (Si-Cz fabricante 2), e 670,8mV (FZ). De acordo com simulações realizadas utilizando parâmetros habituais de dispositivos do próprio LME, estas tensões, quando associadas a um conjunto óptico frontal típico das células solares de alto rendimento do LME (texturização química aleatória e filme de SiO2), permitirão atingir valores entre 19% - 20%. Entretanto, utilizando texturização e camada dupla torna-se plausível atingir o marco de 21% de rendimento, ultrapassando assim a barreira dos 17% (recorde nacional), e comprovando a potencialidade da infra-estrutura deste laboratório para o desenvolvimento de células solares não dependentes do efeito do armadilhamento de impurezas através da difusão de alumínio. / The work developed at this thesis has been based on two main objectives. First, it was focused on the optimization of the steps and processes for the fabrication of high efficiency solar cells, reducing production costs. The latter objective was directed to develop solar cells that were efficient and non-dependent on impurities gettering performed through the aluminum diffusion. In order to attend the planned objectives the work was divided into the theoretical objectives and experimental developments. The theoretical optimizations were performed using two different program codes: one was developed at LME (simulacell.pas), being upgraded afterwards (version 2); and the other was acquired commercially, the PC1D. According to the obtained results in complete structures n+p and n++n+p, it was possible to conclude that the homogeneous and double diffused emitter structures can provide high efficiencies, from 25,5% to 26,0%, respectively, for a wide range of thicknesses and surface doping levels. Concerning the experimental developments, this work starts with a low cost simplified process, using Cz silicon solar cells with low base resistivity and the structure n+pp+, \"mesa\" type. This simplified process was also based on the phosphorus/ aluminum diffusion (P/Al), using industrial gases and for analysis grade chemical reagents, as a fabrication process transposition of the process previously developed at LME-EPUSP using silicon substrates with planar technology. The most representative solar cells of the implemented process, A-16-1, provided about a 17% efficiency. The experimental implementations aimed the development of procedure for starting material (silicon) qualification, by using the photoconductive decay technique (PCD) with two surface passivation procedures: thermal oxidation and light phosphorus diffusion. Later, using PCD system, new optimizations of n+ homogeneous emitters and p-type region were performed, followed by passivating thermal oxidations with hydrogenation, maintaining the volume lifetime at high values (approximately 1ms, after each thermal step). These results qualified the used silicon and the consumer materials, as well the new fabrication process developed. This technique has also allowed qualifying the processed Gaussian profile emitters, providing values about 45fA/cm2 for the recombination current density in n+pp+ structures. N+p structures were also developed using Cz silicon with low resistivity 2- 3W.cm of two different manufacturers and FZ with 0.5W.cm. It could be proved the quality of the steps of a complete optimized process resulting implicit open circuit voltages of 652.4mV (Cz silicon - manufacturer type 1), 662.6mV (Cz silicon - manufacturer type 2), and 670.8mV (FZ silicon). According to the theoretical simulations performed using the usual parameters of devices processed at LME (random chemical texturization and SiO2 film), efficiencies between 19%-20% can be reached. However, using a random texturization and a double layer anti-reflection system, a 21% efficiency becomes possible, surpassing the 17% barrier (national record), and proving the potentiality of this laboratory facility for the development of solar cells non-dependent on impurity gettering through the aluminum diffusion.

O trabalho realizado nesta tese esteve apoiado em dois objetivos principais. O primeiro centrado na otimização das etapas e processos de fabricação de células solares de silício de alto rendimento envolvendo redução de custos. O segundo objetivo foi direcionado na implementação de células solares eficientes e não dependentes do armadilhamento de impurezas através da difusão de alumínio. Para levar a cabo estes objetivos de forma planejada, o trabalho dividiu-se em otimizações teóricas e implementações experimentais. As otimizações teóricas foram realizadas utilizando dois programas: um programa desenvolvido (simulacell.pas) e implementado no próprio LME (versão 2), e o outro adquirido comercialmente, PC1D. De acordo com os resultados obtidos em estruturas completas n+p e n++n+p foi possível concluir que tanto as estruturas formadas através de emissores homogêneos como as obtidas utilizando emissores duplamente difundidos permitem alcançar eficiências elevadas, 25,5% a 26,0%, respectivamente, em um amplo intervalo de espessuras e concentrações superficiais de dopantes. No que tange aos desenvolvimentos experimentais, este trabalho se inicia com o desenvolvimento de um processo simplificado de baixo custo, em células solares de silício Cz de baixa resistividade com estrutura n+pp+, tipo \"mesa\". Este processo simplificado também está baseado na difusão de fósforo e alumínio (P/Al), utilizando gases industriais e reagentes químicos de grau \"para análise\", como uma transposição do processo de fabricação anteriormente desenvolvido no LME-EPUSP em substratos de silício FZ utilizando tecnologia planar. A célula solar mais representativa do processo implementado, A-16-1, permitiu atingir eficiências no entorno de 17%. As implementações experimentais visaram inicialmente o desenvolvimento de um procedimento visando à qualificação de materiais de partida (silício), utilizando a técnica de decaimento fotocondutivo (PCD) através de dois procedimentos de passivação de superfícies; oxidações térmicas e difusões suaves de fósforo. Posteriormente, utilizando o sistema PCD, novas otimizações dos emissores de tipo n+ homogêneos e regiões de tipo p foram realizadas, seguidos por oxidações térmicas passivadoras hidrogenadas, preservando-se o tempo de vida do volume em valores elevados (aproximadamente 1ms, após a realização de todas as etapas térmicas). Estes resultados qualificam o silício e os materiais de consumo utilizados, assim como, o novo processo de fabricação desenvolvido. Esta técnica também permitiu qualificar os emissores com perfil Gaussianos processados, atingindo valores da ordem de 45fA/cm2 para densidades de recombinação em estruturas n+pn+. Desenvolveram-se também estruturas n+p em materiais Cz de baixa resistividade 2-3W.cm de dois diferentes fabricantes, e silício FZ com 0,5W.cm. Pôde ser comprovada a qualidade das etapas que compõem o processo completo otimizado tendo-se obtido tensões de circuito aberto-implícitas de 652,4mV (Si-Cz fabricante 1) e 662,6mV (Si-Cz fabricante 2), e 670,8mV (FZ). De acordo com simulações realizadas utilizando parâmetros habituais de dispositivos do próprio LME, estas tensões, quando associadas a um conjunto óptico frontal típico das células solares de alto rendimento do LME (texturização química aleatória e filme de SiO2), permitirão atingir valores entre 19% - 20%. Entretanto, utilizando texturização e camada dupla torna-se plausível atingir o marco de 21% de rendimento, ultrapassando assim a barreira dos 17% (recorde nacional), e comprovando a potencialidade da infra-estrutura deste laboratório para o desenvolvimento de células solares não dependentes do efeito do armadilhamento de impurezas através da difusão de alumínio. / The work developed at this thesis has been based on two main objectives. First, it was focused on the optimization of the steps and processes for the fabrication of high efficiency solar cells, reducing production costs. The latter objective was directed to develop solar cells that were efficient and non-dependent on impurities gettering performed through the aluminum diffusion. In order to attend the planned objectives the work was divided into the theoretical objectives and experimental developments. The theoretical optimizations were performed using two different program codes: one was developed at LME (simulacell.pas), being upgraded afterwards (version 2); and the other was acquired commercially, the PC1D. According to the obtained results in complete structures n+p and n++n+p, it was possible to conclude that the homogeneous and double diffused emitter structures can provide high efficiencies, from 25,5% to 26,0%, respectively, for a wide range of thicknesses and surface doping levels. Concerning the experimental developments, this work starts with a low cost simplified process, using Cz silicon solar cells with low base resistivity and the structure n+pp+, \"mesa\" type. This simplified process was also based on the phosphorus/ aluminum diffusion (P/Al), using industrial gases and for analysis grade chemical reagents, as a fabrication process transposition of the process previously developed at LME-EPUSP using silicon substrates with planar technology. The most representative solar cells of the implemented process, A-16-1, provided about a 17% efficiency. The experimental implementations aimed the development of procedure for starting material (silicon) qualification, by using the photoconductive decay technique (PCD) with two surface passivation procedures: thermal oxidation and light phosphorus diffusion. Later, using PCD system, new optimizations of n+ homogeneous emitters and p-type region were performed, followed by passivating thermal oxidations with hydrogenation, maintaining the volume lifetime at high values (approximately 1ms, after each thermal step). These results qualified the used silicon and the consumer materials, as well the new fabrication process developed. This technique has also allowed qualifying the processed Gaussian profile emitters, providing values about 45fA/cm2 for the recombination current density in n+pp+ structures. N+p structures were also developed using Cz silicon with low resistivity 2- 3W.cm of two different manufacturers and FZ with 0.5W.cm. It could be proved the quality of the steps of a complete optimized process resulting implicit open circuit voltages of 652.4mV (Cz silicon - manufacturer type 1), 662.6mV (Cz silicon - manufacturer type 2), and 670.8mV (FZ silicon). According to the theoretical simulations performed using the usual parameters of devices processed at LME (random chemical texturization and SiO2 film), efficiencies between 19%-20% can be reached. However, using a random texturization and a double layer anti-reflection system, a 21% efficiency becomes possible, surpassing the 17% barrier (national record), and proving the potentiality of this laboratory facility for the development of solar cells non-dependent on impurity gettering through the aluminum diffusion.