Photodetectors are used in many applications such as digital and thermal cameras or in solar panels. They can also be designed to detect the omnipresent high-energy radiation/particles, and for radiation imaging in biomedical applications. Novel nanostructures offer significant advantages compared to traditional designs for the realization of fast, sensitive, compact and cheap sensors and efficient solar cells. Examples of such nanostructures include quantum dots (QDs), quantum wells (QWs) and NW arrays. This thesis is devoted to experimental investigations of effects of high-energy (1 MeV) protons on the optical and electrical performance of InP/InAsP NW-based QDiscs-in wire photodetectors. The proton-induced degradation of the optical performance has been studied by means of Fourier Transform Infrared (FTIR) photocurrent spectroscopy. The spectrally resolved photocurrent (PC) and current-voltage (I-V) characteristics were measured at low temperature (5 K and 77K) and at room temperature (300K) before and after 1 MeV proton irradiation under vacuum conditions with fluences ranging from 1.0×1012–3.0×1013 cm-2. The particle radiation exposure has been done in the Ion Beam Accelerator at the Department of Nuclear Physics Department at Lund University. Considering both PC and I-V characteristics, it was found that the devices were sensitive to all proton irradiation at all fluences. In general, the PC intensity significantly increased after radiation for all fluences, however, a week after exposure the PC and dark current gradually recovered. At 3×1012 p/cm2 fluence level, it was figured out that photocurrent which attributed to QDiscs disappeared for a couple of days after exposure, however, over time and gradually, those started to manifest again even at low and room temperatures, causing radiation-induced changes in device parameters to be time-dependent; however, it was not recorded any signals related to QDiscs at fluence of 3×1013 p/cm2. Substantial changes in the dark I-V characteristics, as well as increases in the dark current, are observed after irradiation. The influence of proton irradiation on light and dark current characteristics also indicated that NW structures are a good potential candidate for radiation harsh-environment applications. It was also observed a significant increase in dark current after the radiation for all devices, however, by applying the voltage to the photodetectors, the PC and I-V characteristics gradually being to diminish, which may be attributed to an annealing process.