Techn. Universiẗat, Diss., 2000--Dresden.

Este trabalho apresenta a fabricação e a caracterização elétrica de contatos Al/Ti/Ni(Pt)Si sobre junções rasas N+P com aproximadamente 0,2 ìm de profundidade, sendo que o monosiliceto de níquel foi formado a partir da estrutura Ni(30nm)/Pt(1,5nm)/Si. O comportamento elétrico dos diodos obtidos no melhor processo foi adequado, com as seguintes médias e desvios padrões: corrente reversa por unidade de área de 33,8nA/cm2 ±12,3 nA/cm2 e corrente reversa por unidade de perímetro de 654pA/cm ±229pA/cm para tensão reversa de -5V, a resistência reversa dos diodos quadrados de 268,9G? ±97,7G? e a resistência reversa dos diodos serpentinas de 35,5G? ±11,5G?, a tensão de início de condução resultou entre 0,55V e 0,56V, a resistência série em condução de 4,7? ±1,3?, fator de idealidade de 1,15 ±0,03, e corrente de saturação de 1,1x10-11A para diodos quadrados (300ìm x 300ìm). O menor valor de resistividade do filme de (Ni(Pt)Si) resultou 25ì?cm e a resistência de folha de 3,13 ?/? foram obtidas após a formação do mono-siliceto de níquel na temperatura de 600 ºC durante 120 segundos. As estruturas Kelvin apresentaram resistividade de contato de 15,0ì?.cm2 ±3,3ì?.cm2 e comportamento ôhmico estável para diversos níveis de corrente. Após uma extensa análise sobre modelagem de contato, foi elaborado um programa computacional desenvolvido em MATLAB, baseado em um método bem conhecido, isto é, uma malha de resistores tridimensional, que analisa os efeitos do fenômeno de concentração das linhas de corrente lateral no contato. Este programa foi aplicado em contatos com siliceto de níquel, onde foram observadas reduções de até 32% na resistividade real do contato. / This work presents the fabrication and electrical characterization of Al/Ti/Ni(Pt)Si contacts having the nickel monosilicide formed from Ni(30nm)/Pt(1.5nm)/Si structure on shallow N+P junctions with about 0.2 ìm of depth. The diodes? electrical behavior achieved at the best process was considered good, with the following average and standard deviations: area diode leakage current of 33.8nA/cm2 ±12.3nA/cm2 and periphery diode leakage current of 654pA/cm ±229pA/cm for reverse voltage of -5V, the square diode reverse resistance of 268.9G? ±97.7G? and serpentine diode reverse resistance of 35.5G? ±11.5G?, forwardbias voltage between 0.55V and 0.56V, forward series resistance of 4.7? ±1.3?, ideality factor of 1.15 ±0.03, and reverse saturation current of 1.1x10-11A for square diodes (300ìm x 300ìm). The lowest film resistivity value (Ni(Pt)Si) of 25ì?cm and sheet resistance of 3.13 ?/? were obtained for the formation of nickel monosilicide under temperature of 600ºC for 120 seconds. The cross-bridge Kelvin resistors presented contact resistivity of 15.0 ì?.cm2 ±3.3 ì?.cm2 and stable ohmic behavior for several electrical current levels. After extensive analysis about contact modeling, a computer program was elaborated in MATLAB, based on a well-known three-dimensional resistor network, which analyses the lateral current crowding effects on contact. This program was applied for contacts with nickel silicide, where a decrease up to 32% at the real contact resistivity was observed.

In the present work atom probe tomography (APT) was applied to analyze thin films used in semiconductor industry to investigate the capability of atom probe tomography as well as the dopant redistribution in thin silicide layer stacks. Different titanium silicide layer stacks are investigated and titanium diboride precipitates are identified by APT. Arsenic grain boundary segregation is verified by APT in cobalt silicide layer stacks. Furthermore APT measurements are compared to commonly used methods such as TEM and SIMS and found in good agreement. Each method exhibits its own advantages depending on the sample and the question. Atom probe tomography offers some unique features enabling three-dimensional analysis on the nanometer scale as shown on the mentioned thin film layer stacks.

No description available.

Die Bildung von CoSi$_2$-Schichten mittels TIME-Verfahren (TIME: Ti-Interlayer Mediated Epitaxy) wurde untersucht. Dabei wurde die Ti-Zwischenschicht durch eine Hf-Zwischenschicht ersetzt. Der Einfluss der Prozessparameter (Tempertemperatur, Temperzeit, Aufheizrate und Ausgangsschichtdicken) und des Metalls (Hf, Ti, Zr) der Zwischenschicht auf die Reaktion der metallischen Doppelschichten mit Si(100) wurde ermittelt. Zur Charakterisierung der Proben wurden RBS-, TEM-, XRD- und AES-Untersuchungen durchgefuehrt. Die Ausbildung eines Mehrschichtsystems nach der Temperung der Doppelschichten in Abhaengigkeit der Prozessparameter wird dargestellt. Es wird gezeigt, dass die Prozessparameter die Temperatur bestimmen, bei der die CoSi$_2$-Keimbildung stattfindet. Anhand dieser Untersuchungen wird nachgewiesen, dass sich mit Erhoehung der CoSi$_2$-Keimbildungstemperatur die epitaktische Qualitaet der gebildeten CoSi$_2$-Schicht verbessert. Die Erklaerung des Reaktionsablaufs der metallischen Doppelschichten mit Si(100) erfolgt anhand eines aufgestellten Reaktionsschemas. Zur Entfernung der Deckschicht wurden verschiedene Aetzverfahren angewandt und deren Wirkung verglichen. / The formation of a CoSi$_2$ layer by solid phase reaction of metallic bilayer with Si (TIME: Ti-Interlayer Mediated Epitaxy) was investigated. In this work the Ti was replaced by Hf. The influence of the annealing temperature, the annealing time, the heating rate and the thicknesses of the metallic layers on the reaction of the bilayer with Si was determined. The samples were characterised by Rutherford-backscattering (RBS), Transmission-Electron-Microscopy (TEM), X-ray-Diffraction and Auger-Electron-Spectroscopy (AES) studies. During the annealing of the samples a system of layers is formed. It was shown, that the annealing parameters and the thicknesses of the layer determine the temperature, on which the nucleation of CoSi$_2$ occurs. A decrease of this nucleation temperature leads to an improvement of the quality of the epitaxial CoSi$_2$ layer. A model of reaction is presented, which explains the reaction of the metallic bilayer with Si. The removal of the top layer by several etching procedures was investigated and the results were compared.

Thesis advisor: Dunwei Wang / In this work, we present our findings regarding the low-temperature, solid-state conversion of Cu₂S nanowires to Cu₂S/Cu₅FeS₄ rod-in-tube structures, Cu₂S/ZnS segmented nanowires, and a full conversion of Cu₂S nanowires to ZnS nanowires. These conversion reactions occur at temperatures as low as 105 degrees Celsius, a much lower temperature than those required for reported solid-state reactions. The key feature of the Cu₂S nanowires that enables such low conversion temperatures is the high ionic diffusivity of the Cu⁺ within a stable S sublattice. The second portion of this work will focus on the oxide-stabilization and utilization of TiSi₂ nanonets as a lithium-ion battery anode. This nanostructure, first synthesized in our lab, was previously demonstrated to possess a lithium storage capacity when cycled against a metallic Li electrode. However, with subsequent lithiation and delithiation cycles, the TiSi₂ nanonet structure was found to be unstable. By allowing a thin oxide layer to form on the surface of the nanonet, we were able to improve the capacity retention of the nanonets in a lithium-ion half-cell; 89.8% of the capacity of the oxide-coated TiSi₂ was retained after 300 cycles compared to 62.3% of the capacity of as-synthesized TiSi₂ nanonets after 300 cycles. The layered structure of C49 TiSi₂ exhibited in the nanonets allows for a specific capacity greater than 700 mAh g(-1), and the high electrical conductivity of the material in conjunction with the layered structure confer the ability to cycle the anode at rates of up to 6C, i.e., 10 minute charge and discharge cycles, while still maintaining more than 75% of the capacity at 1C, i.e., 1 hour charge and discharge cycles. / Thesis (MS) — Boston College, 2013. / Submitted to: Boston College. Graduate School of Arts and Sciences. / Discipline: Chemistry.

A segurança da operação de reatores nucleares depende dos materiais envolvidos em sua construção, pois são submetidos a variações de temperaturas em ambiente corrosivo e avarias causadas por partículas de alta energia. O combustível, que proporciona energia para o reator, possui vida útil muito menor, mas é submetido às mesmas condições. Dentre as ligas de urânio, o U3Si2 é bastante utilizado em reatores de pesquisa, dada a elevada densidade de urânio, boa condutividade térmica e resistência à amorfização induzida por radiação, ao inchamento e à propagação de trincas. Porém, no processo de fabricação da liga U-Si geralmente são formadas duas ou mais fases cristalinas, com comportamentos distintos sob irradiação. Por esse motivo, a especificação do pó de siliceto de urânio utilizado no reator IEA-R1 do IPEN, e do RMB (Reator Multipropósito Brasileiro) é de, pelo menos, 80% em massa de U3Si2. No entanto, as técnicas de caracterização atualmente utilizadas no controle de qualidade não permitem quantificar as fases cristalinas diretamente. Assim, esse trabalho propõe a utilização da difração de raios X (DRX), alinhada a refinamento pelo método de Rietveld para caracterização do pó de siliceto. Para tal, foram produzidas ligas de urânio contendo 33 a 67 mol% de silício, e técnicas de moagem e ajustes de refinamento foram testados. O método desenvolvido inclui cominuição em moinho vibratório e DRX com refinamento automatizado dos dados, permitindo a quantificação das fases cristalinas de maneira confiável, rápida e com mínima interferência do operador. Os resultados obtidos foram corroborados com os de técnicas como análise de imagem obtida por microscópio eletrônica de varredura (MEV), densidade e análises elementares de U e Si. / The safe operation of a nuclear power system relies on the materials of its construction. During the lifetime of a nuclear power system, the materials are subject to high temperature, a corrosive environment, and damage from high-energy particles released during fission. The fuel which powers the reactor has a much shorter life, but is also subject to the harsh environments. Considering the several uranium alloys, the U3Si2 is largely used in research reactors, due to is high uranium density, high thermal conductivity, resistance to radiation-induced amorphization, swelling and crack propagation. During its fabrication by melting, however, more than one crystalline phase is usually formed, and, the behavior of each, under irradiation is different and possibly dangerous. For this reason, the specification of the IEA-R1 and RMB (Brazilian Multipurpose Reactor) nuclear reactors describes a minimum of 80wt.% of U3Si2 for the uranium silicide powder. In this sense, a quality control system is vital for the safety and performance of the reactor. Since the currently characterization techniques used do not quantify the crystalline phases directly, the present work proposes the use of X-ray diffraction (XRD), together with Rietveld refinement of the results, for uranium silicide powder characterization. To accomplish this objective, uranium allows were produced containing 33 to 67 mol% of silicon. Milling methods and refinements strategies were tested to improve XRD results. The proposed method includes vibration grinding and XRD with automatic refinement of results, producing fast, reliable and more unbiased results. The quantification results obtained were supported by other techniques as scanning electron microscopy image analysis, density and elementary U and Si characterization.

Silicon (in the form of lithium silicides) has almost ten times the theoretical charge storage capacity of graphite, the anode material used in most commercially-available lithium-ion batteries. Replacing graphite with silicon therefore promises a substantial improvement over the state-of-the-art in electrochemical energy storage. However, it has proved difficult to realise this high theoretical capacity in a practical electrochemical cell and maintain it over repeated charge-discharge cycles. This dissertation presents experimental work probing the changes in local structure occurring during the electrochemical reactions of lithium with silicon, using neutron total scattering and nuclear magnetic resonance, together with novel processing methodologies for analysing the resulting data, in the hope of suggesting ways of improving the performance of silicon-based lithium-ion batteries. Neutron total scattering patterns were obtained from silicon-based anode materials extracted from cells at various states of charge. These samples were composed of a heterogeneous mixture of amorphous, crystalline and disordered crystalline materials. Reverse Monte Carlo is a technique for obtaining structural information from experimental data (particularly total scattering patterns) from amorphous and disordered crystalline materials. However, previously existing Reverse Monte Carlo software could only handle homogeneous materials. Therefore, the RMCprofile software package was extended to handle data from heterogeneous samples. The improved RMCprofile was applied to the aforementioned total scattering patterns, but the much stronger scattering from the other components (themselves not well-characterised) swamped that from the lithium silicide. Future work should attempt to reduce the scattering from the inactive components, particularly the hard-to-model incoherent scattering. NMR data were acquired in situ from silicon-nanowire-based lithium-ion batteries during repeated charge-discharge cycles, achieving much better electrochemical performance than had been seen in previous in situ experiments with silicon. Owing to the large quantities of data obtained, an automated, model-free dimensionality reduction technique was needed. The NMR data were processed using principal component analysis and a variant of non-negative matrix factorisation. With both of these methods, one of the components was found to be associated with high voltages vs. ${Li \vert{} Li^{+}}$ (i.e. a fully discharged anode). This region has seen very little interest by comparison with the low voltage (high levels of lithiation) region of the charge-discharge cycle, so this discovery suggests a new avenue for future research.

Electrical contacts to devices which pose low resistance continue to be of interest as the dimensions of devices decrease and nanotechnology demands better means of creating electrical access. Continued improvement in the performance of ohmic contacts requires techniques to better characterise and quantify the performance of such contacts. In order to study and estimate the resistance of such contacts or the resistance posed by the interface(s) in such contacts, accurate test structures and evaluation techniques need to be used. The resistance posed by an interface is quantified using its specific contact resistivity (SCR), which is denoted using ƒâc (units: £[cm2). Cross Kelvin resistor (CKR) test structures have been used for the measurement of low values of SCR. A simplified approach to this problem of SCR evaluation (developed previously at RMIT University) using the CKR test structures with varying contact sizes was used and during this work was shown to be accurate for the estimation of low values (less than10-8 £[cm2) of SCR. The silicides of interest in this study were titanium silicide (TiSi2) and nickel silicide (NiSi). These thin films are known for their low resistivity and low barrier heights to both n-type and p-type silicon. The research involved thin film formation and substantial materials characterisation of these thin films. The silicide thin films were formed by vacuum annealing metal thin films on silicon substrates. Silicide thin films formed from metal films deposited by DC magnetron sputtering and electron beam evaporation were compared. The composition, crystallographic orientation, and morphology of these thin films were studied using spectroscopy (AES, SIMS, RBS, in situ Raman spectroscopy), diffraction (Bragg-Brentano and glancing angle XRD, RHEED), and microscopy techniques (TEM, SEM, and AFM). TiSi2 and NiSi thin films were also found to be suitable for microsystems fabrication due to their ability to withstand wet etching of silicon using potassium hydroxide. The SCR of aluminium-titanium silicide ohmic contacts was evaluated to be as low as 6 x 10-10 ƒÇcm2, which is the lowest reported for any two- layer single-interface contact. Characterisation of ohmic contacts comprising of aluminium, nickel silicide, and doped silicon (with shallow implants) were also carried out using the same technique. SCR values as low as 5.0 x 10-9 ƒÇcm2 for contacts to antimony-doped silicon and 3.5 x 10-9 £[cm2 to boron-doped silicon were evaluated.

In recent years there has been a huge increase in the growth of communication systems such as mobile phones, wireless local area networks (WLAN), satellite navigation and various other forms of wireless data communication that have made analogue frequency control a key issue. The increase in frequency spectrum crowding and the increase of frequency into microwave region, along with the need for minimisation and capacity improvement, has shown the need for the development of high performance, miniature, on-chip filters operating in the low to medium GHz frequency range. This has hastened the need for alternatives to ceramic resonators due to their limits in device size and performance, which in turn, has led to development of the thin film electro-acoustics industry with surface acoustic wave (SAW) and bulk acoustic wave (BAW) filters now fabricated in their millions. Further, this new technology opens the way for integrating the traditionally incompatible integrated circuit (IC) and electro-acoustic (EA) technologies, bringing about substantial economic and performance benefits. In this thesis the compatibility of aluminium nitride (AlN) to IC fabrication is explored as a means for furthering integration issues. Various issues have been explored where either tailoring thin film bulk acoustic resonator (FBAR) design, such as development of an improved solidly mounted resonator (SMR) technology, and use of IC technology, such as chemical mechanical polishing (CMP) or nickel silicide (NiSi), has made improvements beneficial for resonator fabrication or enabled IC integration. The former has resulted in major improvements to Quality factor, power handling and encapsulation respectively. The later has provided alternative methods to reduce electro- or acoustomigration, reduced device size, for plate waves, supplied novel low acoustic impedance material for high power applications and alternative electrodes for use in high temperature sensors. Another method to enhance integration by using the piezoelectric material, AlN, in the IC side has also been explored. Here methods for analysing AlN film contamination and stoichiometry have been used for analysis of AlN as a high-k dielectric material. This has even brought benefits in knowledge of film composition for use as a passivation material with SiC substrates, investigated in high power high frequency applications. Lastly AlN has been used as a buried insulator material for new silicon-on-insulator substrates (SOI) for increased heat conduction. These new substrates have been analysed with further development for improved performance indicated. / wisenet