Submitted by Murilo Oliveira (murilo.oliveira@df.ufscar.br) on 2018-05-28T14:03:10Z No. of bitstreams: 1 MuriloOliveira_dissertacao.pdf: 3213764 bytes, checksum: eaf61f839f12dceed4b235ef7970e674 (MD5) / Rejected by Ronildo Prado (ri.bco@ufscar.br), reason: Oi Murilo, Faltou enviar a Carta comprovante assinada pelo orientador. Solicite o modelo em sua Secretaria de Pós-graduação, preencha e colete a assinatura com o orientador e acesse novamente o sistema para fazer o Upload. Fico no aguardo para finalizarmos o processo. Abraços Ronildo on 2018-06-04T17:58:14Z (GMT) / Submitted by Murilo Oliveira (murilo.oliveira@df.ufscar.br) on 2018-06-04T18:39:43Z No. of bitstreams: 2 MuriloOliveira_dissertacao.pdf: 3213764 bytes, checksum: eaf61f839f12dceed4b235ef7970e674 (MD5) IMG_20180604_0001.pdf: 522878 bytes, checksum: b7fa478fbcdf1b45955f8a02f8403af0 (MD5) / Approved for entry into archive by Ronildo Prado (ri.bco@ufscar.br) on 2018-06-06T17:29:19Z (GMT) No. of bitstreams: 2 MuriloOliveira_dissertacao.pdf: 3213764 bytes, checksum: eaf61f839f12dceed4b235ef7970e674 (MD5) IMG_20180604_0001.pdf: 522878 bytes, checksum: b7fa478fbcdf1b45955f8a02f8403af0 (MD5) / Approved for entry into archive by Ronildo Prado (ri.bco@ufscar.br) on 2018-06-06T17:32:09Z (GMT) No. of bitstreams: 2 MuriloOliveira_dissertacao.pdf: 3213764 bytes, checksum: eaf61f839f12dceed4b235ef7970e674 (MD5) IMG_20180604_0001.pdf: 522878 bytes, checksum: b7fa478fbcdf1b45955f8a02f8403af0 (MD5) / Made available in DSpace on 2018-06-06T17:32:18Z (GMT). No. of bitstreams: 2 MuriloOliveira_dissertacao.pdf: 3213764 bytes, checksum: eaf61f839f12dceed4b235ef7970e674 (MD5) IMG_20180604_0001.pdf: 522878 bytes, checksum: b7fa478fbcdf1b45955f8a02f8403af0 (MD5) Previous issue date: 2018-02-28 / Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) / The aim of this work is to study the electromagnetically induced transparency (EIT) and the coherent population trapping (CPT) phenomena in three-level systems, such as atoms and quantum dot molecules (QDM). The present work can be basically divided into two parts. The first one focus on comparing and explaining the differences between the optical reponses of systems composed by atoms and QDM and on proposing a possible application in cavity linewidth narrowing. In the second part, we turn our attention to the study of controlable optical bistability in three-level systems in the regime of CPT, bringing new perspectives to the study of these bistable systems and some practical applications as well. / O presente trabalho de mestrado tem como objetivo estudar o fenômeno da transparência eletromagneticamente induzida (EIT) e do aprisionamento coerente de populações (CPT) em sistemas de três níveis, como átomos e moléculas de ponto quântico (QDM). Essa dissertação pode ser dividida basicamente em duas partes. A primeira se encarrega de comparar e explicar a origem das diferenças observadas na resposta óptica de sistemas compostos por átomos e sistemas compostos por QDM, bem como propor uma possível aplicação para o sistema de QDM no estreitamento da largura de linha de cavidades. Já a segunda parte consiste de um estudo da biestabilidade óptica controlável em sistemas de 3 de níveis no regime de CPT, trazendo novas perspectivas de estudo desses sistemas biestáveis e aplicações como sensores de pequenas flutuações de frequência ou de amplitudes de campos eletromagnéticos. / CNPq: 131392/2016-6

Semiconductor quantum dots (QDs) are fascinating systems for potential applications in quantum information processing and communication, since they can emit single photons and polarisation entangled photons pairs on demand. The asymmetry and inhomogeneity of real QDs has driven the development of a universal and fine post-growth tuning technique. In parallel, new growth methods are desired to create QDs with high emission efficiency and to control combinations of closely-spaced QDs, so-called "QD molecules" (QDMs). These systems are crucial for the realisation of a scalable information processing device after a tuning of their interaction energies. In this work, GaAs/AlGaAs QDs with low surface densities, high optical quality and widely tuneable emission wavelength are demonstrated, by infilling nanoholes fabricated by droplet etching epitaxy with different GaAs amounts. A tuning over a spectral range exceeding 10 meV is obtained by inducing strain in the dot layer. These results allow a fine tuning of the QD emission to the rubidium absorption lines, increasing the yield of single photons that can be used as hybrid semiconductor-atomic-interface. By embedding InGaAs/GaAs QDs into diode-like nanomembranes integrated onto piezoelectric actuators, the first device allowing the QD emission properties to be engineered by large electroelastic fields is presented. The two external fields reshape the QD electronic properties and allow the universal recovery of the QD symmetry and the generation of entangled photons, featuring the highest degree of entanglement reported to date for QD-based photon sources. A method for controlling the lateral QDM formation over randomly distributed nanoholes, created by droplet etching epitaxy, is demonstrated by depositing a thin GaAs buffer over the nanoholes. The effect on the nanohole occupancy of the growth parameters, such as InAs amount, substrate temperature and arsenic overpressure, is investigated as well. The QD pairs show good optical quality and selective etching post-growth is used for a better characterisation of the system. For the first time, the active tuning of the hole tunnelling rates in vertically aligned InGaAs/GaAs QDM is demonstrated, by the simultaneous application of electric and strain fields, optimising the device concept developed for the single QDs. This result is relevant for the creation and control of entangled states in optically active QDs. The modification of the electronic properties of QDMs, obtained by the combination of the two external fields, may enable controlled quantum operations.

Semiconductor quantum dots (QDs) are fascinating systems for potential applications in quantum information processing and communication, since they can emit single photons and polarisation entangled photons pairs on demand. The asymmetry and inhomogeneity of real QDs has driven the development of a universal and fine post-growth tuning technique. In parallel, new growth methods are desired to create QDs with high emission efficiency and to control combinations of closely-spaced QDs, so-called "QD molecules" (QDMs). These systems are crucial for the realisation of a scalable information processing device after a tuning of their interaction energies. In this work, GaAs/AlGaAs QDs with low surface densities, high optical quality and widely tuneable emission wavelength are demonstrated, by infilling nanoholes fabricated by droplet etching epitaxy with different GaAs amounts. A tuning over a spectral range exceeding 10 meV is obtained by inducing strain in the dot layer. These results allow a fine tuning of the QD emission to the rubidium absorption lines, increasing the yield of single photons that can be used as hybrid semiconductor-atomic-interface. By embedding InGaAs/GaAs QDs into diode-like nanomembranes integrated onto piezoelectric actuators, the first device allowing the QD emission properties to be engineered by large electroelastic fields is presented. The two external fields reshape the QD electronic properties and allow the universal recovery of the QD symmetry and the generation of entangled photons, featuring the highest degree of entanglement reported to date for QD-based photon sources. A method for controlling the lateral QDM formation over randomly distributed nanoholes, created by droplet etching epitaxy, is demonstrated by depositing a thin GaAs buffer over the nanoholes. The effect on the nanohole occupancy of the growth parameters, such as InAs amount, substrate temperature and arsenic overpressure, is investigated as well. The QD pairs show good optical quality and selective etching post-growth is used for a better characterisation of the system. For the first time, the active tuning of the hole tunnelling rates in vertically aligned InGaAs/GaAs QDM is demonstrated, by the simultaneous application of electric and strain fields, optimising the device concept developed for the single QDs. This result is relevant for the creation and control of entangled states in optically active QDs. The modification of the electronic properties of QDMs, obtained by the combination of the two external fields, may enable controlled quantum operations.

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