Les lasers à  cascade quantique (QCLs) sont des sources laser à  semi-conducteurs permettant de fortes puissances optiques dans le moyen-infrarouge. Les applications visées sont la spectroscopie à  distance et les contre-mesures optiques. Les performances des QCLs restent limitées par le transport électronique, le comportement optique et la dissipation de la charge thermique. Premièrement, cette thèse a permis une meilleure compréhension des éléments limitants les performances des QCLs. Les propriétés optiques et thermiques des matériaux qui constituent les QCLs ont été mesurées. En nous appuyant sur des simulations, nous avons montré l'impact de la géométrie du composant et de l'embase sur les performances. Deuxièmement, nous avons étudié des méthodes pour mettre en forme le faisceau afin d'augmenter la luminance du QCL. Nous avons ainsi montré que le couplage avec des fibres optiques ou l'utilisation de QCLs à  section évasée permettent de réduire la divergence du QCL. De plus, nous avons obtenu de très fortes puissances crêtes et moyennes avec des lasers larges tout en conservant un bon champ lointain. Enfin, nous avons montré qu'il est possible de mettre en forme le faisceau émis par des QCLs larges en réinjectant le signal optique. Dernièrement, nous avons proposé des nouvelles méthodes pour réaliser des réseaux de QCLs couplés monolithiquement. En plus de résultats expérimentaux sur des réseaux de QCLs uniformes, nous avons montré les limites des réseaux non-uniformes. Enfin, nous avons breveté une solution basée sur des antiguides en silicium amorphe pour coupler un grand nombre de QCLs. / Quantum cascade lasers (QCLs) are semiconductor laser sources able to produce high output power in mid-infrared range. Target applications are remote spectroscopy and optical counter-measure. Their performances are still limited by electronic transport, optical behavior and thermal load dissipation. First, this work has lead to a better comprehension of the features limiting the QCLs performances. Optical and thermal properties of the materials the QCLs are made of have been measured. By simulation, we have shown the impact of the device and submount's geometries on the performances. Second, we have studied some methods to shape the beam in order to increase the luminance of the QCL. We have then demonstrated that coupling with optic fibers, or using tapered QCLs reduces the divergence of the QCL. In addition, we have obtained very high peak and average powers with broad area (BA) QCLs, while keeping a good far-field quality. Finally, we have shown that it is possible to shape the beam emitted by BA QCLs by optical feedback. Lastly, we have proposed new methods to conceive monolithically phase-locked QCL arrays. On top of experimental results on uniform QCL arrays, we have shown the limits of non-uniform arrays. Finally, we have patented a solution based on amorphous silicon antiguides to phase-lock a large number of QCLs.

The ability to fabricate semiconductor wafers with spatially selected regions of different bandgap material is required for the fabrication of monolithic photonic integrated circuits (PIC's). Although this subject has been studied for three decades and many semiconductor engineering approaches have been proposed, the problem of achieving reproducible results has constantly challenged scientists and engineers. This concerns not only the techniques relaying on multiple sequential epitaxial growth and selective area epitaxy, but also the conventional quantum well intermixing (QWI) technique that has been investigated as a post-growth approach for bandgap engineering. Among different QWI techniques, those based on the use of different lasers appear to be attractive in the context of high-precision and the potential for cost-effective bandgap engineering. For instance, a tightly focused beam of the infrared (IR) laser could be used for the annealing of small regions of a semiconductor wafer comprising different quantum well (QW) or quantum dot (QD) microstructures. The precision of such an approach in delivering wafers with well defined regions of different bandgap material will depend on the ability to control the laser-induced temperature, dynamics of the heating-cooling process and the ability to take advantage of the bandgap engineering diagnostics. In the frame of this thesis, I have investigated IR laser-induced QWI processes in QW wafers comprising GaAs/A1GaAs and InP/InGaAsP microstructures and in InAs QD microstructures grown on InP substrates. For that purpose, I have designed and set up a 2-laser system for selective area rapid thermal annealing (Laser-RTA) of semiconductor wafers. The advantage of such an approach is that it allows carrying out annealing with heating-cooling rates unattainable with conventional RTA techniques, while a tightly focused beam of one of the IR lasers is used for `spot annealing'. These features have enabled me to introduce a new method for iterative bandgap engineering at selected areas (IBESA) of semiconductor wafers. The method proves the ability to deliver both GaAs and InP based QW/QD wafers with regions of different bandgap energy controlled to better than « 1nm of the spectral emission wavelength. The IBESA technique could be used for tuning the optical characteristics of particular regions of a QW wafer prepared for the fabrication of a PIC. Also, this approach has the potential for tuning the emission wavelength of individual QDs in wafers designed, e.g., for the fabrication of single photon emitters. In the 1st Chapter of the thesis, I provide a short review of the literature on QWI techniques and I introduce the Laser - RTA method. The 2nd Chapter is devoted to the description of the fundamental processes related to the absorption of laser light in semiconductors. I also discuss the results of the finite element method applied for modeling and semi-quantitative description of the Laser - RTA process. Details of the experimental setup and developed procedures are provided in the 3rd Chapter. The results concerning direct bandgap engineering and iterative bandgap engineering are discussed in the 4th and 5th Chapters, respectively.

The Master´s thesis subject is a design and an estimation of the load-bearing structure of a multi-storeyed building. The structure has a miscellaneous ground-plan shape consisting of three rectangular tracts and it is placed in the building basement under the ground level. The load-bearing structure involves walls and a floor slab which rises up vertically closer to the ground level in the central tract. Among further components being solved belong stairs, basement slab and beam. The load-bearing structure is solved monolithically as steel concrete component.