This thesis proposes a novel graphical model for inference called the Affinity Network,which displays the closeness between pairs of variables and is an alternative to Bayesian Networks and Dependency Networks. The Affinity Network shares some similarities with Bayesian Networks and Dependency Networks but avoids their heuristic and stochastic graph construction algorithms by using a message passing scheme. A comparison with the above two instances of graphical models is given for sparse discrete and continuous medical data and data taken from the UCI machine learning repository. The experimental study reveals that the Affinity Network graphs tend to be more accurate on the basis of an exhaustive search with the small datasets. Moreover, the graph construction algorithm is faster than the other two methods with huge datasets. The Affinity Network is also applied to data produced by a synchronised system. A detailed analysis and numerical investigation into this dynamical system is provided and it is shown that the Affinity Network can be used to characterise its emergent behaviour even in the presence of noise.

This thesis consists of three main parts, starting with the use of improved nitridation processes to grow acceptable quality gate oxides on silicon carbide (SiC)[1]–[7], to the comprehensive investigation of basic electron-hole generation process in 4H SiC-based metal–oxide–semiconductor (MOS) capacitors [8], [9], and concluding with the experimental demonstration and analysis of nonvolatile characteristics of 4H SiC-based memory devices [10]–[15]. In the first part of the thesis, two improved versions of nitridation techniques have been introduced to alleviate oxide-growth rate and toxicity problems. Using a combination of nitridation and oxidation processes, a sandwich technique (nitridation–oxidation–nitridation) has been proposed and verified to solve the lengthy and expensive oxide-growing process in direct nitric oxide (NO) gas [1]. The nitrogen source from the toxic-NO gas has been replaced by using a nontoxic nitrous oxide (N2O) gas. The best combination of process parameters in this gas is oxide-growing temperature at 1300oC with 10% N2O [2], [3]. The quality of nitrided gate oxides obtained by this technique is lower than the sandwich technique [6], [13]. Using 4H SiC-based MOS with nitrided gate oxides grown by either of the abovementioned nitridation techniques, the fundamentals of electron-hole generation have been investigated using high-temperature capacitance–transient measurements. The contributions of carrier generation, occurring at room temperature, in the bulk and at the SiC–SiO2 interface are evaluated and compared using a newly developed method [8], [9]. The effective bulk-generation rates are approximately equal for both types of nitrided oxides, whereas the effective surface-generation rates have been shown to exhibit very strong dependencies on the methods of producing the nitrided gate oxide. Based on analysis, the prevailing generation component in a SiC-based MOS capacitor with nitrided gate oxide is at SiC–SiO2 interface located below the gate. Utilizing the understanding of electron-hole generation in SiC, the nonvolatile characteristics of memory device fabricated on SiC have been explored. The potential of developing a SiC-based one-transistor one-capacitor (1T/1C) nonvolatile-dynamic memory (NDM) has been analyzed using SiC-based MOS capacitors as storage elements or test structures. Three possible leakage mechanisms have been evaluated [10]–[16]: (1) leakage via MOS capacitor dielectric, (2) leakage due to electron-hole generation in a depleted MOS capacitor, and (3) junction leakage due to generation current occurred at a reverse-biased pn junction surrounding the drain region of a select metal–oxide– semiconductor field–effect–transistor (MOSFET). Among them, leakage through capacitor oxide remains an important factor that could affect the nonvolatile property in the proposed device, whereas others leakage mechanisms are insignificant. Based on the overall results, the potential of developing a SiC-based 1T/1C NDM is encouraging.

The humidity, temperature, wind speed/direction micro sensors can be manufactured individually, resulting in three individual substrates. The integration of the three sensors into a single substrate is a vital challenge to achieve an integrated intelligent sensor so called a multiple sensor. This requires the integration of process flows and is a major challenge because adequate sensor performance must be maintained. Polyimide was selected as a humidity sensing material for its compatibility with conventional integrated circuit fabrication technology, negligible temperature dependence and good resistance against contamination. Nickel was selected for the temperature and wind speed/direction sensor because of its useful temperature coefficient and the advantage of its cost. Since the known wet etchant for nickel requires hard-baked photoresist, a method which does not attack the polyimide while removing the photoresist must be developed. The method developed for etching nickel employs hard-bake-free photoresist. Other challenge was ensuring good thermal isolation for the wind speed/direction sensor fabricated on a silicon nitride layer preformed on top of a silicon wafer. Since silicon acts as a good heat sink, the silicon under the sensor was etched entirely away until the silicon nitride layer was reached. This structure achieved good thermal isolation resulting in small power consumption. This low power feature is essential for sensors deployed in fields where power access or replacement of power sources is restricted. This structure was compared with the structure created by polyimide plateau on a silicon nitride layer coated on a silicon substrate as a function of power consumption. Based on the examination of thermal isolation, the multiple sensor utilizing a MEMS technique was fabricated with a single-sided mask aligner. The characteristics of humidity sensors fabricated with polyimide were examined in detail with respect to variations of electrode structures, improvement of sensitivity, effect of process temperature, temperature and frequency dependence, and stability. The humidity sensor constructed with O2 plasma treated polyimide resulted an improvement in sensitivity and hysteresis. The investigation using XPS, FTIR and AFM concluded the chemical modification of polyimide played an important role in this improvement. The design, fabrication and results of a series of humidity sensors are quantified. There is always no unique packaging solution for sensors because of the application-specific nature of the sensors. This intelligent environmental monitoring system was designed to accommodate both an environmental sensor and its signal conditioning electronics circuitry (SICONEC) into a single package. The environmental sensors need direct exposure to the environment while SICONEC needs a sealed encapsulation to avoid environmental damage. A new style of packaging addressing these requirements was demonstrated using a hot embossing machine. The hot embossing machine was used to embed an integrated circuit (IC) in a bare die condition into a polycarbonate (PC) sheet. In this case, the IC was flipped down against the PC, which protects the front side of the IC from the environmental damages. In a test phase, a die containing operational amplifiers was embossed into the PC. A humidity sensor and surface mount resisters were placed on the same surface of the PC to test the validity of this new technique. Interconnection between the embossed die and the humidity sensor was established using bonding wires. Copper tracks were also used to ensure all electrical connections for the die, the humidity sensor and the resistors. The results clarified the method developed. Details of process methods, issues and further potential improvement are reported.