This diploma thesis concerns itself with fabrication and characterization of Schottky solar cell on the graphene/silicon interface. Schottky solar cells were manufactured using a front collector electrode from gold, silver and carbon. On the graphene/silicon interface of the Schottky solar cell an interlayer of Al2O3 or SiO2. For the purpose of IV characterization of the manufactured Schottky solar cell a measuring apparatus was assembled.

Táto práca sa zaoberá technikou výroby samousporiadaných nanoštruktúr pre elektrické aplikácie. Prototypy boli pripravené anodickou oxidáciou v dvoch dĺžkach a tromi rôznymi tepelnými úpravami. Štrukturálna charakterizácia bola spravená pomocou techniky SEM, TEM a EDX a vyhodnotenie nielen z štrukturálneho, ale aj z materiálového hľadiska. Jedinečná koreňová štruktúra samousporiadaných nanotyčiniek bola vyhodnotená a porovnaná po troch rôznych tepelných úpravách: po anodizácii, po vákuovom žíhaní, a po žíhaní vo vzduchu. Všetky prototypy obsahujú nanotyčinky s amorfnou štruktúrou, ale našli sa však aj nanokryštály pod koreňovými štruktúrami. Elektrická charakterizácia prototypov ukázala: odporové spínacie správanie (RS), diódové charakteristiky a charakteristiku podobnú pre diódy s kapacitorom. Aktívny povrch pre spínací mechanizmus je v hornej časti nanoštruktúr na rozhraní nanotyčiniek a zlatej elektródy. Výška Schottkyho bariéry na rozhraní Ti / TiO2 bola vypočítaná dvoma spôsobmi a pre všetky tri zariadenia bola nižšia ako 1,11 eV.

This thesis focuses on the study of graphene application in electronics and technology of preparation. In addition to the basic properties of graphene, the theoretical part of the work also describes the methods of its preparation, transmission, characterization and possibilities of application in electronics. The experimental part is divided into three chapters. The first chapter deals with the production of graphene by deposition from the gaseous phase, its transmission and application in the field of solar cells. The Poly(methyl methacrylate) polymer was first used for transfer of graphene, which was later replaced by Rosin due to less contamination of graphene at the end of the transmission process. The second chapter deals with the preparation of quantum dots by exfoliation in the liquid phase from graphite and its application in voltammetry. Voltammetry was utilized in this work to detect hydrogen peroxide using a gold electrode modified by quantum dots from graphene and other dichalcogens (MoS2, MoSe2, WS2, WSe2). In the last chapter, the influence of the substrate and the deposition conditions of graphene is studied by means of a plasma-reinforced phase-out of gas to growth, while the prepared graphene was characterized by imaging and spectroscopic methods. The entire experimental growth of graphene was managed and evaluated using a planned experiment.

Study of electric field in radiation detectors by Pockels effect (Master Thesis) by Michael Hakl Abstract Cadmium Telluride (CdTe) is a convenient candidate for room tem- perature detection of X-ray and gama radiation due to 1.5 eV band- gap energy and high atomic mass. Since CdTe has the highest linear electro-optical coefficient among II-VI compounds, the detector rep- resents a Pockels cell. Transmittance of the crystal is modulated by the internal electric field. Processing of infrared camera photographs results in an electric field profile between biasing electrodes. The elec- tric field in semi-insulting CdTe is influenced with deep level traps causing charge polarization under the electrodes. Occupation of traps is dependent on metal-semiconductor interface. Relation of charge accumulation and band bending for gold and indium contacts was studied. Repolarization/depolarization induced by additional illumi- nation with sub/above bandgap excitation laser was observed and ex- ploited for determination of the deep level energy. Results obtained by the Pockels-effect method were supported with luminescence measure- ments. Correlation between the occurrence of deep levels and surface point defects was discovered. Keywords: Pockels electro-optical effect, Cadmium Telluride ra- diation detector, Electric field, Schottky...

Cílem diplomové práce bylo nastudovat a popsat mechanismy transportu náboje v tantalovém kondenzátoru. Práce obsahuje stručný teoretický úvod do problematiky kondenzátoru jako součástky a dále se zabývá jednotlivými mechanismy přenosu náboje jako je ohmická, Poole-Frenkel proudová, Schottkyho, tunelovací a emisní složka a také proudem prostorového náboje. V experimentální části byly měřeny ampér-voltové I/V, ampér-časové I/t a impedanční charakteristiky, jejichž data byla následně zpracována pomocí např. Mott-Schottkyho analýzy a byly vyhodnoceny elektrické parametry jako je aktivační energie, koncentrace dopantů, akumulační kapacita nebo potenciálová bariéra. Výsledky, vypočtené veličiny a naměřené hodnoty jsou diskutovány.

This work deals with the theoretical foundations of electron emission into vacuum, various types of emissions, focused on the cold-emission and Schottky emission and the principle of quantum tunneling. The next part deals with the technical implementation of electron sources with a detailed study of the methodology of laboratory production of cathodes by electrochemical etching and construction of electron microscopes, using field-emission sources. This work also contains methods for measuring, processing and evaluation of electrical characteristics of emission sources.

The thesis is focused on the electrodeposition of tantalum from ionic solution 1-butyl-1- methylpyrrolidinium bis(trifluoromethylsulfonyl) imide, ([BMP]Tf2N) at 200°C and description of related transfer and kinetic phenomena on the interface between the ionic solution and working electrode. Furthermore, the electrodeposition of tantalum layers in different ionic solutions containing tantalum salts and especially in ([BMP]Tf2N) is introduced. In the last part of the thesis, results of cyclic voltammetry, surface analysis SEM and elemental analysis EDX are discussed. MIS (metal-insulator-semiconductor) structure was determined comprising porous anodic alumina as the insulator and semiconductive TaxOy on the top of the insulator. The electric conductivity of the MIS structures was studied by using amper-volt IV and CV characteristics. The results of the cyclic voltametry, impedance spectroscopy and chronoamperometry are discussed.