Abstract Presently, IC is an important and absolutely necessary product that the thriving electronic industry is relying on in order to continue its development, therefore, it goes without saying that it is very important. In addition, the intellectual property right possessed by the IC itself is related to the development and progress of the industry technology. Therefore, in the early period, many countries and international organizations already enacted law to protect the intellectual property right of IC. In addition, the legislature protection on the intellectual property right of the integrated circuit was originated from the ¡uProtection of Semiconductor Chip Products¡vof United States. Thereafter, through the provision of the mutual benefit terms and its strong trading strength, United States influenced various countries like Japan, Taiwan and Mainland China to enact laws consecutively for the purpose of protection. Furthermore, between international countries, due to the importance of IC and the strength of United States, there were related treaties to protect the intellectual property right of IC. Amongst these the most important treaty was the ¡uAgreement on Trade-Related Aspects of Intellectual Property Rights (TRIPS)¡vestablished by the World Trade Organization (WTO). It replaced the ¡uthe Treaty on Intellectual Property in respect of Integrated Circuits (IPIC)¡v stipulated by the World Intellectual Property Organization (WIPO) and became the only international treaty with protection provision on the intellectual property right of IC. Up to this stage, the legal protection on the intellectual property right of IC has already become an international trend. Moreover, due to the long-time shut-off condition in Mainland China, only after it was re-opened again, its economy started to develop. With its own vast market and the advantage of low production cost, added with the full effort of encouragement on the development of IC industry by the Mainland China authority that stipulated many relative favorable policies, many international IC enterprises were attracted to invest in Mainland China. Of course, without exception, IC enterprise of Taiwan also went to set up factories in Mainland China. However, as Mainland China was at a shut-off condition for a long time, therefore related laws and regulations were not complete. Thereafter due to the practical pressure of international countries, Mainland China further established the ¡uIC Layout Drawing Design Protection Regulation¡v. However, as the development of the intellectual property right law was comparatively late, it resulted in failure in the performance of law execution. Therefore, it was extremely easy for the IC enterprises that went to invest in Mainland China to encounter infringement of intellectual property right and of course this also included enterprise of Taiwan, the trend of legal protection on the IC intellectual property right between United States and international countries is utilized to examine the protection structure of the intellectual property right of IC of Mainland China. The purpose is to understand when the international IC enterprise is developing in Mainland China, how it can utilize related legal protection structure to establish a set of its own intellectual property right protection system. Furthermore, suggestion on appropriate protection on the intellectual property right is presented to our IC enterprise in Mainland China so that the intellectual property right of our IC enterprise in Mainland China can obtain sufficient protection.

The research on electrochemical sensor applications in combination with application-defined electronic circuits is a very fast developing field of modern sensorics. Device designing of unique integrated systems with specific properties and parameters is now becoming the everyday practice for producers of devices based on the latest technology progress in microelectronics. In the process of realization of a new device type, the main objective consists in increasing the possibility of detecting very low concentrations of heavy metals in the given chemical solution, extending the signal-to-noise ratio, and measuring the potential of a sensor. The general aim of this Master’s thesis is to design the topology of a sensor based on the thick film technology, to materialize the sensor, and to make experimental measurement using the sensor prototype. The practical reason for basing the measurement on the application of this thick film sensor is to find out whether the operational integration of the sensor and the circuit has been achieved according to the original hypothesis. Importantly, it is also necessary to determine whether the reproducibility of measured results has been reached. The innovative aspect of the created device consists in the improvement of output characteristics given by the integration of ASIC (IMAM CHIP). The integration of ASIC on the surface of the sensor eliminates the huge parasitic influence that affects the accuracy of measurement.