Résumé indisponible / Résumé indisponible

Orientador: Lucila Helena Deliesposte Cescato / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-07T11:04:51Z (GMT). No. of bitstreams: 1 Quinonez_FabiolaAzanha_M.pdf: 3774661 bytes, checksum: 43303e872404bf21c83ed4ea86d8befe (MD5) Previous issue date: 2006 / Resumo: Nesta tese foi utilizado um programa baseado em elementos finitos para projetar cristais fotônicos bidimensionais, assim como foram desenvolvidos processos de litografia holográfica para gravação destas estruturas fotônicas em filmes de carbono amorfo hidrogenado, depositados sobre substratos de vidro. O projeto dos parâmetros geométricos das estruturas que apresentam um gap fotônico, numa dada região de interesse do espectro óptico, foi feito através do cálculo dos diagramas de bandas das estruturas, levando-se em consideração as dimensões e formas que possam ser fabricadas utilizando a técnica de litografia holográfica. Para gravação dos cristais fotônicos bidimensionais, com simetrias cúbica e hexagonal, foi utilizada a técnica de superposições sucessivas de padrões, gerados pela interferência de duas ondas planas (exposições holográficas), associadas à litografia do filme de carbono por plasma reativo (RIE ¿ Reactive Ion Etching) / Abstract: In this thesis, we employed a software based on finite element method to design two-dimensional photonic crystals, as well as we developed a holographic lithography process to record these photonic structures in amorphous carbon films, coated on glass substrates. In order to present a photonic band gap in a desired region of the optical spectrum, the geometrical parameters of the structures were defined by analyzing the calculated band diagram of the structures. Such definition takes into account the dimensions and forms of the structures that can be fabricated using techniques of holographic lithography. To record the two-dimensional photonic crystals, with cubic and hexagonal symmetries, we used the technique of successive superimposition of fringe patterns. The patterns were generated by the interference of two plane waves (holographic exposures), associated to the lithography of the carbon film by reactive ion etching / Mestrado / Propriedades òticas e Espectroscopia da Matéria Condensada ; Outras Inter. da Mat. Com Rad. e Part / Mestre em Física

Orientador: Hugo Luis Fragnito / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin. / Made available in DSpace on 2018-08-12T16:20:28Z (GMT). No. of bitstreams: 1 Wiederhecker_GustavoSilva_D.pdf: 26845631 bytes, checksum: f23a4b48df09da35f76ca70361b0231d (MD5) Previous issue date: 2008 / Resumo: Neste trabalho são investigadas técnicas para controlar o confinamento de fótons e fônons em fibras ópticas de cristal fotônico (PCF). Utilizando métodos numéricos robustos para resolver as equações de Maxwell, um novo tipo de PCF com núcleo tubular é proposto. Simulações e experimentos demonstram que esta estrutura confina a luz em um buraco de ar com diâmetro de apenas 110 nm. A figura de mérito para efeitos não-lineares nesta pequena região é 10 bilhões de vezes maior do que no caso de um feixe gaussiano altamente focalizado e 100 vezes maior que o atual estado-da-arte em fibras de band-gap fotônico. Também é analisada teoricamente uma fibra PCF do tipo kagomé. Modelos que explicam suas complexas características de guiamento são investigados de forma analítica e numérica. No que diz respeito à fônons em PCFs, é investigado o espalhamento Brillouin copropagante e contra-propagante. Em particular, são demonstradas maneiras de reduzir a interação acusto-óptica nos casos de co- e retro-espalhamento. Também é demonstrada a presença de band-gaps fonônicos nestas estruturas. Finalmente, é investigado o controle óptico coerente de modos acústicos nestas fibras, mostra-se que é possível amplificar ou frear modos acústicos com freqüência de oscilação na faixa de GHz. / Abstract: Techniques that may allow control and tight confinement of photons and phonons in photonic crystal fibers (PCFs) are investigated in this thesis. By means of robust numerical methods to solve Maxwell equations, a new kind of PCF with a tubular core is proposed. Simulations and experimental results show that such structure is able to confine light tighly inside the 100 nm bore, the nonlinear figure of merir for such tiny bore is found to be 10 billion fold larger the focused Gaussian beam counterpart, it is also 100 times larger than the state-of-the-art hollow core photonic band-gap fibers. The guidance mechanism of kagomé structure hollow-core PCF is also investigated, simple models are proposed to explain most of the experimentally observed features and compared to full numerical simulations. In what concerns phonons, both forward and backward Brillouin scattering is investi-gated in PCFs. It is demonstrated how one may suppress both using such fibers. It is also shown the existence of complete band-gaps for in-plane propagation in the PCF cladding. Another set of experiments show that one can perform coherent optical control of the acoustic modes of such fibers, 100-fold amplification or almost complete suppression of GHz oscillations is achieved. / Doutorado / Física / Doutor em Ciências

Orientador: Hugo L. Fragnito / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-09T05:15:29Z (GMT). No. of bitstreams: 1 DaineseJunior_PauloClovis_D.pdf: 4977952 bytes, checksum: 68cd4c3ce792cf4994babe5cce9b77a9 (MD5) Previous issue date: 2006 / Resumo: Esta tese apresenta estudos experimentais e teóricos sobre o processo de espalhamento Brillouin em Fibras de Cristal Fotônico. Formadas por um núcleo sílica pura e uma casca micro-estruturada (sílica e ar), estas fibras permitem o confinamento óptico e acústico em regiões da ordem do comprimento de onda. Como resultado, a interação acústo-óptica apresenta características radicalmente diferentes daquelas observadas em meio bulk ou em fibras convencionais. Investigamos experimentalmente ambos co- e retro-espalhamento Brillouin. Observamos que quando o diâmetro do núcleo é ~70 % do comprimento de onda óptico no vácuo, o espectro de retro-espalhamento espontâneo apresenta múltiplos picos, os quais atribuímos a famílias de modos acústicos guiados no núcleo da fibra. Além disso, o limiar de retro-esplhamento Brillouin estimulado aumenta por um fator ~5 quando o diâmetro do núcleo é diminuído de 8 .m para 1.22 .m , resultado da natureza complexa dos modos acústicos no núcleo, contendo fortes componentes de deslocamento longitudinal e transversal. No caso de co-espalhamento, realizamos medidas de espalhamento espontâneo e de excitação impulsiva de ondas acústicas utilizando pulsos ópticos de alta intensidade, através do efeito de eletrostrição. Estes experimentos nos possibilitaram observar o confinamento transversal de ondas acústicas no núcleo da fibra fotônica. Desenvolvemos um modelo analítico para a interação acústo-óptica, aproximando o núcleo da fibra como um cilindro de silica suspenso no vácuo, sem a presença da casca. Este modelo nos permitiu entender a física envolvida no processo e também explicar qualitativamente as observações experimentais. Modelos numéricos mais sofisticados foram utilizados para o cálculo dos modos acústicos e óptico suportados pela estrutura completa da fibra fotônica, os quais nos permitiram explicar mais precisamente as observações experimentais. Finalmente, realizamos cálculos numéricos da estrutura de bandas da região micro-estruturada, demonstrando a presença de bandas proibidas (ou gaps fonônicos) para as ondas acústicas / Abstract: This thesis presents experimental and theorethical studies on Brillouin scattering in Photonic Crystal Fibers. With a pure silica core surrounded by a microstructed cladding (silica and air), these fibers allow the confinement of both acoustic and optical waves in sub-wavelength regions. The result is a radically different acousto-optic interaction from what has been observed in bulk media or conventional fibers. We investigate experimentally both forward and backward Brillouin scattering. We observed that for core diameters of around 70% of the vacuum wavelength of the launched laser light, the spontaneous Brillouin signal develops an unusual multi-peaked spectrum, these peaks we attribute to several families of guided acoustic modes. At the same time the threshold power for stimulated Brillouin scattering increases five-fold when the core diameter is reduced from from 8 .m to 1.22 .m , as a consequence of the complex nature of the acoustic modes, each with different proportions of longitudinal and shear strain, strongly localised to the core. In the case of forward scattering, we performed measurements of the spontaneous scattering and also of impulsive excitation of acoustic waves using high intensity optical pulses, through the effect of electrostriction. These experiments allowed us to observe the transverse confinment of acoustic waves in the core of the photonic crystal fiber. An analitic model for the acousto-optic interaction was developed by approximating the core of the photonic fiber by a circular strand of glass in vaccum, initially neglecting the presence of the micro-structured cladding. This simple model allowed us to understand the physics involved in the scattering process and also to qualitatevely explain our experimental observations. Numerical models were then implemented to calculate the acoustic and optical modes of the actual photonic fiber structure, and we were able to explain more precisely our observations. Finnally, we performed numerical calculation of the band structure of the micro-structured region, demonstrating the presence of prohibited gaps for the acoustic wave (phononics band gaps) / Doutorado / Física / Doutor em Ciências

A modelagem numérica de cristais fotônicos tridimensionais é o objeto de estudo deste trabalho. Especificamente, o método das diferenças finitas no domínio do tempo (FDTD) é utilizado para a modelagem de um cristal FCC (face-centered-cubic) formado por opalas de látex imersas em ar. Por meio de uma análise comparativa com o cristal formado por opalas inversas (opalas de ar incrustadas em uma matriz dielétrica com alto índice de refração), é mostrado que o baixo contraste de índice de refração do cristal de látex é característica preponderante para a inexistência de uma banda proibida completa. No entanto, podem ser observadas bandas fotônicas proibidas ao longo de algumas direções de propagação, como é evidenciado através da investigação da difração de Bragg relativa à família de planos cristalinos (111). Sempre que possível os resultados numéricos são comparados com os dados experimentais disponíveis. / The numerical modeling of tridimensional photonic crystals is the object of study in this work. Especifically, the finite difference time domain method (FDTD) is used for the modeling of a FCC (face-centered-cubic) crystal composed by latex opals immersed in air. Through a comparative analysis to a crystal composed by inverse opals (close-packed air opals in a dielectric matrix with high refractive index), it is shown that the low contrast of the latex crystal is the crucial characteristic to prevent the rising of a complete photonic band gap. However, photonic band gaps can be observed for certain directions of propagation, as it is demonstrated by the investigation of Bragg diffraction related to the (111) crystalline planes. Wherever possible, the numerical results are compared to available experimental data.

A fotônica em silício é um campo de pesquisas emergente com grande potencial para contribuir com a resolução de alguns dos problemas tecnológicos da atualidade. O gargalo imposto por interconexões metálicas na expansão da taxa de transmissão de dados em sistemas de comunicação como os de computadores de alto desempenho talvez seja um dos maiores desafios a serem superados. A propagação de luz em baixas velocidades de grupo e com controle de dispersão é uma das linhas de pesquisa atuais nas quais se busca explorar de forma mais eficiente as propriedades ópticas do silício, e assim, aumentar a compatibilidade entre componentes fotônicos e a tecnologia CMOS (Complementary Metal- Oxide-Semiconductor) por meio da diminuição das dimensões e do consumo de energia de componentes ópticos ativos. Dessa forma, espera-se diminuir os custos de fabricação e viabilizar a produção em larga escala de dispositivos integrados optoeletrônicos, que poderiam ser utilizados em sistemas de comunicação de curtas distâncias e assim ampliar a largura de banda disponível. Investigações recentes têm demonstrado que a fabricação de dispositivos baseados em cristais fotônicos planares possui grande potencial para controlar simultaneamente a velocidade de grupo e a dispersão, além de permitir a redução do tamanho de elementos como curvas, divisores de potência e cavidades ressonantes devido ao efeito do confinamento dos campos através do bandgap fotônico. Dessa forma, esse trabalho aborda um estudo sobre a integração monolítica entre guias de onda, curvas de 60º e junções em Y que operam em baixas velocidades de grupo e com reduzida dispersão, construídos em cristais fotônicos planares formados por uma matriz periódica de furos em uma membrana de silício suspensa em ar. Essa investigação englobou atividades bastante intensivas, tanto de simulações por métodos numéricos, como de processos de fabricação dedicados à nanofotônica, assim como de caracterizações ópticas. Ao longo das discussões são identificados e analisados os mecanismos que afetaram de forma mais crítica a eficiência dos dispositivos propostos. Também foram avaliados os maiores problemas enfrentados nos processos de fabricação, e suas possíveis soluções foram apontadas. Os resultados demonstraram a possibilidade teórica de realizar tal integração de forma eficiente. O melhor entendimento sobre a relação entre a dispersão e os parâmetros geométricos dos guias de onda permitiram modelar curvas e divisores de potência que exibiram, respectivamente, larguras de banda em torno de 56 e 40 nm, cobrindo regiões do espectro com elevados índices de grupo. Foi possível fabricar cristais fotônicos com uma qualidade próxima das já reportadas na literatura sobre o tema e assim foram estabelecidas bases bastante sólidas para a fabricação de tais dispositivos localmente, sem a necessidade expressa de acessar centros de fabricação no exterior. / Silicon photonics is an emerging research field that has great potential to contribute to solving some of the technological problems nowadays. Maybe, one of the greatest challenges to be overcome is the bottleneck imposed by electrical interconnections in the expansion of the bandwidth of communication systems such as those of high performance computers. Slow light propagation in dispersionless media is a hot topic in the current research fields that seek to more efficiently explore the silicon optical properties, and thus, increase the compatibility between photonic components and CMOS technology by decreasing the footprint and power consumption of active optical components. This way, the manufacturing costs it is expected to be reduced by making the large-scale production of integrated optoelectronic devices feasible, and so, they could be used in short distance communication systems to expand the available bandwidth. Recent researches has also shown that photonic crystal slab waveguides are very promising to simultaneously control group velocity and devices dispersion, as well as in the reduction of the size of elements such as bends, power splitters and nanocavities due to the fields confinement through the photonic bandgap effect. Thus, this work addresses a study of the monolithic integration of slow light and dispersionless waveguides, 60º bends, and Y-junctions fabricated in air-bridge photonic crystal slabs formed by the drilling of a periodic array of air holes in a silicon membrane. The research was accomplished with intensive activities in numerical simulations, as well as in nanophotonic manufacturing processes, and optical characterizations. Throughout the discussions were identified and analyzed the mechanisms that more critically affected the devices efficiency. The major problems faced in the manufacturing processes were also evaluated, and their possible solutions were pointed out. The results demonstrated a theoretical possibility of performing such integration more efficiently. Having a better understandment about the relation between the photonic crystal waveguides geometrical parameters and their dispersion allowed the modeling of bends and power splitters which exhibited 3 dB bandwidths that covered, respectively, ranges around 56 and 40 nm, along spectral regions with very high group indices. It was possible to fabricate photonic crystals with a quality close to those already reported in the literature on this subject and thus, very solid bases were established for the manufacture of such devices locally, without the necessity of accessing manufacturing centers abroad.

Orientador: Hugo Enrique Hernández Figueroa / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação / Made available in DSpace on 2018-08-19T00:51:23Z (GMT). No. of bitstreams: 1 Pasetto_TadeuPires_M.pdf: 7097480 bytes, checksum: a432943fd52e29cfe68bd7e99f0b14f7 (MD5) Previous issue date: 2011 / Resumo: Este trabalho apresenta o estudo, o projeto e a caracterização de estruturas de cristal fotônico bidimensionais na faixa de micro-ondas para arranjos cilíndricos dielétricos em simetria triangular e quadrada, com e sem curvas, na faixa de 2 a 4 GHz. A escolha dos arranjos foi feita baseando-se no cálculo do diagrama de bandas e dos modos guiados no cristal após ser removida uma linha de elementos. Foram projetadas estruturas casadoras que tornaram possível caracterizar esses guias de onda com o auxílio de um analisador de rede. As montagens das estruturas de cilindros dielétricos com as placas metálicas e as estruturas casadoras, foram simulada no programa comercial CST Microwave Studio 2010®. Uma vez construída e caracterizada as estruturas, os resultados foram analisados e comparados. A banda passante apresentou um deslocamento em frequência, coerente com os erros da montagem construída / Abstract: This work presents the study, design and measurements of microwave twodimensional photonic crystal waveguides, for square and triangular arrays of dielectric roads, with and without bend, in the 2-4 GHz band. The choice of the arrays was based on the calculated band diagrams of the crystals and guided modes for the waveguide which arises when a line of roads is removed from the crystal structure. Matching structures were projected to enable the corresponding measurements using a network analyzer. The entire structure: dielectric roads, metallic plates and matching structures, was simulated using the CST Microwave Studio 2010®, constructed and measured, and the results were analyzed and compared. The measured guided band frequency exhibits a shift when compared with the simulated one, consistent with the imprecision of the setup / Mestrado / Telecomunicações e Telemática / Mestre em Engenharia Elétrica

Ce travail de thèse est consacré au piégeage de la lumière par des cristaux photoniques(CP) et des réseaux de diffraction. L’objectif consiste à intégrer de telles structures dans des cellules solaires à couches ultra-minces de silicium, afin d’augmenter leur rendement de conversion. Nous avons conçu et optimisé des cellules solaires en silicium cristallin (c-Si) assistées par les CP, grâce à la méthode FDTD (Finite Difference Time Domain). En gravant un CP 2Ddans la couche active de silicium, l’absorption intégrée sur l’ensemble du spectre est augmentée de 50%. Cette amélioration est atteinte en combinant des modes de Bloch lent et des résonances Fabry-Perot. Afin de réaliser de telles cellules solaires, nous avons développé une filière technologique combinant insolation holographique, gravure ionique réactive et gravure ICP (Inductively Coupled Plasma). Nous avons étudié l’influence des paramètres de ces procédés sur la structuration réalisée. Enfin, les caractéristiques optiques et électriques de ces objets ont été mesurées par nos collaborateurs de l’IMEC, en Belgique. Les mesures d’absorption sont en bon accord avec les prédictions théoriques. De plus, l’absorption intégrée est peu sensible à l’angle d’incidence de la lumière solaire. La cellule solaire structurée comme un CP 2D présente finalement un courant de court-circuit d’environ 15mA/cm², soit20% plus élevé que dans le cas de la cellule de référence. Par ailleurs, nous avons conçu une cellule solaire en c-Si plus complexe, intégrant des réseaux de diffraction avant et arrière. L’absorption aux grandes longueurs d’onde est augmentée du fait de la période élevée (750 nm) du réseau arrière, tandis que la réflexion en face avant est diminuée du fait de la faible période (250 nm) du réseau avant. Nous avons prédit une augmentation du courant de court-circuit jusqu’à 30m A/cm² pour ce dispositif, en comparaison avec la valeur de 18 mA/cm² correspondant à la cellule de référence non structurée. Ces résultats sont première étape vers le développement de futures générations de cellules solaires assistées par des cristaux photoniques et des réseaux de diffraction. / Gratings are considered. The goal is to integrate such structures into ultra-thin film silicon photovoltaic solar cells, with a view to improve their conversion efficiency. First, a PCs assisted ultra-thin film crystalline silicon (c-Si) solar cell is designed optimized by using the Finite Different Time Domain (FDTD) approach. An increase over50% is achieved for the absorption, as integrated over the whole spectral range, by patterning a 2D PCs in the active Si layer. This enhancement is achieved by combining Slow Bloch modes and Fabry-Perot modes. In order to fabricate such solar cells, we developed a process based on Laser Holographic Lithography, Reactive Ion Etching and Inductivity Coupled Plasma etching. We have investigated the influence of the parameters taking part in these processes on the obtained patterns. Finally the optical and electrical properties of the devices have been characterized by our co-workers at IMEC, Belgium. Absorption measurements are in good agreement with the theoretical simulations. Moreover, the integrated absorption is tolerant with regard to the sunlight angle of incidence. The final fabricated 2D PCs patterned solar cell exhibits a 20% higher short circuit current (Jsc = 15mA/cm2) than the reference. Additionally, a more complex thin film c-Si solar cells integrating front and back diffraction gratings has been designed. Long wavelength absorption is increased thanks to the long period (750 nm) back grating, while the incident light reflection is reduced by using a short period (250 nm) front grating. A short-circuit current increase up to 30 mA/cm² is predicted for this device, far above the 18 mA/cm² value for the unpatterned reference These are first steps towards the development of a future generation of PC and diffraction grating assisted solar cells.

Doctor of Philosophy / Department of Physics / Hongxing Jiang / Deep ultraviolet (UV) photoluminescence (PL) spectroscopy has been employed to study optical properties of AlGaN alloys, undoped and doped AlN epilayers and nanostructure AlN photonics crystals (PCs). Using a deep UV laser system with an excitation wave length at 197 nm, continuous wave PL, temperature dependent, and time-resolved PL have been carried out on these AlGaN and AlN epilayers and nanostructures. We have measured the compositional and temperature dependence of the energy bandgap of AlxGa1-xN alloys covering the entire alloy range of x, 0 ≤ x ≤ 1 and fitted with the Varshni equation. Varshni coefficients, alpha and beta in AlGaN alloys have a parabolic dependence with alloy concentration x. Based on the experimental data, an empirical relation was thus obtained for the energy gap of AlGaN alloys for the entire alloy concentration and at any temperature below 800 K. The exciton localization energy in AlxGa1-xN alloys the entire composition range (0 ≤ x ≤ 1) has been measured by fitting the band edge emission peak energy with the Varshni equation. Deviations of the excitonic emission peak energy from the Varshni equation at low temperatures provide directly the exciton localization energies, ELoc in AlGaN alloys. It was found that ELoc increases with x for x ≤ 0.7, and decreases with x for x ≥ 0.8. The relations between the exciton localization energy, the activation energy, and the emission linewidth have been established. It thus provides three different and independent methods to determine the exciton localization energies in AlGaN alloys. Impurity transitions in AlGaN alloys have also been investigated. Continuous wave (CW) PL spectra of Si and undoped AlGaN alloys reveals groups of impurity transitions that have been assigned to the recombination between shallow donors and an isolated triply charged cation-vacancy (VIII)3-, a doubly charged cation-vacancy-complex (VIII-complex)2-, and a singly charged cation-vacancy-complex (VIII-complex)-1. The energy levels of these deep acceptors in AlxGa1-xN (0 ≤ x ≤ 1) alloys are pinned to a common energy level in the vacuum. AlGaN alloys predominantly exhibiting the bandedge and (VIII-complex)1- transitions possess improved conductivities over those emitting predominantly (VIII)3- and (VIII-complex)2- related transitions. These results thus answer the very basic question of high resistivity in Al-rich AlGaN alloys. Acceptor doped AlGaN alloys have been studied by deep UV PL. A PL emission line at 6.02 eV has been observed at 10 K in Mg-doped AlN. It is due to the recombination of an exciton bound to the neutral Mg acceptor (I1) with a binding energy, Ebx of 40 meV, which indicates large activation energy of the Mg acceptor. The observed large binding energy of the acceptor-bound exciton is consistent with relatively large binding energy of the Mg acceptor in AlN. With the energy level of 0.51 eV for Mg dopants in AlN, it is interesting and important to study other suitable acceptor dopants for AlN. Growth and optical studies of Zn-doped AlN epilayers has been carried out. The PL spectra of Zn-doped AlN epilayers exhibited two impurity emission lines at 5.40 and 4.50 eV, which were absent in undoped epilayers. They are assigned respectively, to the transitions of free electrons and electrons bound to triply positively charged nitrogen vacancies (0.90 eV deep) to the Zn0 acceptors. It was deduced that the Zn energy level is about 0.74 eV above the valence band edge, which is about 0.23 eV deeper than the Mg energy level in AlN. Nitrogen vacancies are the compensating defects in acceptor doped AlGaN alloys. A nitrogen vacancy (VN) related emission line was also observed in ion-implanted AlN at 5.87 eV and the energy level of singly charged VN1+ is found at 260 meV below the conduction band. As a consequence of large binding energy of VN1+ as well as high formation energy, VN1+ in AlN cannot contribute significant n-type conductivity, which is consistent with experimental observation. The temperature dependent PL study of the bandedge emissions in GaN and AlN epilayers up to 800 K has been carried out, which reveals two distinctive activation processes. The first process occurring below Tt = 325 K (Tt = 500 K) for GaN (AlN) is due to the activation of free excitons to free carriers, whereas the second occurring above Tt with an activation energy of 0.29 eV (0.3 eV) for GaN (AlN) is believed to be associated with a higher lying conduction band (3) at about 0.3 eV above the conduction band minimum (1). These higher lying bands could affect device performance of GaN and AlN at elevated temperatures. Two-dimensional nanostructured AlN photonic crystals (PCs) with a varying periodicity/diameter down to 150 nm/75 nm have also been studied by deep UV PL. With PCs formation, a 20-fold enhancement in the band edge emission intensity at 208 nm over unpatterned AlN epilayer has been observed. The emission intensity increases with the decrease in the lattice constant of the AlN PCs. AlN PCs represent photonic crystals with highest (shortest) bandgap (wavelength) semiconductors, which open up new opportunities for exploring novel physical phenomena in the artificially structured photonic band gap material systems and their applications, particularly in the area of deep UV as well as nano-photonics.

Ce travail porte sur la fabrication des structures photoniques (SPs) à base de polymères etleurs applications en optique non-linéaire. Dans la première partie, nous avons démontré lafabrication des SPs souhaitées par la méthode d’interférence. En particulier, l’interférencede deux faisceaux laser avec une exposition multiple est démontrée théoriquement etexpérimentalement comme un meilleur choix pour la fabrication des structures souhaitées,qui sont uniformes et de grande taille. Diverses structures à 1D, 2D, et 3D, périodiques etquasi-périodiques sont fabriquées avec succès dans la résine SU8. Nous avons égalementdémontré un moyen pour surmonter l’effet d’absorption de la photorésine, qui impose unelimitation de l’épaisseur des structures, en ajoutant un faisceau laser uniforme en sensopposé par rapport à deux faisceaux d’interférence. Les SPs fabriquées deviennent plusuniformes et leur épaisseur augmente jusqu’à 25 μm. Une autre approche utilisant laméthode d’absorption ultra-faible à un photon a également été mise en oevre montrant lapossibilité d’obtenir des SPs avec une épaisseur jusqu’à 600 μm. De plus, en utilisant latechnique d’interférence et l’effet de transport de masse, nous avons également démontré lafabrication des structures à relief de surface (SRG), avec une profondeur contrôlable, dansdes polymères passives (SU8) et des polymères actives (DR1/PMMA). Dans la deuxièmepartie, nous avons utilisé ces structures pour l’amélioration de la génération de secondeharmonique des matériaux polymères par deux manières différentes: quasi-accord de phase(QPM) et mode de résonance de guide d’onde (WRG). Les structures de QPM permet desurmonter le déphasage entre les ondes fondamentale et harmonique, et par conséquenceaugmente le rendement du taux de conversion. En outre, les structures de guide d’ondeavec une surface modulée (WRG) ont également été démontrées comme une excellenteméthode permettant d’amplifier le signal de SHG par un facteur de 25. / This dissertation deals with the fabrication of various polymer-based photonic structures(PSs) and their applications in nonlinear optics. In the first part, we have demonstratedthe fabrication of desired PSs by interference lithography technique. The two-beam interferencemethod is theoretically and experimentally demonstrated as a best choice forfabrication of all kinds of PSs with large and uniform area. Desired 1D, 2D, and 3D,periodic and quasi-periodic PSs are successfully fabricated on SU8 photoresist. We alsodemonstrated a way to overcome the material’s absorption effect, which imposes a limitationof PSs thickness. By adding one more exposure of a uniform laser beam in oppositedirection of two interfering beams, the fabricated PSs became more uniform and theirthickness increased to 25 μm. A tentative of using low one-photon absorption techniquewas also realized showing the possibility to obtain a PS with a thickness upto 600 μm.Furthermore, by using the interference technique combined with mass transport effect,we have demonstrated the fabrication of desired surface relief grating structures, with acontrollable depth, on passive polymer (SU8) and active polymer (DR1/PMMA). In thesecond part, we applied these fabricated structures for enhancement of nonlinearity ofpolymer materials by two different ways: quasi-phase-matching (QPM) and waveguideresonance grating (WRG). Both theoretical calculation and experimental realization ofthese techniques have been investigated. The QPM structures allowed to overcome thephase mismatch of fundamental and harmonic waves, thus increasing the conversion efficiency.The second-harmonic generation (SHG), one of the most important applicationsof frequency conversion, is significantly enhanced thanks to the QPM condition. Anothermethod basing on the WRG structures allowed to increase the intensity of fundamentalwave, thus enhancing the SHG signal by a factor of 25.